MITSUBISHI Nch POWER MOSFET FS10AS-3 HIGH-SPEED SWITCHING USE FS10AS-3 OUTLINE DRAWING Dimensions in mm 6.5 = 0.5204 { 0+0.2 % eee by | iss , Lee [fe S| y { ~{ . LI H . 1284 Zz! zt = &> IS Lo zn 3 > O.9MAX, |||" 0.5202 oo" 23 | 23 08 T) GATE 10V DRIVE 2 DRAIN @ SOURCE QVOSS cree cere cere eee ene e tee eee eee e eens 150V G ORAIN ers (ON) (MAX) Wee kee etme tween e eee t tee 170mQ DUD cere cen rere eee ete e ee rete et amet e nent eetee 10A @ Integrated Fast Recovery Diode (TYP.) --:-- 100ns MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (Te = 25C) Symbol Parameter Conditions Ratings Unit Voss Drain-source voltage Vas = 0V 150 Vv Vass Gate-source voltage Vos = OV +20 Vv lo Drain current 10 A jom Drain current (Pulsed) 40 A fer Avalanche drain current (Pulsed) | L = 1004H 10 A Is Source current 10 A Ism Source current (Pulsed) 40 A PD Maximum power dissipation 35 Ww Teh Channel temperature 55 ~ +150 C Tstg Storage temperature 55 ~ +150 C _ Weight Typical value 0.26 g 2 - 1006 MITSUBISHI ae ELECTRIC ELECTRICAL CHARACTERISTICS (Tch = 25C) MITSUBISHI Nch POWER MOSFET FS10AS-3 HIGH-SPEED SWITCHING USE Symbol Parameter Test conditions - Limits Unit Min. Typ. Max. V (BR) DSS | Drain-source breakdown voltage | lo = 1mA, Vos = OV 150 _ _ v lass Gate leakage current VG@s = +20V, VDS = OV _ _ +0.1 HA Ipss Drain current Vbs = 150V, Vas = 0V _ 0.1 mA Vasith) | Gate-source threshold voltage lo= ImA, Vos = 10V 2.0 3.0 40 Vv TDS (ON) | Drain-source on-state resistance | Ip = 5A, Vas = 10V 122 170 moQ VDS (ON) | Drain-source on-state voltage | ID = 5A, VGS = 10V _ 0.61 0.85 Vv I yts | Forward transfer admittance _| [0 = 5A, VoS = 10V _ 12 _ s Ciss Input capacitance 1250 _ pF Cass Output capacitance VDS = 10V, VGS = OV, f = 1MHz 175 pF Crss Reverse transfer capacitance 75 _ pF td (on) Turn-on delay time _ 25 _ ns te Rise time __ Von = 80V, ID = SA, VGS = 10V, RGEN = Ras = 500 = 30 = ns ta {off} Turn-off delay time = 60 _ ns tt Fail time _ 34 _ ns Vsb Source-drain voltage Is = 5A, Vas = OV 1.0 1.5 Vv Rith (ch-c) | Thermal resistance Channel to case _ _ 3.57 CAN tr Reverse recovery time Is = 10A, dis/dt = 100A/us _ 100 ~ ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 50 3 2 = 102 2 40 <= 7 a a 38 3 5 3 2 = Gi = = 10% ao s 7 20 5 5 e z 3 <x 2 w a 3 10 5 100 ims a 7 Tc = 25C 10ms 5 Single Puise 5 50 100 160 200 3, 3.57101 23 57102 23 57103 2 CASE TEMPERATURE Te (C) DRAIN-SOURCE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 0 Vas = 20V 10V 7V 6V 5 Vas = 20V 10V 7V 6V To = 26C Te = 25C Pulse Test Pulse Test <= 8 z 4 2 a E b 3 a f iva fr g s a 4 So 2 < z < < & 2 5 1 0 0 0 04 0.8 1.2 1.6 2.0 0 0.2 0.4 0:6 0.8 1.0 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2 - 1007 ELECTRIC DRAIN-SOURCE ON-STATE CAPACITANCE Ciss, Coss, Crss (pF) VOLTAGE. Vos (ON) (V) DRAIN CURRENT Ip (A) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) Te = 25C ise Test rat Pu 0 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) To = 25C Vos = 10V Pulse Test 0 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) CAPACITANCE V8. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 3 2 163 7 5 3 2 102 7 5 3h Tch = 25C 2} = IMHz Vas = OV 101 3.57109 23 57107 23 57102 23 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE ON-STATE RESISTANCE 10s (ON) (m2) FORWARD TRANSFER ADMITTANCE | yis /(S) SWITCHING TIME (ns) MITSUBISHI Nch POWER MOSFET FS10AS-3 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 Toh = 25C Pulse Test 160 Vas = 10N | 120 80 40 0 3 5710 23 710' 23 57102 23 DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 103 Vos = 10V Pulse Test nm w Bo NS NR 10) Ny whos 101 1009 20345 710' 2 345 7102 DRAIN CURRENT Ip {A} SWITCHING CHARACTERISTICS (TYPICAL) 3 10 To = 25C 7 Vob = 80V 5 Vas = 10V 3 RaeN = Res = 500 2 102 7 5 4 3 2 fd(ors 10! 1009 2345 7101 2 345 7102 DRAIN CURRENT td (A) ate MITSUBISHI ELECTRIC DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (tC) DRAIN-SOURCE ON-STATE RESISTANCE rds (ON) (25C) DRAIN-SQURCE BREAKDOWN VOLTAGE V (ar) oss (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (ar) pss (25C) GATE-SOURCE VOLTAGE Vas (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 0 Teh = 25C ID = 10A 16 12 ~ 2 pe wOhON m wronn~n S 10-1 0.4 0 10 20 Vos = 50V s0Vv 100V: 30 40 50 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 10V to = 1/210 Pulse Test 50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Ves = 0V ID = 1mA -50 0 50 100 = 150 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE = Zin (chc) CC/W) SOURCE CURRENT is (A) MITSUBISHI Nch POWER MOSFET FS10AS-3 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 Vas = 0V Puise Test 16 nt aH Te = 126C 25C 9 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE Vso (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vos = 10V Ip=1mA a ond On I> a= We zg We Ow co Of 23 Ww > a oO 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 103 7 S1D=1.0 3 0.5 10 7 5 3 2 Ppa 10-1 tw Z ea 2 3 T 2 10 10-423 5710-323 5710223 5710723 5710 23 5710123 5710? PULSE WIDTH tw (s) MITSUBISHI ELECTRIC 2 - 1009