NPT25015
NDS-004 Rev 4, April 2013NPT25015 Page 1
FEATURES
• Optimized for CW, pulsed, WiMAX, and other
applications from DC - 3000 MHz
• 23W P3dB peak envelope power (PEP)
• 1.5W linear power @ 2% EVM for single carrier
OFDM, 10.3dB peak/average,
3.5MHz channel bandwidth, 14dB gain,
23.5% efficiency, 2500-2700MHz
• 100% RF tested
• Thermally-enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to EAR99 export control
DC - 3000 MHz
23 Watt, 28 Volt
GaN HEMT
Gallium Nitride 28V, 23W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Typical 2-Tone Performance: VDS = 28V, IDQ = 200mA, Frequency = 2500MHz, Tone Spacing = 1.0MHz, TC = 25°C
Measured in Nitronex Test Fixture
Symbol Parameter Min Typ Max Units
P3dB,PEP Peak Envelope Power at 3dB Compression 20 25 - W
P1dB,PEP Peak Envelope Power at 1dB Compression - 15 - W
GSS Small Signal Gain 13.0 14.0 15.0 dB
hDrainEfciencyat3dBCompression 53 58 - %
Typical OFDM Performance: VDS = 28V, IDQ = 200mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst,
continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF. Frequency =
2500 - 2700MHz. POUT, AVG = 1.5W, TC = 25°C. Measured in Load Pull System (Refer to Table 1 and Figure 1)
Symbol Parameter Typ Units
GPPower Gain 14.0 dB
hDrainEfciency 23.5 %
EVM Error Vector Magnitude 2.0 %
NPT25015
NDS-004 Rev 4, April 2013NPT25015 Page 2
Symbol Parameter Min Typ Max Units
Off Characteristics
VBDS
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 8mA) 100 - - V
IDLK
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V) - - 4 mA
On Characteristics
VT
Gate Threshold Voltage
(VDS = 28V, ID = 8mA) -2.3 -1.8 -1.3 V
VGSQ
Gate Quiescent Voltage
(VDS = 28V, ID = 200mA) -2.0 -1.5 -1.0 V
RON
On Resistance
(VGS = 2V, ID = 60mA) -0.45 0.50 W
ID,MAX
Drain Current
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle)
-5.0 - A
DC Specications: TC = 25°C
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol Parameter Max Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage -10 to 3 V
PTTotal Device Power Dissipation (Derated above 25°C) 28 W
qJC Thermal Resistance (Junction-to-Case) 6.25 °C/W
TSTG Storage Temperature Range -65 to 150 °C
TJOperating Junction Temperature 200 °C
HBM Human Body Model ESD Rating (per JESD22-A114) 1A (>250V)
MM Machine Model ESD Rating (per JESD22-A115) M1 (>50V)
MSL Moisture Sensitivity Level (Per IPC/JEDEC J-STD-20) @ 260°C Peak
Package Temperature 3
NPT25015
NDS-004 Rev 4, April 2013NPT25015 Page 3
Table 1: Optimum Impedance Characteristics for Linear OFDM Tuning, single carrier OFDM waveform 64-QAM 3/4, 8
burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF
ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
Frequency (MHz) ZS (W) ZL (W) POUT (W) Gain (dB) Drain
Efciency (%)
2500 5.2 - j 1.6 3.3 + j 1.7 1.5 14.5 25
2600 4.6 - j 1.9 3.1 + j 2.7 1.5 14.5 25
2700 4.0 - j 2.2 2.9 + j 4.3 1.5 14.4 24
Figure 1 - Optimum Impedance Characteristics for OFDM Tuning, VDS = 28V, IDQ = 200mA
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=200mA, TA=25°C unless otherwise noted
Table 2: Optimum Impedance Characteristics for CW PSAT,Efciency,andGain
Frequency (MHz) ZS (W) ZL (W) PSAT (W) GSS (dB) Drain
Efciency (%)
2500 3.7 - j 4.7 6.9 - j 1.2 23 14.5 60
NPT25015
NDS-004 Rev 4, April 2013NPT25015 Page 4
Figure 2 - Typical OFDM Performance
at 2500MHz and 28V versus IDQ
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=200mA, TA=25°C unless otherwise noted
Figure 3 - P3dB,PEPandDrainEfciency
versus Temperature at 2500MHz, Application Board
Figure 4 - Power Derating Curve Figure 5 - MTTF of NRF1 devices as a
function of junction temperature
Typical Device Characteristics
VDS=28V, IDQ=200mA, TA=25°C unless otherwise noted
NPT25015
NDS-004 Rev 4, April 2013NPT25015 Page 5
Figure 6 - APP-NPT25015-25 Demonstration Board and Schematic
RFIN RFOUT
VGS VDS
APP-NPT25015-25, 2500-2700MHz Linear WiMAX Application Board
802.16eSingleCarrierOFDM,64-QAM3/4,8-burst,20msframe75%lled,10MHzchannelbandwidth,PAR=10.3dB@0.01%CCDF
Detailed design information and data available at www.nitronex.com
Name Value Tolerance Vendor Vendor Number
C1 5.6pF +/- 0.1pF ATC ATC600F5R6B
C2 2.2pF +/- 0.1pF ATC ATC600F2R 2B
C3 3.3pF +/- 0.1pF ATC ATC600F3R3B
C4, C9 1.0uF 10% Panasonic ECJ-5YB2A105M
C5, C8 0.1uF 10% Kemet C1206C104K1RACTU
C6, C7 0.01uF 10% AVX 120 61C103K AT 2A
C10 150uF 20% Nichicon UPW1C151MED
C11 270uF 20% United Chemi-Con ELXY630ELL271MK25S
C12 1.0pF +/- 0.1pF ATC ATC600F1R0B
C13, C15 33pF 5% ATC ATC600F330B
C14, C16 1000pF 10% Kemet C0805C102K1RACTU
PA1 -- -- -- NPT25015D
R1 49.9 ohm 1% Panasonic ERJ-2RKF49R9X
R3 0.33 ohm 1% Panasonic ERJ-6RQFR33V
-- -- -- -- Coin to mount PA1
Substrate Rogers R04350, t = 30mil er = 3.5
Table 2: APP-NPT25015-25 Demonstration Board Bill of Materials
NPT25015
NDS-004 Rev 4, April 2013NPT25015 Page 6
Figure 7 - Gain,Efciency,EVMat2500MHz Figure 8 - Gain,Efciency,EVMat2600MHz
Figure 9 - Gain,Efciency,EVMat2700MHz
0
5
10
15
20
25
30
35
40
23 25 27 29 31 33 35 37 39
Pout (dBm)
Gain (dB), Drain Efficiency (%)
0
1
2
3
4
5
6
7
8
EVM (%)
Gain
DE
EVM (%)
0
5
10
15
20
25
30
35
40
23 25 27 29 31 33 35 37 39
Pout (dBm)
Gain (dB), Drain Efficiency (%)
0
1
2
3
4
5
6
7
8
EVM (%)
Gain
DE
EVM (%)
0
5
10
15
20
25
30
35
40
23 25 27 29 31 33 35 37 39
Gain (dB), Drain Efficiency (%)
0
1
2
3
4
5
6
7
8
EVM (%)
Gain
DE
EVM (%)
APP-NPT25015-25, 2500-2700MHz Linear WiMAX Application Board
802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, continuous frame data, 10MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF
Detailed design information and data available at www.nitronex.com
NPT25015
NDS-004 Rev 4, April 2013NPT25015 Page 7
Figure 10 - D Package Dimensions and Pinout
1 2 3 4
8 6 57
9
Chamfer
1. NC
2. Gate
3. Gate
4. NC
7. Drain
6. Drain
5. NC
8. NC
9. Source Pad
(Bottom)
EBD
C
A
f
(6X)
F
(8X)
G1
SEATING
PLANE
G
m
SEATING PLANE
L
H
A/2
D/2
.150
Solder Paste
.080" X .120"
(Typ)
Solder Paste
.020" X .040"
(8X Typ)
.100
.105
.176.145.140
Heat Sink
Pedestal
PWB Cutout
R.016 (4X Typ)
.055
.180
.030
PWB Pad
(8X Typ)
Solder Mask
.005" Relief
(Typ)
Figure 11 - Mounting Footprint
Ordering Information
Part Number Order Multiple Description
NPT25015DT 97 Tube; NPT25015 in D (PSOP2) Package
NPT25015DR 1500 Tape and Reel; NPT25015 in D (PSOP2) Package
Inches Millimeters
Dim Min Max Min Max
A0.189 0.19 6 4.80 4.98
B0.150 0.157 3.81 3.99
C0.107 0.123 2.72 3.12
D0.071 0.870 1.80 22.1
E0.230 0.244 5.84 6.19
f0.050 BSC 1.270 BSC
F0.0138 0.0192 0.35 0.49
G0.055 0.061 1.40 1.55
G1 0.000 0.004 0.00 0.10
H0.075 0.098 1.91 2.50
L0.016 0.035 0.41 0.89
m 0° 8° 0° 8°
1:TondaNitronexcontactinyourarea,visitourwebsiteathttp://www.nitronex.com
1. Gate
2. Gate
3. Gate
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
9. Source Pad
(Bottom)
NPT25015
NDS-004 Rev 4, April 2013NPT25015 Page 8
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
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(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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