NEC's NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 n0.05 0.3 3 0.2+0.1 n0.05 LOW PUSHING FACTOR 0.35 * 0.7 LOW PHASE NOISE 1.0+0.1 n0.05 IDEAL FOR 3 GHz OSCILLATORS * 0.70.05 E7 * 0.15+0.1 n0.05 NEW MINIATURE M13 PACKAGE: - Small transistor outline - 1.0 X 0.5 X 0.5 mm - Low profile / 0.50 mm package height - Flat lead style for better RF performance 0.35 * 0.1 0.125+0.1 n0.05 0.1 0.50.05 NEC's NE851M13 transistor is designed for oscillator applications up to 3 GHz. The NE851M13 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. 0.15+0.1 n0.05 DESCRIPTION 0.2 0.2 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS UNITS MIN TYP MAX GHz GHz 3.0 5.0 4.5 6.5 - Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz dB dB 3.0 4.5 4.0 5.5 - - NF Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz dB - 1.9 2.5 Capacitance3 fT fT |S21E|2 |S21E|2 PARAMETERS AND CONDITIONS NE851M13 2SC5801 M13 Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz CRE Reverse Transfer pF - 0.6 0.8 ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz nA - - 600 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA hFE DC Current Gain2 at VCE = 1 V, IC = 5 mA - - 600 100 120 145 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Collector to base capacitance when the emitter is grounded California Eastern Laboratories NE851M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS PARAMETERS UNITS PART NUMBER QUANTITY NE851M13-T3-A 10 k pcs./reel VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 5.5 VEBO Emitter to Base Voltage V 1.5 Collector Current mA 100 PT2 Total Power Dissipation mW 140 TJ Junction Temperature C 150 TSTG Storage Temperature C -65 to +150 IC ORDERING INFORMATION RATINGS Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.0 mm glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance, Cre (pF) Total Power Dissipation, Ptot (mW) 160 REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Mounted on Glass Epoxy PCB (1.08 cm2 * 1.0mm(t) ) 140 120 100 80 60 40 20 0 25 50 75 100 125 1.0 f = 1 MHz 0.8 0.6 0.4 0.2 0 150 1 2 3 4 5 6 7 8 9 Collector to Base Voltage, VCB (V) Ambient Temperature, TA (C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 60 Collector Current, IC (mA) Collector Current, IC (mA) VCE = 2 V 80 60 40 20 0 400 A 50 360 A 320 A 40 280 A 240 A 30 200 A 160 A 20 120 A 80 A 10 IB = 40 A 0.2 0.4 0.6 0.8 Base to Emitter Voltage, VBE (V) 1.0 0 1 2 3 4 5 6 Collector to Emitter Voltage, VCE (V) 7 NE851M13 TYPICAL PERFORMANCE CURVES (TA = 25C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 VCE = 1 V f = 2 GHz Gain Bandwidth Product, fT (GHz) Gain Bandwidth Product, fT (GHz) 10 8 6 4 2 10 6 4 2 100 Collector Current, IC (mA) INSERTION POWER GAIN vs. FREQUENCY INSERTION POWER GAIN vs. FREQUENCY 35 VCE = 1 V IC = 5 mA 30 25 20 15 10 5 VCE = 2 V IC = 5 mA 30 25 20 15 10 5 0 0.1 10 1 1 10 Frequency, f (GHz) Frequency, f (GHz) INSERTION POWER GAIN vs. FREQUENCY INSERTION POWER GAIN vs. FREQUENCY 35 35 Insertion Power Gain, |S21e|2 (dB) VCE = 1 V IC = 15 mA 30 25 20 15 10 5 0 0.1 10 Collector Current, IC (mA) 35 0 0.1 1 100 Insertion Power Gain, |S21e|2 (dB) 1 Insertion Power Gain, |S21e|2 (dB) f = 2 GHz 8 0 0 Insertion Power Gain, |S21e|2 (dB) VCE = 2 V 1 Frequency, f (GHz) 10 VCE = 2 V IC = 15 mA 30 25 20 15 10 5 0 0.1 1 Frequency, f (GHz) 10 NE851M13 TYPICAL PERFORMANCE CURVES (TA = 25C) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 MAG 15 2 |S21e| 10 5 VCE = 1 V f = 1 GHz 0 1 15 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) MSG 10 15 |S21e|2 10 5 100 VCE = 2 V f = 1 GHz 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN and MAG vs. COLLECTOR CURRENT INSERTION POWER GAIN and MAG vs. COLLECTOR CURRENT 15 VCE = 1 V f = 2 GHz MAG 10 2 |S21e| 5 0 1 10 100 VCE = 2 V f = 2 GHz 10 MAG 5 |S21e|2 0 -5 -5 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 10 10 VCE = 1 V f = 4 GHz Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) MAG MSG 0 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) 20 MAG MSG 5 0 2 |S21e| -5 VCE = 2 V f = 4 GHz MSG MAG 5 0 2 |S21e| -5 -10 -10 1 10 Collector Current, IC (mA) 100 1 10 Collector Current, IC (mA) 100 NE851M13 TYPICAL PERFORMANCE CURVES (TA = 25C) NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT 18 6 VCE = 1 V f = 1 GHz 4 12 3 9 2 6 NF 1 0 1 10 5 Noise Figure, NF (dB) 4 12 3 9 2 6 3 1 0 100 0 1 6 NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT 18 6 18 4 12 Ga 9 3 6 2 NF 1 0 1 10 5 15 4 12 Ga 3 9 2 3 1 0 100 0 6 NF 3 1 0 100 10 Collector Current, IC (mA) Collector Current, IC (mA) OUTPUT POWER AND COLLECTOR CURRENT vs. INPUT POWER OUTPUT POWER AND COLLECTOR CURRENT vs. INPUT POWER 15 80 25 70 20 60 10 50 Pout 5 40 0 30 20 -5 IC 10 -10 Output Power, POUT (dBm) VCE = 2 V, f = 1 GHz Icq = 5 mA (RF OFF) 80 VCE = 2 V, f = 2 GHz Icq = 5 mA (RF OFF) 70 15 60 10 50 5 40 Pout 0 30 -5 20 -10 10 IC -15 -20 0 -15 -10 -5 0 Input Power, PIN (dBm) 5 10 Associated Gain, Ga (dB) 15 Noise Figure, NF (dB) 5 Associated Gain, Ga (dB) VCE = 2 V f = 2 GHz Collector Current, IC (mA) Noise Figure, NF (dB) VCE = 1 V f = 2 GHz Output Power, POUT (dBm) 0 100 10 Collector Current, IC (mA) NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 3 NF Collector Current, IC (mA) 25 15 Ga -15 -20 -15 -10 -5 0 Input Power, PIN (dBm) 5 10 0 Collector Current, IC (mA) Noise Figure, NF (dB) Ga Associated Gain, Ga (dB) 15 5 19 VCE = 2 V f = 1 GHz Associated Gain, Ga (dB) 6 NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT NE851M13 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 +90 j100 j25 +135 +45 S 11 j10 0 S12 S21 10 25 100 50 2 +180 0 4 6 8 1 0 2 S2 -j10 -135 -45 -j100 -j25 -j50 -90 0.100 to 4.000 GHz by 0.050 0.100 to 4.000GHz by 0.050 NE851M13 VC = 1 V, IC = 5 mA FREQUENCY S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 2.000 2.500 3.000 3.500 4.000 0.831 0.789 0.765 0.750 0.706 0.699 0.697 0.696 0.697 0.697 0.704 0.712 0.724 0.732 0.743 0.746 -46.49 -81.92 -106.07 -122.16 -133.99 -142.06 -148.74 -153.88 -158.33 -161.97 -174.56 176.89 169.88 163.33 156.42 150.06 13.764 11.335 9.135 7.476 6.157 5.251 4.576 4.062 3.646 3.308 2.262 1.721 1.391 1.166 1.002 0.879 152.54 132.55 118.99 109.52 103.05 97.76 93.13 89.34 85.83 82.71 69.58 59.12 50.09 42.52 36.21 31.47 0.036 0.058 0.069 0.075 0.077 0.078 0.080 0.081 0.082 0.082 0.087 0.098 0.118 0.147 0.182 0.222 66.4 50.3 40.9 35.5 33.0 31.6 31.0 31.4 32.0 33.1 41.9 53.1 62.5 68.6 71.3 71.8 0.901 0.742 0.618 0.533 0.460 0.414 0.382 0.363 0.350 0.339 0.328 0.342 0.376 0.415 0.458 0.498 K MAG1 0.068 0.134 0.192 0.250 0.394 0.478 0.551 0.619 0.682 0.751 1.012 1.152 1.122 1.042 0.939 0.877 25.83 22.93 21.23 20.01 19.04 18.26 17.59 17.02 16.51 16.05 13.47 10.09 8.58 7.75 7.41 5.98 ANG -23.1 -38.6 -47.8 -53.5 -53.3 -55.7 -58.2 -59.5 -61.5 -63.3 -74.5 -86.9 -98.8 -109.4 -117.8 -125.3 (dB) Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE851M13 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 +90 j100 j25 S21 S12 +135 S11 j10 0 +45 10 25 100 50 0 2 +180 4 6 8 1 0 2 S2 -j10 -135 -j100 -j25 -45 -j50 -90 0.100 to 4.000GHz by 0.050 0.100 to 4.000GHz by 0.050 NE851M13 VC = 2 V, IC = 10 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 2.000 2.500 3.000 3.500 4.000 S11 MAG 0.718 0.689 0.680 0.677 0.648 0.645 0.647 0.648 0.651 0.652 0.661 0.669 0.679 0.687 0.696 0.699 S21 ANG -62.67 -102.19 -124.30 -137.54 -147.55 -153.87 -158.99 -162.97 -166.43 -169.32 -179.34 173.47 167.37 161.58 155.30 149.56 MAG 22.758 16.867 12.737 10.068 8.180 6.913 5.980 5.282 4.725 4.275 2.907 2.212 1.795 1.515 1.313 1.161 S12 ANG 144.89 123.83 111.69 103.82 98.85 94.59 90.88 87.80 84.93 82.38 71.36 62.32 54.17 47.00 40.58 35.18 MAG 0.029 0.042 0.048 0.052 0.055 0.057 0.060 0.063 0.066 0.069 0.087 0.109 0.135 0.164 0.197 0.232 S22 ANG 61.8 47.7 42.0 40.1 40.8 41.9 43.5 45.4 47.2 49.2 57.6 63.9 67.6 69.6 70.1 69.6 MAG 0.823 0.615 0.486 0.408 0.335 0.296 0.270 0.253 0.243 0.234 0.226 0.241 0.274 0.311 0.353 0.393 ANG -32.5 -50.6 -60.3 -66.1 -65.2 -67.9 -70.9 -72.1 -74.0 -75.8 -86.3 -97.3 -107.0 -115.5 -121.7 -127.3 K MAG1 0.135 0.239 0.334 0.423 0.582 0.679 0.755 0.819 0.871 0.922 1.059 1.097 1.061 1.013 0.947 0.901 (dB) 28.99 26.05 24.22 22.85 21.74 20.81 19.98 19.23 18.55 17.92 13.75 11.18 9.73 8.96 8.24 6.99 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE851M13 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 +90 j100 j25 S21 S12 +135 S11 j10 0 +45 10 25 100 50 0 2 +180 4 6 8 1 0 2 S2 -j10 -135 -j100 -j25 -45 -j50 -90 0.100 to 4.000GHz by 0.050 0.100 to 4.000GHz by 0.050 NE851M13 VC = 3 V, IC = 20 mA FREQUENCY S11 S21 GHz MAG ANG MAG 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 2.000 2.500 3.000 3.500 4.000 0.592 0.610 0.620 0.626 0.610 0.610 0.613 0.615 0.620 0.621 0.632 0.639 0.648 0.654 0.662 0.664 -86.11 -124.37 -141.71 -151.34 -159.31 -163.96 -167.68 -170.58 -173.15 -175.39 176.71 170.54 165.15 159.90 154.05 148.76 33.025 21.656 15.554 12.032 9.710 8.162 7.032 6.194 5.529 4.996 3.387 2.578 2.096 1.775 1.546 1.376 S12 S22 ANG MAG ANG MAG 135.40 115.31 105.23 98.91 95.19 91.77 88.75 86.21 83.82 81.67 72.14 64.13 56.72 50.03 43.87 38.44 0.022 0.031 0.036 0.040 0.044 0.048 0.052 0.057 0.062 0.067 0.092 0.119 0.148 0.178 0.210 0.243 57.5 48.3 47.6 49.1 52.1 54.4 56.5 58.6 60.3 61.8 66.6 69.0 69.7 69.5 68.7 67.5 0.710 0.483 0.370 0.309 0.241 0.212 0.194 0.181 0.173 0.167 0.166 0.183 0.214 0.248 0.285 0.321 K MAG1 0.243 0.402 0.532 0.635 0.781 0.862 0.917 0.956 0.983 1.010 1.059 1.064 1.035 1.005 0.963 0.929 31.86 28.50 26.41 24.80 23.47 22.32 21.29 20.36 19.53 18.15 14.16 11.79 10.35 9.56 8.68 7.54 ANG -44.7 -65.2 -75.9 -82.6 -83.3 -87.6 -92.2 -94.3 -96.9 -99.4 -109.9 -118.5 -124.5 -129.5 -132.5 -135.5 (dB) Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE851M13 NONLINEAR MODEL SCHEMATIC CCBPKG 0.05 pF CCB 0.01 pF LBPKG LB 0.05 nH 0.25 nH Base LCPKG 0.05 nH Collector CCE Q1 0.25 pF LE 0.45 nH CCEPKG 0.05 pF LEPKG 0.05 nH Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 Parameters Q1 IS 137e-18 MJC 0.14 BF 166 XCJC 0.5 NF 0.9871 CJS 0 VAF 20.4 VJS 0.75 IKF 50 MJS 0 ISE 80.4e-15 FC 0.55 NE 2.4 TF 15e-12 0.1 BR 28.7 XTF NR 0.9889 VTF 2 VAR 2.7 ITF 0.03 IKR 0.021 PTF 0 ISC 532e-18 TR 1.0e-9 NC 1.28 EG 1.11 RE 0.45 XTB 0 RB 4 XTI 3 RBM 1 KF 170e-15 IRB 0 AF 1.65 RC 1.7 CJE 2.4e-12 VJE 0.87 MJE 0.34 CJC 0.65e-12 VJC 0.52 ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX NE851M13 0.01 pF 0.25 pF 0.25 nH 0.45 nH 0.05 pF 0.05 pF 0.05 nH 0.05 nH 0.05 nH MODEL TEST CONDITIONS Frequency: 0.1 to 5.0 GHz Bias: VCE = 1 V to 4 V, IC = 1 mA to 40 mA Date: 09/2001 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 01/27/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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