IKW15T120 (R) TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop(R) and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C * * * * * * * * * * * Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D Short circuit withstand time - 10s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop(R) and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ E PG-TO-247-3 VCE IC VCE(sat),Tj=25C Tj,max Marking Code Package 1200V 15A 1.7V 150C K15T120 PG-TO-247-3 Type IKW15T120 G Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25C TC = 100C IC Pulsed collector current, tp limited by Tjmax ICpuls 45 Turn off safe operating area - 45 A 30 15 VCE 1200V, Tj 150C Diode forward current IF TC = 25C 30 TC = 100C 15 Diode pulsed current, tp limited by Tjmax IFpuls 45 Gate-emitter voltage VGE 20 V tSC 10 s Ptot 110 W C Short circuit withstand time 2) VGE = 15V, VCC 1200V, Tj 150C Power dissipation TC = 25C Operating junction temperature Tj -40...+150 Storage temperature Tstg -55...+150 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 http://store.iiic.cc/ Rev. 2.3 Sep 08 IKW15T120 (R) TrenchStop Series Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 1.1 K/W RthJCD 1.5 RthJA 40 Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - T j = 25C - 1.7 2.2 T j = 125 C - 2.0 - T j = 150 C - 2.2 - T j = 25C - 1.7 2.2 T j = 125 C - 1.7 - T j = 150 C - 1.7 - 5.0 5.8 6.5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =0.5mA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V, I C =15A VGE=0V, IF=15A Gate-emitter threshold voltage VGE(th) I C =0.6mA,V C E =V G E Zero gate voltage collector current ICES V C E = 12 00 V , VGE=0V mA T j = 25C - - 0.2 T j = 150 C - - 2.0 Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 100 nA Transconductance gfs V C E =20V, I C =15A - 10 - S Integrated gate resistor RGint Power Semiconductors none 2 http://store.iiic.cc/ Rev. 2.3 Sep 08 IKW15T120 (R) TrenchStop Series Dynamic Characteristic Input capacitance Ciss V C E =25V, - 1100 - Output capacitance Coss VGE=0V, - 100 - Reverse transfer capacitance Crss f=1MHz - 50 - Gate charge QGate V C C = 96 0 V, I C =15A - 85 - nC - 13 - nH - 90 - A pF V G E =15V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) V G E =15V,t S C 1 0 s V C C = 600 V, T j = 2 5C IC(SC) Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. typ. max. - 50 - - 30 - - 520 - - 60 - - 1.3 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 1.4 - Ets T j = 25C , V C C = 60 0 V, I C =15A, V G E = 0 /1 5 V, R G = 5 6 , L 2 ) =1 80nH, C 2 ) =39pF Energy losses include "tail" and diode reverse recovery. - 2.7 - Diode reverse recovery time trr T j = 25C , - 140 - ns Diode reverse recovery charge Qrr V R = 60 0 V , I F =15A, - 1.9 - C Diode peak reverse recovery current Irrm d i F /d t= 600A/s - 17 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 230 - A/s mJ Anti-Parallel Diode Characteristic 1) 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors 3 http://store.iiic.cc/ Rev. 2.3 Sep 08 IKW15T120 (R) TrenchStop Series Switching Characteristic, Inductive Load, at Tj=150 C Parameter Symbol Conditions Value min. typ. max. - 50 - - 35 - - 600 - - 120 - - 2.0 - Unit IGBT Characteristic - 2.1 - Ets T j = 150 C , V C C = 60 0 V, I C =15A, V G E = 0 /1 5 V, R G = 5 6 L 1 ) =1 80nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. - 4.1 - Diode reverse recovery time trr T j = 150 C - 330 - ns Diode reverse recovery charge Qrr V R = 60 0 V , I F =15A, - 3.4 - C Diode peak reverse recovery current Irrm d i F /d t= 600A/s - 21 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 190 - A/s Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns mJ Anti-Parallel Diode Characteristic 1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors 4 http://store.iiic.cc/ Rev. 2.3 Sep 08 IKW15T120 (R) TrenchStop Series tp=2s 30A 20A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 40A TC=80C TC=110C Ic 10A 0A 10Hz 10A 10s 50s 1A 150s 500s Ic 100Hz 1kHz 10kHz 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 56) 20ms DC 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V) IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 100W 80W 60W 40W 20A 10A 20W 0W 25C 50C 75C 100C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C) Power Semiconductors 0A 25C 75C 125C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C) 5 http://store.iiic.cc/ Rev. 2.3 Sep 08 IKW15T120 (R) TrenchStop Series 40A VGE=17V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 40A 15V 30A 13V 11V 20A 9V 7V 10A 0A 15V 30A 13V 11V 20A 9V 7V 10A 0A 0V 1V 2V 3V 4V 5V 6V 0V 40A 35A 30A 25A 20A 15A 10A TJ=150C 25C 5A 0A 0V 2V 4V 6V 8V 10V 12V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) IC, COLLECTOR CURRENT VGE=17V 3,0V IC=30A 2,5V 2,0V IC=15A 1,5V IC=8A IC=5A 1,0V 0,5V 0,0V -50C 0C 50C 100C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 6 http://store.iiic.cc/ Rev. 2.3 Sep 08 IKW15T120 (R) TrenchStop Series td(off) 1s 100ns tf t, SWITCHING TIMES t, SWITCHING TIMES td(off) td(on) tr 10ns 1ns 0A 10A 100ns 10ns 10 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=56, Dynamic test circuit in Figure E) td(on) tr 1ns 20A tf 35 60 85 110 RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES td(off) 100ns tf td(on) tr 10ns 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=56, Dynamic test circuit in Figure E) Power Semiconductors 7V 6V max. 5V typ. 4V min. 3V 2V 1V 0V -50C 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.6mA) 7 http://store.iiic.cc/ Rev. 2.3 Sep 08 IKW15T120 (R) TrenchStop Series 8,0mJ 6,0mJ 4,0mJ Ets* 2,0mJ Eoff 5A 10A 15A 20A 3 mJ Eon* 2 mJ Eoff 1 mJ 6mJ E, SWITCHING ENERGY LOSSES 4mJ 3mJ E ts * 2mJ E off E on* 100C 150C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=56, Dynamic test circuit in Figure E) Power Semiconductors 30 55 80 105 *) Eon and Ets include losses due to diode recovery 5mJ 4mJ 3mJ 2mJ 1mJ 50C 5 RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E) *) E on and E ts include losses due to diode recovery E, SWITCHING ENERGY LOSSES 4 mJ 0 mJ 25A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=56, Dynamic test circuit in Figure E) 0mJ Ets* Eon* 0,0mJ 1mJ *) Eon and Ets include losses due to diode recovery 5 mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Etsinclude losses due to diode recovery Ets* Eoff Eon* 0mJ 400V 500V 600V 700V 800V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150C, VGE=0/15V, IC=15A, RG=56, Dynamic test circuit in Figure E) 8 http://store.iiic.cc/ Rev. 2.3 Sep 08 IKW15T120 (R) TrenchStop Series 15V 240V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 1nF 960V 10V Crss 5V 0V 0nC 50nC IC(sc), short circuit COLLECTOR CURRENT 10s tSC, 5s 12V 14V 10V 20V 125A 100A 75A 50A 25A 0A 16V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C) Power Semiconductors 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) 15s 0s 10pF 100nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A) SHORT CIRCUIT WITHSTAND TIME Coss 100pF 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C) 9 http://store.iiic.cc/ Rev. 2.3 Sep 08 IKW15T120 (R) VCE 30A 400V 20A 200V 0V 10A ZthJC, TRANSIENT THERMAL RESISTANCE 600V 20A 400V IC 200V 10A 0A 0us 0.5us 1us 0 D=0.5 R,(K/W) 0.121 0.372 0.381 0.226 0.2 0.1 0.05 R1 0.02 0.01 , (s) -1 1.73*10 -2 2.75*10 -3 2.57*10 -4 2.71*10 R2 C1=1/R1 C2=2/R2 single pulse -2 10 K/W 10s 0V 0A 0us 1.5us 10 K/W 10 K/W 30A VCE IC t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=56, Tj = 150C, Dynamic test circuit in Figure E) -1 IC, COLLECTOR CURRENT 600V 0.5us 1us 1.5us t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=56, Tj = 150C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE VCE, COLLECTOR-EMITTER VOLTAGE TrenchStop Series 0 10 K/W D=0.5 0.2 R,(K/W) 0.360 0.477 0.434 0.224 0.1 -1 0.05 R1 10 K/W 0.02 0.01 single pulse , (s) -2 7.30*10 -3 8.13*10 -3 1.09*10 -4 1.55*10 R2 C1= 1/R1 C2= 2/R2 10ms 100ms -2 100s 1ms 10ms 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 10 K/W 10s 100s 1ms tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T) 10 http://store.iiic.cc/ Rev. 2.3 Sep 08 IKW15T120 (R) TrenchStop Series 500ns 400ns 300ns 200ns TJ=150C 100ns 0ns 200A/s Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 600ns TJ=25C 400A/s 600A/s 3C 2C TJ=25C 1C 0C 200A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) TJ=150C 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) 25A TJ=25C 20A 15A 10A 5A 0A 200A/s 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) Power Semiconductors TJ=25C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT TJ=150C 30A -300A/s TJ=150C -200A/s -100A/s -0A/s 200A/s 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) 11 http://store.iiic.cc/ Rev. 2.3 Sep 08 IKW15T120 (R) TrenchStop Series TJ=25C 40A 2,0V VF, FORWARD VOLTAGE IF, FORWARD CURRENT 150C 30A 20A 10A 0A IF=30A 1,5V 15A 8A 5A 1,0V 0,5V 0V 1V 0,0V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors -50C 0C 50C 100C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature 12 http://store.iiic.cc/ Rev. 2.3 Sep 08 IKW15T120 (R) TrenchStop Series PG-TO247-3 M M MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60 MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 5.44 3 19.80 4.17 3.50 5.49 6.04 Power Semiconductors MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102 Z8B00003327 0 0 5 5 7.5mm 0.214 3 20.31 4.47 3.70 6.00 6.30 0.780 0.164 0.138 0.216 0.238 13 http://store.iiic.cc/ 0.799 0.176 0.146 0.236 0.248 17-12-2007 03 Rev. 2.3 Sep 08 IKW15T120 (R) TrenchStop Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 r2 n rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Power Semiconductors 14 http://store.iiic.cc/ Figure E. Dynamic test circuit Leakage inductance L =180nH a nd Stray capacity C =39pF. Rev. 2.3 Sep 08 (R) IKW15T120 TrenchStop Series Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 15 http://store.iiic.cc/ Rev. 2.3 Sep 08