HEXFET® Power MOSFET
PD- 93766
This new series of low charge HEXFET® power MOSFETs
achieve significant lower gate charge over conventional
MOSFETs. Utilizing the new LCDMOS (low charge
device MOSFETs) technology, the device improvements
are achieved without added product cost, allowing for
reduce gate drive requirements and total system savings.
In addition, reduced switching losses and improved
efficiency and achievable in a variety of high frequency
applications. Frequencies of a few MHz at high current
are possible using the new low charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that characterize of HEXFET
power MOSFETs offer the designer a new power
transistor standard for switching applications.
S
D
G
VDSS = 500V
RDS(on) = 0.85Ω
ID = 8.0A
lUltra Low Gate Charge
lReduced Gate Drive Requirement
lEnhanced 30V VGS Rating
lReduced CISS, COSS, C RSS
lExtremely High Frequency Operation
lRepetitive Avalanche Rated
Description
1/3/2000
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.0
RθJA Junction-to-Ambient (PCB Mounted,steady-state)** ––– 40
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V8.0
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V5.1 A
IDM Pulsed Drain Current 28
PD @TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ± 30 V
EAS Single Pulse Avalanche Energy‚510 mJ
IAR Avalanche Current8.0 A
EAR Repetitive Avalanche Energy13 mJ
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case) °C
Absolute Maximum Ratings
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IRF840LCS
IRF840LCL
D2Pak
IRF840LCS TO-262
IRF840LCL
IRF840LCS/LCL
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Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V
trr Reverse Recovery Time ––– 490 740 ns TJ = 25°C, IF = 8.0A
Qrr Reverse Recovery Charge ––– 3.0 4.5 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Starting TJ = 25°C, L = 14mH
RG = 25Ω, IAS = 8.0A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
ISD ≤ 8.0A, di/dt ≤ 100A/µs, VDD ≤ V (BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF840LC data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended soldering techniques refer to application note #AN-994.
S
D
G
Source-Drain Ratings and Characteristics
8.0
28 A
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.63 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.85 ΩVGS = 10V, ID = 4.8A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 4.0 ––– ––– S VDS = 50V, ID = 4.8A
––– ––– 25 µA VDS = 500V , VGS = 0V
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 39 ID = 8.0A
Qgs Gate-to-Source Charge ––– ––– 10 nC VDS = 400V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 19 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 250V
trRise Time ––– 25 ––– ID = 8.0A
td(off) Turn-Off Delay Time ––– 27 ––– RG = 9.1Ω
tfFall Time ––– 19 ––– RD = 30Ω, See Fig. 10
Between lead,
––– ––– and center of die contact
Ciss Input Capacitance ––– 1100 ––– VGS = 0V
Coss Output Capacitance ––– 170 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 18 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS Drain-to-Source Leakage Current
nH
7.5
LSInternal Source Inductance
IRF840LCS/LCL
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRF840LCS/LCL
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRF840LCS/LCL
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Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF840LCS/LCL
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
IRF840LCS/LCL
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Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF840LCS/LCL
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D2Pak Package Outline
D2Pak Part Marking Information
10.16 (.400)
R EF .
6.47 (.255)
6.18 (.243)
2.61 (.1 03 )
2.32 (.0 91 )
8.89 (.350)
REF .
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5 .28 (.20 8)
4 .78 (.18 8)
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15 .4 9 (.610)
14 .7 3 (.580)
3X 0.93 (.037)
0.69 (.027)
5 .08 (.20 0)
3X 1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MAX.
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0.2 5 ( .0 10 ) M B A M MINIMUM RECOM MENDED FOOTPRINT
11.43 (.450)
8.89 (.350 )
17 .78 (.70 0)
3.81 (.150)
2. 08 (.082)
2X
LEAD ASSIGNMENTS
1 - G AT E
2 - D RA IN
3 - SOURCE
2.54 (.100)
2X
PAR T NUM B ER
INTERNATIONAL
RE CTIFIE R
L O G O DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
A S SEMBLY
LO T C O D E
F530S
9B 1 M
9246
A
IRF840LCS/LCL
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TO-262 Package Outline
TO-262 Part Marking Information
IRF840LCS/LCL
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D2Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.07 3)
1.65 (.06 5)
1.60 (.063)
1.50 (.059)
4.10 (.16 1)
3.90 (.15 3)
TRL
FE ED D IRE CTIO N
10 .9 0 (.429)
10 .7 0 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.3 68 (.0145)
0.3 42 (.0135)
1 .60 (.063)
1 .50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
2 7.40 ( 1.079)
2 3.90 ( .941)
60.00 (2.3 62)
MIN .
3 0.40 (1.197)
M A X .
26.4 0 (1.0 39)
24 .40 ( .961 )
NOT ES :
1. COM FO R M S TO EIA -418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIM ENSIO N MEASUR ED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 1/2000
