APTGF300U60D4
APTGF300U60D4 – Rev 0 January, 2005
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Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 600 V
TC = 25°C 375
IC Continuous Collector Current TC = 80°C 300
ICM Pulsed Collector Current TC = 25°C 600
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 1130 W
RBSOA Reverse Bias Safe Operation Area Tj = 125°C 600A@520V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
3
5
2
1
53
4
12
VCES = 600V
IC = 300A @ Tc = 80°C
Applicatio
n
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) fast IGBT
- Low voltage drop
- Low tail current
- Switching freque nc y up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
- M6 connectors for power
- M4 connectors for signal
• High level of integration
Benefits
• Outstandi ng perfor mance at hi gh freque ncy
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
Single switch
N
P
T IGBT Power Module
APTGF300U60D4
APTGF300U60D4 – Rev 0 January, 2005
APT website
–
http:/
/
www.advancedpower.com 2 - 3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 1 500 µA
ICES Zero Gate Voltage Collector Current VGE = 0V
VCE = 600V Tj = 125°C 1 mA
Tj = 25°C 1.95 2.45
VCE(on) Collector Emitter on Voltage VGE = 15V
IC = 300A Tj = 125°C 2.2 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 6mA 4.5 5.5 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 13
Cres Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz 1.2 nF
Td(on) Tur n-o n Delay Ti me 100
Tr Rise Time 68
Td(off) Turn-off Delay Time 320
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 300A
RG = 3.3Ω 45
ns
Td(on) Tur n-o n Delay Ti me 105
Tr Rise Time 70
Td(off) Turn-off Delay Time 350
Tf Fall Time 50
ns
Eon Turn on Energy 7
Eoff Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 300A
RG = 3.3Ω
11 mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 1.25 1.6
VF Diode Forward Voltage IF = 300A
VGE = 0V Tj = 125°C 1.2 V
ER Reverse Recovery Energy Tj = 125°C 7 mJ
Tj = 25°C 19
Qrr Reverse Recovery Charge
IF = 300A
VR = 300V
di/dt =4000A/µs Tj = 125°C 34 µC
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.11
RthJC Junction to Case Diode 0.21 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
°C
M6 3 5
Torque Mounting torque M4 1 2
N.m
Wt Package Weight 420 g
APTGF300U60D4
APTGF300U60D4 – Rev 0 January, 2005
APT website
–
http:/
/
www.advancedpower.com 3 - 3
Package outline
APT re s erves the rig ht to c ha nge , without notice , the s pe cificatio ns and i nfo rmatio n co nta ine d he rein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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