SMD Schottky Barrier Rectifiers CDBB120-G Thru CDBB1100-G Reverse Voltage: 20 - 100 Volts Forward Current: 1.0 Amp RoHS Device Features soa SMB/DO-214AA Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. ye t ili ificati a 0.083(2.11 0.155(3.94 flammability classification 94V-0 OOrMa | fesseen Built-in strain relief Low forward voltage drop 0.185(4.70) 0.012(0.31) 0:006(0.15 Mechanical Data x] \ |] ames! 0.098(2.44) 0.083(2.13) Case: JEDEC DO-214AA molded plastic wand x 0.008(0.20) Terminals: solderable per MIL-STD-750, 0.030(0.76) 0.220(6.59) 0.203(0.10) method 2026 0.200(5.08) Polarity: corr band denotes cathode Dimensions in inches and (millimeter) Approx. Weight:0.093 gram Maximum Ratings and Electrical Characteristics Parameter Symbol] cpsB120-G | cbDBB140-G | CDBB160-G | CDBB180-G | CDBB1100-G| Unit Max. Repetitive Peak Reverse Voltage| VRRM 20 40 60 80 100 Vv Max. DC Blocking Voltage Vpc 20 40 60 80 100 Max. RMS Voltage VRMS 14 28 42 56 70 Vv Peak Surge Forward Current 8.3ms single half sine-wave IFsm 30 A superimposed on rate load ( JEDEC method ) Max. Average Forward Current lo 1.0 A Max. Instantaneous Forward Current at1.0A VF 0.50 0.70 0.85 V Max. DC Reverse Current at Rated DC 05 Blocking Voltage Ta=25C IR . . 10 mA Ta=100C Max. Thermal Resistance (Note 1) R@uA 75 3 C/w R@JL 17 Max. Operating Junction Temperature | Tj 125 c Storage Temperature TSTG -65 to +150 c Note 1: Thermal resistance from junction to ambient and junction to to lead P.C.B. Mounted on 0.2 x 0.2 inch? copper pad areas Rev.A Cee QW-BB004 Page 1 SMD Schottky Barrier Rectifiers COMCHIPF SMOG Diodes Specialist Rating and Characteristic Curves (CDBB120-G Thru CDBB1100-G) Fig. 1 - Reverse Characteristics Fig.2 - Forward Characteristics 100 < ~ E zg 10 5 CDBB180-G-1100-G 3 o 9 1 x 3 r 0.1 Tj=25C nO Pulse width 300uS Tj=25C 4% duty cycle 0.01 0 2 40 60 80 100 120 140 160 180 200 002 04 06 08 10 12 14 16 1.8 2.0 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig. 3- Junction Capacitance Fig. 4 - Current Derating Curve 1000 f =1MHz and applied 4VDC reverse voltage 12 Q 1.0 oO Yo \& Naive 0.8 o Q 100 . > \e %, 0.8 Q Q \ 04 \ 0.2 10 0 \ 0.1 1.0 10 100 20 40 60 80 100 120 140 160 Junction Capacitance (pF) Average Forward Current (A) Reverse Voltage (V) Ambient Temperature (C) Fig. 5- Non repetitive forward surge current 450 i ror T Tt