2SK3770-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Symbol VDS VDSX ID ID(puls] VGS IAR EAS Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation dV DS /dt dV/dt PD Operating and Storage Temperature range Isolation Voltage Tch Tstg VISO EAR Ratings 120 90 26 104 30 26 342.2 3.7 Unit V V A A V A mJ mJ Equivalent circuit schematic Remarks Drain(D) VGS=-30V Gate(G) Note *1 Note *2 Source(S) Note *1:Tch < = 150C,Repetitive and Non-repetitive Note *2:StartingTch=25C,IAS=11A,L=3.77mH, Note *3 VCC=48V,RG=50 20 5 37 2.16 +150 -55 to +150 2 EAS limited by maximum channel temperature kV/s VDS< =120V and Avalanche current. kV/s Note *4 See to the `Avalanche Energy' graph Tc=25C W Note *3:Repetitive rating:Pulse width limited by Ta=25C maximum channel temperature. C See to the `Transient Thermal impedance' C graph. kVrms t=60sec. f=60Hz < -ID, -di/dt = 50A/s,VCC= < BVDSS,Tch= <150C Note *4:IF = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=120V VGS=0V VDS=96V VGS=0V VGS=30V VDS=0V ID=13A VGS=10V Typ. 120 3.0 Tch=25C Tch=125C ID=13A VDS=25V VDS=75V VGS=0V f=1MH VCC=48V ID=13A VGS=10V 6 RGS=10 VCC=60V ID=26A VGS=10V IF=26A VGS=0V Tch=25C IF=26A VGS=0V -di/dt=100A/s Tch=25C 63 12 760 170 11 13 5 20 7.5 26 12 7 1.00 130 0.7 Max. 5.0 25 250 100 78 1140 255 17 20 7.5 30 11 39 18 11 1.50 Units V V A A nA m S pF ns nC V ns C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 3.378 58 Units C/W C/W 1 2SK3770-01MR FUJI POWER MOSFET Characteristics 50 Allowable Power Dissipation PD=f(Tc) 60 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 20V 10V 50 40 40 ID [A] PD [W] 30 8.0V 30 7.5V 20 20 7.0V 10 6.5V 10 6.0V VGS=5.5V 0 0 0 25 50 75 100 125 150 0 1 2 3 Tc [C] 100 4 5 6 VDS [V] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C 100 10 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] 0.24 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25 C VGS=5.5V 6.0V 6.5V 7.0V 7.5V 0.18 8.0V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=13A,VGS=10V 0.16 0.20 0.14 0.12 RDS(on) [ ] RDS(on) [ ] 100 ID [A] 0.16 0.12 max. 0.08 0.06 10V 20V 0.08 0.10 typ. 0.04 0.02 0.04 0.00 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3770-01MR 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=26A,Tch=25 C 6.5 6.0 12 5.5 10 4.5 4.0 VGS [V] VGS(th) [V] Vcc=60V max. 5.0 3.5 min. 3.0 8 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 5 10 15 Tch [C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 20 25 30 35 40 Qg [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C 100 3 Ciss IF [A] C [pF] 10 Coss 10 2 1 10 Crss 1 10 0 10 1 10 0.1 0.00 2 0.25 0.50 VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 400 2 1.25 1.50 IAS=11A 300 250 EAV [mJ] t [ns] td(off) td(on) 10 1.00 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=26A 350 tf 10 0.75 VSD [V] 1 IAS=16A 200 IAS=26A 150 100 tr 50 10 0 0 10 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 2SK3770-01MR 10 2 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 -1 10 -2 10 -3 10 10 -6 -5 10 10 -4 10 -3 -2 10 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ http://store.iiic.cc/ 4