1
HGTD1N120BNS, HGTP1N120BN
5.3A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120BNS and HGTP1N120BN are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49316.
Symbol
Features
5.3A, 1200V, TC = 25oC
1200V Switching SOA Capability
Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging JEDEC TO-220AB
JEDEC TO-252AA
Ordering Information
PART NUMBER PACKAGE BRAND
HGTD1N120BNS TO-252AA 1N120B
HGTP1N120BN TO-220AB 1N120BN
NOTE: Whenordering, use the entire part number.Addthesuffix9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A
C
E
G
ECG
COLLECTOR
(FLANGE)
E
COLLECTOR
(FLANGE)
G
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet January 2000 File Number 4649.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 |Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 5.3 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 2.7 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 6A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 6A at 1200V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD60 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/oC
Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 10 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL300 oC
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260 oC
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8µs
Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 13 µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.
2. ICE = 7A, L = 400µH, VGE = 15V, TJ = 25oC.
3. VCE(PK) = 840V, TJ = 125oC, RG = 82Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V
Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V
Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
TC = 125oC - 20 - µA
TC = 150oC - - 1.0 mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 1.0A
VGE = 15V TC = 25oC - 2.5 2.9 V
TC = 150oC - 3.8 4.3 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 50µA, VCE = VGE 6.0 7.1 - V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 82Ω, VGE = 15V,
L = 2mH, VCE(PK) = 1200V 6- - A
Gate to Emitter Plateau Voltage VGEP IC = 1.0A, VCE = 0.5 BVCES - 9.2 - V
On-State Gate Charge QG(ON) IC = 1.0A
VCE = 0.5 BVCES VGE = 15V - 14 20 nC
VGE = 20V - 15 21 nC
HGTD1N120BNS, HGTP1N120BN
3
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC
ICE = 1.0A
VCE = 0.8 BVCES
VGE = 15V
RG = 82
L = 4mH
Test Circuit (Figure 18)
-1520ns
Current Rise Time trI -1114ns
Current Turn-Off Delay Time td(OFF)I -6776ns
Current Fall Time tfI - 226 300 ns
Turn-On Energy (Note 5) EON1 -70- J
Turn-On Energy (Note 5) EON2 - 172 187 J
Turn-Off Energy (Note 4) EOFF - 90 123 J
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC
ICE = 1.0 A
VCE = 0.8 BVCES
VGE = 15V
RG = 82
L = 4mH
Test Circuit (Figure 18)
-1317ns
Current Rise Time trI -1115ns
Current Turn-Off Delay Time td(OFF)I -7588ns
Current Fall Time tfI - 258 370 ns
Turn-On Energy (Note 5) EON1 - 145 - J
Turn-On Energy (Note 5) EON2 - 385 440 J
Turn-Off Energy (Note 4) EOFF - 120 175 J
Thermal Resistance Junction To Case RθJC - - 2.1 oC/W
NOTES:
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJas the IGBT. The diode type is specified in Figure 18.
Typical Performance Curves (Unless Otherwise Specified)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
0
4
5
1
25 75 100 125 150
3
2
6VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
3
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
1
2
600 800400200 1000 1200
0
4
6
5
7TJ= 150oC, RG = 82, VGE = 15V, L = 2mH
HGTD1N120BNS, HGTP1N120BN
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves (Unless Otherwise Specified) (Continued)
fMAX, OPERATING FREQUENCY (kHz)
0.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
5
10
2.01.0
100
3.0
200
300 TCVGE
110oC13V
15V
15V
75oC
110oC
75oC13V
TJ= 150oC, RG = 82, L = 4mH, VCE = 960V
TC= 75oC, VGE = 15V
IDEAL DIODE
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 2.1oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD- PC) / (EON2 + EOFF)
VGE, GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
13 14 14.5 15
10
12
16
20
18
13.5
14
10
12
16
20
18
14
VCE = 840V, RG = 82, TJ= 125oC
tSC
ISC
024
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
2
4
6
6810
1
3
5
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 13V
TC = 150oC
TC = 25oC
TC = -55oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2
3
4
0246810
1
6
0
5
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
TC = -55oC TC = 150oC
TC = 25oC
EON2, TURN-ON ENERGY LOSS ( J)
1000
600
ICE, COLLECTOR TO EMITTER CURRENT (A)
800
400
200
1.5120.5
1200
2.5
03
RG = 82, L = 4mH, VCE = 960V
TJ = 150oC, VGE = 13V
TJ = 150oC, VGE = 15V
TJ = 25oC, VGE = 15V
TJ = 25oC, VGE = 13V
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS ( J)
01 1.5
2
0.5
50
150
100
200
250
2.5 3
TJ = 150oC, VGE = 13V OR 15V
TJ = 25oC, VGE = 13V OR 15V
RG = 82, L = 4mH, VCE = 960V
HGTD1N120BNS, HGTP1N120BN
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves (Unless Otherwise Specified) (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
10 1.5 2 2.5 3
td(ON)I, TURN-ON DELAY TIME (ns)
8
12
20
16
24 RG = 82, L = 4mH, VCE = 960V
TJVGE
25oC13V
150oC13V
25oC15V
150oC15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
1
4
8
24
20
12
20.5
16
1.5 2.5
28
3
RG = 82, L = 4mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 13V
TJ = 25oC, TJ = 150oC, VGE = 15V
12
64
1.5
56
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
2.5
84
72
76
30.5
60
68
80 TJ = 150oC, VGE = 15V
TJ = 25oC, VGE = 13V
RG = 82, L = 4mH, VCE = 960V
TJ = 150oC, VGE = 13V
TJ = 25oC, VGE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
0.5 1 2
160
240
1.5
120
280
360
2.5 3
320
200
RG = 82, L = 4mH, VCE = 960V
TJ = 25oC, VGE = 13V OR 15V
TJ = 150oC, VGE = 13V OR 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
2
4
6
1378910 12
VGE, GATE TO EMITTER VOLTAGE (V)
11
8
10
12
14 15
14
16
18
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 20V
TC = -55oC
TC = 150oC
TC = 25oC
VGE, GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
15
3
6
00208412
9
12
16
IG(REF) = 1mA, RL = 600, TC = 25oC
VCE = 1200V
VCE = 800V
VCE = 400V
HGTD1N120BNS, HGTP1N120BN
6
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS
Typical Performance Curves (Unless Otherwise Specified) (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
50
C, CAPACITANCE (pF)
100
150
250
300
200
350
CIES
COES
CRES
FREQUENCY = 1MHz
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
4
02
0410
2
6
68
1
3
5
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TC = 110oC
VGE = 12V
VGE = 10V
VGE = 15V
t1, RECTANGULAR PULSE DURATION (s)
ZθJC, NORMALIZED THERMAL RESPONSE
0.005
0.01
1.0
10-3 10-2 10-1 100
10-4
10-5
2.0
0.1 t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PDX ZθJC X RθJC) + TC
SINGLE PULSE
0.1
0.01
0.02
0.5
0.05
0.2
RG = 82
L = 4mH
VDD = 960V
+
-
RHRD4120
tfI
td(OFF)I
trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
ICE
HGTD1N120BNS, HGTP1N120BN
7
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined b y fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD=(T
JM -T
C)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC=(V
CE xI
CE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 19. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE xV
CE) during turn-off. All tail losses are included in
the calculation for EOFF; i.e., the collector current equals
zero (ICE = 0).
HGTD1N120BNS, HGTP1N120BN
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.