OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B 05/2011
Page 3 of 4
Plastic Infrared Emitting Diode
OP165, OP166 Series
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
EE (APT) Apertured Radiant Incidence
OP165A, OP166A
1.95
-
- mW/cm2 IF = 20 mA(2)
PO Radiant Power Output
OP165W, OP166W
0.50
-
- mW IF = 20 mA
VF Forward Voltage - - 1.60 V IF = 20 mA
IR Reverse Current - - 100 µA VR= 2 V
λP Wavelength at Peak Emission - 935 - nm IF = 10 mA
B Spectral Bandwidth between Half Power
Points
-
50
- nm IF = 10 mA
∆λP /∆T
Spectral Shift with Temperature
OP165, OP166 (A, B, C, D)
OP165W, OP166W
-
-
-
±0.30
-
-
nm/°C IF = Constant
θHP
Emission Angle at Half Power Points
OP165, OP166 (A, B, C, D)
OP165W, OP166W
-
-
18
90
-
-
Degree IF = 20 mA
tr Output Rise Time - 1000 - ns
tf Output Fall Time - 500 - ns
IF(PK)=100 mA, PW=10 µs, D.C.=10.0%
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage and Operating Temperature Range -40o C to +100o C
Reverse Voltage 2.0 V
Continuous Forward Current 50 mA
Peak Forward Current (1 µs pulse width, 300 pps) 3.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C
Power Dissipation 100 mW(1)
Notes:
1. Derate linearly 1.33 mW/°C above 25°C
2. EE(APT) is a measurement of the average apertured rediant incidence
ipon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to
and centered on the mechanical axis of the lens, and 0.590” (14.99
mm) from the measurement surface. EE(APT) is not necessarily
uniform within the measured areas.