5 GHz to 11 GHz GaAs, pHEMT, MMIC,
Low Noise Amplifier
Data Sheet
HMC902
Rev. D Document Feedback
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FEATURES
Noise figure: 1.6 dB typical
Small signal gain: 20 dB typical
P1dB output power: 16 dBm typical
Supply voltage: 3.5 V at 80 mA typical
Output IP3: 28 dBm typical
50 Ω matched input/output
Self biased with optional bias control for quiescent drain
current (IDQ) reduction with no radio frequency (RF)
applied
Die size: 1.33 mm × 1.04 mm × 0.102 mm
APPLICATIONS
Point to point radios
Point to multipoint radios
Military and space
Test instrumentation
Industrial scientific and medical (ISM) radio band
Unlicensed national information infrastructure (UNII)
Wireless communication service (WCS)
FUNCTIONAL BLOCK DIAGRAM
2
6 5
3
VDD1
VGG1VGG2
VDD2
RFOUT
1
RFIN
4
HMC902
14525-001
Figure 1.
GENERAL DESCRIPTION
The HMC902 is a gallium arsenide (GaAs), pseudomorphic
(pHEMT) monolithic microwave integrated circuit (MMIC),
low noise amplifier (LNA), which is self biased with optional
bias control for IDQ reduction. The HMC902 operates between
5 GHz and 11 GHz. This LNA provides 20 dB of small signal
gain, 1.6 dB noise figure, and output IP3 of 28 dBm, requiring
only 80 mA from a 3.5 V supply. The P1dB output power of
16 dBm enables the LNA to function as a local oscillator (LO)
driver for balanced, I/Q, or image rejection mixers. The HMC902
also features inputs/outputs that are matched to 50 Ω for ease of
integration into multichip modules (MCMs). All data is taken
with the HMC902 in a 50 Ω test fixture connected via two
0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil)
length.
HMC902 Data Sheet
Rev. D | Page 2 of 13
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Specifications ............................................................... 3
Absolute Maximum Ratings ............................................................ 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Interface Schematics..................................................................... 5
Typical Performance Characteristics ..............................................6
Theory of Operation .........................................................................8
Applications Information .................................................................9
Mounting and Bonding Techniques for Millimeterwave GaAs
MMICs ............................................................................................. 10
Handling Precautions ................................................................ 10
Typical Application Circuits ..................................................... 11
Assembly Diagrams ................................................................... 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 13
REVISION HISTORY
1/2018—Rev. C to Rev. D
Changes to Table 2 ............................................................................ 4
10/2017—Rev. B to Rev. C
Changes to Electrostatic Discharge (ESD) Sensitivity, Human
Body Model (HBM) Parameter, Table 2 ........................................ 4
6/2017—Rev. A to Rev. B
Changed HMC902-Die to HMC902 ........................... Throughout
Changes to Figure 1 .......................................................................... 1
Changes to Figure 2 .......................................................................... 5
This Hittite Microwave Products data sheet has been reformatted to
meet the styles and standards of Analog Devices, Inc.
2/2017—Rev. 01.0911 to Rev. A
Updated Format .................................................................. Universal
Changes to Features Section, Applications Section, and General
Description Section ........................................................................... 1
Changes to Table 1 ............................................................................. 3
Added Electrostatic Discharge (ESD) Sensitivity, Human Body
Model (HBM) Parameter, Table 2 ................................................... 4
Changes to Table 3 ............................................................................. 5
Added Theory of Operation Section and Figure 19; Renumbered
Sequentially ......................................................................................... 8
Added Applications Information Section ...................................... 9
Changes to Figure 20 and Figure 21............................................. 10
Added Typical Application Circuits Section and Figure 23 ..... 11
Updated Outline Dimensions ....................................................... 13
Changes to Ordering Guide .......................................................... 13
Data Sheet HMC902
Rev. D | Page 3 of 13
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
TA = 25°C, VDD1 = VDD2 = 3.5 V, I DQ = 80 mA. VGG1 = VGG2 = no connection for nominal, self biased operation.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 5 11 GHz
SMALL SIGNAL GAIN 17 20 dB
Gain Variation over Temperature 0.012 dB/°C
RETURN LOSS
Input 12 dB
Output 15 dB
OUTPUT
Output Power for 1 dB Compression P1dB 16 dBm
Saturated Output Power PSAT 17.5 dBm
Output Third-Order Intercept IP3 28 dBm
NOISE FIGURE NF 1.6 2.1 dB
SUPPLY CURRENT
I
DQ
Quiescent drain current, no RF applied
80
mA
HMC902 Data Sheet
Rev. D | Page 4 of 13
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Drain Bias Voltage 4.5 V
Radio Frequency (RF) Input Power
10 dBm
Gate Bias Voltages
VGG1 −2 V to +0.2 V
VGG2 −2 V to +0.2 V
Channel Temperature 175°C
Continuous Power Dissipation, PDISS (T =
85°C, Derate 7 mW/°C Above 85°C)
0.63 W
Thermal Resistance (Channel to Die Bottom) 143.8°C/W
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −55°C to +85°C
Electrostatic Discharge (ESD) Sensitivity,
Human Body Model (HBM)
Class 1A, Passed
250 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Data Sheet HMC902
Rev. D | Page 5 of 13
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
2
6 5
3
V
DD
1
V
GG
1V
GG
2
V
DD
2
RFOUT
1RFIN
4
HMC902
NOTES
1. DIE BOTTOM MUST BE CONNECTED TO RF/DC GROUND.
14525-002
Figure 2. Pad Configuration
Table 3. Pad Function Descriptions
Pad No. Mnemonic Description
1 RFIN Radio Frequency Input. This pin is matched to 50 Ω. See Figure 3 for the interface schematic.
2, 3 VDD1, VDD2 Power Supply Voltages. Power supply voltage for the amplifier; see Figure 24 and Figure 25 for required
external components. See Figure 4 for the interface schematic.
4 RFOUT Radio Frequency Output. This pad is matched to 50 Ω. See Figure 5 for the interface schematic.
5, 6 VGG2, VGG1 Gate Control Voltages. Optional gate control for the amplifier. When left open, the amplifier is self biased.
Applying a negative voltage reduces the current. See Figure 6 for the interface schematic.
Die Bottom GND Ground. Die bottom must be connected to RF/dc ground. See Figure 7 for the interface schematic.
INTERFACE SCHEMATICS
RFIN
ESD
14525-003
Figure 3. RFIN Interface Schematic
V
DD
1, V
DD
2
14525-004
Figure 4. VDD1, VDD2 Interface Schematic
RFOUT
ESD
14525-005
Figure 5. RFOUT Interface Schematic
VGG1, VGG2
14525-006
Figure 6. VGG1, VGG2 Interface Schematic
GND
14525-007
Figure 7. GND Interface Schematic
HMC902 Data Sheet
Rev. D | Page 6 of 13
TYPICAL PERFORMANCE CHARACTERISTICS
25
–25
35 7 911 13
BROADBAND GAIN AND RETURN LOSS (dB)
FREQUENCY (GHz)
–15
–5
5
15
S11
S21
S22
14525-008
Figure 8. Broadband Gain and Return Loss vs. Frequency
0
–30
4 5 678910 11
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
+85°C
+25°C
–55°C
–25
–20
–15
–10
–5
14525-009
Figure 9. Input Return Loss vs. Frequency at Various Temperatures
6
0
45678910 11
NOISE FIGURE (dB)
FREQUENCY (GHz)
+85°C
+25°C
–55°C
1
2
3
4
5
14525-010
Figure 10. Noise Figure vs. Frequency at Various Temperatures
25
15
GAIN (dB)
17
19
21
23
45 6 7 8 9 10 11
+85°C
+25°C
–55°C
FREQUENCY (GHz)
14525-011
Figure 11. Gain vs. Frequency at Various Temperatures
0
–30
OUTPUT RETURN LOSS (dB)
5 6 7 8 9 10 11
FREQUENCY (GHz)
+85°C
+25°C
–40°C
–25
–20
–15
–10
–5
14525-012
Figure 12. Output Return Loss vs. Frequency at Various Temperatures
35
5
5 6 7 8 9 10
OUTPUT IP3 (dBm)
FREQUENCY (GHz)
+85°C
+25°C
–40°C
10
15
20
25
30
14525-013
Figure 13. Output IP3 vs. Frequency at Various Temperatures
Data Sheet HMC902
Rev. D | Page 7 of 13
25
0
P1dB (dBm)
45 6 78910 11
+85°C
+25°C
–55°C
5
10
15
20
FREQUENCY (GHz)
14525-014
Figure 14. P1dB vs. Frequency at Various Temperatures
0
–60
45678910 11
REVERSE ISOLATION (dB)
+85°C
+25°C
–55°C
–50
–40
–30
–20
–10
FREQUENCY (GHz)
14525-015
Figure 15. Reverse Isolation vs. Frequency at Various Temperatures
25
0
PSAT (dBm)
5678910 11
+85°C
+25°C
–55°C
5
10
15
20
FREQUENCY (GHz)
14525-016
Figure 16. PSAT vs. Frequency at Various Temperatures
24
–4
–21 –15–18 –12 –9 –6 –3 03
P
OUT
(dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
4
8
12
16
20
P
OUT
GAIN
PAE
14525-017
Figure 17. POUT, Gain, and Power Added Efficiency (PAE) vs. Input Power at 7 GHz
22
8
3.0 3.5 4.0
GAIN (dB), P1dB (dBm)
V
DD
(V)
10
12
14
16
18
20
P1dB
GAIN
NOISE FIGURE
7
6
5
4
3
2
0
1
NOISE FIGURE (dB)
14525-018
Figure 18. Gain, P1dB, and Noise Figure vs. Supply Voltage (VDD) at 7 GHz
HMC902 Data Sheet
Rev. D | Page 8 of 13
THEORY OF OPERATION
The HMC902 is GaAs, pHEMT, MMIC, low noise amplifier.
The HMC902 amplifier uses two gain stages in series. The basic
schematic for the amplifier is shown in Figure 19, which forms a
low noise amplifier operating from 5 GHz to 11 GHz with excellent
noise figure performance.
V
DD
1V
DD
2
V
GG
1 V
GG
2
RFOUT
RFIN
14525-019
Figure 19. Basic Schematic for the HMC902
The HMC902 has single-ended input and output ports with
impedances nominally equaling 50 Ω over the 5 GHz to 11 GHz
frequency range. Consequently, the device can be directly inserted
into a 50 Ω system with no required impedance matching circuitry,
meaning multiple HMC902 amplifiers can be cascaded back to
back without the need for external matching circuitry.
The input and output impedances are sufficiently stable vs.
variations in temperature and supply voltage so no impedance
matching compensation is required.
It is critical to supply very low inductance ground connections
to the exposed pad to ensure stable operation. To achieve optimal
performance from the HMC902 and to prevent damage to the
device, do not exceed the absolute maximum ratings.
Data Sheet HMC902
Rev. D | Page 9 of 13
APPLICATIONS INFORMATION
The HMC902 has VGG1 and VGG2 optional gate bias pads. When
these pads are left open, the amplifier runs in self biased operation
with typical IDQ = 80 mA. Figure 25 shows the basic connections
for operating the HMC902 in self biased operation mode. Both
the RFIN and the RFOUT ports of the HMC902 have on-chip
dc block capacitors, which eliminates the need for external
ac coupling capacitors.
When using the VGG1 and the VGG2 gate bias pads, follow bias
sequencing to prevent damage to the amplifier.
The recommended bias sequence during power-up is as follows:
1. Connect to GND.
2. Set VGG1 to −0.8 V.
3. Set VDD1 and VDD2 to 3.5 V.
4. Increase VGG1 to achieve typical IDQ = 80 mA.
5. Apply the RF signal.
The recommended bias sequence during power-down is as
follows:
1. Turn off the RF signal.
2. Decrease VGG1 to −0.8 V to achieve typical IDQ = 0 mA.
3. Decrease VDD1 and VDD2 to 0 V.
4. Increase VGG1 to 0 V.
The bias conditions previously listed (VDD1 and VDD2 = 3.5 V and
IDQ = 80 mA) are the recommended operating points to achieve
optimum performance. The data used in this data sheet is taken
with the recommended bias conditions listed in the Electrical
Specifications section. If the HMC902 is used with different bias
conditions than what is recommended, a different performance
than what is shown in the Typical Performance Characteristics
section can result. Decreasing the VDD level has a negligible
effect on gain and NF performance, but reduces P1dB. This
behavior is seen in Figure 18. For applications where the P1dB
requirement is not stringent, the HMC902 can be down biased
to reduce power consumption.
HMC902 Data Sheet
Rev. D | Page 10 of 13
MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS
The die is attached directly to the ground plane eutectically or
with conductive epoxy (see the General Handling section, the
Mounting section, and the Wire Bonding section).
The 50 Ω microstrip transmission lines on 0.127 mm (5 mil)
thick alumina thin film substrates are recommended for bringing
RF to and from the HMC902 (see Figure 20). When using
0.254 mm (10 mil) thick alumina thin film substrates, the die is
raised 0.150 mm (6 mil) so the surface of the die is coplanar
with the surface of the substrate. One way to accomplish this is
to attach the 0.102 mm (4 mil) thick die to a 0.150 mm (6 mil)
thick molybdenum heat spreader (moly tab), which then attaches
to the ground plane (see Figure 21).
RF GROUND PLANE
0.102mm (0.004") THICK GaAs MMIC
WIRE BOND
0.127mm (0.005") THICK ALUMINA
THIN FILM SUBSTRATE
0.076mm
(0.003")
14525-020
Figure 20. Routing RF Signal
RF GROUND PLANE
0.102mm (0.004") THICK GaAs MMIC
WIRE BOND
0.254mm (0.010") THICK ALUMINA
THIN FILM SUBSTRATE
0.150mm
(0.006") THICK
MOLY TAB
0.076mm
(0.003")
14525-021
Figure 21. Routing RF Signal with Moly Tab
Microstrip substrates are placed as close to the die as possible to
minimize bond wire length. Typical die to substrate spacing is
0.076 mm to 0.152 mm (3 mil to 6 mil).
HANDLING PRECAUTIONS
Follow the precautions detailed in the following sections to
avoid permanent damage to the device.
Storage
All bare die are placed in either waffle or gel-based ESD protective
containers and then sealed in an ESD protective bag for shipment.
After opening the sealed ESD protective bag, store all die in a
dry nitrogen environment.
Cleanliness
Handle the chips in a clean environment. Do not attempt to
clean the chip using liquid cleaning systems.
Static Sensitivity
Follow ESD precautions to protect against ESD strikes.
Transients
Suppress instrument and bias supply transients while bias is
applied. Use the shielded signal and bias cables to minimize
inductive pickup.
General Handling
Handle the chip along the edges with a vacuum collet or with a
sharp pair of bent tweezers. The surface of the HMC902 has
fragile air bridges and must not be touched with the vacuum
collet, tweezers, or fingers.
Mounting
The HMC902 is back metallized and can be die mounted with
gold tin (AuSn) eutectic preforms or with electrically
conductive epoxy. The mounting surface must be clean and flat.
Eutectic Die Attach
An 80% gold/20% tin preform is recommended with a work
surface temperature of 255°C and a tool temperature of 265°C.
When hot 90% nitrogen/10% hydrogen gas is applied, the tool
tip temperature is 290°C. Do not expose the chip to a temperature
greater than 320°C for more than 20 sec. No more than 3 sec of
scrubbing is required for attachment.
Epoxy Die Attach
Apply a minimum amount of epoxy to the mounting surface so
that a thin epoxy fillet is observed around the perimeter of the
HMC902 after it is placed into position. Cure epoxy per the
schedule of the manufacturer.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These
bonds are thermosonically bonded with a force of 40 g to 60 g.
DC bonds of 0.001 in (0.025 mm) diameter, thermosonically
bonded, are recommended. Create ball bonds with a force of
40 g to 50 g and wedge bonds at 18 g to 22 g. Create bonds with
a nominal stage temperature of 150°C. A minimum amount of
ultrasonic energy is applied to achieve reliable bonds. All bonds
are as short as possible, less than 12 mil (0.31 mm).
Data Sheet HMC902
Rev. D | Page 11 of 13
TYPICAL APPLICATION CIRCUITS
RFIN RFOUT
V
GG
2
V
DD
2
V
DD
1
V
GG
1
4.7µF 0.01µF 100pF
4.7µF 0.01µF 100pF 4.7µF
100pF 0.01µF
4.7µF
100pF 0.01µF
1
2
6
5
3
4
14525-024
Figure 22. Typical Application Circuit with Gate Control Option
RFIN RFOUT
V
DD
2
V
DD
1
4.7µF 0.01µF 100pF 4.7µF
100pF 0.01µF
1
2
3
4
14525-025
Figure 23. Typical Application Circuit with Self Biased Option
HMC902 Data Sheet
Rev. D | Page 12 of 13
ASSEMBLY DIAGRAMS
4.7µF
0.01µF
100pF
RFIN
100pF
100pF 100pF
TO VDD1 SUPPLY
TO VGG1 SUPPLY TO VGG2 SUPPLY
50Ω
TRANSMISSION
LINE 3mil NOMINAL GAP
0.01µF
0.01µF 0.01µF
4.7µF 4.7µF
4.7µF
TO VDD2 SUPPLY
ALL BOND WIRES ARE
1mil DIAMETER
VDD1
VGG1 VGG2
VDD2
RFOUT
++
+ +
14525-022
Figure 24. Assembly Diagram with Gate Control Option
4.7µF 4.7µF
0.01µF 0.01µF
100pF 100pF
TO V
DD
1 SUPPLY
50Ω
TRANSMISSION
LINE 3mil NOMINAL GAP
TO V
DD
2 SUPPLY
ALL BOND WIRES ARE
1mil DIAMETER
RFIN
V
DD
1
V
GG
1V
GG
2
V
DD
2
RFOUT
++
14525-023
Figure 25. Assembly Diagram with Self Biased Option
Data Sheet HMC902
Rev. D | Page 13 of 13
OUTLINE DIMENSIONS
08-29-2016-A
2010
*AIRBRIDGE
AREA
1.040
1.330
0.102
SIDE VIEW
TOP VIEW
1
23
4
56
0.112
0.513
0.404
0.335 0.300 0.450
0.161
0.07
0.193
0.264
0.197
0.326
0.200
0.126
*This die utilizes fragile air bridges. Any pickup tools used must not contact this area.
Figure 26. 6-Pad Bare Die [CHIP]
(C-6-9)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option
HMC902 −55°C to +85°C 6-Pad Bare Die [CHIP] C-6-9
HMC902-SX −55°C to +85°C 6-Pad Bare Die [CHIP] C-6-9
1 The HMC902-SX is a sample order of two devices.
©2018 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D14525-0-1/18(D)
