MITSUBISHI LASER DIODES
ML9XX40 SERIES
Notice : Some parametric limits are subject to change 2.5Gbps InGaAsP DFB LASER DIODE
Feb. 2005
MITSUBISHI
ELECTRIC
TYPE
NAME
DESCRIPTION
ML9XX40 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.
λ/4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx40 can
operate in the wide temperature range from 0oC to 85 oC without any
temperature control. They are well suited for light source in long
distance digital transmission application of coarse WDM.
APPLICATION
· 2.5Gbps long-haul transmission
· Coarse WDM application
FEATURES
· λ/4 shifted grating structure
· Wide temperature range operation (0oC to 85oC)
· High side-mode-suppression-ratio (typical 45dB)
· High resonance frequency (typical 11GHz)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
Po Output power CW 6 mW
If Forward current (Laser diode) --- 150 mA
VRL Reverse voltage (Laser diode) --- 2 V
IFD Forward current (Photo diode) --- 2 mA
VRD Reverse voltage (Photo diode) --- 20 V
Tc Case temperature --- 0 to +85 ºC
Tstg Storage temperature --- -40 to +100 ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
Symbol Parameter Test conditions Min. Typ. Max. Unit
CW --- 10 15
<*1> --- 35 40
Ith Threshold current
CW
Tc=85ºC <*2> --- 45 50
mA
CW, Po=5mW --- 35 45
<*1> --- 70 80
Iop Operation current
CW, Po=5mW
Tc=85ºC <*2> --- 90 100
mA
Vop Operating voltage CW, Po=5mW --- 1.1 1.5 V
CW, Po=5mW 0.17 0.22 ---
η Slope efficiency CW, Po=5mW <*3> 0.15 0.20 --- mW/mA
λp Peak wavelength CW, Po=5mW <*4>,<*5> nm
Side mode suppression ratio CW, Po=5mW, Tc=0 to 85ºC 35 45 --- dB
SMSR Side mode suppression ratio(RF) 2.48832Gbps,Ib=Ith, Ipp=40mA --- 45 ---
θ // Beam divergence angle (parallel) <*6> CW, Po=5mW --- 25 --- deg.
θ ┴ (perpendicular) <*6> CW, Po=5mW --- 30 --- deg.
fr Resonance frequency 2.48832Gbps,Ib=Ith, Ipp=40mA --- 11 --- GHz
tr,tf Rise and Fall time <*7> 2.48832Gbps,Ib=Ith, Ipp=40mA
20%-80% --- 80 120 ps
Im Monitoring output current (PD) CW, Po=5mW,VRD=1V,RL=10Ω0.1 --- 1.0 mA
Id Dark current (PD) VRD=5V --- --- 0.1 µA
Ct Capacitance (PD) VRD=5V --- 10 20 pF
<*1> Applied to ML9xx40-04~09 and -12~17.
<*2> Applied to ML9xx40-10~11 and -18~19.
<*3> Applied to ML925J40F and ML920L40S.
<*6> Beam divergence is not applied to ML925J40F and ML920L40S.
<*7> Except influence of the 18mm lead.
ML925B40F / ML920J40S
ML925J40F / ML920L40S
MITSUBISHI LASER DIODES
ML9XX40 SERIES
Notice : Some parametric limits are subject to change 2.5Gbps InGaAsP DFB LASER DIODE
Feb. 2005
MITSUBISHI
ELECTRIC
<*4> Peak Wavelength
Limits
Type Symbol Test Condition
Min. Typ. Max. Unit
ML925B40F-01 / ML920J40S-01
ML925J40F-01 / ML920L40S-01
CW, Po=5mW
Tc= 0 to 85ºC 1530 1550 1570
ML925B40F-04 / ML920J40S-04
ML925J40F-04 / ML920L40S-04 1467 1470 1473
ML925B40F-05 / ML920J40S-05
ML925J40F-05 / ML920L40S-05 1487 1490 1493
ML925B40F-06 / ML920J40S-06
ML925J40F-06 / ML920L40S-06 1507 1510 1513
ML925B40F-07 / ML920J40S-07
ML925J40F-07 / ML920L40S-07 1527 1530 1533
ML925B40F-08 / ML920J40S-08
ML925J40F-08 / ML920L40S-08 1547 1550 1553
ML925B40F-09 / ML920J40S-09
ML925J40F-09 / ML920L40S-09 1567 1570 1573
ML925B40F-10 / ML920J40S-10
ML925J40F-10 / ML920L40S-10 1587 1590 1593
ML925B40F-11 / ML920J40S-11
ML925J40F-11 / ML920L40S-11
λp CW, Po=5mW
Tc= 25ºC
1607 1610 1613
nm
<*5> Peak Wavelength
Limits
Type Symbol Test Condition
Min. Typ. Max. Unit
ML925B40F-12 / ML920J40S-12
ML925J40F-12 / ML920L40S-12 1468 1470 1472
ML925B40F-13 / ML920J40S-13
ML925J40F-13 / ML920L40S-13 1488 1490 1492
ML925B40F-14 / ML920J40S-14
ML925J40F-14 / ML920L40S-14 1508 1510 1512
ML925B40F-15 / ML920J40S-15
ML925J40F-15 / ML920L40S-15 1528 1530 1532
ML925B40F-16 / ML920J40S-16
ML925J40F-16 / ML920L40S-16 1548 1550 1552
ML925B40F-17 / ML920J40S-17
ML925J40F-17 / ML920L40S-17 1568 1570 1572
ML925B40F-18 / ML920J40S-18
ML925J40F-18 / ML920L40S-18 1588 1590 1592
ML925B40F-19 / ML920J40S-19
ML925J40F-19 / ML920L40S-19
λp CW, Po=5mW
Tc= 25ºC
1608 1610 1612
nm
MITSUBISHI LASER DIODES
ML9XX40 SERIES
Notice : Some parametric limits are subject to change 2.5Gbps InGaAsP DFB LASER DIODE
Feb. 2005
MITSUBISHI
ELECTRIC
OUTLINE DRAWINGS
(1)
φ3.75±0.1
φ5.6 +0
-0.03
1.27 ±0.03
18 ±1
3.97 ±0.15
1.2
±0.1
4-φ0.45±0.05
(2)
Ｘ
1±0.1
2-90°
Ｙ
φ2.0±0.25
(P.C.D.)
φ4.3
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
Ｚ
Top View
(7.51)
ML925J11F
Case
(1) (2)
(3)
(4)
PD
LD
Pin Connection
( Top view )
Case
(1) (2)
(3)
(4)
PD
LD
ML920L11S
ML925B40F
ML920J40S
Dimensions : m
m
(1)
φ1.0Min.
φ2.0Min.
φ3.55±0.1
φ5.6
+0
-0.03
1.27
±0.03
0.25
±0.03
18
±1
2.1
±0.15
1.2
±0.1
4-φ0.45
±0.05
(2)
Ｘ
1
±0.1
2-90°
Ｙ
φ2.0
±0.25
(P.C.D.)
φ4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
(Glass)
ML925J40F
ML920L40S
Dimensions : m
m
ML925B 11F
Case
(1) (2)
(3)
(4)
PD
LD
Pin Connection
( Top view )
Case
(1) (2)
(3)
(4)
PD
LD
ML920J11S
ML925B40F
ML920J40S
Pin Connection
(Top view)
ML925J40F
ML920L40S
