VUO50-14NO3
3~ Rectifier Bridge
Standard Rectifier Module
-
~ +~ ~
Part number
VUO50-14NO3
Features / Ad vantages: Applications: Package:
● Package with DCB ceramic
● Reduced weight
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
FO-F-B
● Industry standard outline
● RoHS compliant
● ¼“ fast-on terminals
● Easy to mount with two screws
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
RRM
1400
I60
FSM
500
DAV
V=V
A
A
=
=
I
3~
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130527bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO50-14NO3
V = V
A²s
A²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.07
R1.5 K/W
R
min.
60
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
110
P
tot
80 WT = 25°C
C
RK/W
20
1400
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.32
T = 25°C
VJ
150
V
F0
V0.78T = °C
VJ
150
r
F
8.5 mΩ
V0.98T = °C
VJ
I = A
F
V
20
1.30
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1400
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
25
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
500
540
905
880
A
A
A
A
425
460
1.25
1.22
1400
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1500
0.40
IXYS reserves the right to change limits, conditions and dimensions. 20130527bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO50-14NO3
Ratings
Lot Number
yywwx
Date Code
+ Assembly
line
Part Number
Package
T
VJ
°C
M
D
Nm2.5
mounting torque 2
T
stg
°C125
storage temperature -40
Weight g45
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
18.0 6.0
26.0 20.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 100 A
per terminal
150-40
terminal to terminal
FO-F-B
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUO50-14NO3 425621Box 10VUO50-14NO3Standard
3000
3600
ISOL
threshold voltage V0.78
mΩ
V
0 max
R
0 max
slope resistance * 7.3
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130527bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO50-14NO3
63
48
1.6
5.3 x 6.9
5.3 42
45°
31.6
10
1
2
3
4
5
6
7
8
9
24.5
21
6.3 x 0.8
12.5 12.5
10
6.2
5
6.2
5
++
~~~
__
-
~ +~ ~
Outlines FO-F-B
IXYS reserves the right to change limits, conditions and dimensions. 20130527bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO50-14NO3
011
200
400
600
800
1000
1200
1400
V
F
[V]
I
F
[A]
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
20
40
60
80
10
-3
10
-2
10
-1
10
0
150
200
250
300
350
400
450
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125 150 1750 5 10 15 20
0
5
10
15
20
25
0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
80
I
FSM
[A]
t[s] t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
F(AV)M
[A] T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.0607 0.00040
2 0.1330 0.00256
3 0.4305 0.00450
4 0.5130 0.02420
5 0.3628 0.18000
0.8 x V
RRM
50 Hz
T
VJ
=45°C
T
VJ
=45°C
V
R
=0 V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C T
VJ
=25°C
T
VJ
=150°C
T
VJ
=150°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
tvs.timeperdiode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fi
g
. 6 Transient thermal im
p
edance
j
unctiontocasevs.time
p
er diode
DC =
1
0.5
0.4
0.33
0.17
0.08
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130527bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
