NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC(R) NRF1 process - A proprietary GaN-on-Silicon technology FEATURES * Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz * 23W P3dB peak envelope power (PEP) * 1.5W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 3.5MHz channel bandwidth, 14dB gain, 23.5% efficiency, 2500-2700MHz * 100% RF tested * Thermally-enhanced industry standard package * High reliability gold metallization process * Lead-free and RoHS compliant * Subject to EAR99 export control DC - 3000 MHz 23 Watt, 28 Volt GaN HEMT Typical 2-Tone Performance: VDS = 28V, IDQ = 200mA, Frequency = 2500MHz, Tone Spacing = 1.0MHz, TC = 25C Measured in Nitronex Test Fixture Symbol Parameter Min Typ Max Units P3dB,PEP Peak Envelope Power at 3dB Compression 20 25 - W P1dB,PEP Peak Envelope Power at 1dB Compression - 15 - W 13.0 14.0 15.0 dB 53 58 - % GSS h Small Signal Gain Drain Efficiency at 3dB Compression Typical OFDM Performance: VDS = 28V, IDQ = 200mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF. Frequency = 2500 - 2700MHz. POUT,AVG = 1.5W, TC = 25C. Measured in Load Pull System (Refer to Table 1 and Figure 1) Symbol GP h EVM NPT25015 Parameter Typ Units Power Gain 14.0 dB Drain Efficiency 23.5 % Error Vector Magnitude 2.0 % Page 1 NDS-004 Rev 4, April 2013 NPT25015 DC Specifications: TC = 25C Symbol Parameter Min Typ Max Units 100 - - V - - 4 mA Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS = -8V, ID = 8mA) IDLK Drain-Source Leakage Current (VGS = -8V, VDS = 60V) On Characteristics VT Gate Threshold Voltage (VDS = 28V, ID = 8mA) -2.3 -1.8 -1.3 V VGSQ Gate Quiescent Voltage (VDS = 28V, ID = 200mA) -2.0 -1.5 -1.0 V RON On Resistance (VGS = 2V, ID = 60mA) - 0.45 0.50 W Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2% duty cycle) - 5.0 - A ID,MAX Absolute Maximum Ratings: Not simultaneous, TC = 25C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V PT Total Device Power Dissipation (Derated above 25C) qJC Thermal Resistance (Junction-to-Case) TSTG TJ Storage Temperature Range Operating Junction Temperature 28 W 6.25 C/W -65 to 150 C 200 C HBM Human Body Model ESD Rating (per JESD22-A114) 1A (>250V) MM Machine Model ESD Rating (per JESD22-A115) M1 (>50V) MSL Moisture Sensitivity Level (Per IPC/JEDEC J-STD-20) @ 260C Peak Package Temperature NPT25015 Page 2 3 NDS-004 Rev 4, April 2013 NPT25015 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =200mA, TA=25C unless otherwise noted Table 1: Optimum Impedance Characteristics for Linear OFDM Tuning, single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF Frequency (MHz) ZS (W) ZL (W) POUT (W) Gain (dB) Drain Efficiency (%) 2500 5.2 - j 1.6 3.3 + j 1.7 1.5 14.5 25 2600 4.6 - j 1.9 3.1 + j 2.7 1.5 14.5 25 2700 4.0 - j 2.2 2.9 + j 4.3 1.5 14.4 24 Table 2: Optimum Impedance Characteristics for CW PSAT, Efficiency, and Gain Frequency (MHz) ZS (W) ZL (W) PSAT (W) GSS (dB) Drain Efficiency (%) 2500 3.7 - j 4.7 6.9 - j 1.2 23 14.5 60 ZS is the source impedance presented to the device. ZL is the load impedance presented to the device. Figure 1 - Optimum Impedance Characteristics for OFDM Tuning, VDS = 28V, IDQ = 200mA NPT25015 Page 3 NDS-004 Rev 4, April 2013 NPT25015 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =200mA, TA=25C unless otherwise noted Figure 2 - Typical OFDM Performance at 2500MHz and 28V versus IDQ Typical Device Characteristics VDS=28V, IDQ =200mA, TA=25C unless otherwise noted Figure 3 - P3dB,PEP and Drain Efficiency versus Temperature at 2500MHz, Application Board Figure 5 - MTTF of NRF1 devices as a function of junction temperature Figure 4 - Power Derating Curve NPT25015 Page 4 NDS-004 Rev 4, April 2013 NPT25015 APP-NPT25015-25, 2500-2700MHz Linear WiMAX Application Board 802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20ms frame 75% filled, 10MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF Detailed design information and data available at www.nitronex.com VGS VDS RFIN RFOUT Figure 6 - APP-NPT25015-25 Demonstration Board and Schematic Table 2: APP-NPT25015-25 Demonstration Board Bill of Materials Name Value Tolerance Vendor Vendor Number C1 5.6pF +/- 0.1pF ATC ATC600F5R6B C2 2.2pF +/- 0.1pF ATC ATC600F2R2B C3 3.3pF +/- 0.1pF ATC ATC600F3R3B C4, C9 1.0uF 10% Panasonic ECJ-5YB2A105M C5, C8 0.1uF 10% Kemet C1206C104K1RACTU C6, C7 0.01uF 10% AVX 12061C103KAT2A C10 150uF 20% Nichicon UPW1C151MED C11 270uF 20% United Chemi-Con ELXY630ELL271MK25S C12 1.0pF +/- 0.1pF ATC ATC600F1R0B C13, C15 33pF 5% ATC ATC600F330B C14, C16 1000pF 10% Kemet C0805C102K1RACTU PA1 -- -- -- NPT25015D R1 49.9 ohm 1% Panasonic ERJ-2RKF49R9X R3 0.33 ohm 1% Panasonic ERJ-6RQFR33V -- -- -- -- Coin to mount PA1 Rogers R04350, t = 30mil er = 3.5 Substrate NPT25015 Page 5 NDS-004 Rev 4, April 2013 NPT25015 APP-NPT25015-25, 2500-2700MHz Linear WiMAX Application Board 802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, continuous frame data, 10MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF Detailed design information and data available at www.nitronex.com EVM (%) 30 8 40 7 35 6 25 5 20 4 15 3 10 2 5 1 0 0 23 25 27 29 31 33 35 37 8 Gain DE EVM (%) 30 7 6 25 5 20 4 15 3 10 2 5 1 0 39 0 23 25 27 29 Pout (dBm) 31 33 35 37 39 Pout (dBm) Figure 7 - Gain, Efficiency, EVM at 2500MHz Figure 8 - Gain, Efficiency, EVM at 2600MHz 8 Gain 35 7 DE EVM (%) 30 6 25 5 20 4 15 3 10 2 5 1 0 EVM (%) 40 Gain (dB), Drain Efficiency (%) EVM (%) 35 DE Gain (dB), Drain Efficiency (%) Gain EVM (%) Gain (dB), Drain Efficiency (%) 40 0 23 25 27 29 31 33 35 37 39 Pout (dBm) Figure 9 - Gain, Efficiency, EVM at 2700MHz NPT25015 Page 6 NDS-004 Rev 4, April 2013 NPT25015 Ordering Information Part Number Order Multiple NPT25015DT 97 NPT25015DR 1500 Description Tube; NPT25015 in D (PSOP2) Package Tape and Reel; NPT25015 in D (PSOP2) Package 1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com Figure 10 - D Package Dimensions and Pinout Inches Millimeters A Dim Min Max Min C A 0.189 0.196 4.80 4.98 B 0.150 0.157 3.81 3.99 C 0.107 0.123 2.72 3.12 8 D B 7 E 6 5 9 D/2 1 2 3 4 Chamfer A/2 9. Source Pad (Bottom) H G G1 SEATING PLANE 1.1.Gate NC 2.2.Gate Gate 3. Gate 3. Gate 4. Gate NC 5.4.Drain 6.5.Drain NC 7.6.Drain Drain 8. Drain Drain Pad 9.7.Source 8.(Bottom) NC Max D 0.071 0.870 1.80 22.1 E 0.230 0.244 5.84 6.19 f 0.050 BSC 1.270 BSC F 0.0138 0.0192 0.35 0.49 G 0.055 0.061 1.40 1.55 G1 0.000 0.004 0.00 0.10 H 0.075 0.098 1.91 2.50 L 0.016 0.035 0.41 0.89 m 0 8 0 8 m SEATING PLANE L F (8X) f (6X) Figure 11 - Mounting Footprint .150 .055 .105 .100 .180 .030 PWB Pad (8X Typ) NPT25015 Solder Paste .020" X .040" (8X Typ) R.016 (4X Typ) .140 .145 .176 Heat Sink Pedestal Solder Mask .005" Relief (Typ) PWB Cutout Page 7 Solder Paste .080" X .120" (Typ) NDS-004 Rev 4, April 2013 NPT25015 Nitronex, LLC 2305 Presidential Drive Durham, NC 27703 USA +1.919.807.9100 (telephone) +1.919.807.9200 (fax) info@nitronex.com www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). 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All other product or service names are the property of their respective owners. (c) Nitronex, LLC 2012. All rights reserved. NPT25015 Page 8 NDS-004 Rev 4, April 2013