MLX92241LUA-BAA-108-BU - Melexis

P/N: PM1752 REV. 1.5, June 02, 2016

MX25V1006E

DATASHEET

P/N: PM1752 REV. 1.5, June 02, 2016

MX25V1006E

Contents

FEATURES .................................................................................................................................................................. 4

GENERAL .......................................................................................................................................................... 4

PERFORMANCE ............................................................................................................................................... 4

SOFTWARE FEATURES ................................................................................................................................... 4

HARDWARE FEATURES ................................................................................................................................... 5

GENERAL DESCRIPTION .........................................................................................................................................5

PIN CONFIGURATIONS .............................................................................................................................................. 6

8-LAND USON (2x3mm) ................................................................................................................................... 6

8-PIN TSSOP (173mil) ...................................................................................................................................... 6

8-PIN SOP (150mil) ........................................................................................................................................... 6

PIN DESCRIPTION ...................................................................................................................................................... 6

BLOCK DIAGRAM ....................................................................................................................................................... 7

DATA PROTECTION .................................................................................................................................................... 8

Table 1. Protected Area Sizes ............................................................................................................................ 8

HOLD FEATURE .......................................................................................................................................................... 9

Figure 1. Hold Condition Operation ................................................................................................................... 9

Table 2. COMMAND DEFINITION ................................................................................................................... 10

MEMORY ORGANIZATION ....................................................................................................................................... 11

Table 3. Memory Organization ........................................................................................................................ 11

DEVICE OPERATION ................................................................................................................................................ 12

Figure 2. Serial Modes Supported.................................................................................................................... 12

COMMAND DESCRIPTION ....................................................................................................................................... 13

(1) Write Enable (WREN) ................................................................................................................................. 13

(2) Write Disable (WRDI) .................................................................................................................................. 13

(3) Read Identication (RDID) .......................................................................................................................... 13

(4) Read Status Register (RDSR) .................................................................................................................... 14

Status Register ................................................................................................................................................. 14

(5) Write Status Register (WRSR) .................................................................................................................... 15

Table 4. Protection Modes ................................................................................................................................ 15

(6) Read Data Bytes (READ) ........................................................................................................................... 16

(7) Read Data Bytes at Higher Speed (FAST_READ) ..................................................................................... 16

(8) Dual Output Mode (DREAD) ....................................................................................................................... 16

(9) Sector Erase (SE) ....................................................................................................................................... 16

(10) Block Erase (BE)....................................................................................................................................... 17

(11) Chip Erase (CE) ........................................................................................................................................ 17

(12) Page Program (PP)................................................................................................................................... 17

(13) Deep Power-down (DP) ............................................................................................................................ 18

(14) Release from Deep Power-down (RDP), Read Electronic Signature (RES) ........................................... 18

(15) Read Electronic Manufacturer ID & Device ID (REMS) ............................................................................ 19

Table of ID Denitions ...................................................................................................................................... 19

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MX25V1006E

POWER-ON STATE ...................................................................................................................................................20

ELECTRICAL SPECIFICATIONS .............................................................................................................................. 21

ABSOLUTE MAXIMUM RATINGS ................................................................................................................... 21

CAPACITANCE TA = 25°C, f = 1.0 MHz ........................................................................................................... 21

Figure 5. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL ............................................................ 22

Figure 6. OUTPUT LOADING ......................................................................................................................... 22

Table 5. DC CHARACTERISTICS ................................................................................................................... 23

Table 6. AC CHARACTERISTICS .................................................................................................................. 24

Table 7. Power-Up Timing ................................................................................................................................ 25

INITIAL DELIVERY STATE............................................................................................................................... 25

Timing Analysis ........................................................................................................................................................26

Figure 7. Serial Input Timing ............................................................................................................................ 26

Figure 8. Output Timing .................................................................................................................................... 26

Figure 9. Hold Timing ....................................................................................................................................... 27

Figure 10. WP# Disable Setup and Hold Timing during WRSR when SRWD=1 ............................................. 27

Figure 11. Write Enable (WREN) Sequence (Command 06) ........................................................................... 28

Figure 12. Write Disable (WRDI) Sequence (Command 04) ............................................................................ 28

Figure 13. Read Identication (RDID) Sequence (Command 9F) .................................................................... 28

Figure 14. Read Status Register (RDSR) Sequence (Command 05) .............................................................. 29

Figure 15. Write Status Register (WRSR) Sequence (Command 01) ............................................................. 29

Figure 16. Read Data Bytes (READ) Sequence (Command 03) .................................................................... 29

Figure 17. Read at Higher Speed (FAST_READ) Sequence (Command 0B) ................................................ 30

Figure 18. Dual Output Read Mode Sequence (Command 3B) ....................................................................... 30

Figure 19. Page Program (PP) Sequence (Command 02).............................................................................. 31

Figure 20. Sector Erase (SE) Sequence (Command 20) ................................................................................ 32

Figure 21. Block Erase (BE) Sequence (Command 52 or D8) ........................................................................ 32

Figure 22. Chip Erase (CE) Sequence (Command 60 or C7) ......................................................................... 33

Figure 23. Deep Power-down (DP) Sequence (Command B9)....................................................................... 33

Figure 24. Read Electronic Signature (RES) Sequence (Command AB) ........................................................ 33

Figure 25. Release from Deep Power-down (RDP) Sequence (Command AB) ............................................. 34

Figure 26. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90)............................ 34

Figure 27. Power-up Timing ............................................................................................................................. 35

RECOMMENDED OPERATING CONDITIONS ......................................................................................................... 36

Figure 28. AC Timing at Device Power-Up ....................................................................................................... 36

Figure 29. Power-Down Sequence .................................................................................................................. 37

ERASE AND PROGRAMMING PERFORMANCE .................................................................................................... 38

DATA RETENTION .................................................................................................................................................... 38

LATCH-UP CHARACTERISTICS .............................................................................................................................. 38

ORDERING INFORMATION ...................................................................................................................................... 39

PART NAME DESCRIPTION ..................................................................................................................................... 40

PACKAGE INFORMATION ........................................................................................................................................41

REVISION HISTORY ................................................................................................................................................. 44

P/N: PM1752 REV. 1.5, June 02, 2016

MX25V1006E

GENERAL

• Supports Serial Peripheral Interface -- Mode 0 and Mode 3

• 1,048,576 x 1 bit structure or 524,288 x 2 bits (Dual Output mode) Structure

• 32 Equal Sectors with 4K byte each

- Any Sector can be erased individually

• 2 Equal Blocks with 64K byte each

- Any Block can be erased individually

• Single Power Supply Operation

- 2.35 to 3.6 volt for read, erase, and program operations

• Latch-up protected to 100mA from -1V to Vcc +1V

PERFORMANCE

• High Performance

- Fast access time: 75MHz serial clock

- Serial clock of Dual Output mode: 70MHz

- Fast program time: 0.6ms(typ.) and 1ms(max.)/page (256-byte per page)

- Byte program time: 9us

- Fast erase time: 40ms(typ.)/sector (4K-byte per sector) ; 0.8s(typ.) and 2s(max.)/chip

• Low Power Consumption

- Low active read current: 12mA(max.) at 75MHz and 4mA(max.) at 33MHz

- Low active programming current: 13mA (typ.)

- Low active sector erase current: 9mA (typ.)

- Low standby current: 13uA (typ.)

- Deep power-down mode: 0.8uA (typ.)

• Minimum 100,000 erase/program cycles

• 20 years data retention

SOFTWARE FEATURES

• Input Data Format

- 1-byte Command code

• Block Lock protection

- The BP0-BP1 status bit denes the size of the area to be software protected against Program and Erase in-

structions.

• Auto Erase and Auto Program Algorithm

- Automatically erases and veries data at selected sector

- Automatically programs and veries data at selected page by an internal algorithm that automatically times the

program pulse widths (Any page to be programed should have page in the erased state rst)

• Status Register Feature

• Electronic Identication

- JEDEC 2-byte Device ID

- RES command, 1-byte Device ID

1M-BIT [x 1/x 2] CMOS SERIAL FLASH

FEATURES

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MX25V1006E

HARDWARE FEATURES

• SCLK Input

- Serial clock input

• SI/SIO0

- Serial Data Input or Serial Data Output for Dual output mode

• SO/SIO1

- Serial Data Output or Serial Data Output for Dual output mode

• WP# pin

- Hardware write protection

• HOLD# pin

- pause the chip without diselecting the chip

• PACKAGE

- 8-USON (2x3mm)

- 8-pin TSSOP (173mil)

- 8-pin SOP (150mil)

All devices are RoHS compliant and Halogen-free

GENERAL DESCRIPTION

MX25V1006E is a CMOS 1,048,576 bit serial Flash memory, which is congured as 131,072 x 8 internally.

MX25V1006E features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus.

The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access

to the device is enabled by CS# input.

MX25V1006E provides sequential read operation on whole chip.

After program/erase command is issued, auto program/erase algorithms which program/erase and verify the speci-

ed page or sector/block locations will be executed. Program command is executed on page (256 bytes) basis, and

erase command is executes on chip or sector (4K-bytes) or block (64K-bytes).

To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read

command can be issued to detect completion status of a program or erase operation via WIP bit.

When the device is not in operation and CS# is high, it is put in standby mode.

The MX25V1006E utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after

100,000 program and erase cycles.

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MX25V1006E

PIN CONFIGURATIONS

SYMBOL DESCRIPTION

CS# Chip Select

SI/SIO0 Serial Data Input (for 1 x I/O)/ Serial Data

Input & Output (for Dual output mode)

SO/SIO1 Serial Data Output (for 1 x I/O)/ Serial Data

Input & Output (for Dual output mode)

SCLK Clock Input

HOLD# Hold, to pause the device without

deselecting the device

WP# Write Protection

VCC + 3.3V Power Supply

GND Ground

PIN DESCRIPTION

8-LAND USON (2x3mm)

CS#

SO/SIO1

WP#

GND

VCC

HOLD#

SCLK

SI/SIO0

8-PIN TSSOP (173mil)

CS#

SO/SIO1

WP#

GND

VCC

HOLD#

SCLK

SI/SIO0

8-PIN SOP (150mil)

CS#

SO/SIO1

WP#

GND

VCC

HOLD#

SCLK

SI/SIO0

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MX25V1006E

BLOCK DIAGRAM

Address

Generator

Memory Array

Page Buffer

Y-Decoder

X-Decoder

Data

SRAM

Buffer

SI/SIO0

SCLK Clock Generator

State

Machine

Mode

Logic

Sense

Amplifier

Generator

Output

Buffer

SO/SIO1

CS#,

WP#,

HOLD#

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MX25V1006E

DATA PROTECTION

During power transition, there may be some false system level signals which result in inadvertent erasure or

programming. The device is designed to protect itself from these accidental write cycles.

The state machine will be reset as standby mode automatically during power up. In addition, the control register

architecture of the device constrains that the memory contents can only be changed after specic command

sequences have completed successfully.

In the following, there are several features to protect the system from the accidental write cycles during VCC power-

up and power-down or from system noise.

• Valid command length checking: The command length will be checked whether it is at byte base and com-

pleted on byte boundary.

• Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before

other command to change data. The WEL bit will return to reset stage under following situation:

- Power-up

- Write Disable (WRDI) command completion

- Write Status Register (WRSR) command completion

- Page Program (PP) command completion

- Sector Erase (SE) command completion

- Block Erase (BE) command completion

- Chip Erase (CE) command completion

• Software Protection Mode (SPM): by using BP0-BP1 bits to set the part of Flash protected from data change.

• Hardware Protection Mode (HPM): by using WP# going low to protect the BP0-BP1 bits and SRWD bit from

data change.

• Deep Power Down Mode: By entering deep power down mode, the ash device also is under protected from

writing all commands except Release from Deep Power-down mode command (RDP) and Read Electronic Sig-

nature command (RES).

Table 1. Protected Area Sizes

Status bit Protect level 1Mb

BP1 BP0

0 0 0 (none) None

0 1 1 (1 block) Block 1

1 0 2 (2 blocks) All

1 1 3 (All) All

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MX25V1006E

Valid Data Valid Data Valid DataDon’t care

High_Z High_Z

Don’t care

Bit 7 Bit 6 Bit 5

Bit 5

Bit 7

Bit 7 Bit 6

Bit 6

HOLD#

CS#

SCLK

SI/SIO0

SO/SIO1

(internal)

SO/SIO1

(External)

≈ ≈ ≈ ≈ ≈ ≈ ≈≈

HOLD FEATURE

HOLD# pin signal goes low to hold any serial communications with the device. The HOLD feature will not stop the

operation of write status register, programming, or erasing in progress.

The operation of HOLD requires Chip Select(CS#) keeping low and starts on falling edge of HOLD# pin signal

while Serial Clock (SCLK) signal is being low (if Serial Clock signal is not being low, HOLD operation will not start

until Serial Clock signal being low). The HOLD condition ends on the rising edge of HOLD# pin signal while Se-

rial Clock(SCLK) signal is being low(if Serial Clock signal is not being low, HOLD operation will not end until Serial

Clock being low), see Figure 1.

Figure 1. Hold Condition Operation

Valid Data Valid Data Valid DataDon’t care

High_Z High_Z

Don’t care

Bit 7 Bit 6 Bit 5 Bit 3Bit 4

Bit 7 Bit 6 Bit 4

Bit 5 Bit 3

HOLD#

CS#

SCLK

SI/SIO0

SO/SIO1

(internal)

SO/SIO1

(External)

≈ ≈ ≈ ≈ ≈ ≈ ≈≈

During the HOLD operation, the Serial Data Output (SO) is high impedance when Hold# pin goes low and will keep

high impedance until Hold# pin goes high and SCLK goes low. The Serial Data Input (SI) is don't care if both Serial

Clock (SCLK) and Hold# pin goes low and will keep the state until SCLK goes low and Hold# pin goes high. If Chip

Select (CS#) drives high during HOLD operation, it will reset the internal logic of the device. To re-start communica-

tion with chip, the HOLD# must be at high and CS# must be at low.

P/N: PM1752 REV. 1.5, June 02, 2016

MX25V1006E

Table 2. COMMAND DEFINITION

(1) ADD=00H will output the manufacturer's ID rst and ADD=01H will output device ID rst.

(2) It is not recommended to adopt any other code which is not in the command denition table above.

COMMAND

(byte)

WREN

(Write Enable)

WRDI

(Write Disable)

RDID

(Read

Identication)

RDSR

(Read Status

WRSR

(Write Status

READ

(Read Data)

1st 06 (hex) 04 (hex) 9F (hex) 05 (hex) 01 (hex) 03 (hex)

2nd AD1

3rd AD2

4th AD3

5th

Action

sets the (WEL)

write enable

latch bit

resets the (WEL)

write enable

latch bit

outputs

manufacturer

ID and 2-byte

device ID

to read out the

status register

to write new

values to the

status register

n bytes read out

until CS# goes

high

COMMAND

(byte)

Fast Read

(Fast Read

Data)

DREAD

(Dual Output

mode)

(Sector Erase)

(Block Erase)

(Chip Erase)

(Page

Program)

1st 0B (hex) 3B (hex) 20 (hex) 52 or D8 (hex) 60 or C7 (hex) 02 (hex)

2nd AD1 AD1 AD1 AD1 AD1

3rd AD2 AD2 AD2 AD2 AD2

4th AD3 AD3 AD3 AD3 AD3

5th x

Action

n bytes read out

until CS# goes

high

n bytes read out

until CS# goes

high

to erase the

selected sector

to erase the

selected block

to erase the

whole chip

to program the

selected page

COMMAND

(byte)

(Deep Power-

down)

RDP

(Release from

Deep Power-

down)

RES

(Read

Electronic ID)

REMS

(Read

Electronic

Manufacturer &

Device ID)

1st B9 (hex) AB (hex) AB (hex) 90 (hex)

2nd x x

3rd x x

4th x ADD(1)

5th

Action

enters deep

power down

mode

release from

deep power

down mode

to read out

1-byte Device

Output the

manufacturer ID

and device ID

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MX25V1006E

Table 3. Memory Organization

Block Sector Address Range

31 01F000h 01FFFFh

:::

16 010000h 010FFFh

15 00F000h 00FFFFh

:::

3 003000h 003FFFh

2 002000h 002FFFh

1 001000h 001FFFh

0 000000h 000FFFh

MEMORY ORGANIZATION

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MX25V1006E

DEVICE OPERATION

1. Before a command is issued, status register should be checked to ensure the device is ready for the intended

operation.

2. When incorrect command is inputted to this LSI, this LSI becomes standby mode and keeps the standby mode

until next CS# falling edge. In standby mode, SO pin of this LSI should be High-Z. The CS# falling time needs to

follow tCHCL spec. (Please refer to Table 6. AC CHARACTERISTICS)

3. When correct command is inputted to this LSI, this LSI becomes active mode and keeps the active mode until

next CS# rising edge. The CS# rising time needs to follow tCLCH spec. (Please refer to Table 6. AC CHARACTER-

ISTICS)

4. Input data is latched on the rising edge of Serial Clock(SCLK) and data shifts out on the falling edge of SCLK.

The difference of Serial mode 0 and mode 3 is shown as Figure 2.

5. For the following instructions: RDID, RDSR, READ, FAST_READ, DREAD, RES and REMS the shifted-in in-

struction sequence is followed by a data-out sequence. After any bit of data being shifted out, the CS# can be

high. For the following instructions: WREN, WRDI, WRSR, SE, BE, CE, PP, RDP and DP the CS# must go high

exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.

6. During the progress of Write Status Register, Program, Erase operation, to access the memory array is neglect-

ed and not affect the current operation of Write Status Register, Program, and Erase.

Figure 2. Serial Modes Supported

SCLK

MSB

CPHA shift in shift out

CPOL

0(Serial mode 0)

(Serial mode 3) 1

SCLK

MSB

Note: CPOL indicates clock polarity of Serial master:

-CPOL=1 for SCLK high while idle,

-CPOL=0 for SCLK low while not transmitting.

CPHA indicates clock phase.

The combination of CPOL bit and CPHA bit decides which Serial mode is supported.

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MX25V1006E

COMMAND DESCRIPTION

(1) Write Enable (WREN)

The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP, SE,

BE, CE, and WRSR, which are intended to change the device content, should be set every time after the WREN in-

struction setting the WEL bit.

The sequence of issuing WREN instruction is: CS# goes low→ sending WREN instruction code→ CS# goes high. (see

Figure 11)

(2) Write Disable (WRDI)

The Write Disable (WRDI) instruction is for resetting Write Enable Latch (WEL) bit.

The sequence of issuing WRDI instruction is: CS# goes low→ sending WRDI instruction code→ CS# goes high. (see

Figure 12)

The WEL bit is reset by following situations:

- Power-up

- Write Disable (WRDI) instruction completion

- Write Status Register (WRSR) instruction completion

- Page Program (PP) instruction completion

- Sector Erase (SE) instruction completion

- Block Erase (BE) instruction completion

- Chip Erase (CE) instruction completion

(3) Read Identication (RDID)

The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix

Manufacturer ID and Device ID are listed as Table of ID Denitions.

The sequence of issuing RDID instruction is: CS# goes low→sending RDID instruction code→24-bits ID data out on

SO→to end RDID operation can use CS# to high at any time during data out. (see Figure. 13)

While Program/Erase operation is in progress, it will not decode the RDID instruction, so there's no effect on the cy-

cle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby stage.

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MX25V1006E

(4) Read Status Register (RDSR)

The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even in

program/erase/write status register condition) and continuously. It is recommended to check the Write in Progress (WIP)

bit before sending a new instruction when a program, erase, or write status register operation is in progress.

The sequence of issuing RDSR instruction is: CS# goes low→sending RDSR instruction code→Status Register

data out on SO (see Figure. 14)

The denition of the status register bits is as below:

WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write

status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status

WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable

latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/

erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the de-

vice will not accept program/erase/write status register instruction.

BP1, BP0 bits. The Block Protect (BP1, BP0) bits, non-volatile bits, indicate the protected area (as dened in table

1) of the device to against the program/erase instruction without hardware protection mode being set. To write the

Block Protect (BP1, BP0) bits requires the Write Status Register (WRSR) instruction to be executed. Those bits

dene the protected area of the memory to against Page Program (PP), Sector Erase (SE), Block Erase (BE) and

Chip Erase(CE) instructions (only if all Block Protect bits set to 0, the CE instruction can be executed)

SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, is operated together with Write Protec-

tion (WP#) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1

and WP# pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is

no longer accepted for execution and the SRWD bit and Block Protect bits (BP1, BP0) are read only.

Notes: 1. See the table "Protected Area Sizes".

bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0

SRWD (status

protect)

000

BP1

(level of

protected

block)

BP0

(level of

protected

block)

WEL

(write enable

latch)

WIP

(write in

progress bit)

1=status

disable

(Note 1) (Note 1)

1=write

enable

0=not write

enable

1=write

operation

0=not in write

operation

Status Register

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MX25V1006E

(5) Write Status Register (WRSR)

The WRSR instruction is for changing the values of Status Register Bits. Before sending WRSR instruction, the

Write Enable (WREN) instruction must be decoded and executed to set the Write Enable Latch (WEL) bit in ad-

vance. The WRSR instruction can change the value of Block Protect (BP1, BP0) bits to dene the protected area

of memory (as shown in table 1). The WRSR also can set or reset the Status Register Write Disable (SRWD) bit in

accordance with Write Protection (WP#) pin signal. The WRSR instruction cannot be executed once the Hardware

Protected Mode (HPM) is entered.

The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register

data on SI→ CS# goes high. (see Figure 15)

The WRSR instruction has no effect on b6, b5, b4, b1, b0 of the status register.

The CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.

The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes high. The Write

in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress. The WIP sets 1

during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write Enable Latch (WEL)

bit is reset.

Table 4. Protection Modes

Note: 1. As dened by the values in the Block Protect (BP1, BP0) bits of the Status Register, as shown in Table 1.

As the table above showing, the summary of the Software Protected Mode (SPM) and Hardware Protected Mode (HPM).

Software Protected Mode (SPM):

- When SRWD bit=0, no matter WP# is low or high, the WREN instruction may set the WEL bit and can

change the values of SRWD, BP1, BP0. The protected area, which is dened by BP1, BP0, is at software

protected mode (SPM).

- When SRWD bit=1 and WP# is high, the WREN instruction may set the WEL bit can change the values of

SRWD, BP1, BP0. The protected area, which is dened by BP1, BP0, is at software protected mode (SPM)

Note: If SRWD bit=1 but WP# is low, it is impossible to write the Status Register even if the WEL bit has previ-

ously been set. It is rejected to write the Status Register and not be executed.

Hardware Protected Mode (HPM):

- When SRWD bit=1, and then WP# is low (or WP# is low before SRWD bit=1), it enters the hardware pro-

tected mode (HPM). The data of the protected area is protected by software protected mode by BP1, BP0

and hardware protected mode by the WP# to against data modication.

Note: to exit the hardware protected mode, it requires WP# driving high once the hardware protected mode is

entered. If the WP# pin is permanently connected to high, the hardware protected mode can never be en-

tered; only can use software protected mode via BP1, BP0.

Mode Status register condition WP# and SRWD bit status Memory

Software protection

mode (SPM)

Status register can be written

in (WEL bit is set to "1") and

the SRWD, BP0-BP1

bits can be changed.

WP#=1 and SRWD bit=0, or

WP#=0 and SRWD bit=0, or

WP#=1 and SRWD=1

The protected area

cannot be programmed

or erased.

Hardware protection

mode (HPM)

The SRWD, BP0-BP1 of

status register bits cannot be

changed.

WP#=0, SRWD bit=1

The protected area

cannot be programmed

or erased.

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MX25V1006E

(6) Read Data Bytes (READ)

The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on

the falling edge of SCLK at a maximum frequency fR. The rst address byte can be at any location. The address

is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can

be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been

reached.

The sequence of issuing READ instruction is: CS# goes low→ sending READ instruction code→ 3-byte address on

SI→ data out on SO→ to end READ operation can use CS# to high at any time during data out. (see Figure. 16)

(7) Read Data Bytes at Higher Speed (FAST_READ)

The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and

data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The rst address byte can be at

any location. The address is automatically increased to the next higher address after each byte data is shifted out,

so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when

the highest address has been reached.

The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ instruction code→

3-byte address on SI→ 1-dummy byte address on SI→data out on SO→ to end FAST_READ operation can use

CS# to high at any time during data out. (see Figure. 17)

While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any im-

pact on the Program/Erase/Write Status Register current cycle.

(8) Dual Output Mode (DREAD)

The DREAD instruction enable double throughput of Serial Flash in read mode. The address is latched on rising

edge of SCLK, and data of every two bits(interleave on 1I/2O pins) shift out on the falling edge of SCLK at a maxi-

mum frequency fT. The rst address byte can be at any location. The address is automatically increased to the next

higher address after each byte data is shifted out, so the whole memory can be read out at a single DREAD instruc-

tion. The address counter rolls over to 0 when the highest address has been reached. Once writing DREAD instruc-

tion, the following data out will perform as 2-bit instead of previous 1-bit.

The sequence is shown as Figure 18.

While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any impact

on the Program/Erase/Write Status Register current cycle.

The DREAD only performs read operation. Program/Erase /Read ID/Read status....operations do not support

DREAD throughputs.

(9) Sector Erase (SE)

The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". A Write Enable (WREN) in-

struction must execute to set the Write Enable Latch (WEL) bit before sending the Sector Erase (SE). Any address

of the sector (see table 3) is a valid address for Sector Erase (SE) instruction. The CS# must go high exactly at the

byte boundary (the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not

executed.

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MX25V1006E

Address bits [Am-A12] (Am is the most signicant address) select the sector address.

The sequence of issuing SE instruction is: CS# goes low → sending SE instruction code→ 3-byte address on SI →

CS# goes high. (see Figure 20)

The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in

Progress (WIP) bit still can be checked out during the Sector Erase cycle is in progress. The WIP sets 1 during the

tSE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the

page is protected by BP1, BP0 bits, the Sector Erase (SE) instruction will not be executed on the page.

(10) Block Erase (BE)

The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". A Write Enable (WREN) in-

struction must execute to set the Write Enable Latch (WEL) bit before sending the Block Erase (BE). Any address

of the block (see table 3) is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the

byte boundary (the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not

executed.

The sequence of issuing BE instruction is: CS# goes low → sending BE instruction code→ 3-byte address on SI →

CS# goes high. (see Figure 21)

The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in

Progress (WIP) bit still can be check out during the Sector Erase cycle is in progress. The WIP sets 1 during the

tBE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the

page is protected by BP1, BP0 bits, the Block Erase (BE) instruction will not be executed on the page.

(11) Chip Erase (CE)

The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN) instruc-

tion must execute to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). Any address of the

sector (see table 3) is a valid address for Chip Erase (CE) instruction. The CS# must go high exactly at the byte

boundary( the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not ex-

ecuted.

The sequence of issuing CE instruction is: CS# goes low→ sending CE instruction code→ CS# goes high. (see

Figure 22)

The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in

Progress (WIP) bit still can be check out during the Chip Erase cycle is in progress. The WIP sets 1 during the tCE

timing, and sets 0 when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the chip is

protected by BP1, BP0 bits, the Chip Erase (CE) instruction will not be executed. It will be only executed when BP1,

BP0 all set to "0".

(12) Page Program (PP)

The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction

must execute to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). The last address

byte (the 8 least signicant address bits, A7-A0) should be set to 0 for 256 bytes page program. If A7-A0 are not

all zero, transmitted data that exceed page length are programmed from the starting address (24-bit address that

last 8 bit are all 0) of currently selected page. The CS# must keep during the whole Page Program cycle. The CS#

must go high exactly at the byte boundary (the latest eighth of address byte been latched-in); otherwise, the instruc-

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MX25V1006E

tion will be rejected and not executed. If the data bytes sent to the device exceeds 256, the last 256 data byte is

programmed at the request page and previous data will be disregarded. If the data bytes sent to the device has not

exceeded 256, the data will be programmed at the request address of the page. There will be no effort on the other

data bytes of the same page.

The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte address on SI→ at

least 1-byte on data on SI→ CS# goes high. (see Figure 19)

The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in

Progress (WIP) bit still can be check out during the Page Program cycle is in progress. The WIP sets 1 during the

tPP timing, and sets 0 when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the

page is protected by BP1, BP0 bits, the Page Program (PP) instruction will not be executed.

(13) Deep Power-down (DP)

The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (to enter-

ing the Deep Power-down mode), the standby current is reduced from ISB1 to ISB2). The Deep Power-down mode

requires the Deep Power-down (DP) instruction to enter, during the Deep Power-down mode, the device is not ac-

tive and all Write/Program/Erase instruction are ignored. When CS# goes high, it's only in standby mode not deep

power-down mode. It's different from Standby mode.

The sequence of issuing DP instruction is: CS# goes low→ sending DP instruction code→ CS# goes high. (see Fig-

ure 23)

Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP)

and Read Electronic Signature (RES) instruction. (RES instruction to allow the ID been read out). When Power-

down, the deep power-down mode automatically stops, and when power-up, the device automatically is in standby

mode. For RDP instruction the CS# must go high exactly at the byte boundary (the latest eighth bit of instruction

code been latched-in); otherwise, the instruction will not executed. As soon as Chip Select (CS#) goes high, a delay

of tDP is required before entering the Deep Power-down mode and reducing the current to ISB2.

(14) Release from Deep Power-down (RDP), Read Electronic Signature (RES)

The Release from Deep Power-down (RDP) instruction is terminated by driving Chip Select (CS#) High. When Chip

Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the

Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in

the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip

Select (CS#) must remain High for at least tRES2(max), as specied in Table 6. Once in the Stand-by Power mode,

the device waits to be selected, so that it can receive, decode and execute instructions.

RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as Table of ID

Denitions. This is not the same as RDID instruction. It is not recommended to use for new design. For new deisng,

please use RDID instruction. Even in Deep power-down mode, the RDP and RES are also allowed to be executed,

only except the device is in progress of program/erase/write cycle; there's no effect on the current program/erase/

write cycle in progress.

The sequence is shown as Figure 24 and Figure 25.

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MX25V1006E

Table of ID Denitions

RDID Command manufacturer ID memory type memory density

C2 20 11

RES Command electronic ID

REMS Command manufacturer ID device ID

C2 10

The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeat-

edly if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously

in Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in

Deep Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least

tRES2(max). Once in the standby mode, the device waits to be selected, so it can be received, be decoded, and be

executed instruction.

The RDP instruction is for releasing from Deep Power Down Mode.

(15) Read Electronic Manufacturer ID & Device ID (REMS)

The REMS instruction is an alternative to the Release from Power-down/Device ID instruction that provides both the

JEDEC assigned manufacturer ID and the specic device ID.

The REMS instruction is very similar to the Release from Power-down/Device ID instruction. The instruction is initi-

ated by driving the CS# pin low and shift the instruction code "90h" followed by two dummy bytes and one bytes ad-

dress (A7-A0). After which, the Manufacturer ID for Macronix (C2h) and the Device ID are shifted out on the falling

edge of SCLK with most signicant bit (MSB) rst as shown in Figure 26. The Device ID values are listed in Table of

ID Denitions. If the one-byte address is initially set to 01h, then the device ID will be read rst and then followed by

the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other.

The instruction is completed by driving CS# high.

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MX25V1006E

POWER-ON STATE

The device is at the states as below when power-up:

- Standby mode (please note it is not deep power-down mode)

- Write Enable Latch (WEL) bit is reset

The device must not be selected during power-up and power-down stage unless the VCC achieves below correct

level (Please refer to the gure of "power-up timing"):

- VCC minimum at power-up stage and then after a delay of tVSL

- GND at power-down

Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.

An internal Power-On Reset (POR) circuit may protect the device from data corruption and inadvertent data change

during power up state.

For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not

guaranteed. The read, write, erase, and program command should be sent after the time delay: tVSL after VCC

reached VCC minimum level. Please refer to the gure of "power-up timing".

The device can accept read command after VCC reached VCC minimum and a time delay of tVSL.

Note:

- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommend-

ed.(generally around 0.1uF)

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MX25V1006E

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL SPECIFICATIONS

CAPACITANCE TA = 25°C, f = 1.0 MHz

SYMBOL PARAMETER MIN. TYP. MAX. UNIT CONDITIONS

CIN Input Capacitance 6 pF VIN = 0V

COUT Output Capacitance 8 pF VOUT = 0V

NOTICE:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage

to the device. This is stress rating only and functional operational sections of this specication is not implied.

Exposure to absolute maximum rating conditions for extended period may affect reliability.

2. Specications contained within the following tables are subject to change.

3. During voltage transitions, all pins may overshoot to VCC+1.0V to VCC or -0.5V to GND for period up to 20ns.

RATING VALUE

Ambient Operating Temperature -40°C to 85°C

Storage Temperature -65°C to 150°C

Applied Input Voltage -0.5V to VCC+0.5V

Applied Output Voltage -0.5V to VCC+0.5V

VCC to Ground Potential -0.5V to VCC+0.5V

Figure 3. Maximum Negative Overshoot Waveform Figure 4. Maximum Positive Overshoot Waveform

-0.5V

20ns 20ns

20ns

Vcc + 1.0V

Vcc

20ns 20ns

20ns

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MX25V1006E

DEVICE UNDER

TEST

CL 25K ohm

25K ohm

+2.5V

CL=30pF or 15pF Including jig capacitance

Figure 5. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL

Measurement

Level

Input timing reference level Output timing reference level

0.8VCC 0.7VCC

0.3VCC

0.5VCC

0.2VCC

Note: Input pulse rise and fall time are <5ns

Figure 6. OUTPUT LOADING

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MX25V1006E

Symbol Parameter Notes Min. Typ. Max. Units Test Conditions

ILI Input Load Current 1 ± 0.02 ± 2 uA VCC = VCC Max

VIN = VCC or GND

ILO Output Leakage Current 1 ± 0.02 ± 2 uA VCC = VCC Max

VOUT = VCC or GND

ISB1 VCC Standby Current 1 13 25 uA VIN = VCC or GND

CS#=VCC

ISB2 Deep Power-down

Current 0.8 10 uA VIN = VCC or GND

CS#=VCC

ICC1 VCC Read 1

3.5 12 mA

f=75MHz

fT=70MHz (Dual Output)

SCLK=0.1VCC/0.9VCC,

SO=Open

10 mA

f=66MHz

SCLK=0.1VCC/0.9VCC,

SO=Open

1.5 4 mA

f=33MHz

SCLK=0.1VCC/0.9VCC,

SO=Open

ICC2 VCC Program Current

(PP) 1 13 20 mA Program in Progress

CS#=VCC

ICC3

VCC Write Status

Current

2.1 15 mA

Program status register in

progress

CS#=VCC

ICC4 VCC Sector Erase

Current (SE) 1 9 15 mA Erase in Progress

CS#=VCC

ICC5 VCC Chip Erase

Current (CE) 1 15 20 mA Erase in Progress

CS#=VCC

VIL Input Low Voltage -0.5 0.3VCC V

VIH Input High Voltage 0.7VCC VCC+0.4 V

VOL Output Low Voltage 0.4 V IOL = 1.6mA

VOH Output High Voltage VCC-0.2 V IOH = -100uA

VWI Low VCC Write Inhibit

Voltage 3 1.5 2.3 V

Table 5. DC CHARACTERISTICS

Notes :

1. Typical values at VCC = 3.3V, T = 25°C. These currents are valid for all product versions (package and speeds).

2. Typical value is calculated by simulation.

3. Not 100% tested.

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MX25V1006E

Table 6. AC CHARACTERISTICS

Symbol Alt. Parameter Min. Typ. Max. Unit

fSCLK fC

Clock Frequency for the following instructions:

FAST_READ, PP, SE, BE, CE, DP, RES, RDP,

WREN, WRDI, RDID, RDSR, WRSR

DC 75 MHz

fRSCLK fR Clock Frequency for READ instructions DC 33 MHz

fTSCLK fT Clock Frequency for DREAD instructions DC 70 MHz

tCH(1) tCLH Clock High Time @33MHz 13 ns

@75MHz 6 ns

tCL(1) tCLL Clock Low Time @33MHz 13 ns

@75MHz 6 ns

tCLCH(2) Clock Rise Time (3) (peak to peak) 0.1 V/ns

tCHCL(2) Clock Fall Time (3) (peak to peak) 0.1 V/ns

tSLCH tCSS CS# Active Setup Time (relative to SCLK) 7 ns

tCHSL CS# Not Active Hold Time (relative to SCLK) 7 ns

tDVCH tDSU Data In Setup Time 2 ns

tCHDX tDH Data In Hold Time 5 ns

tCHSH CS# Active Hold Time (relative to SCLK) 7 ns

tSHCH CS# Not Active Setup Time (relative to SCLK) 7 ns

tSHSL tCSH CS# Deselect Time Read 15 ns

Write 40 ns

tSHQZ(2) tDIS Output Disable Time 6 ns

tCLQV tV Clock Low to Output Valid 30pF 8 ns

15pF 6 ns

tCLQX tHO Output Hold Time 0 ns

tHLCH HOLD# Active Setup Time (relative to SCLK) 5 ns

tCHHH HOLD# Active Hold Time (relative to SCLK) 5 ns

tHHCH HOLD# Not Active Setup Time (relative to SCLK) 5 ns

tCHHL HOLD# Not Active Hold Time (relative to SCLK) 5 ns

tHHQX(2) tLZ HOLD# to Output Low-Z 6 ns

tHLQZ(2) tHZ HOLD# to Output High-Z 6 ns

tWHSL(4) Write Protect Setup Time 20 ns

tSHWL(4) Write Protect Hold Time 100 ns

tDP(2) CS# High to Deep Power-down Mode 10 us

tRES1(2) CS# High to Standby Mode without Electronic Signature

Read 8.8 us

tRES2(2) CS# High to Standby Mode with Electronic Signature

Read 8.8 us

tW Write Status Register Cycle Time 5 40 ms

tBP Byte-Program 9 50 us

tPP Page Program Cycle Time 0.6 1 ms

tSE Sector Erase Cycle Time 40 200 ms

tBE Block Erase Cycle Time 0.4 1 s

tCE Chip Erase Cycle Time 0.8 2 s

Notes:

1. tCH + tCL must be greater than or equal to 1/f (fC or fR).

2. Value guaranteed by characterization, not 100% tested in production.

3. Expressed as a slew-rate.

4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.

5. Test condition is shown as Figure 5.

6. The CS# rising time needs to follow tCLCH spec and CS# falling time needs to follow tCHCL spec.

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MX25V1006E

Symbol Parameter Min. Max. Unit

tVSL(1) VCC(min) to CS# low 200 us

INITIAL DELIVERY STATE

The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status

Note: 1. The parameter is characterized only.

Table 7. Power-Up Timing

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MX25V1006E

Figure 7. Serial Input Timing

Figure 8. Output Timing

LSB

ADDR.LSB IN

tSHQZ

tCH

tCL

tCLQX

tCLQV

SCLK

CS#

SCLK

CS#

MSB

tDVCH

High-Z

LSB

tSLCH

tCHDX

tCHCL

tCLCH

tSHCH

tSHSL

tCHSHtCHSL

Timing Analysis

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MX25V1006E

Figure 9. Hold Timing

* SI is "don't care" during HOLD operation.

Figure 10. WP# Disable Setup and Hold Timing during WRSR when SRWD=1

tCHHL

tHLCH

tHHCH

tCHHH

tHHQXtHLQZ

SCLK

CS#

HOLD#

High-Z

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

tWHSL tSHWL

SCLK

CS#

WP#

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MX25V1006E

Figure 11. Write Enable (WREN) Sequence (Command 06)

Figure 12. Write Disable (WRDI) Sequence (Command 04)

Figure 13. Read Identication (RDID) Sequence (Command 9F)

21 34567

High-Z

Command

SCLK

CS#

21 34567

High-Z

Command

SCLK

CS#

21 345678910 11 12 13 14 15

Command

Manufacturer Identification

High-Z

MSB

15 14 13 3210

Device Identification

MSB

7 6 5 3 2 1 0

16 17 18 28 29 30 31

SCLK

CS#

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MX25V1006E

Figure 14. Read Status Register (RDSR) Sequence (Command 05)

Figure 15. Write Status Register (WRSR) Sequence (Command 01)

Figure 16. Read Data Bytes (READ) Sequence (Command 03)

21 345678910 11 12 13 14 15

command

76543210

Status Register Out

High-Z

MSB

76543210

Status Register Out

MSB

SCLK

CS#

21 3456789 10 11 12 13 14 15

Status

765432 0

MSB

SCLK

CS#

High-Z

command

SCLK

CS#

21 345678910 28 29 30 31 32 33 34 35

22 21 3210

36 37 38

76543 1 7

Data Out 1

24-Bit Address

MSB

Data Out 2

High-Z

command

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MX25V1006E

Figure 17. Read at Higher Speed (FAST_READ) Sequence (Command 0B)

21 345678910 28 29 30 31

22 21 3210

High-Z

24 BIT ADDRESS

32 33 34 36 37 38 39 40 41 42 43 44 45 46

765432 0

DATA OUT 1

Dummy Byte

MSB

76543210

DATA OUT 2

MSB MSB

765432 0

SCLK

CS#

SCLK

CS#

Command

Figure 18. Dual Output Read Mode Sequence (Command 3B)

High Impedance

21 3456780

SCLK

SI/SO0

SO/SO1

CS#

9 10 11 30 31 32

3B(hex) dummy

address

bit23, bit22, bit21...bit0

data

bit6, bit4, bit2...bit0, bit6, bit4....

data

bit7, bit5, bit3...bit1, bit7, bit5....

39 40 41 42 43

8 Bit Instruction 24 BIT Address 8 dummy

cycle Data Output

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MX25V1006E

Figure 19. Page Program (PP) Sequence (Command 02)

4241 43 44 45 46 47 48 49 50 52 53 54 5540

21 3456789 10 28 29 30 31 32 33 34 35

22 21 3210

36 37 38

24-Bit Address

765432 0

Data Byte 1

765432 0

Data Byte 2

765432 0

Data Byte 3 Data Byte 256

2079

2078

2077

2076

2075

2074

2073

765432 0

2072

MSB MSB

MSB MSB MSB

SCLK

CS#

SCLK

CS#

Command

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MX25V1006E

Figure 20. Sector Erase (SE) Sequence (Command 20)

Note: SE command is 20(hex).

Figure 21. Block Erase (BE) Sequence (Command 52 or D8)

Note: BE command is 52 or D8(hex).

24 Bit Address

21 3456789 29 30 310

23 22 2 1 0

MSB

SCLK

CS#

Command

24 Bit Address

21 3456789 29 30 310

23 22 2 0

MSB

SCLK

CS#

52 or D8

Command

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MX25V1006E

Figure 22. Chip Erase (CE) Sequence (Command 60 or C7)

Figure 23. Deep Power-down (DP) Sequence (Command B9)

Figure 24. Read Electronic Signature (RES) Sequence (Command AB)

Note: CE command is 60(hex) or C7(hex).

21 345670

60 or C7

SCLK

CS#

Command

21 345670tDP

Deep Power-down Mode

Stand-by Mode

SCLK

CS#

Command

21 345678910 28 29 30 31 32 33 34 35

22 21 3210

36 37 38

765432 0

High-Z Electronic Signature Out

3 Dummy Bytes

MSB

Stand-by Mode

Deep Power-down Mode

MSB

tRES2

SCLK

CS#

Command

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MX25V1006E

Figure 25. Release from Deep Power-down (RDP) Sequence (Command AB)

Figure 26. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90)

Notes:

(1) ADD=00H will output the manufacturer's ID rst and ADD=01H will output device ID rst

21 345670tRES1

Stand-by Mode

Deep Power-down Mode

High-Z

SCLK

CS#

Command

15 14 13 3 2 1 0

21 3456789 10

2 Dummy Bytes

32 33 34 36 37 38 39 40 41 42 43 44 45 46

765432 0

Manufacturer ID

ADD (1)

MSB

76543210

Device ID

MSB MSB

765432 0

3531302928

SCLK

CS#

SCLK

CS#

SO X

High-Z

Command

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MX25V1006E

Figure 27. Power-up Timing

VCC

VCC(min)

Chip Selection is Not Allowed

tVSL

time

Device is fully

accessible

VCC(max)

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MX25V1006E

RECOMMENDED OPERATING CONDITIONS

At Device Power-Up

AC timing illustrated in Figure 28 and Figure 29 are for the supply voltages and the control signals at device power-

up and power-down. If the timing in the gures is ignored, the device will not operate correctly.

During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be

selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL.

Notes :

1. Sampled, not 100% tested.

2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the gure, please refer to

"AC CHARACTERISTICS" table.

Symbol Parameter Notes Min. Max. Unit

tVR VCC Rise Time 1 500000 us/V

Figure 28. AC Timing at Device Power-Up

SCLK

CS#

VCC

MSB IN

tDVCH

High Impedance

LSB IN

tSLCH

tCHDX

tCHCL

tCLCH

tSHCH

tSHSL

tCHSHtCHSL

tVR

VCC(min)

GND

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MX25V1006E

Figure 29. Power-Down Sequence

CS#

SCLK

VCC

During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation.

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MX25V1006E

ERASE AND PROGRAMMING PERFORMANCE

Parameter Min. Typ. (1) Max. (2) Unit

Write Status Register Cycle Time 5 40 ms

Sector erase Time 40 200 ms

Block erase Time 0.4 1 s

Chip Erase Time 0.8 2 s

Byte Program Time (via page program command) 9 50 us

Page Program Time 0.6 1 ms

Erase/Program Cycle 100,000 cycles

Notes:

1. Typical program and erase time assumes the following conditions: 25°C, 2.5V, and checker board pattern.

2. Under worst conditions of 85°C and 2.35V.

3. System-level overhead is the time required to execute the rst-bus-cycle sequence for the programming com-

mand.

4. Erase/Program cycles comply with JEDEC: JESD47 & JESD22-A117 standard.

Min. Max.

Input Voltage with respect to GND on all power pins, SI, CS# -1.0V 2 VCCmax

Input Voltage with respect to GND on SO -1.0V VCC + 1.0V

Current -100mA +100mA

Includes all pins except VCC. Test conditions: VCC = 2.5V, one pin at a time.

LATCH-UP CHARACTERISTICS

DATA RETENTION

Parameter Condition Min. Max. Unit

Data retention 55˚C 20 years

P/N: PM1752 REV. 1.5, June 02, 2016

MX25V1006E

Please contact Macronix regional sales for the latest product selection and available form factors.

Part No. Clock

(MHz) Temperature Package Remark

MX25V1006EZUI-13G 75 -40° to 85°C 8-USON (2x3mm)

MX25V1006EOI-13G 75 -40° to 85°C 8-TSSOP (173mil)

MX25V1006EMI-13G 75 -40° to 85°C 8-SOP (150mil)

ORDERING INFORMATION

P/N: PM1752 REV. 1.5, June 02, 2016

MX25V1006E

PART NAME DESCRIPTION

MX 25 V 13 ZU I G

OPTION:

G: RoHS compliant and Halogen-free

SPEED:

13: 75MHz

TEMPERATURE RANGE:

I: Industrial (-40°C to 85°C)

PACKAGE:

ZU: 2x3mm 8-USON

O: 173mil 8-TSSOP

M: 150mil 8-SOP

DENSITY & MODE:

1006E: 1Mb

TYPE:

V: 2.5V

DEVICE:

25: Serial Flash

1006E

P/N: PM1752 REV. 1.5, June 02, 2016

MX25V1006E

PACKAGE INFORMATION

P/N: PM1752 REV. 1.5, June 02, 2016

MX25V1006E

P/N: PM1752 REV. 1.5, June 02, 2016

MX25V1006E

P/N: PM1752 REV. 1.5, June 02, 2016

MX25V1006E

REVISION HISTORY

Revision No. Description Page Date

1.0 1. Removed "Advanced Information" P4 OCT/28/2011

1.1 1. Added 150mil 8-SOP package solution P5,6,39, MAY/16/2013

P40,43

1.2 1. Removed "Advanced Information" status of MX25V1006EMI-13G P39 JUN/17/2013

1.3 1. Updated parameters for DC/AC Characteristics P4,23,24 NOV/12/2013

2. Updated Erase and Programming Performance P4,38

1.4 1. Updated parameters for DC Characteristics P4,23 MAR/26/2015

2. Modied HOLD feature descriptions. P9

1.5 1. Updated tVR values P36 JUN/02/2016

2. Added a statement for product ordering information P39

Except for customized products which has been expressly identied in the applicable agreement, Macronix's

products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or

household applications only, and not for use in any applications which may, directly or indirectly, cause death,

personal injury, or severe property damages. In the event Macronix products are used in contradicted to their

target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualied for its

actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or

distributors shall be released from any and all liability arisen therefrom.

tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit,

NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC,

Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au dio, Rich Book, Rich TV, and FitCAM. The names

and brands of third party referred thereto (if any) are for identication purposes only.

For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com

MX25V1006E

MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specications without notice.