Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
QM1000HA-24B
•ICCollector current ...................... 1000A
•VCEX Collector-emitter voltage ......... 1200V
•hFE DC current gain............................. 750
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
145
9
19 28
27
3728
8–φ6.5
74
3973
74
6565
27
9
163
51 47 25
B
E
BX
C
E
16 316 334 334
3–M4 2–M8
45
50MAX.
47MAX.
44.5
42
8
B
BX
E
E
C
LABEL
Feb.1999
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Ratings
1200
1200
1200
7
1000
1000
7000
50
10000
–40~+150
–40~+125
2500
8.83~10.8
90~110
1.96~2.94
20~30
0.98~1.47
10~15
0.98~1.47
10~15
2100
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=1200V, VEB=2V
VCB=1200V, Emitter open
VEB=7V, Collector open
IC=1000A, IB=1.33A
IC=–1000A (diode forward voltage)
IC=1000A, VCE=4.0V
VCC=600V, IC=1000A, IB1=2A, –IB2=20A
Transistor part
Diode part
Conductive grease applied
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
8.0
8.0
400
4.0
4.2
1.8
—
2.5
20
7.0
0.018
0.07
0.01
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M8
Mounting screw M6
B(E) terminal screw M4
BX terminal screw M4
Typical value
Feb.1999
1000
800
600
400
200
0012345
T
j
=25°C
I
B
=250mA
I
B
=1.33A
I
B
=4A
I
B
=0.5A
23457
7
5
4
3
2
7
5
4
3
2
23457
T
j
=25°C
T
j
=125°C
4
10
3
10
2
10
1
10
2
10
3
10
V
CE
=4.0V
7
5
4
3
2
7
5
4
3
2
23457 23457
–1
10
V
BE(sat)
V
CE(sat)
1
10
0
10
1
10
2
10
3
10
T
j
=25°C
T
j
=125°C
I
B
=1.33A
7
5
4
3
2
7
5
4
3
2
2.2 2.6 3.0 3.4
V
CE
=4V
T
j
=25°C
3.8 4.2
–1
10
0
10
1
10
–2
10
753275327532
5
4
3
2
1
0
Tj=25°C
Tj=125°C
0
10
–1
10
1
10
I
C
=1000A
I
C
=800A
I
C
=600A
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
3457 2 3457
3
10
2
t
on
V
CC
=600V
–I
B2
=20A
I
B1
=2A
23
t
f
Tj=25°C
Tj=125°C
t
s
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)SWITCHING TIME ton, ts, tf (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
Feb.1999
7
5
4
3
2
7
5
4
3
2
0 0.4 0.8 1.2 1.6 2.0
T
j
=25°C
T
j
=125°C
1
10
2
10
3
10
100
80
60
40
20
00 20 60 100 120 16040 80 140
10
30
50
70
90
–1
10
753275327532
0.020
0.016
0.012
0.008
0.004
0
23 57
0
10
1
10
–2
10
–3
10
0
10
2400
400
00 400 800 1200200 600 1000
1200
1600
800
2000
T
j
=125°C
–I
B2
=20A
753275327532
7
5
3
2
7
5
3
2
7
5
3
2T
C
=25°C
2
10
3
10
1
10
0
10
4
10
3
10
2
10
1
10
1ms
DC
100µs
50µs
200µs
7
5
3
2
23 57
7
5
3
2
2323 57
2
10
1
10
0
10
0
10
1
10
t
s
t
f
V
CC
=600V
I
C
=1000A
I
B1
=2A
T
j
=25°C
T
j
=125°C
4
4
444
NON–REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
Zth (j–c) (°C/ W)
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME ts, tf (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –IC (A)
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
Feb.1999
753275327532
0.10
0.08
0.06
0.04
0.02
0
7532
1
10
0
10
0
10
–3
10
–2
10
–1
10
7543275432
0
2000
4000
6000
8000
10000
0
10
1
10
2
10
7
5
4
3
2
7
5
4
3
2
57 2 3457
T
j
=25°C
T
j
=125°C
t
rr
I
rr
Q
rr
2
10
3
10
–1
10
V
CC
=600V
I
B1
=2A
–I
B2
=20A
2345
7
5
4
3
2
7
5
4
3
2
0
10
1
10
1
10
2
10
3
10
Zth (j–c) (°C/ W)
trr (µs)
Irr (A), Qrr (µc)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
