Prelim. 9/99
2N7000
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSIST OR
FEATURES
• V(BR)DSS = 60V
• RDS(ON) = 5
WW
WW
• ID= 1A
VDS Drain – Source Voltage
VGS Gate – Source Voltage
IDDrain Current
IDM Pulsed Drain Current
PDPower Dissipation @ TCASE = 25°C
Derate above 25°C
Tj,Tstg Operating and Storage Temperature Range
TLMaximum Lead Temperature for Soldering Purposes,
1/16 from case for 10 seconds
60V
±40V
200mA
500mA
400mW
3.2mW/°C
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
TO92 PACKAGE
0.45
14.0 0.44
5.0
5.0
4.0
2.6
4.0
PIN 1 – Drain PIN 2 – Gate PIN 3 – Drain
THERMAL CHARACTERISTIC Min. Typ. Max. Unit
R
q
JA Thermal Resistance, Junction to Ambient 312.5 °C/W
V(BR)DSS Gate – Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IGSS Gate – Body Leakage Current Forward
IDSS Zero Gate Voltage Drain Current
ID(on)* On–State Drain Current
RDS(on)* Drain – Source On Resistance
VDS(on)* Drain – Source On Voltage
gFS* Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
tON Turn–On Time
tOFF Turn–Off Time
Prelim. 9/99
2N7000
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
VGS = 0V ID= 10
m
A
VDS = VGS ID= 1mA
VGSF = 15V VDS = 0V
VDS = 48V VGS = 0V
TJ= 125°C
VGS = 4.5 VDS = 10V
VGS = 10V
ID= 0.5A TCASE = 125°C
VGS = 10V ID= 0.5A
VGS = 4.5V ID= 75mA
VGS = 10V ID= 200mA
VDS = 25V
VGS = 0V
f = 1MHz
VDD = 15V RL= 25
W
RG= 25
W
ID= 600mA
60
0.8 3.0
-10
1
1
75 5
9
2.5
0.4
100
60
25
5
10
10
V
nA
m
A
mA
mA
W
V
m
mhos
pF
ns
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
* Pulse Test: PW = 300
m
s ,
d£
2%
Parameter Test Conditions Min. Typ. Max. Unit
