Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
I
AR
E
AR
mJ
T
J
, T
STG
°C
Symbol Device Typ Max Units
n-ch 48 62.5 °C/W
n-ch 74 110 °C/W
R
θJL
n-ch 35 50 °C/W
p-ch 48 62.5 °C/W
p-ch 74 110 °C/W
R
θJL
p-ch 35 50 °C/W
20
A
14 -20
9.8
Power Dissipation
Continuous Drain
Current
A
I
D
P
D
Avalanche Current
B
Repetitive avalanche energy L=0.1mH
B
T
A
=25°C
T
A
=70°C
Pulsed Drain Current
B
-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s R
θJA
Maximum Junction-to-Ambient
A
40 -40
±20
Drain-Source Voltage ±20Gate-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
W
6
5
30
2
1.28
-4
-5
2
1.28
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
-30
T
A
=70°C
T
A
=25°C
Steady-State
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
AO4614B
40V Dual P + N-Channel MOSFET
Product Summary
N-Channel P-Channel
V
DS
(V) = 40V, -40V
I
D
= 6A (V
GS
=10V) -5A (VGS=-10V)
R
DS(ON)
< 30mΩ (V
GS
=10V) < 45mΩ (VGS= -10V)
< 38mΩ (V
GS
=4.5V) < 63mΩ (VGS= -4.5V)
100% UIS Tested 100% UIS Tested
100% Rg Tested 100% Rg Tested
General Description
The AO4614B uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used
in H-bridge, Inverters and other applications.
G1
S1
G2
S2
D1
D1
D2
D2
2
4
5
1
3
8
6
7
Top View
G1
D1
S1
G2
D2
S2
n-channel
p-channel
SOIC-8
Top View Bottom View
Pin1
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4614B
Symbol Min Typ Max Units
BV
DSS
40 V
1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
1.7 2.5 3 V
I
D(ON)
30 A
24 30
T
J
=125°C 36 45
30 38
g
FS
19 S
V
SD
0.76 1 V
I
S
2 A
C
iss
410 516 650 pF
C
oss
82 pF
C
rss
43 pF
R
g
4.6 Ω
Q
g
(10V) 8.9 10.8 nC
Q
g
(4.5V) 4.3 5.6 nC
Q
gs
2.4 nC
Q
gd
1.4 nC
t
D(on)
6.4 ns
t
r
3.6 ns
t
D(off)
16.2 ns
t
f
6.6 ns
t
rr
18 24 ns
Q
rr
10 nC
9
12
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Output Capacitance
Input Capacitance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
Gate resistance
I
S
=1A,V
GS
=0V
V
GS
=10V, I
D
=6A
Diode Forward Voltage
V
GS
=10V, V
DS
=20V, R
L
=3.3Ω,
R
GEN
=3Ω
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Total Gate Charge V
GS
=10V, V
DS
=20V,
I
D
=6A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance V
GS
=4.5V, I
D
=5A
V
DS
=5V, I
D
=6A
mΩ
Gate Threshold Voltage V
DS
=V
GS
I
D
=250µA
On state drain current V
GS
=10V, V
DS
=5V
µA
Gate-Body leakage current V
DS
=0V, V
GS
= ±20V
N Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current V
DS
=40V, V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Body Diode Reverse Recovery Charge I
F
=6A, dI/dt=100A/µs
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=6A, dI/dt=100A/µs
Total Gate Charge
V
GS
=0V, V
DS
=20V, f=1MHz
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2 : Nov. 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
9
12
0
5
10
15
20
25
30
35
40
0 1 2 3 4 5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=3.5V
4V
10V 5V
4.5V
0
5
10
15
20
25
30
2 2.5 3 3.5 4 4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
20
22
24
26
28
30
32
34
36
0 5 10 15 20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
0.0001
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25°C
125°C
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
V
GS
=10V
I
D
=6A
V
GS
=4.5V
I
D
=5A
10
20
30
40
50
60
70
80
345678910
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=6A
25°C
125°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
9
12
0
2
4
6
8
10
0 2 4 6 8 10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
200
400
600
800
0 10 20 30 40
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
1
10
100
1000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
C
oss
C
rss
0.01
0.1
1
10
100
0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
1s
10s
DC
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
V
DS
=20V
I
D
= 6A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=74°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4614B
Symbol Min Typ Max Units
BV
DSS
-40 V
-1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
-1.7 -2 -3 V
I
D(ON)
-30 A
36 45
T
J
=125°C 52 65
50 63
g
FS
13 S
V
SD
-0.76 -1 V
I
S
-2 A
C
iss
750 940 1175 pF
C
oss
97 pF
C
rss
72 pF
R
g
14 Ω
Q
g
(-10V) 17 22 nC
Q
g
(-4.5V) 7.9 10 nC
Q
gs
3.4 nC
Q
gd
3.2 nC
t
D(on)
6.2 ns
t
r
8.4 ns
t
D(off)
44.8 ns
t
f
41.2 ns
t
rr
21 27 ns
Q
rr
14 nC
9
12
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage I
D
= -250µA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current V
DS
= -40V, V
GS
=0V µA
Gate-Body leakage current V
DS
=0V, V
GS
= ±20V
Gate Threshold Voltage V
DS
=V
GS
I
D
= -250µA
On state drain current V
GS
= -10V, V
DS
= -5V
mΩ
V
DS
= -5V, I
D
= -5A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -4A
Diode Forward Voltage I
S
= -1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
DYNAMIC PARAMETERS
Input Capacitance V
GS
=0V, V
DS
= -20V, f=1MHz
Gate resistance
Output Capacitance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge V
GS
= -10V, V
DS
= -20V,
I
D
= -5A
V
GS
= -10V, V
DS
= -20V, R
L
=4Ω,
R
GEN
=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Total Gate Charge
Body Diode Reverse Recovery Time I
F
= -5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge I
F
= -5A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the
t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
Rev1 : Jan 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
9
12
0
5
10
15
20
25
30
0 1 2 3 4 5
-V
DS
(Volts)
Fig 12: On-Region Characteristics
-I
D
(A)
V
GS
=-3.5V
-4V
-10V
-5V
-4.5V
0
5
10
15
20
25
30
1.5 2 2.5 3 3.5 4 4.5
-V
GS
(Volts)
Figure 13: Transfer Characteristics
-I
D
(A)
30
35
40
45
50
55
60
65
0 5 10 15 20
-I
D
(A)
Figure 14: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
0.0001
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V
SD
(Volts)
Figure 17: Body-Diode Characteristics
-I
S
(A)
25°C
125°C
0.7
0.9
1.1
1.3
1.5
1.7
-50 -25 0 25 50 75 100 125 150
Temperature (°C)
Figure 15: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
V
GS
=-10V
I
D
=-5A
V
GS
=-4.5V
I
D
=-4A
30
50
70
90
110
130
3 4 5 6 7 8 9 10
-V
GS
(Volts)
Figure 16: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-5A
25°C
125°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
9
12
0
2
4
6
8
10
0 3 6 9 12 15 18
Q
g
(nC)
Figure 18: Gate-Charge Characteristics
-V
GS
(Volts)
0
200
400
600
800
1000
1200
1400
0 10 20 30 40
-V
DS
(Volts)
Figure 19: Capacitance Characteristics
Capacitance (pF)
C
iss
1
10
100
1000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 21: Single Pulse Power Rating Junction-
to-Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
C
oss
C
rss
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
(Volts)
-I
D
(Amps)
Figure 20: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
1s
10s
DC
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
V
DS
=-20V
I
D
= -5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=74°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
