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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers Features Description UL recognized (File # E90700, Vol. 2) The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. IEC60747-5-2 recognized (File # 102497) - Add option V (e.g., MCT2VM) Applications Power supply regulators Digital logic inputs Microprocessor inputs Schematic Anode 1 Cathode 2 No Connection 3 (c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 Package Outlines 6 Base 5 Collector 4 Emitter www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers September 2009 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units TOTAL DEVICE TSTG Storage Temperature -40 to +150 C TOPR Operating Temperature -40 to +100 C TSOL PD Lead Solder Temperature Total Device Power Dissipation @ TA = 25C Derate above 25C 260 for 10 sec C 250 mW 2.94 mW/C EMITTER IF DC/Average Forward Input Current 60 mA VR Reverse Input Voltage 3 V Forward Current - Peak (300s, 2% Duty Cycle) 3 A 120 mW 1.41 mW/C Collector Current 50 mA Collector-Emitter Voltage 30 V IF(pk) PD LED Power Dissipation @ TA = 25C Derate above 25C DETECTOR IC VCEO PD Detector Power Dissipation @ TA = 25C Derate above 25C (c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 150 mW 1.76 mW/C www.fairchildsemi.com 2 MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers Absolute Maximum Ratings Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ.* Max. Units 1.50 V 10 A EMITTER VF IR Input Forward Voltage Reverse Leakage Current IF = 20mA MCT2M MCT2EM MCT271M 1.25 TA = 0C-70C, IF = 40mA MCT210M 1.33 VR = 3.0V MCT2M MCT2EM MCT271M 0.001 TA = 0C-70C, VR = 6.0V MCT210M DETECTOR BVCEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IF = 0 ALL TA = 0C-70C MCT210M 30 100 V 120 V V BVCBO Collector-Base Breakdown Voltage IC = 10A, IF = 0 MCT2M MCT2EM MCT271M 70 TA = 0C-70C MCT210M 30 BVECO Emitter-Collector Breakdown Voltage IE = 100A, IF = 0 MCT2M MCT2EM MCT271M 7 10 TA = 0C-70C MCT210M 6 10 ICEO Collector-Emitter Dark Current VCE = 10V, IF = 0 ALL ICBO Collector-Base Dark Current VCB = 10V, IF = 0 ALL CCE Capacitance VCE = 0V, f = 1MHz ALL 1 50 VCE = 5V, TA = 0C-70C nA 30 A 20 nA 8 pF *All typical TA = 25C Isolation Characteristics Symbol VISO Parameter Input-Output Isolation Voltage RISO Isolation Resistance CISO Isolation Capacitance Test Conditions Min f = 60Hz, t = 1 sec. 7500 VI-O = 500 VDC 1011 Typ* Max Units Vac(pk) 0.2 2 pF *All typicals at TA = 25C (c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 www.fairchildsemi.com 3 MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers Electrical Characteristics (TA = 25C unless otherwise specified) Transfer Characteristics Symbol Parameter Test Conditions Device Min. Typ.* TA = 0C-70C MCT210M 150 IF = 10mA, VCE = 10V MCT2M MCT2EM 20 MCT271M 45 IF = 3.2mA to 32mA, VCE = 0.4V, TA = 0C-70C MCT210M 50 IC = 2mA, IF = 16mA MCT2M MCT2EM MCT271M IC = 16mA, IF = 32mA, TA = 0C-70C MCT210M IF = 15mA, VCC = 5V, RL = 2k, RB = Open (Fig. 11) MCT2M MCT2EM 1.1 IF = 20mA, VCC = 5 V, RL = 2k, RB = 100k) (Fig. 11) MCT2M MCT2EM 1.3 IF = 15mA, VCC = 5V, RL = 2k, RB = Open (Fig. 11) MCT2M MCT2EM 50 IF = 20mA, VCC = 5V, RL = 2k, RB = 100k (Fig. 11) MCT2M MCT2EM 20 Max. Unit DC CHARACTERISTICS CTR VCE(SAT) Output Collector Current Collector-Emitter Saturation Voltage % 90 0.4 V AC CHARACTERISTICS ton toff AC Characteristic Saturated Turn-on Time from 5V to 0.8V Saturated Turn-off Time from SAT to 2.0 V s s ton Turn-on Time IF = 10mA, VCC = 10V, RL = 100 MCT2M MCT2EM 2 s toff Turn-off Time IF = 10mA, VCC = 10V, RL = 100 MCT2M MCT2EM 2 s tr Rise Time IF = 10mA, VCC = 10V, RL = 100 MCT2M MCT2EM 2 s tf Fall Time IF = 10mA, VCC = 10V, RL = 100 MCT2M MCT2EM 1.5 s ton Saturated turn-on time 1.0 s Saturated turn-off time (Approximates a typical TTL interface) IF = 16mA, RL = 1.9k, VCC = 5V (Fig. 11) MCT271M toff 48 s ton Saturated turn-on time MCT271M 1.0 s toff Saturated turn-off time (Approximates a typical low power TTL interface) IF = 16mA, RL = 4.7k, VCC = 5 V (Fig. 20) 98 s MCT210M 1.0 s 11 s MCT210M 1.0 s 50 s 2 s 2 s tr Saturated rise time tf Saturated fall time IF = 16mA, RL = 560, VCC = 5V) (Fig. 11, 12) TPD (HL) Saturated propagation delay - HIGH to LOW IF = 16mA, RL = 2.7k (Fig. 11, 12) TPD (LH) Saturated propagation delay - LOW to HIGH tr Non-saturated rise time tf Non-saturated fall time ton Non-saturated turn-on time toff Non-saturated turn-off time IC = 2mA, VCC = 5V, RL = 100 (Fig. 11) MCT210M IC = 2mA, VCC = 5V, RL = 100 (Fig. 20) MCT271M 2 7 s 2 7 s *All typicals at TA = 25C (c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 www.fairchildsemi.com 4 MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers Electrical Characteristics (Continued) (TA = 25C unless otherwise specified) As per IEC 60747-5-2, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC 1594 Vpeak Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC 1275 Vpeak VIORM Max. Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm Insulation Resistance at Ts, VIO = 500V 109 RIO (c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 www.fairchildsemi.com 5 MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers Safety and Insulation Ratings Fig. 2 Normalized CTR vs. Forward Current 1.8 1.6 1.7 1.4 1.6 1.2 NORMALIZED CTR VF - FORWARD VOLTAGE (V) Fig. 1 LED Forward Voltage vs. Forward Current 1.5 1.4 TA = 55C 1.3 TA = 25C VCE = 5.0V TA = 25C Normalized to IF = 10mA 1.0 0.8 0.6 0.4 1.2 TA = 100C 0.2 1.1 0.0 1.0 1 10 0 100 2 4 6 IF - LED FORWARD CURRENT (mA) Fig. 3 Normalized CTR vs. Ambient Temperature 10 12 14 16 18 20 Fig. 4 CTR vs. RBE (Unsaturated) 1.4 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 1.0 1.2 IF = 5mA NORMALIZED CTR 8 IF - FORWARD CURRENT (mA) 1.0 IF = 10mA 0.8 IF = 20mA 0.6 Normalized to IF = 10mA TA = 25C 0.4 0.9 IF = 20mA 0.8 IF = 10mA 0.7 IF = 5mA 0.6 0.5 0.4 0.3 0.2 0.1 VCE = 5.0V 0.0 0.2 -60 -40 -20 0 20 40 60 80 100 10 100 TA - AMBIENT TEMPERATURE (C) Fig. 5 CTR vs. RBE (Saturated) VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 1.0 0.9 VCE= 0.3V 0.8 IF = 20mA 0.7 0.6 IF = 10mA 0.5 0.4 IF = 5mA 0.3 0.2 0.1 0.0 10 100 1000 RBE - BASE RESISTANCE (k) 1000 RBE - BASE RESISTANCE (k) 100 TA = 25C 10 1 IF = 2.5mA 0.1 IF = 20mA 0.01 IF = 5mA 0.001 0.01 IF = 10mA 0.1 1 10 IC - COLLECTOR CURRENT (mA) (c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 www.fairchildsemi.com 6 MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers Typical Performance Curves Fig. 7 Switching Speed vs. Load Resistor Fig. 8 Normalized ton vs. RBE 1000 5.0 NORMALIZED ton - (ton(RBE) / ton(open)) IF = 10mA VCC = 10V TA = 25C SWITCHING SPEED (s) 100 Toff 10 Tf Ton 1 Tr 0.1 4.5 VCC = 10V IC = 2mA RL = 100 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.1 1 10 10 100 100 10000 ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 1.3 NORMALIZED toff - (toff(RBE) / toff(open)) 100000 Fig. 10 Dark Current vs. Ambient Temperature Fig. 9 Normalized toff vs. RBE 1.4 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VCC = 10V IC = 2mA RL = 100 0.4 10000 RBE - BASE RESISTANCE (k) R - LOAD RESISTOR (k) 0.5 1000 0.3 0.2 VCE = 10 V TA = 25C 1000 100 10 1 0.1 0.01 0.1 10 100 1000 10000 0.001 100000 0 RBE - BASE RESISTANCE (k) (c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) www.fairchildsemi.com 7 MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers Typical Performance Curves (Continued) TEST CIRCUIT WAVE FORMS VCC = 10V INPUT PULSE IC IF RL INPUT 10% OUTPUT OUTPUT PULSE 90% RBE tr tf ton toff Adjust IF to produce IC = 2mA Figure 11. Switching Time Test Circuit and Waveforms INPUT TPDHL TPDLH 5V OUTPUT (SATURATED) 1.5 V 1.5 V SAT Figure 12. Switching Time Waveforms (MCT210M) (c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 www.fairchildsemi.com 8 MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers Typical Electro-Optical Characteristics Option Order Entry Identifier (Example) No suffix MCT2M S MCT2SM SR2 MCT2SR2M T MCT2TM 0.4" Lead Spacing V MCT2VM IEC60747-5-2 TV MCT2TVM IEC60747-5-2, 0.4" Lead Spacing SV MCT2SVM IEC60747-5-2, Surface Mount SR2V MCT2SR2VM Description Standard Through Hole Device (50 units per tube) Surface Mount Lead Bend Surface Mount; Tape and Reel (1,000 units per reel) IEC60747-5-2, Surface Mount, Tape and Reel (1,000 units per reel) Marking Information 1 V 3 MCT2 2 X YY Q 6 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) 4 One digit year code, e.g., `7' 5 Two digit work week ranging from `01' to `53' 6 Assembly package code *Note - Parts that do not have the `V' option (see definition 3 above) that are marked with date code `325' or earlier are marked in portrait format. (c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 www.fairchildsemi.com 9 MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers Ordering Information 12.0 0.1 4.5 0.20 2.0 0.05 O1.5 MIN 4.0 0.1 0.30 0.05 1.75 0.10 11.5 1.0 21.0 0.1 9.1 0.20 O1.5 0.1/-0 10.1 0.20 0.1 MAX 24.0 0.3 User Direction of Feed Reflow Profile 300 260C 280 260 >245C = 42 Sec 240 220 200 180 C Time above 183C = 90 Sec 160 140 120 1.822C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) (c)2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 www.fairchildsemi.com 10 MCT2M, MCT2EM, MCT210M, MCT271M -- Phototransistor Optocouplers Carrier Tape Specification ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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