TECHNICAL DATA
PNP SILICON SMALL SIGNAL TRANSISTOR
Qualified per MIL-PRF-19500/392
Devices Qualified Level
2N3485A 2N3486A
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N3485A
2N3486A
Unit
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current -- Continuous IC 600 mAdc
Total Power Dissipation @ TA = +250C(1)
@ TC = +250C(2) PT 0.4
2.0 W
W
Operating & Storage Junction Temperature Range TJ, Tstg -55 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance Junction-to-Ambient
Junction-to-Case
RθJA
RθJC
0.439
87
0mC/W
0C/W
1) Derate linearly 2.28 mW/0C above TA = +250C
2) Derate linearly 11.43 mW/0C above TC = +250C
TO-46*
(TO-206AB)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc V(BR)CEO 60 Vdc
Collector-Base Cutoff Current
VCB = 50 Vdc
VCB = 60 Vdc ICBO
10
10
ηAdc
µAdc
Emitter-Base Cutoff Current
VEB = 3.5 Vdc
VEB = 5.0 Vdc IEBO
50
10
ηAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3485A, 2N3486A JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc 2N3485A
2N3486A
IC = 1.0 mAdc, VCE = 10 Vdc 2N3485A
2N3486A
IC = 10 mAdc, VCE = 10 Vdc 2N3485A
2N3486A
IC = 150 mAdc, VCE = 10 Vdc 2N3485A
2N3486A
IC = 500 mAdc, VCE = 10 Vdc 2N3485A
2N3486A
hFE
40
75
40
100
40
100
40
100
40
50
120
300
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc VCE(sat)
0.4
1.6 Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc VBE(sat)
1.3
2.6 Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2N3485A
2N3486A
hfe
40
100
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz hfe 2.0 10
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 8.0 pF
Input Capacitance
VEB = 2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 30 pF
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
