MRF7S19170HR3 MRF7S19170HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
!Typical Single--Carrier W--CDMA Performance: VDD =28Volts,I
DQ =
1400 mA, Pout = 50 Watts Avg., f = 1987.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 17.2 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
!Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 170 Watts CW
Output Power
!Pout @ 1 dB Compression Point ≃170 Watts CW
Features
!100% PAR Tested for Guaranteed Output Power Capability
!Characterized with Series Equivalent Large--Signal Impedance Parameters
!Internally Matched for Ease of Use
!Integrated ESD Protection
!Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
!Designed for Digital Predistortion Error Correction Systems
!RoHS Compliant
!In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg -- 65 to +150 "C
Case Operating Temperature TC150 "C
Operating Junction Temperature (1,2) TJ225 "C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 80"C, 170 W CW
Case Temperature 72"C, 25 W CW
R#JC
0.25
0.31
"C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF7S19170H
Rev. 2, 3/2011
Freescale Semiconductor
Technical Data
MRF7S19170HR3
MRF7S19170HSR3
1930--1990 MHz, 50 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465C--02, STYLE 1
NI--880S
MRF7S19170HSR3
CASE 465B--03, STYLE 1
NI--880
MRF7S19170HR3
$Freescale Semiconductor, Inc., 2006, 2008, 2011.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1A (Minimum)
Machine Model (per EIA/JESD22--A115) B (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Electrical Characteristics (TA=25"C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 %Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 %Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 %Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 372 %Adc)
VGS(th) 1.2 22.7 Vdc
Gate Quiescent Voltage
(VDS =28Vdc,I
D= 1400 mAdc)
VGS(Q) —2.7 —Vdc
Fixture Gate Quiescent Voltage (1)
(VDD =28Vdc,I
D= 1400 mAdc, Measured in Functional Test)
VGG(Q) 45.4 7.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=3.72Adc)
VDS(on) 0.1 0.15 0.3 Vdc
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS =28Vdc&30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —0.9 —pF
Output Capacitance
(VDS =28Vdc&30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —703 —pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1400 mA, Pout = 50 W Avg., f = 1987.5 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ &5MHzOffset.
Power Gain Gps 16 17.2 19 dB
Drain Efficiency 'D29 32 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.7 6.2 —dB
Adjacent Channel Power Ratio ACPR —--37.5 -- 3 5 dBc
Input Return Loss IRL — -- 1 6 -- 9 dB
1. VGG =2xV
GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S19170HR3 MRF7S19170HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA=25"C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1400 mA, 1930--1990 MHz Bandwidth
Video Bandwidth @ 170 W PEP Pout whereIM3=--30dBc
(Tone Spacing from 100 kHz to VBW)
(IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
—25 —
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 170 W CW GF—0.5 —dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@P
out = 170 W CW
)—2.06 —"
Average Group Delay @ Pout = 170 W CW, f = 1960 MHz Delay —4.7 —ns
Part--to--Part Insertion Phase Variation @ Pout = 170 W CW,
f = 1960 MHz, Six Sigma Window
() —16 —"
Gain Variation over Temperature
(--30"Cto+85"C)
(G — 0.015 —dB/"C
Output Power Variation over Temperature
(--30"Cto+85"C)
(P1dB —0.01 —dB/"C
4
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
Figure 1. MRF7S19170HR3(HSR3) Test Circuit Schematic
Z12 0.060*x 0.420*Microstrip
Z13* 0.197*x 0.083*Microstrip
Z14* 0.332*x 0.083*Microstrip
Z15* 0.158*x 0.083*Microstrip
Z16* 0.572*x 0.083*Microstrip
Z17, Z18 0.063*x 0.220*Microstrip
Z19 0.160*x 0.083*Microstrip
Z20, Z21 1.120*x 0.080*Microstrip
PCB Taconic TLX--0300, 0.030*,+r=2.5
* Variable for tuning
Z1* 0.588*x 0.083*Microstrip
Z2* 0.146*x 0.083*Microstrip
Z3* 0.068*x 0.083*Microstrip
Z4 0.865*x 0.098*Microstrip
Z5 0.154*x 0.098*Microstrip
Z6 0.271*x 0.787*Microstrip
Z7 1.410*x 0.080*Microstrip
Z8 0.194*x 0.787*Microstrip
Z9 0.115*x 1.360*Microstrip
Z10 0.230*x 1.360*Microstrip
Z11 0.185*x 1.120*Microstrip
VBIAS VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
C5 C4
R1
Z1 Z2 Z3 Z4
C7
Z10
Z5
R2 Z7
R3
Z8 Z11 Z12 Z13 Z14 Z15
C1
Z6 Z16
C11
C10
C12C13C14
Z9
Z20
C8 C15 C16 C19
Z21
C9 C17 C18
+
C2
C6 C3
Z17 Z18 Z19
Table 5. MRF7S19170HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2 1.8 pF Chip Capacitors ATC100B1R8BT500XT ATC
C3, C8, C9, C10, C11 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC
C4 100 pF Chip Capacitor ATC100B101JT500XT ATC
C5 100 nF Chip Capacitor 200B104MT ATC
C6, C15, C16, C17, C18 10 %F Chip Capacitors C5750X5R1H106MT TDK
C7 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC
C12 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC
C13 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC
C14 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC
C19 470 %F, 63 V Electrolytic Capacitor, Axial EKME630ELL471M12X25LL United Chemi--Con
R1, R2 10 k,, 1/4 W Chip Resistors CRCW12061002FKEA Vishay
R3 10 ,, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay
MRF7S19170HR3 MRF7S19170HSR3
5
RF Device Data
Freescale Semiconductor
Figure 2. MRF7S19170HR3(HSR3) Test Circuit Component Layout
MRF7S19170H
Rev 0
CUT OUT AREA
R1
R2
C3
C4
C5
R3
C7
C1 C2
C9 C17 C18
C13 C12C14
C11
C10
C8 C15 C16
C19
C6
6
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
20401880
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
198019401920
10
18
17
16
15
14
13
12
11
-- 2 . 5
35
34
33
32
31
-- 1
-- 1 . 5
-- 2
'D
IRL, INPUT RETURN LOSS (dB)
PARC (dB)
-- 3 0
-- 1 0
-- 1 5
-- 2 0
-- 2 5
'D, DRAIN
EFFICIENCY (%)
1960
1900 20202000
VDD =28Vdc,P
out =50W(Avg.),I
DQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01%
Probability (CCDF)
Gps, POWER GAIN (dB)
20401880
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 84 Watts Avg.
198019401920
10
18
17
16
15
14
13
12
11
-- 4 . 2
44
43
42
41
40
-- 3
-- 3 . 4
-- 3 . 8
'D
IRL, INPUT RETURN LOSS (dB)
PARC (dB)
-- 3 0
-- 1 0
-- 1 5
-- 2 0
-- 2 5
'D, DRAIN
EFFICIENCY (%)
1960
1900 20202000
VDD =28Vdc,P
out =84W(Avg.),I
DQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
Figure 5. Two--Tone Power Gain versus
Output Power
100
15
19
1
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
17
16
10 400
Gps, POWER GAIN (dB)
18
1750 mA
700 mA
1400 mA
1050 mA
IDQ = 2100 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
-- 1 0
Pout, OUTPUT POWER (WATTS) PEP
10
-- 2 0
-- 3 0
-- 4 0
100
-- 6 0
-- 5 0
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
1
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
400
1750 mA
1400 mA
1050 mA
IDQ = 700 mA 2100 mA
MRF7S19170HR3 MRF7S19170HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
-- 6 0
-- 1 0
100
-- 4 0
-- 5 0
-- 3 0
-- 2 0
7th Order
5th Order
3rd Order
400
VDD =28Vdc,I
DQ = 1400 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
VDD =28Vdc,P
out = 170 W (PEP), IDQ = 1400 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
IM3--U
-- 1 0
-- 2 0
-- 4 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 5 0
-- 3 0 IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
0
Figure 9. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 4
30
Actual
Ideal
0
-- 2
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON THE CCDF (dB)
35 80
25
50
45
40
35
30
'D-DRAIN EFFICIENCY (%)
VDD =28Vdc,I
DQ = 1400 mA
f = 1960 MHz, Input PAR = 7.5 dB
-- 1 d B = 4 5 W
-- 2 d B = 6 2 W
-- 3 d B = 8 4 W
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
50
-- 7 0
-- 2 0
40 4241
-- 3 0
-- 4 0
-- 5 0
-- 6 0
ACPR, UPPER AND LOWER RESULTS (dBc)
43 44 45 46 47
Uncorrected, Upper and Lower
DPD Corrected
No Memory Correction
DPD Corrected
with Memory Correction
VDD =28Vdc,I
DQ = 1400 mA, f = 1960 MHz
Single--Carrier W--CDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
48 49 400
13
19
0
90
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD =28Vdc
IDQ = 1400 mA
f = 1960 MHz
TC=--30_C
25_C
85_C
101
18
17
16
15
14
75
60
45
30
15
'D-DRAIN EFFICIENCY (%)
Gps
'D
Gps, POWER GAIN (dB)
100
-- 3 0 _C
25_C
85_C
40 45 50 55 60 65 70 9075 85
1
8
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
TYPICAL CHARACTERISTICS
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
Gps, POWER GAIN (dB)
100
13
18
0
14
15
16
28 V
IDQ = 1400 mA
f = 1960 MHz
300
VDD =24V
32 V
17
200
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ &5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 14. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
MRF7S19170HR3 MRF7S19170HSR3
9
RF Device Data
Freescale Semiconductor
Zo=10,
Zload
Zsource
f = 2040 MHz
f = 1880 MHz
f = 1880 MHz
f = 2040 MHz
VDD =28Vdc,I
DQ = 1400 mA, Pout =50WAvg.
f
MHz
Zsource
,
Zload
,
1880 1.338 -- j7.859 0.967 -- j2.868
1900 1.515 -- j7.609 0.942 -- j2.725
1920 1.743 -- j7.432 0.920 -- j2.585
1940 2.007 -- j7.352 0.893 -- j2.449
1960 2.249 -- j7.393 0.865 -- j2.313
1980 2.410 -- j7.553 0.841 -- j2.192
2000 2.411 -- j7.788 0.820 -- j2.073
2020 2.244 -- j7.995 0.802 -- j1.957
2040 1.966 -- j8.101 0.779 -- j1.834
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Figure 15. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
10
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
36
P3dB = 53.97 dBm (249 W)
Pin, INPUT POWER (dBm)
VDD =28Vdc,I
DQ = 1400 m, Pulsed CW
12 %sec(on), 10% Duty Cycle, f = 1960 MHz
56
54
52
37 3938 4140 4442
Actual
Ideal
P1dB = 53.25 dBm
(211 W)
57
55
51
43
Pout, OUTPUT POWER (dBm)
P6dB = 54.33 dBm (271 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
53
58
59
60
61
35343332
Test Impedances per Compression Level
Zsource
,
Zload
,
P3dB 2.34 -- j9.24 0.79 -- j2.94
Figure 16. Pulsed CW Output Power
versus Input Power
36
P3dB = 54.9 dBm (310 W)
Pin, INPUT POWER (dBm)
VDD =32Vdc,I
DQ = 1400 mA, Pulsed CW
12 %sec(on), 10% Duty Cycle, f = 1960 MHz
56
54
52
37 4140 4442
Actual
Ideal
P1dB = 54.14 dBm
(259 W)
57
55
43
Pout, OUTPUT POWER (dBm)
P6dB = 55.27 dBm (336 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
53
58
59
60
61
62
353433 4538 39
Test Impedances per Compression Level
Zsource
,
Zload
,
P3dB 2.34 -- j9.24 0.79 -- j2.94
Figure 17. Pulsed CW Output Power
versus Input Power
MRF7S19170HR3 MRF7S19170HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
12
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
MRF7S19170HR3 MRF7S19170HSR3
13
RF Device Data
Freescale Semiconductor
14
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
MRF7S19170HR3 MRF7S19170HSR3
15
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
!EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
!Electromigration MTTF Calculator
!RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Oct. 2006 !Initial Release of Data Sheet
1Dec. 2008 !Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
!Updated Typical Performance table to provide better definition of characterization attributes, p. 3
!Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
!Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic
range, p. 7
!Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2and listed
operating characteristics and location of MTTF calculator for device, p. 8
!Deleted output signal data from Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping,
Single--Carrier Test Signal, p. 8
2Mar. 2011 !Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
!Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
!Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14
respectively after Fig. 13 removed)
!Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 15
16
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
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Document Number: MRF7S19170H
Rev. 2, 3/2011
