=44 SEME IRFM150 Dimensions in mm (inches) N-CHANNEL POWER MOSFET 018 13.8 (0.548) 8.60 (0.200) L200 Voss 100V | lp(cont) 34A | Rpsion) 0.0702 a8 FEATURES ager N-CHANNEL MOSFET SE . HIGH VOLTAGE =P - INTEGRAL PROTECTION DIODE - HERMETIC ISOLATED TO-254 PACKAGE * - CERAMIC SURFACE MOUNT PACKAGE ato 8) stotto OPTION 3.81 (0.150) BSC BSC TO-254AA Isolated Metal Package Pin 1 Drain Pin 2 Source Pin 3 Gate ABSOLUTE MAXIMUM RATINGS (T, = 25C unless otherwise stated) Vas Gate Source Voltage +20V Ip Continuous Drain Current @ Ves = 10V , Te = 25C 34A @ Veg = 10V , To = 100C 21A lou Pulsed Drain Current 136A Pp Max. Power Dissipation @ Tc = 25C 150W Linear Derating Factor 1.2W/C I Avalanche Current , Clamped 1 34A dv / dt Peak Diode Recovery 2 5.5V/ns Resc Thermal Resistance Junction Case 0.83C /W Rea Thermal Resistance Junction Ambient 48C /W Recs Thermal Resistance Case Sink 0.21C / W typ. Ty, Tstg Operating Junction and Storage Temperature Range 55 to 150C T, Lead Temperature (1.6mm from case for 10s) 300C 1) Vpp = 25V , Starting Ty = 25C , L > 200uH , Rg = 25, Peak |, = 34A 2) Isp < 344A , di/dt < 70A/US , Vpp < BVpgg . Ty $ 150C , Suggested Re = 2.350 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http:/Awww.semelab.co.uk Prelim. 9/95 ="r= SEME LAB ELECTRICAL CHARACTERISTICS (Ty = 25C unless otherwise stated) IRFM150 Parameter | Test Conditions | Min. | Typ. | Max. | Unit STATIC ELECTRICAL RATINGS BVpsg Drain Source Breakdown Voltage | Veg =0 Ip = 1mA 100 Vv ABVpss Temperature Coefficient of Reference to 25C 0.413 vec AT; Breakdown Voltage Ip = 1mA R Static Drain Source OnState Veg = 10V Ip=21A 0.070 PS(n) Resistance 2 Veg = 10V Ip = 34A 0.081 Vesith) Gate Threshold Voltage Vos = Ves Ip = 250uA 2 4 V Dts Forward Transconductance 2 Vps 2 15V Ips =21A 9 S(O) Veg = 0 Vos = 0.8BV 25 Ipss Zero Gate Voltage Drain Current Gs pS DSS LA Ty = 125C 250 less Forward Gate Source Leakage Veg = 20V 100 A n less Reverse Gate Source Leakage Veg = -20V 100 DYNAMIC CHARACTERISTICS Ciss Input Capacitance 3700 Coss Output Capacitance 1100 - Vos = 25V pF Criss Reverse Transfer Capacitance f= 1MHz 200 Coc Drain Case Capacitance - 12 Qg Total Gate Charge Veg = 10V 50 125 Qgs Gate Source Charge Ip = 34A 8 22 nc Qga Gate Drain (Miller) Charge Vps = 0.5BVpss 15 65 t Turn On Delay Time 35 dion) y Vpp = SOV t Rise Time 190 Ip = 34A ns tao) TurnOff Delay Time 170 Rg = 2.352 t Fall Time 130 SOURCE DRAIN DIODE CHARACTERISTICS Is Continuous Source Current 34 A Ism Pulse Source Current 1 136 Ig = 34A Ty = 25C Vsp Diode Forward Voltage @ 1.8 V Vas = 0 ter Reverse Recovery Time @ Ip = 34A Ty = 25C 500 ns Qr Reverse Recovery Charge 2 dj/d,< 100A/us Vpp < 50V 2.9 uc ton Forward TurnOn Time Negligible PACKAGE CHARACTERISTICS Lp Internal Drain Inductance Measured from 6mm down drain lead to centre of die 8.7 4 n Ls Internal Source Inductance Measured from 6mm down source lead to source bond pad 8.7 Notes 1) Repetitive Rating Pulse width limited by Maximum Junction Temperature 2) Pulse Test: Pulse Width < 300us, 5 < 2%. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Prelim. 9/95 Website http:/Awww.semelab.co.uk