Features Automatic power-down when dese- lected Transparent write (7C161A) CMOS for optimum speed/power High speed 12 ns tay Low active power 935 mW Low standby power 220 mW TTL-compatible inputs and outputs e CYPRESS SEMICONDUCTOR CY7CI6IA CY7C162A Capable of withstanding greater than 201 electrostatic discharge. Functional Description The CY7C161A and CY7C162A are high- performance CMOS static RAMs orga- nizes as 16,384 by 4 bits with separate /O. Easy memory expansion is provided by ac- tive LOW chip enables (CE;, CE) and three-state drivers. They have an automat- ic power-down feature, reducing the power consumption by 60% when deselected. Writing to the device is accomplished when the chip enable (CE), ) and write enable inputs are both LOW. Data on the four input pins (Ip through I3) 16,384 x 4 Static R/W RAM Separate I/O is written into the memory location speci- fied on the address pins (Ao through Aj3). Reading the device is accomplished by taking the chip enables (CE), CE)) LOW while write enable (WE) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the four data output pins. The output pins stay in high-impedance state when write enable is LOW 7C162A only), or one of the chip enables 1, CE) are HIGH. A die coat is used to insure alpha immunity. Logic Block Diagram WPUT BUFFER Pin Configurations Aa pt Ai Ao acto < 3 x Op 7 22 10 Ai g CNOA x ; 7C161A v Aa oO Aeg 7CIG2A 3, b Ni 510 20 Oy 1" t AS 2 ve, 42 is o as os 1914151617 7 S2e ee C161A3 COLUMN DECODER | | CowN zr, C161A2 C - uw Cid WE DE 1 : cre1Ad Selection Guidel!] TCIGIA~ 12: -7CI6IA15 | 7C161A20 | 7C161A-25 | 7C161A-35 | 7C161A-45 7C162A~12" | 7C162A~15' | 7C162A-20 | 7C162A~25 | 7C162A-35 | 70162A45 Maximum Access Time (ns) 12 15 20 25 35 45 Maximum Operating | Military 170 160 100 100 100 100 Current (mA Maximum Standby Military 40/20 40/20 40/20 40/20 30/20 30/20 Current (mA) Shaded area contains advanced information. Note: 1. For commercial specifications, see the CY7C161/CY7C162 datasheet. 2~194J Y PRESS SEMICONDUCTOR CY7CI161A CY7C162A Maximum Ratings (Above which the useful life may be impaired. Foruserguidelines, | Output Current into Outputs (Low) ................ 20mA not tested.) Static Discharge Vollage .....0...0..c0. ces cee ees >2001V Storage Temperature ................. ~ 65Cto +150C (Per MIL-STD-883, Method 3015) atch- 2 5 Ambient Temperaturewith Latch-UpCurrent ......... 0.0: cece e eee eee nee >200mA PowerApplied ............2...,2.0005 55C to + 125C Oo . erating Range Supply Voltage to Ground Potential P 8 8 (Pin 24 to Pin 12) 2.0... eee ~ 0.SV to +7.0V Ambient DC Voltage Applied to Outputs Range Temperature Yee inHigh ZState ............. 00 cece eee 0.5V to +7.0V Military] 55C to +125C 5V + 10% DC Input Voltage .........2......2.0405 3.0V to +7.0V Electrical Characteristics Over the Operating Rangel?l 7C161A~12 | 7CIG1IA-15 | 7C161A-20 7C162A~12 | 7CL6ZA-15 | 7C162A20 Parameters Description Test Conditions Min. | Max. | Min. | Max. | Min. | Max. | Units Vou Output HIGH Voltage | Voc = Min. low = 4.0 mA 2.4 2.4 2.4 v VoL Output LOW Voltage | Vcc = Min., Io, = 8.0 mA 0.4 0.4 0.4 v Vin Input HIGH Voltage 2.2 Vcc 2.2 Vec 2.2 Voc v Vit Input LOW Voltagel4l -05] 08 |-05] 08 |-30] 08 v hx Input Load Current GND < V, < Voc -10 [| +10 | -10 | +10 | -10 | +10 pA loz Output Leakage GND < V; < Vcc, -10 7] +10 | -10 | +10 | 10 | +10 WA Current Output Disabled los Output Short Voc = Max, Vout = GND - 350 350 -350 | mA CircuitCurrentl5! lec Vcc Operating Voc = Max. Military 170 160 100 mA Supply Current IouT = OMA Isat Automatic CE Max. Voc. CE > Vii, | Military 40 40 40 mA Power-DownCurrent | Min. Duty Cycle = 100% Isp2 Automatic CE Max. Voc, Military 20 20 20 | mA Power-DownCurrent | CE, > Voc 03V, Vin = Voo 0.3V or Vin < 0.3V Shaded area contains advanced information. Notes: 2. Ty is the instant on case temperature. 4.) Vit min. = 3.0V for pulse durations less than 30 ns. 3. See the last page of this specification for Group A subgroup testing in- formation. 2- 5. Not more than | outpul should be shorted al one time. Duration of the short circuit should not exceed 30 seconds. 195 SRAMs |_ CY7C161A Wi es CY7C162A SEMICONDUCTOR Electrical Characteristics Over the Operating Rangel?l (continued) TCIGIA25 |] 7C161A35, 45 TCIGZA25 |] 7C162A35, 45 Parameters Description Test Conditions Min. | Max, Min. Max. Units Vou Output HIGH Voltage Voc = Min, Igy = 4.0mA 2.4 2.4 Vv VoL Output LOW Voltage Vec = Min. IoL = 8.0 mA 0.4 0.4 v Vin Input HIGH Voltage 2.2 Voc 2.2 Vec Vv Vit Input LOW Voltagel4] -3.0 ] 08 -3.0 08 v lix Input Load Current GND V1 < Vcc 10 | +10 -10 +10 pA loz Output Leakage Current GND < Vj < Vcc, Output Disabled -10 } +10 -10 +10 pA los Output Short Voc = Max.. Vour = GND ~350 350 mA Circuit Current!) lec Vcc Operating Voc = Max., lour =0mA | Military 100 100 mA Supply Current Ispi Automatic CE Max. Voc, CE > Vin, Military 40 30 mA Power-DownCurrent Min. Duty Cycle = 100% Isp2 Automatic CE Max. Vcc, Military 20 20 mA Power-DownCurrent CE) > Voc O3V, VIN > Voc ~ 03V or Vin <0.3V Capacitance! Parameters Description Test Conditions Max. Units Cin Input Capacitance Ta = 25C, f = 1 MHz, 10 pF Cour OutputCapacitance Veo = 5.0V 10 pF Note: 6. Tested initially and after any design or process changes that may affect these parameters. AC Test Loads and Waveforms sy At 481Q Sv R1 4819 OUTPUT : OUTPUT ALL INPUT PULSES 3.0V 30 pF ; R2 5 pF Re 255Q 255Q GND INCLUDING 1. LL INCLUDING LL JIGAND - JIGAND SCOPE (a) SCOPE (b) C1BIAS CIBIAS Equivalent to: THEVENIN EQUIVALENT 1672 OUTPUT o__-~w_-0 1.73V 2-196 ae a CY7CI161A - PRESS CY7C162A / SEMICONDUCTOR Switching Characteristics Over the Operating Rangel. 7 41 TCIGIA12 | 7C161A15 | 7C161A20 | 7CI61A25 | 7CL61A35 | 7C161A45 7C162A~12 | 7C162A~15 | 7C162A20 | 7C162A25 | 7C162A35 | 7C162A45 Parameters Description Min. | Max. | Min. | Max. | Min. {| Max. | Min. | Max. | Min. | Max. | Min. | Max. | Units READ CYCLE tre Read Cycle Time 12 15 20 25 35 45 ns tAA Address to Data Valid 12 15 20 25 35 45 ns toHA Output Hold from 3 3 5 5 5 5 ns Address Change tace CE LOW to Data Valid 12 15 20 25 35 45 ns tpoE OE LOW to Data Valid 6 7 10 12 1S 20 ns tLZ0E OE LOW to LOWZ [| 0 0 3 3 3 3 ns UIZOE OE HIGH te HIGH Z 7 8 8 10 12 15 ns tLzce CE LOW to Low ZPT [3 3 5 5 5 5 11s lazZcE CE HIGH to 7 8 8 10 15 15 ns High Z(? 10] Ip CE LOW to Power-Up | 0 0 0 0 0 0 ns {pp CE HIGH to 12 {5 20 20 20) 25 ns Power-Down WRITECYCLE!!!/ twe Write Cycle Time 12 15 20 20 25 40 ns isce CE LOW to Write End] 8 10 15 20 25 30 ns taw Address Set-Up to 9 10 15 20 25 30 ns Write End tHa Address Hold from 0 0 0 0 a 0 ns Write End tsa Address Set-Up to 0 0 0 0 0 0 ns Write Start tpwE WE Pulse Width 10 15 15 20 20 ns tsp Data Set-Up to 7 10 10 15 15 ns Write End tap Data Hold from 0 0 0 0 0 0 ns Write End tLZWE WE HIGH to 3 3 5 5 5 5 ns Low ZI9] (7C162A) tHizwE WE LOW to 6 7 7 7 10 15 ns High Z1: !91(7C162A) tAWE WE LOW to 12 15 20 25 30 35 ns Data Valid (7C161A) tapv Data Valid to Output 12 15 20 20 30 35 ns Valid (7C 161A) tpce CE LOW to Data Valid 12 15 20 25 30 38 ns (7CIGIA) Shaded area contains advanced information. Notes: 7. Test conditions assume signal transition time of 5 ns or less, timing ref- 10. trzceand tyizweare specified with CL = 5 pF as in part (b) of AC Test erence levels of 1.5V, inpul pulse levels of 0 to 3.0V, and output loading Loads and Waveforms, Transition is measured + 500 mV from steady of the specified Io_/Ior and 30-pF load capacitance. stale voltage. 8. Both CE, and CE2are represented by CE in the Switching Character- Lf. The internal write time of the memory is defined by the overlap of CE; istics and Waveforms sections. LOW, CE2 LOW, and WE LOW. Both signals must be LOW to initiate 9. Atanygiven temperature and voltage condition, tyyz is less than 11.7 for awrite andcither signal can terminate awrite by going HIGH. The data any given device. 2-197 inpul set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. SRAMs aF Batgi SEMICONDUCTOR CY7CI6IA CY7C162A Switching Waveforms|! Read Cycle No. 1112, 13] tac | ADDRESS x taa | toHa DATA OUT PREVIOUS DATA VALID XXX DATA VALID CIBIAS Read Cycle No. 2! 2. 14] a tac co n tace OE tpor tHz0E toe >J tHzce HIGH GH IMPEDANCE IMPEDANCE DATA OUT a M ca DATA VALID SAS {izcE t . pu ICC Voc SUPPLY 50% 50% CURRENT ISB CIBTA-7 Write Cycle No. 1 (WE Controlled)!!! two ADDRESS x SA LLL DATA IN taw tpwe tsp DATA-IN VALID tHzwe tLzwe HIGH IMPEDANCE tua DATA OUT DATA UNDEFINED (7C162A) DATA OUT DATA UNDEFINED DATA VALID (7C161A) CiB1A8 Notes: 12, WEisHIGH forread cycle, 13. Device is continuously selected, CE}, CE2 = Vir. 14. Address valid prior to or coincident with CE,, CE; transition LOW. 2-198CY7C161A CY7C162A OF CYPRESS SEMICONDUCTOR Switching Waveforms (continued) Write Cycle No. 2 (CE Controlled)!!! 15] two ADDRESS CE towe {sp DATA IN DATA-IN VALID HIGH IMPEDANCE DATA OUT (70162A) tHzce DATA OUT DATA VALID (7C161A) tapv C1819 Notes: _ _ 15. If CE goes HIGH simultaneously with WE HIGH, the output remains ina high-impedance state (7C162A only). Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT NORMALIZED SUPPLY CURRENT OUTPUT SOURCE CURRENT vs. SUPPLY VOLTAGE ys. AMBIENT TEMPERATURE _~ vs, OUTPUT VOLTAGE 14 12 120 o = B12 3 40 100 Q lec 8 lec a 2 1.0 L a a 0.8 5 80 wos w o 3 3 06 6 60 = 06 x 9 x & 04 3 40 8 0.4 S , cc = a 02 \ Vin = 5.0V 5 20 R SB 0.2 isa & 0.0 0.0 o 0 4.0 4.5 5.0 5.5 6.0 ~55 25 126 0.0 1.0 2.0 3.0 4.0 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) OUTPUT VOLTAGE (V) 2-199CY7C161A CY7C162A TE PRESS =. EMICONDUCTOR Typical DC and AC Characteristics (continued) NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE 14 1.6 s 13 ai4 O12 a a N N 1.2 5 a = 14 < Zs = = x S 1.0 9 1,0 z Voc = 5.0V 08 09 a 0.8 06 4.0 45 5.0 55 6.0 55 25 125 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) TYPICAL POWER-ON CURRENT TYPICAL ACCESS TIME CHANGE vs. SUPPLY VOLTAGE ys. OUTPUT LOADING 3.0 30.0 2 25 25.0 s Oo 20 20.0 N 215 2 15.0 . =z 15. z 3 1.0 & 10.0 Voc = 4.5V 0.5 5.0 Ta = 25C 0: 0.0 00 10 20 3.0 40 50 0 200 400 600 800 1000 SUPPLY VOLTAGE (V) CAPACITANCE (pF) Address Designators Address Address Pin Name Function Number AS X3 1 A6 X4 A7 XS 3 A8 X6 4 AQ X7 5 Al0 YO 6 All Yl 7 Al2 YS 8 Al3 Y4 9 AO Y3 23 Al Y2 24 A2 X0 25 A3 XI 26 A4 x2 27 2-200 OUTPUT SINK CURRENT vs, OUTPUT VOLTAGE ~ 140 = 120 E G & 100 5 3 80 x Zz 60 an 5 40 & > 20 oO 0 0.0 1.0 2.0 3.0 4.0 OUTPUT VOLTAGE (V) NORMALIZED Ic ys. CYCLE TIME 1.25 T Voc = 5.0V Ta = 25C 8 Voc = 0.5V & 1.00 A N LZ a x = | ac 3 0.75 ear 0.50 10 20 30 40 CYCLE FREQUENCY (MHz)CY7TCI61A = if ese CY7C162A BH SEMICONDUCTOR Ordering Information MILITARY SPECIFICATIONS Group A Subgroup Testing oP Ordering Code re Operating DC Characteristics 12 CY7C161A-12DMB D22 Military Parameters Subgroups CY7C161A12LMB LS4 Von 1,2,3 15 CY7C161A-15DMB D22 Military VoL 1,2,3 CY7C161A-15LMB L54 Vin 1, 2,3 20 CY7C161A20DMB D22 Military Vit Max. 1,2,3 CY7C161A-20LMB L54 lix 1,2,3 25 CY7C161A-25DMB D22 Military loz 1, 2,3 CY7C1I61A25LMB L54 los 1,2,3 35 CY7C161A35DMB D22 Military lec 1, 2,3 CY7C16LA3SLMB LS4 Isp 1, 2,3 45 CY7C161A-45DMB D22 Military Isp2 1, 2,3 CY7C161A45LMB L54 Switching Characteristics Speed Package | Operating (ns) Ordering Code Type Range Parameters | Subgroups 12 CY7C162A~12DMB D22 Military READ CYCLE CY7C162A~12KMB K74 tre 7,8, 9, 10, 11 CY7C162A12LMB LS4 taa 7, 8,9, 10, 11 15 CY7C162A15DMB D22 Military toHA 7, 8, 9, 10, 11 CY7C162A15KMB K74 tacE 7,8, 9, 10, 11 CY7C162A15LMB LS4 tpoE 7, 8,9, 10, 11 20 CY7C162A20DMB D22 Military WRITE CYCLE CY7C162A20KMB K74 twe 7, 8,9, 10, 11 CY7C162A20LMB L54 tscE 7, 8,9, 10, 11 25 CY7C162A25DMB D22 Military taw 7, 8,9, 10, 11 CY7C162A25KMB K74 tha 7, 8,9, 10, 11 CY7C162A25LMB L54 tsa 7,8, 9, 10, U1 35 CY7C162A-35DMB D22 Military tpwe 7,8, 9, 10, EL CY7C162A35KMB K74 tsp 7,8, 9, 10, 11 CY7C162A-35LMB L54 tp 7, 8, 9, 10, 11 45 CY7C162A-4SDMB D22 Military tawEl!4] 7,8, 9, 10, 11 CY7C162A45KMB K74 tapv! 3] 7, 8, 9, 10, H CY7C162A45LMB LS4 Notes: Shaded area contains advanced information. 16. 7CIGLA only. Document #: 3800116-A 2-201 SRAMs a