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1. Product profile
1.1 General description
PNP Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD)
plastic packages.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PDTA123J series
PNP resistor-equipped transistors;
R1 = 2.2 k, R2 = 47 k
Rev. 5 — 21 December 2011 Product data sheet
Table 1. Product overview
Type number Package NPN
complement Package
configuration
NXP JEITA JEDEC
PDTA123JE SOT416 SC-75 - PDTC123JE ultra small
PDTA123JM SOT883 SC-101 - PDTC123JM leadless ultra small
PDTA123JT SOT23 - TO-236AB PDTC123JT small
PDTA123JU SOT323 SC-70 - PDTC123JU very small
100 mA output current capability Reduces component count
Built-in bias resistors Reduces pick and place costs
Simplifies circuit design AEC-Q101 qualified
Digital application in automotive and
industrial segments
Cost-saving alternative for BC847/857
series in digital applications
Control of IC inputs Switching loads
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 50 V
IOoutput current - - 100 mA
R1 bias resistor 1 (input) 1.54 2.20 2.86 k
R2/R1 bias resistor ratio 17 21 26
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 2 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code.
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT23; SOT323; SOT416
1 input (base)
2 GND (emitter)
3 output (collector)
SOT883
1 input (base)
2 GND (emitter)
3 output (collector)
006aaa144
12
3
sym003
3
2
1R1
R2
3
1
2
Transparent
top view
sym003
3
2
1R1
R2
Tabl e 4. Ordering information
Type number Package
Name Description Version
PDTA123JE SC-75 plastic surface-mounted package; 3 leads SOT416
PDT A123JM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 0.6 0.5 mm SOT883
PDTA123JT - plastic surface-mounted package; 3 leads SOT23
PDTA123JU SC-70 plastic surface-mounted package; 3 leads SOT323
Table 5. Marking codes
Type number Marking code[1]
PDTA123JE 27
PDTA123JM DG
PDTA123JT *23
PDTA123JU *43
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 3 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-ba s e vo ltage open collect or - 10 V
VIinput voltage
positive - +5 V
negative - 12 V
IOoutput current - 100 mA
ICM peak collector current single pulse; tp1ms - 100 mA
Ptot total power dissipation Tamb 25 C
PDTA123JE (SOT416) [1][2] -150mW
PDTA123JM (SOT883) [2][3] -250mW
PDTA123JT (SOT23) [1] -250mW
PDTA123JU (SOT323) [1] -200mW
Tjjunction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 4 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
(1) SOT23; FR4 PCB, standard footprint
SOT883; FR4 PCB with 70 m copper strip line, standard footprint
(2) SOT323; FR4 PCB, standard footprint
(3) SOT416; FR4 PCB, standard footprint
Fig 1. Power derating curves
Tamb (°C)
-75 17512525 75-25
006aac778
100
200
300
Ptot
(mW)
0
(1)
(2)
(3)
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction
to ambient in free air
PDTA123JE (SOT416) [1][2] --830K/W
PDTA123JM (SOT883) [2][3] --500K/W
PDTA123JT (SOT23) [1] --500K/W
PDTA123JU (SOT323) [1] --625K/W
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 5 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTA123 JE (SOT416); typical values
FR4 PCB, 70 m copper strip line
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTA123 JM (SOT883); typical values
006aac781
10-5 1010-2
10-4 102
10-1 tp (s)
10-3 103
1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75 0.5
0.33 0.2
0.1
0.05
0.02 0.01
0
006aac782
10-5 1010-2
10-4 102
10-1 tp (s)
10-3 103
1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75 0.5
0.33 0.2
0.1 0.05
0.02
0.01
0
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 6 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTA123 JT (SOT23); typical values
FR4 PCB, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTA123JU (SOT323); typical va lues
006aac779
10-5 1010-2
10-4 102
10-1 tp (s)
10-3 103
1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75 0.5
0.33 0.2
0.1
0.05
0.02 0.01
0
006aac780
10-5 1010-2
10-4 102
10-1 tp (s)
10-3 103
1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75 0.5
0.33 0.2
0.1
0.05
0.02 0.01
0
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 7 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
7. Characteristics
[1] Characteristics of built-in transistor.
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base
cut-off current VCB =50 V; I E=0A - - 100 nA
ICEO collector-emitter
cut-off current VCE =30 V; IB=0A - - 1A
VCE =30 V; IB=0A;
Tj= 150 C--5A
IEBO emitter-base
cut-off current VEB =5V; I
C=0A - - 180 A
hFE DC current gain VCE =5V; I
C=10 mA 100 - -
VCEsat collector-emitter
saturation voltage IC=5mA; I
B=0.25 mA - - 100 mV
VI(off) off-state input
voltage VCE =5V; I
C=100 A- 0.6 0.5 V
VI(on) on-state input
voltage VCE =0.3 V; IC=5mA 1.1 0.75 - V
R1 bias resistor 1 (input) 1.54 2.20 2.86 k
R2/R1 bias resistor ratio 17 21 26
Cccollector capacitance VCB =10 V; IE=i
e=0A;
f=1MHz --3pF
fTtransition frequency VCE =5V; I
C=10 mA;
f = 100 MHz [1] -180-MHz
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 8 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
VCE =5V
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =40 C
IC/IB=20
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =40 C
Fig 6. DC current gain as a function of collector
current; typical values Fig 7. Collec tor-emitter saturatio n vo ltage as a
function of collector current; typical values
VCE =0.3 V
(1) Tamb =40 C
(2) Tamb =25C
(3) Tamb = 100 C
VCE =5V
(1) Tamb =40 C
(2) Tamb =25C
(3) Tamb = 100 C
Fig 8. On-state input voltage as a function of
collector current; typical valu es Fig 9. Off-state input voltage as a function of
collector current; typical values
IC (mA)
-10-1 -102
-10-1
006aac814
102
10
103
hFE
1
(1)
(2)
(3)
006aac815
IC (mA)
-10-1 -102
-10-1
-10-1
-1
VCEsat
(V)
-10-2
(1)
(2)
(3)
006aac816
IC (mA)
-10-1 -102
-10-1
-1
-10
VI(on)
(V)
-10-1
(1)
(2)
(3)
006aac817
IC (mA)
-10-1 -10-1
-1
VI(off)
(V)
-10-1
(1)
(2)
(3)
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 9 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
f = 1 MHz; Tamb =25CV
CE =5V; T
amb =25C
Fig 10. Collector capacitan ce as a function of
collector-base voltage; typical values Fig 11. Transition frequency as a fu nc tio n of collector
current; typical values of built-in transistor
VCB (V)
0 -50-40-20 -30-10
006aac818
3
6
9
Cc
(pF)
0
006aac763
IC (mA)
-10-1 -102
-10-1
102
103
fT
(MHz)
10
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 10 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 12. Package outline PDTA123JE (SOT416/SC-75) Fig 13. Package outlin e PDTA12 3JM (SOT883/SC-101)
Fig 14. Package outline PDTA123JT (SOT23) Fig 15. Package outlin e PDTA12 3JU (SOT323/SC-7 0)
Table 9. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantit y
3000 10000
PDTA123JE SOT416 4 mm pitch, 8 mm tape and reel -115 -135
PDTA123JM SOT883 2 mm pitch, 8 mm tape and reel - -315
PDTA123JT SOT23 4 mm pitch, 8 mm tape and reel -215 -235
PDTA123JU SOT323 4 mm pitch, 8 mm tape and reel -115 -135
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 11 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
11. Soldering
Reflow soldering is the only recommended soldering method.
Fig 16. Reflow soldering footprint PDTA123JE (SOT416/SC-75)
Reflow soldering is the only recommended soldering method.
Fig 17. Reflow soldering footprint PDTA123JM (SOT883/SC-101)
solder lands
solder resist
occupied area
solder paste
sot416_fr
0.85
1.7
2.2
2
0.5
(3×)
0.6
(3×)
1
1.3
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot883_fr
1.3
0.3
0.6 0.7
0.4
0.9
0.3
(2×)
0.4
(2×)
0.25
(2×)
R0.05 (12×)
0.7
Dimensions in mm
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 12 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
Fig 18. Reflow soldering footprint PDTA123JT (SOT23)
Fig 19. Wave soldering footprint PDTA123JT (SOT23)
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 13 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
Fig 20. Reflow soldering footprint PDTA123JU (SOT323/SC-70)
Fig 21. Wave soldering footprint PDTA123JU (SOT323/SC-70)
solder lands
solder resist
occupied area
solder paste
sot323_fr
2.65
2.35 0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
sot323_fw
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 14 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTA123J_SER v.5 20111221 Product data sheet - PDTA123J_SERIES v.4
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Type numbers PDTA123JEF, PDTA123JK and PDTA123JS removed
•Section 1 “Product profile”: amended
•Figure 1 to 11: added
•Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined to
VI(off) off-state input voltage, ICEO updated and fT added
•Figure 12, 13, 14 and 15: superseded by minimized package outline drawings
•Section 8 “Test in f ormation”: added
•Section 10 “Packing information”: added
•Section 11 “Soldering”: added
•Section 13 “Legal information”: updated
PDTA123J_SERIES v.4 20040802 Product data sheet - PDTA123J_SERIES v.3
PDTA123J_SERIES v.3 20030414 Product specification - -
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 15 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short dat a sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full dat a
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conf lict with the short data sheet, the
full data sheet shall pre vail.
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
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Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an inf ormation
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental ,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
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malfunction of an NXP Semiconductors pro duct can reasonably be expected
to result in perso nal injury, death or severe property or environment al
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications and ther efore such inclu sion and/or use is at the cu stomer’s own
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Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
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Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
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NXP Semiconductors does not accept any liabili ty related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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conveyance or implication of any license under any copyri ghts, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the obj ective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
PDTA123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 21 December 2011 16 of 17
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PDTA123J series
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 December 2011
Document identifier: PDTA123J_SER
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Packing information . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
14 Contact information. . . . . . . . . . . . . . . . . . . . . 16
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17