Data Sheet
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.rohm.com
© 2011 R
OHM Co
., Ltd.
All r
ights reser
v
ed.
Schottky Barrier Diode
RB557W
Applications
Dimensions
(Unit : mm)
Land size figure
(Unit : mm)
General rectification
Features
1)Ultra small mold type. (EMD3)
2)Low VF
3)High reliability
Construction
Silicon epitaxial planar
Structure
Taping specifications
(Unit : mm)
Absolute maximum ratings
(Ta=25°C)
Symbol
Unit
V
R
V
Io
mA
I
FSM
mA
Tj
°C
Tstg
°C
Electrical characteristics
(Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
V
F
1
-
-
0.35
V
I
F
=10mA
V
F
2
-
-
0.49
V
I
F
=100mA
I
R
--
1
0
μ
A
V
R
=10V
Reverse current
Conditions
(*1) Rating of per diode
Parameter
Forward voltage
Junction temperature
125
Storage temperature
40 to
125
Average rectified forward current (*1)
100
Forward current surge peak (60Hz
・
1cyc) (*1)
500
Parameter
Limits
Reverse voltage (DC)
30
EMD3
0.
7
0.
5
0.
5
0.
7
0.7
0.
6
0.6
1.3
ROHM : EMD3
JEITA : SC-75A
JEDEC : SOT-416
dot
(y
ear week factor
y
(3)
1.6±
0.2
1.6±
0
.2
1.0±
0.1
0.8±0
.1
0.5
0.5
(2)
(1
)
0.15±
0.05
0.7±
0.1
0.55±
0.1
0.1Mi
n
0~0
.1
0.2±0.
1
-0.05
0.3±0.
1
0.05
4.
0±0
.1
2.0
±0.
05
φ1
.
5
5±0
.
1
0
3.
5±0.
05
1.7
5±0
.1
8.
0±0.
2
φ0.5±0
.1
1.
8±0
.2
0.3
±0.1
1.8±0
.1
5.5±0
.2
0.9±0
.2
0~0
.1
φ
1.5
0.1
0
1/3
2011.04 - Rev.A
www
.rohm.com
© 201
1 ROHM Co., Ltd.
All rights reserved.
Data Sheet
RB557W
FORWA
RD VOL
TAG
E:V
F(mV)
VF-I
F CH
ARACTE
RISTIC
S
F
ORWARD
C
U
RRENT:
I
F(mA)
REVERSE
CURRENT:IR(uA)
REVE
RSE
VOL
TAGE
:VR(V)
VR
-IR CH
AR
ACTERI
STICS
CAPACITANCE BETWEEN
TERMINALS:Ct(
p
F)
REVE
RSE
VOL
TAGE:
VR(V
)
VR-
Ct
CHA
RACT
ERI
STIC
S
VF DIS
PER
SION
MAP
FORWARD VOLTAGE:VF(m
V)
REVE
RSE CURRENT:IR(uA)
IR
DIS
PERSION
MA
P
CAPACITANCE BETWE
EN
TERMINALS:C
t(
pF)
Ct
DIS
PER
SIO
N MA
P
IFS
M D
ISR
ES
ION M
AP
PE
AK
SU
RGE
FORWARD CURRE
N
T:IFS
M(A)
PEA
K
S
UR
GE
FORWAR
D
CURREN
T:
IFSM(A)
NUMBER OF
CYCLE
S
IF
SM-CYCL
E C
HARAC
TERIST
ICS
PEA
K
S
UR
GE
FORWAR
D
CURREN
T:
IFSM(A)
TIME:
t(ms)
IFS
M-t
CHA
RA
CTER
IST
IC
S
TIME:
t(s)
Rth-t CH
ARACTE
RISTICS
TRANSIENT
THAERMAL
IMPEDANCE:Rth
(℃/W)
FORWARD POWER
DISS
IPAT
ION:Pf
(W)
AVERAG
E
RECTIF
IED
FORWAR
D CURREN
T:Io(A
)
Io-
Pf
CH
ARAC
TE
RIS
TICS
REVE
RSE POWER
DISSIP
ATION
:P
R
(W)
REVE
RSE
VOL
TAGE:
VR(V
)
VR-
P
R
CHARA
CTERISTIC
S
0.001
0.
01
0.1
1
10
100
1000
0
100
200
300
400
500
600
0.01
0.1
1
10
100
1000
10000
0
1
02
03
0
Ta=-25℃
Ta=125℃
Ta=25℃
Ta=75℃
1
10
100
0
5
10
15
20
f=1MHz
0
5
10
15
20
25
30
Ta=25℃
VR=10V
n=30pc
s
AVE:2.017uA
10
11
12
13
14
15
16
17
18
19
20
AVE:17.34pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
0
5
10
0.1
1
10
100
t
Ifsm
0
5
10
15
20
AVE:3.90A
8.3ms
If
sm
1cyc
0
5
10
1
10
100
8.3ms
Ifs
m
1cyc
8.3ms
0
0.02
0.04
0.06
0.08
0.1
00
.
1
0
.
2
Per diode
0
0.02
0.04
0.06
0.08
0.1
01
0
2
0
3
0
Per diode
1
10
100
1000
0.001
0.
1
10
1000
Rth(j-
a)
Rth(j-c)
1ms
IM=1mA
IF=10mA
300us
ti
me
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
250
260
270
280
290
300
Ta=25℃
IF=10mA
n=30pcs
AVE:270.2mV
DC
D=1/2
Sin(θ=180)
Sin(θ=180)
DC
D=1/2
Mounted on epo
xy
boa
rd
2/3
2011.04 - Rev.A
www
.rohm.com
© 201
1 ROHM Co., Ltd.
All rights reserved.
Data Sheet
RB557W
AM
BIENT
TEMPE
RATURE
:Ta(
℃)
Derating Curve゙(Io-Ta)
AVER
AG
E REC
TIFI
ED
FORWARD CURRE
N
T:Io(A)
AV
ERA
GE R
ECT
IFI
ED
FORWARD CURRENT:
I
o(A)
CASE
TEMPARA
TURE:Tc(
℃)
Deratin
g
C
urve゙(Io-Tc)
0
0.1
0.2
0.3
0
25
50
75
100
125
Per diode
0
0.1
0.2
0.3
0
25
50
75
100
125
Per diode
Sin(θ=180)
DC
D=1
/2
T
Tj=125℃
D=
t/
T
t
VR
Io
VR=15V
0A
0V
T
Tj=125℃
D=t/T
t
VR
Io
VR=15V
0A
0V
Sin(θ=180)
DC
D=1/2
3/3
2011.04 - Rev.A
R1
120
A
www
.rohm.com
© 201
1 ROHM Co., Ltd.
All rights reserved.
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