1
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 250
VDSX 250
Continuous Drain Current ID59
Pulsed Drain Current ID(puls] ±236
Gate-Source Voltage VGS ±30
Maximum Avalanche current IAR 59
Non-Repetitive EAS 1115.2
Maximum Avalanche Energy
Repetitive EAR 41
Maximum Avalanche Energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt 5
Max. Power Dissipation PD210
3.13
Operating and Storage Tch +150
Temperature range T stg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
2SK3779-01R
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero Gate Voltage Drain Current IDSS VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=29.5A VGS=10V
ID=29.5A VDS=25V
VCC=72V ID=29.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 0.595
40.0 °C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=150V
ID=32A
VGS=10V
IF=59A VGS=0V Tch=25°C
IF=59A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
W
°C
°C
250
3.0 5.0
25
250
100
43 53
12 24
3800 5400
530 795
35 52.5
40 60
62 93
70 105
20 30
80 120
30 45
25 38
1.20 1.50
370
4.5
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super F AP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 250V
Note *4
Tc=25°C
Ta=25°C
=
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=24A,L=3.25mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS, Tch 150°C
=
<
Features
High speed switching Low on-resistance
No secondary breakdown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
=
<
=
<=
<
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Characteristics
2SK3779-01R FUJI POWER MOSFET
0 25 50 75 100 125 150
0
100
200
300
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0510
0
20
40
60
80
100
120
7V
20V
10V
8V
6.5V
VGS=6.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V ,Tch=25°C
0 102030405060708090100110
0.00
0.05
0.10
0.15
0.20
8V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resi s tance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
10V
20V
7V
6.5V
VGS=6V
-50 -25 0 25 50 75 100 125 150
0.00
0.05
0.10
0.15
RDS(o n) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resi stance
RDS(on)=f(Tch):ID=29.5A,VGS=10V
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3
2SK3779-01R FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS(th) [V]
Tch [°C]
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
0
2
4
6
8
10
12
14
Qg [nC]
Ty pical Gate Charge Characteristics
VGS=f(Qg):ID=59A,Tch=25 °C
VGS [V]
200V
125V
Vcc= 50V
10-1 100101102103
100
101
102
103
104
C [pF]
VDS [V]
Typical Capacit anc e
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
1000
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
10-1 100101102103
100
101
102
103
104
Typical Switching Charac t eri s tics vs. ID
t=f(ID):Vcc=72V,VGS=10V,RG=10 Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 255075100125150
0
200
400
600
800
1000
1200
IAS=24A
IAS=36A
IAS=59A
EAV [mJ]
starting Tch [ °C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=59A
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2SK3779-01R FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):start ing Tch= 25 °C,Vcc=48V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Transient T herm al Im pedanc e
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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