Type IPP039N04L G
IPB039N04L G
OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDVGS=10 V, TC=25 °C 80 A
VGS=10 V, TC=100 °C 80
VGS=4.5 V, TC=25 °C 80
VGS=4.5 V,
TC=100 °C 73
Pulsed drain current2) ID,pulse TC=25 °C 400
Avalanche current, single pulse3) IAS TC=25 °C 80
Avalanche energy, single pulse EAS ID=80 A, RGS=25 Ω60 mJ
Gate source voltage VGS ±20 V
Value
1) J-STD20 and JESD22
VDS 40 V
RDS(on),max 3.9 mΩ
ID80 A
Product Summary
Type IPB039N04L G IPP039N04L G
Package PG-TO263-3 PG-TO220-3
Marking 039N04L 039N04L
Rev. 1.2 page 1 2009-12-17
IPP039N04L G
IPB039N04L G
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation Ptot TC=25 °C 94 W
Operating and storage temperature Tj, Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.6 K/W
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm² cooling area4) --40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 40 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=45 µA 1.2 - 2
Zero gate voltage drain current IDSS VDS=40 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=40 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance5) RDS(on) VGS=4.5 V, ID=80 A - 4.2 5.2 mΩ
VGS=10 V, ID=80 A - 3.1 3.9
Gate resistance RG- 1.6 - Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=80 A 75 151 - S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
3) See figure 13 for more detailed information
Value
Values
2) See figure 3 for more detailed information
Rev. 1.2 page 2 2009-12-17
IPP039N04L G
IPB039N04L G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 4600 6100 pF
Output capacitance Coss - 820 1100
Reverse transfer capacitance Crss -39-
Turn-on delay time td(on) -10-ns
Rise time tr- 5.4 -
Turn-off delay time td(off) -38-
Fall time tf- 6.0 -
Gate Char
g
e Characteristics6)
Gate to source charge Qgs -14-nC
Gate charge at threshold Qg(th) - 7.4 -
Gate to drain charge Qgd - 6.1 -
Switching charge Qsw -13-
Gate charge total Qg-5978
Gate plateau voltage Vplateau - 3.0 - V
Gate charge total QgVDD=20 V, ID=30 A,
VGS=0 to 4.5 V -2838nC
Gate charge total, sync. FET Qg(sync) VDS=0.1 V,
VGS=0 to 10 V -55-
Output charge Qoss VDD=20 V, VGS=0 V -42-
Reverse Diode
Diode continuous forward current IS- - 78 A
Diode pulse current IS,pulse - - 400
Diode forward voltage VSD VGS=0 V, IF=80 A,
Tj=25 °C - 0.92 1.2 V
Reverse recovery charge Qrr VR=20 V, IF=IS,
diF/dt=400 A/µs -50-nC
6) See figure 16 for gate charge parameter definition
TC=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=20 V, VGS=10 V,
ID=30 A, RG=1.6 Ω
VDD=20 V, ID=30 A,
VGS=0 to 10 V
Rev. 1.2 page 3 2009-12-17
IPP039N04L G
IPB039N04L G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1 100101102
10-1
100
101
102
103
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
10-3
tp [s]
ZthJC [K/W]
0
20
40
60
80
100
0 50 100 150 200
TC [°C]
Ptot [W]
0
20
40
60
80
100
0 50 100 150 200
TC [°C]
ID [A]
Rev. 1.2 page 4 2009-12-17
IPP039N04L G
IPB039N04L G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
3.5 V
4 V
4.5 V
5 V
10 V
0
1
2
3
4
5
6
7
0 40 80 120 160 200
ID [A]
RDS(on) [mΩ]
25 °C
175 °C
0
50
100
150
200
250
012345
VGS [V]
ID [A]
0
40
80
120
160
200
0 20406080100
ID [A]
gfs [S]
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
50
100
150
200
250
0123
VDS [V]
ID [A]
Rev. 1.2 page 5 2009-12-17
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IPB039N04L G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=80 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=250 μA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
1
2
3
4
5
6
7
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
104
103
102
101
0 10203040
VDS [V]
C [pF]
25 °C
175 °C
25 °C, 98%
175 °C, 98%
1
10
100
1000
0.0 0.5 1.0 1.5 2.0
VSD [V]
IF [A]
Rev. 1.2 page 6 2009-12-17
IPP039N04L G
IPB039N04L G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=30 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20
25
30
35
40
45
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
150 °C
103
102
101
100
10-1
1
10
100
tAV [µs]
IAV [A]
8 V
20 V
32 V
0
2
4
6
8
10
12
0204060
Qgate [nC]
VGS [V]
Rev. 1.2 page 7 2009-12-17
IPP039N04L G
IPB039N04L G
Package Outline PG-TO220-3-1
Footprint: Packaging:
Rev. 1.2 page 8 2009-12-17
IPP039N04L G
IPB039N04L G
Package Outline PG-TO263-3
Rev. 1.2 page 9 2009-12-17
IPP039N04L G
IPB039N04L G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
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reasonably be expected to cause the failure of that life-support device or system or to affect
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Rev. 1.2 page 10 2009-12-17
