AOD472 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD472 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD472 is Pb-free (meets ROHS & Sony 259 specifications). AOD472L is a Green Product ordering option. AOD472 and AOD472L are electrically identical. VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <6 m (VGS = 10V) RDS(ON) <9.5 m (VGS = 4.5V) 193 18 TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25C Avalanche Current C C Repetitive avalanche energy L=0.3mH C TC=25C Power Dissipation B A 20 V Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient B Maximum Junction-to-Case Alpha & Omega Semiconductor, Ltd. 150 IAR 30 A EAR 135 mJ 50 50 3 W 2.1 TJ, TSTG -55 to 175 Symbol t 10s Steady-State Steady-State W 25 PDSM TA=70C A ID IDM PD TC=100C TA=25C Power Dissipation Units V 50 TC=100C Pulsed Drain Current Maximum 25 RJA RJC Typ 15 41 2.1 C Max 20 50 3 Units C/W C/W C/W AOD472 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions ID=250uA, VGS=0V Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250A ID(ON) On state drain current VGS=10V, VDS=5V Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge nA 2.5 V 5 6 150 A 7.5 7.6 49 DYNAMIC PARAMETERS Ciss Input Capacitance Coss 100 VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current A 1.4 VGS=4.5V, ID=20A VSD IS V 5 1 TJ=125C Forward Transconductance Units 1 VGS=10V, ID=30A gFS Max 25 TJ=55C VGS(th) Static Drain-Source On-Resistance Typ VDS=20V, VGS=0V IGSS RDS(ON) Min 0.74 2050 VGS=0V, VDS=12.5V, f=1MHz m 9.5 S 1 V 50 A 2460 pF 485 pF 280 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=20A pF 0.86 1.5 34 41 nC 17 22 nC Qgs Gate Source Charge 5 nC Qgd Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time 11 ns tD(off) Turn-Off DelayTime 27 ns tf Turn-Off Fall Time 8 ns VGS=10V, VDS=12.5V, RL=0.68, RGEN=3 trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/s 30 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s 19 36 ns nC A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev1: March 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD472 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 60 10V 6V 50 4.5V 100 VDS=5V ID(A) ID (A) 40 3.5V 50 30 125C 3.0V 494 692 10 VGS=2.5 0 593 830 0 0 1 2 3 4 5 1 2 3 10 5 193 18 Normalized On-Resistance 1.8 8 VGS=4.5V 6 VGS=10V 4 4 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics RDS(ON) (m) 25C 1.4 20 1.6 VGS=10V, 20A 1.4 1.2 VGS=4.5V, 20A 1 2 0 10 20 30 40 50 0.8 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 59 100 142 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 100 12 10 ID=20A 10 125C 1 IS (A) RDS(ON) (m) 25 8 125C 0.1 0.01 25C 0.001 6 0.0001 25C 0.00001 4 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD472 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 2500 VDS=12.5V ID=20A Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 2000 1500 1.4 1000 Coss 0 5 10 15 20 25 30 35 40 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 200 TJ(Max)=175C, TC=25C 160 10s 100 DC Power (W) 100s RDS(ON) limited 25 193 18 1000 10 593 830 Crss 0 0 ID (Amps) 494 692 500 1ms 1 TJ(Max)=175C TC=25C 120 80 40 0.1 0.1 1 10 100 VDS (Volts) 0 0.0001 0.001 0.01 59 0.1 142 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD472 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 Power Dissipation (W) ID(A), Peak Avalanche Current 60 TA=25C 40 30 20 10 50 40 30 1.4 20 494 692 10 0 0.00001 0.0001 0.001 0 25 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 50 75 100 125 150 60 50 50 40 40 30 193 18 TA=25C 30 20 20 10 10 0 0.01 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 0.1 1 59 142 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance 175 TCASE (C) Figure 13: Power De-rating (Note B) Power (W) Current rating ID(A) 593 830 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W PD Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000