DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG505; BFG505/X NPN 9 GHz wideband transistors Product specification Supersedes data of September 1995 1998 Oct 02 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X FEATURES PINNING * High power gain DESCRIPTION PIN * Low noise figure BFG505 * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS BFG505/X 1 collector collector 2 base emitter 3 emitter base 4 emitter emitter RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). handbook, 2 columns 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. 1 MARKING 2 Top view TYPE NUMBER MSB014 CODE BFG505 N33 BFG505/X N39 Fig.1 Simplified outline SOT143B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS open emitter MIN. TYP. MAX. UNIT - - 20 V - - 15 V VCBO collector-base voltage VCES collector-emitter voltage RBE = 0 IC collector current (DC) - - 18 mA Ptot total power dissipation Ts 130 C - - 150 mW hFE DC current gain VCE = 6 V; IC = 5 mA 60 120 250 Cre feedback capacitance VCB = 6 V; IC = ic = 0; f = 1 MHz - 0.2 - fT transition frequency VCE = 6 V; IC = 5 mA; f = 1 GHz - 9 - GHz GUM maximum unilateral power gain VCE = 6 V; IC = 5 mA; Tamb = 25 C; f = 900 MHz - 20 - dB VCE = 6 V; IC = 5 mA; Tamb = 25 C; f = 2 GHz - 13 - dB pF S212 insertion power gain VCE = 6 V; Ic = 5 mA; Tamb = 25 C; f = 900 MHz 16 17 - dB F noise figure s = opt; VCE = 6 V; Ic = 1.25 mA; Tamb = 25 C; f = 900 MHz - 1.2 1.7 dB s = opt; VCE = 6 V; Ic = 5 mA; Tamb = 25 C; f = 900 MHz - 1.6 2.1 dB s = opt; VCE = 6 V; Ic = 1.25 mA; Tamb = 25 C; f = 2 GHz - 1.9 - dB 1998 Oct 02 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 20 V VCES collector-emitter voltage RBE = 0 - 15 V VEBO emitter-base voltage open collector - 2.5 V IC collector current (DC) - 18 mA Ptot total power dissipation Ts 130 C; see Fig.2; note 1 - 150 mW Tstg storage temperature range -65 150 C Tj junction temperature - 175 C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. MRA638-1 200 handbook, halfpage Ptot (mW) 150 100 50 0 0 50 100 150 200 Ts (C) Fig.2 Power derating curve. 1998 Oct 02 3 VALUE UNIT 290 K/W Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - TYP. - MAX. 50 UNIT ICBO collector cut-off current VCB = 6 V; IE = 0 nA hFE DC current gain IC = 5 mA; VCE = 6 V; see Fig.3 60 120 250 Ce emitter capacitance IC = ic = 0 VEB = 0.5 V; f = 1 MHz - 0.4 - pF Cc collector capacitance VCB = 6 V; IE = ie = 0; f = 1 MHz - 0.3 - pF Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4 - 0.2 - pF fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz; see Fig.5 - 9 - GHz GUM maximum unilateral power gain; note 1 IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz - 20 - dB Ic = 5 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz - 13 - dB S212 insertion power gain Ic = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz 16 17 - dB F noise figure s = opt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz - 1.2 1.7 dB s = opt; IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz - 1.6 2.1 dB s = opt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz - 1.9 - dB PL1 output power at 1 dB gain compression IC = 5 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; f = 900 MHz - 4 - dBm ITO third order intercept point note 2 - 10 - dBm Notes S 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 - S 11 2 ) ( 1 - S 22 2 ) 2. VCE = 6 V; IC = 5 mA; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at 2fp - fq = 898 MHz and 2fq - fp = 904 MHz. 1998 Oct 02 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X MRA639 250 MRA640 0.4 handbook, halfpage handbook, halfpage hFE Cre (pF) 200 0.3 150 0.2 100 0.1 50 0 10-3 10-2 10-1 1 10 0 102 IC (mA) 0 4 6 8 10 VCB (V) IC = 0; f = 1 MHz. VCE = 6 V. Fig.3 2 DC current gain as a function of collector current. Fig.4 MRA641 12 Feedback capacitance as a function of collector-base voltage. MRA642 25 handbook, halfpage handbook, halfpage fT gain (dB) VCE = 6 V (GHz) GUM 20 VCE = 3 V 8 MSG 15 10 4 5 0 10-1 1 10 IC (mA) 0 102 0 1998 Oct 02 8 12 IC (mA) VCE = 6 V; f = 900 MHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Tamb = 25 C; f = 1 GHz. Fig.5 4 Transition frequency as a function of collector current. Fig.6 Gain as a function of collector current. 5 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X MRA643 25 MRA644 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 20 40 MSG Gmax 15 GUM 30 MSG GUM 10 20 5 10 0 0 4 8 0 10 12 IC (mA) VCE = 6 V; f = 2 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. 103 MRA645 MRA650 5 50 handbook, halfpage Fmin GUM f = 900 MHz (dB) 4 40 1000 MHz MSG 30 3 20 2 Gmax 10 102 103 f (MHz) 1 0 10-1 104 VCE = 6 V; IC = 5 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Gass 20 Gass (dB) 15 2000 MHz 10 5 2000 MHz Fmin 1000 MHz 900 MHz 500 MHz 0 1 IC (mA) -5 10 VCE = 6 V. Fig.10 Minimum noise figure and associated available gain as functions of collector current. Fig.9 Gain as a function of frequency. 1998 Oct 02 104 Fig.8 Gain as a function of frequency. handbook, halfpage 0 10 f (MHz) VCE = 6 V; IC = 1.25 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.7 Gain as a function of collector current. gain (dB) 102 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistors MRA651 5 andbook, halfpageIC = 1.25 mA 5 mA Fmin (dB) 4 20 Gass (dB) 15 Gass 3 10 2 5 5 mA 1 BFG505; BFG505/X Fmin 0 1.25 mA 0 102 103 -5 104 f (MHz) VCE = 6 V. Fig.11 Minimum noise figure and associated available gain as functions of frequency. pot. unst. region handbook, full pagewidth 90 1.0 1 135 2 0.5 0.8 45 0.6 stability 0.2 circle 180 Fmin = 1. 2 dB 0.2 0 0.5 1 0.4 5 OPT F = 1.5 dB 2 5 0.2 0 0 F = 2 dB F = 3 dB 0.2 -135 0.5 5 2 -45 1 MRA652 Zo = 50 . VCE = 6 V; Ic = 1.25 mA; f = 900 MHz. -90 Fig.12 Noise circle figure. 1998 Oct 02 7 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X handbook, full pagewidth 90 pot. unst. region 1.0 1 135 0.8 45 2 0.5 0.6 OPT 0.2 stability circle 180 0.4 5 Fmin = 1. 9 dB 0.2 0.2 0 0.5 F = 2.5 dB 1 2 5 0 0 F = 3 dB F = 4 dB 5 0.2 -135 0.5 2 -45 1 MRA653 -90 Zo = 50 . VCE = 6 V; Ic = 1.25 mA; f = 2000 MHz. Fig.13 Noise circle figure. 1998 Oct 02 8 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X 90 handbook, full pagewidth 1.0 1 135 0.8 45 2 0.5 0.6 0.2 0.4 5 0.2 3 GHz 180 0.2 0 0.5 1 2 5 0 0 40 MHz 5 0.2 0.5 -135 2 -45 1 MRA646 -90 VCE = 6 V; IC = 5 mA. Zo = 50 . Fig.14 Common emitter input reflection coefficient (S11). 90 handbook, full pagewidth 135 45 3 GHz 40 MHz 180 15 12 9 6 0 3 -135 -45 -90 MRA647 VCE = 6 V; IC = 5 mA. Fig.15 Common emitter forward transmission coefficient (S21). 1998 Oct 02 9 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X 90 handbook, full pagewidth 135 45 3 GHz 40 MHz 180 0.25 0.20 0.15 0.10 0 0.05 -135 -45 -90 MRA648 VCE = 6 V; IC = 5 mA. Fig.16 Common emitter reverse transmission coefficient (S12). 90 handbook, full pagewidth 1.0 1 135 0.8 45 2 0.5 0.6 0.2 0.4 5 0.2 180 0.2 0 0.5 1 2 5 0 40 MHz 0 5 0.2 3 GHz -135 0.5 2 -45 1 MRA649 VCE = 6 V; IC = 5 mA. Zo = 50 . -90 Fig.17 Common emitter output reflection coefficient (S22). 1998 Oct 02 10 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 1998 Oct 02 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Oct 02 12 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X NOTES 1998 Oct 02 13 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X NOTES 1998 Oct 02 14 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X NOTES 1998 Oct 02 15 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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