5 GHz to 11 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier HMC902 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM HMC902 2 VDD1 1 RFIN RFOUT VGG1 APPLICATIONS Point to point radios Point to multipoint radios Military and space Test instrumentation Industrial scientific and medical (ISM) radio band Unlicensed national information infrastructure (UNII) Wireless communication service (WCS) 3 VDD2 6 4 VGG2 5 14525-001 Noise figure: 1.6 dB typical Small signal gain: 20 dB typical P1dB output power: 16 dBm typical Supply voltage: 3.5 V at 80 mA typical Output IP3: 28 dBm typical 50 matched input/output Self biased with optional bias control for quiescent drain current (IDQ) reduction with no radio frequency (RF) applied Die size: 1.33 mm x 1.04 mm x 0.102 mm Figure 1. GENERAL DESCRIPTION The HMC902 is a gallium arsenide (GaAs), pseudomorphic (pHEMT) monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA), which is self biased with optional bias control for IDQ reduction. The HMC902 operates between 5 GHz and 11 GHz. This LNA provides 20 dB of small signal gain, 1.6 dB noise figure, and output IP3 of 28 dBm, requiring only 80 mA from a 3.5 V supply. The P1dB output power of Rev. D 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q, or image rejection mixers. The HMC902 also features inputs/outputs that are matched to 50 for ease of integration into multichip modules (MCMs). All data is taken with the HMC902 in a 50 test fixture connected via two 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 (c)2018 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com HMC902 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Typical Performance Characteristics ..............................................6 Applications ....................................................................................... 1 Theory of Operation .........................................................................8 General Description ......................................................................... 1 Applications Information .................................................................9 Functional Block Diagram .............................................................. 1 Revision History ............................................................................... 2 Mounting and Bonding Techniques for Millimeterwave GaAs MMICs ............................................................................................. 10 Specifications..................................................................................... 3 Handling Precautions ................................................................ 10 Electrical Specifications ............................................................... 3 Typical Application Circuits ..................................................... 11 Absolute Maximum Ratings............................................................ 4 Assembly Diagrams ................................................................... 12 ESD Caution .................................................................................. 4 Outline Dimensions ....................................................................... 13 Pin Configuration and Function Descriptions ............................. 5 Ordering Guide .......................................................................... 13 Interface Schematics..................................................................... 5 REVISION HISTORY 1/2018--Rev. C to Rev. D Changes to Table 2 ............................................................................ 4 10/2017--Rev. B to Rev. C Changes to Electrostatic Discharge (ESD) Sensitivity, Human Body Model (HBM) Parameter, Table 2 ........................................ 4 6/2017--Rev. A to Rev. B Changed HMC902-Die to HMC902 ........................... Throughout Changes to Figure 1 .......................................................................... 1 Changes to Figure 2 .......................................................................... 5 This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. 2/2017--Rev. 01.0911 to Rev. A Updated Format .................................................................. Universal Changes to Features Section, Applications Section, and General Description Section ...........................................................................1 Changes to Table 1.............................................................................3 Added Electrostatic Discharge (ESD) Sensitivity, Human Body Model (HBM) Parameter, Table 2 ...................................................4 Changes to Table 3.............................................................................5 Added Theory of Operation Section and Figure 19; Renumbered Sequentially .........................................................................................8 Added Applications Information Section ......................................9 Changes to Figure 20 and Figure 21............................................. 10 Added Typical Application Circuits Section and Figure 23 ..... 11 Updated Outline Dimensions ....................................................... 13 Changes to Ordering Guide .......................................................... 13 Rev. D | Page 2 of 13 Data Sheet HMC902 SPECIFICATIONS ELECTRICAL SPECIFICATIONS TA = 25C, VDD1 = VDD2 = 3.5 V, IDQ = 80 mA. VGG1 = VGG2 = no connection for nominal, self biased operation. Table 1. Parameter FREQUENCY RANGE SMALL SIGNAL GAIN Gain Variation over Temperature RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Output Third-Order Intercept NOISE FIGURE SUPPLY CURRENT Symbol P1dB PSAT IP3 NF IDQ Test Conditions/Comments Quiescent drain current, no RF applied Rev. D | Page 3 of 13 Min 5 17 Typ Max 11 20 0.012 Unit GHz dB dB/C 12 15 dB dB 16 17.5 28 1.6 80 dBm dBm dBm dB mA 2.1 HMC902 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Drain Bias Voltage Radio Frequency (RF) Input Power Gate Bias Voltages VGG1 VGG2 Channel Temperature Continuous Power Dissipation, PDISS (T = 85C, Derate 7 mW/C Above 85C) Thermal Resistance (Channel to Die Bottom) Storage Temperature Range Operating Temperature Range Electrostatic Discharge (ESD) Sensitivity, Human Body Model (HBM) Rating 4.5 V 10 dBm -2 V to +0.2 V -2 V to +0.2 V 175C 0.63 W Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION 143.8C/W -65C to +150C -55C to +85C Class 1A, Passed 250 V Rev. D | Page 4 of 13 Data Sheet HMC902 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS RFIN 3 VDD2 HMC902 VGG1 VGG2 6 5 RFOUT NOTES 1. DIE BOTTOM MUST BE CONNECTED TO RF/DC GROUND. 4 14525-002 1 2 VDD1 Figure 2. Pad Configuration Table 3. Pad Function Descriptions Pad No. 1 2, 3 Mnemonic RFIN VDD1, VDD2 4 5, 6 RFOUT VGG2, VGG1 Die Bottom GND Description Radio Frequency Input. This pin is matched to 50 . See Figure 3 for the interface schematic. Power Supply Voltages. Power supply voltage for the amplifier; see Figure 24 and Figure 25 for required external components. See Figure 4 for the interface schematic. Radio Frequency Output. This pad is matched to 50 . See Figure 5 for the interface schematic. Gate Control Voltages. Optional gate control for the amplifier. When left open, the amplifier is self biased. Applying a negative voltage reduces the current. See Figure 6 for the interface schematic. Ground. Die bottom must be connected to RF/dc ground. See Figure 7 for the interface schematic. INTERFACE SCHEMATICS ESD 14525-006 14525-003 RFIN VGG1, VGG2 GND 14525-004 VDD1, VDD2 Figure 4. VDD1, VDD2 Interface Schematic Figure 7. GND Interface Schematic 14525-005 RFOUT ESD 14525-007 Figure 6. VGG1, VGG2 Interface Schematic Figure 3. RFIN Interface Schematic Figure 5. RFOUT Interface Schematic Rev. D | Page 5 of 13 HMC902 Data Sheet 25 25 15 23 5 21 GAIN (dB) -5 -15 19 5 3 9 7 11 13 FREQUENCY (GHz) 15 -15 -20 -25 9 10 11 -10 -15 -20 7 8 9 10 11 6 -30 8 9 10 11 35 30 OUTPUT IP3 (dBm) 3 2 1 25 20 15 6 7 8 9 10 11 FREQUENCY (GHz) 14525-010 10 5 7 Figure 12. Output Return Loss vs. Frequency at Various Temperatures 4 4 6 FREQUENCY (GHz) +85C +25C -55C 5 5 14525-012 6 5 14525-009 4 Figure 9. Input Return Loss vs. Frequency at Various Temperatures NOISE FIGURE (dB) 8 -25 FREQUENCY (GHz) 0 7 +85C +25C -40C -5 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) 0 -10 -30 6 Figure 11. Gain vs. Frequency at Various Temperatures +85C +25C -55C -5 5 FREQUENCY (GHz) Figure 8. Broadband Gain and Return Loss vs. Frequency 0 4 14525-011 17 S11 S21 S22 14525-008 -25 +85C +25C -55C 5 +85C +25C -40C 5 6 7 8 9 10 FREQUENCY (GHz) Figure 13. Output IP3 vs. Frequency at Various Temperatures Figure 10. Noise Figure vs. Frequency at Various Temperatures Rev. D | Page 6 of 13 14525-013 BROADBAND GAIN AND RETURN LOSS (dB) TYPICAL PERFORMANCE CHARACTERISTICS Data Sheet 24 +85C +25C -55C 20 POUT (dBm), GAIN (dB), PAE (%) 10 5 4 5 6 7 8 9 10 11 Figure 14. P1dB vs. Frequency at Various Temperatures 0 -20 -30 -40 6 7 9 8 10 11 FREQUENCY (GHz) Figure 15. Reverse Isolation vs. Frequency at Various Temperatures 25 15 10 8 9 10 FREQUENCY (GHz) 11 14525-016 5 7 -6 -3 0 3 20 6 18 5 16 4 14 3 12 2 P1dB GAIN NOISE FIGURE 1 3.5 0 4.0 VDD (V) 20 6 -9 Figure 18. Gain, P1dB, and Noise Figure vs. Supply Voltage (VDD) at 7 GHz +85C +25C -55C 5 -12 7 8 3.0 14525-015 5 -15 22 10 4 -18 Figure 17. POUT, Gain, and Power Added Efficiency (PAE) vs. Input Power at 7 GHz -50 PSAT (dBm) POUT GAIN PAE INPUT POWER (dBm) GAIN (dB), P1dB (dBm) REVERSE ISOLATION (dB) -4 -21 +85C +25C -55C -10 0 4 0 FREQUENCY (GHz) -60 8 14525-014 0 12 14525-017 15 16 NOISE FIGURE (dB) P1dB (dBm) 20 Figure 16. PSAT vs. Frequency at Various Temperatures Rev. D | Page 7 of 13 14525-018 25 HMC902 HMC902 Data Sheet THEORY OF OPERATION The HMC902 is GaAs, pHEMT, MMIC, low noise amplifier. The HMC902 amplifier uses two gain stages in series. The basic schematic for the amplifier is shown in Figure 19, which forms a low noise amplifier operating from 5 GHz to 11 GHz with excellent noise figure performance. VDD1 VDD2 The HMC902 has single-ended input and output ports with impedances nominally equaling 50 over the 5 GHz to 11 GHz frequency range. Consequently, the device can be directly inserted into a 50 system with no required impedance matching circuitry, meaning multiple HMC902 amplifiers can be cascaded back to back without the need for external matching circuitry. The input and output impedances are sufficiently stable vs. variations in temperature and supply voltage so no impedance matching compensation is required. RFIN VGG1 VGG2 14525-019 RFOUT It is critical to supply very low inductance ground connections to the exposed pad to ensure stable operation. To achieve optimal performance from the HMC902 and to prevent damage to the device, do not exceed the absolute maximum ratings. Figure 19. Basic Schematic for the HMC902 Rev. D | Page 8 of 13 Data Sheet HMC902 APPLICATIONS INFORMATION The HMC902 has VGG1 and VGG2 optional gate bias pads. When these pads are left open, the amplifier runs in self biased operation with typical IDQ = 80 mA. Figure 25 shows the basic connections for operating the HMC902 in self biased operation mode. Both the RFIN and the RFOUT ports of the HMC902 have on-chip dc block capacitors, which eliminates the need for external ac coupling capacitors. When using the VGG1 and the VGG2 gate bias pads, follow bias sequencing to prevent damage to the amplifier. The recommended bias sequence during power-up is as follows: 1. 2. 3. 4. 5. Connect to GND. Set VGG1 to -0.8 V. Set VDD1 and VDD2 to 3.5 V. Increase VGG1 to achieve typical IDQ = 80 mA. Apply the RF signal. The recommended bias sequence during power-down is as follows: 1. 2. 3. 4. Turn off the RF signal. Decrease VGG1 to -0.8 V to achieve typical IDQ = 0 mA. Decrease VDD1 and VDD2 to 0 V. Increase VGG1 to 0 V. The bias conditions previously listed (VDD1 and VDD2 = 3.5 V and IDQ = 80 mA) are the recommended operating points to achieve optimum performance. The data used in this data sheet is taken with the recommended bias conditions listed in the Electrical Specifications section. If the HMC902 is used with different bias conditions than what is recommended, a different performance than what is shown in the Typical Performance Characteristics section can result. Decreasing the VDD level has a negligible effect on gain and NF performance, but reduces P1dB. This behavior is seen in Figure 18. For applications where the P1dB requirement is not stringent, the HMC902 can be down biased to reduce power consumption. Rev. D | Page 9 of 13 HMC902 Data Sheet MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS The die is attached directly to the ground plane eutectically or with conductive epoxy (see the General Handling section, the Mounting section, and the Wire Bonding section). The 50 microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the HMC902 (see Figure 20). When using 0.254 mm (10 mil) thick alumina thin film substrates, the die is raised 0.150 mm (6 mil) so the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102 mm (4 mil) thick die to a 0.150 mm (6 mil) thick molybdenum heat spreader (moly tab), which then attaches to the ground plane (see Figure 21). WIRE BOND Follow ESD precautions to protect against ESD strikes. Transients 14525-020 The HMC902 is back metallized and can be die mounted with gold tin (AuSn) eutectic preforms or with electrically conductive epoxy. The mounting surface must be clean and flat. Eutectic Die Attach WIRE BOND An 80% gold/20% tin preform is recommended with a work surface temperature of 255C and a tool temperature of 265C. When hot 90% nitrogen/10% hydrogen gas is applied, the tool tip temperature is 290C. Do not expose the chip to a temperature greater than 320C for more than 20 sec. No more than 3 sec of scrubbing is required for attachment. 14525-021 RF GROUND PLANE 0.254mm (0.010") THICK ALUMINA THIN FILM SUBSTRATE Static Sensitivity Mounting 0.102mm (0.004") THICK GaAs MMIC 0.150mm (0.006") THICK MOLY TAB Handle the chips in a clean environment. Do not attempt to clean the chip using liquid cleaning systems. Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the HMC902 has fragile air bridges and must not be touched with the vacuum collet, tweezers, or fingers. Figure 20. Routing RF Signal 0.076mm (0.003") Cleanliness General Handling RF GROUND PLANE 0.127mm (0.005") THICK ALUMINA THIN FILM SUBSTRATE All bare die are placed in either waffle or gel-based ESD protective containers and then sealed in an ESD protective bag for shipment. After opening the sealed ESD protective bag, store all die in a dry nitrogen environment. Suppress instrument and bias supply transients while bias is applied. Use the shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004") THICK GaAs MMIC 0.076mm (0.003") Storage Epoxy Die Attach Figure 21. Routing RF Signal with Moly Tab Microstrip substrates are placed as close to the die as possible to minimize bond wire length. Typical die to substrate spacing is 0.076 mm to 0.152 mm (3 mil to 6 mil). HANDLING PRECAUTIONS Follow the precautions detailed in the following sections to avoid permanent damage to the device. Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the HMC902 after it is placed into position. Cure epoxy per the schedule of the manufacturer. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds are thermosonically bonded with a force of 40 g to 60 g. DC bonds of 0.001 in (0.025 mm) diameter, thermosonically bonded, are recommended. Create ball bonds with a force of 40 g to 50 g and wedge bonds at 18 g to 22 g. Create bonds with a nominal stage temperature of 150C. A minimum amount of ultrasonic energy is applied to achieve reliable bonds. All bonds are as short as possible, less than 12 mil (0.31 mm). Rev. D | Page 10 of 13 Data Sheet HMC902 TYPICAL APPLICATION CIRCUITS VDD1 VDD2 0.01F 100pF 100pF 2 RFIN 0.01F 4.7F 3 RFOUT 4 1 5 6 VGG2 VGG1 4.7F 0.01F 100pF 100pF 0.01F 4.7F 14525-024 4.7F Figure 22. Typical Application Circuit with Gate Control Option VDD1 VDD2 4.7F 0.01F 100pF 100pF 2 1 4.7F 3 4 RFOUT 14525-025 RFIN 0.01F Figure 23. Typical Application Circuit with Self Biased Option Rev. D | Page 11 of 13 HMC902 Data Sheet ASSEMBLY DIAGRAMS + 4.7F + 0.01F 0.01F TO VDD1 SUPPLY 4.7F 100pF 100pF VDD2 VDD1 TO VDD2 SUPPLY ALL BOND WIRES ARE 1mil DIAMETER RFIN TO VGG1 SUPPLY + RFOUT 3mil NOMINAL GAP VGG2 VGG1 100pF 100pF 0.01F TO VGG2 SUPPLY + 0.01F 4.7F 4.7F 14525-022 50 TRANSMISSION LINE Figure 24. Assembly Diagram with Gate Control Option + 4.7F + 0.01F TO VDD1 SUPPLY 4.7F 0.01F 100pF 100pF VDD1 VDD2 TO VDD2 SUPPLY ALL BOND WIRES ARE 1mil DIAMETER RFIN RFOUT VGG1 VGG2 3mil NOMINAL GAP Figure 25. Assembly Diagram with Self Biased Option Rev. D | Page 12 of 13 14525-023 50 TRANSMISSION LINE Data Sheet HMC902 OUTLINE DIMENSIONS 1.330 0.102 0.450 0.300 0.335 *AIRBRIDGE AREA 3 2 0.326 1.040 1 4 0.197 0.200 0.264 6 2010 5 0.193 0.07 0.161 0.404 0.513 SIDE VIEW 0.112 *This die utilizes fragile air bridges. Any pickup tools used must not contact this area. 08-29-2016-A 0.126 TOP VIEW Figure 26. 6-Pad Bare Die [CHIP] (C-6-9) Dimensions shown in millimeters ORDERING GUIDE Model 1 HMC902 HMC902-SX 1 Temperature Range -55C to +85C -55C to +85C Package Description 6-Pad Bare Die [CHIP] 6-Pad Bare Die [CHIP] The HMC902-SX is a sample order of two devices. (c)2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D14525-0-1/18(D) Rev. D | Page 13 of 13 Package Option C-6-9 C-6-9 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Analog Devices Inc.: HMC902 HMC902-SX