December 2008 Rev 2 1/9
9
DMV1500HD
Damper + modulation diode for CRT TV
Features
■Full kit in one package
■High breakdown voltage capability
■Very fast recovery diode
■Specified turn on switching characteristics
■Low static and peak forward voltage drop for
low dissipation
■Insulated version:
– Insulated voltage = 2000 VRMS
– Capacitance = 7 pF
■Planar technology allowing high quality and
best electrical characteristics
■Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600 V
technology as modulation
Description
High voltage semiconductor especially designed
for horizontal deflection stage in standard and
high resolution video display with E/W correction.
The insulated TO-220FPAB package includes
both the damper diode and the modulation diode,
thanks to a dedicated design.
Assembled on automated line, it offers very low
dispersion values on insulating and thermal
performanes.
Table 1. Device summary
Symbol Damper Modulation
IF(AV) 6 A 3 A
IFpeak (max) 12 A 12 A
VRRM 1500 V 600 V
trr (typ) 150 ns 60 ns
VF (typ) 1.0 V 1.0 V
VFP (typ) 21 V 5 V
TO-220FPAB
DMV1500HDFD
TO-220FPAB FD6 bending
DMV1500HDFD6 (optional)
Damper
123
Modulation
123
1
2
3
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Characteristics DMV1500HD
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1 Characteristics
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
Damper Modulation
VRRM Repetitive peak reverse voltage 1500 600 V
IFpeak Peak working forward current F = 56 kHz 12 12 A
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 50 A
Tstg Storage temperature range -40 to +150 °C
TjMaximum operating junction temperature 150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
Rth(j-c) Junction to case thermal resistance 3.8 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions
Value
Unit
Tj = 25 °C Tj = 125 °C
Typ. Max. Typ. Max.
IR (1) Reverse leakage current Damper VR = 1500 V 100 100 1000 µA
Modulation VR = 600 V 20 3 50
VF (2) Forward voltage drop Damper IF = 6 A 1.5 2.3 1.25 1.7 V
Modulation IF = 3 A 1.8 1.1 1.4
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses of the damper and modulation diodes use the following equations :
Damper: P = 1.05 x IF(AV) + 0.05 x IF2(RMS)
Modulation: P = 0.89 x IF(AV) + 0.055 x IF2(RMS)
Table 5. Recovery characteristics
Symbol Parameter Test conditions
Value
Unit
Damper Modulation
Typ. Max. Typ. Max.
trr Reverse recovery time
IF = 100 mA
IR =100 mA
IRR = 10 mA
Tj = 25 °C 1000 250 400
ns
IF = 1 A
dIF/dt = -50
A/µs VR =30 V
Tj = 25 °C 150 250 60 85
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DMV1500HD Characteristics
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Table 6. Turn-on switching characteristics
Symbol Parameter Test conditions Value Unit
Typ. Max.
tfr Forward recovery time
Damper
IF = 6 A
dIF/dt = 80 A/µs
VFR = 3 V
Tj = 100 °C 330 470
ns
Modulation
IF = 6 A
dIF/dt = 80 A/µs
VFR = 2 V
Tj = 100 °C 85 125
VFP Peak forward voltage
Damper IF = 6 A
dIF/dt = 80 A/µs Tj = 100 °C 21 29
V
Modulation IF = 6 A
dIF/dt = 80 A/µs Tj = 100 °C 5 7.5
Figure 1. Power dissipation vs. peak forward
current (triangular waveform,
δ = 0.45)
Figure 2. Average forward current vs.
ambient temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0123456789101112
P (W)
F(AV)
DAMPER diode
MODULATION diode
I (A)
P
0
1
2
3
4
5
6
7
0 25 50 75 100 125 150
I (A)
F(AV)
DAMPER diode
MODULATION diode
R=
th(j-a)
R
th(j-c)
T (°C)
amb
T
δ
=tp/T tp
Figure 3. Forward voltage drop vs. forward
current (damper diode)
Figure 4. Forward voltage drop vs. forward
current (modulation diode)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
I (A)
FM
V (V)
FM
T =125°C
(typical values)
j
T =25°C
(maximum values)
j
T =125°C
(maximum values)
j
0
1
2
3
4
5
6
7
8
9
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I (A)
FM
V (V)
FM
T =125°C
(typical values)
j
T =25°C
(maximum values)
j
T =125°C
(maximum values)
j
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Figure 5. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 6. Reverse recovery charges vs.
dIF/dt (damper diode, typical
values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Z/R
th(j-c) th(j-c)
t (s)
p
DAMPER diode
MODULATION diode
Single pulse 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.1 1.0 10.0 100.0
Q (µC)
rr
dI /dt(A/µs)
F
I=
T =125°C
F
j
I
P
Figure 7. Reverse recovery charges vs.
dIF/dt (modulation diode, typical
values)
Figure 8. Peak reverse recovery current vs.
dIF/dt (damper diode, typical
values)
0
50
100
150
200
250
300
0.1 1.0 10.0 100.0
Q (nC)
rr
dI /dt(A/µs)
F
I=
T =125°C
F
j
I
P
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.1 1.0 10.0
I (A)
RM
dI /dt(A/µs)
F
I=
T =125°C
F
j
IP
Figure 9. Peak reverse recovery current vs.
dIF/dt (modulation diode, typical
values)
Figure 10. Transient peak forward voltage vs.
dIF/dt (damper diode, typical
values)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.1 1.0 10.0 100.0
I (A)
RM
dI /dt(A/µs)
F
I=
T =125°C
F
j
I
P
0
5
10
15
20
25
30
35
40
0 20 40 60 80 100 120 140 160 180 200
V (V)
FP
dI /dt(A/µs)
F
I=
T =100°C
F
j
IP
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Figure 15. Junction capacitance vs. reverse voltage applied (typical values)
Figure 11. Transient peak forward voltage vs.
dIF/dt (modulation diode, typical
values)
Figure 12. Forward recovery time vs. dIF/dt
(damper diode, typical values)
Figure 13. Forward recovery time vs. dIF/dt
(modulation diode, typical values)
Figure 14. Relative variation of dynamic
parameters vs. junction
temperature
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
V (V)
FP
dI /dt(A/µs)
F
I=
T =100°C
F
j
IP
0
50
100
150
200
250
300
350
400
450
500
550
600
0 20 40 60 80 100 120 140 160 180 200
t (ns)
fr
dI /dt(A/µs)
F
I=
T =100°C
F
j
V =3.0V
FR
IP
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160 180 200
t (ns)
fr
dI /dt(A/µs)
F
I=
T =100°C
F
j
I
V =2.0V
P
FR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
25 50 75 100 125
Q
RR
T (°C)
j
V
FP
I
RM
I,V,Q [T]/
RM FP RR j I , V , Q [T =125°C]
RM FP RR j
1
10
100
1 10 100 1000
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
DAMPER diode
MODULATION diode
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Package information DMV1500HD
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2 Package information
●Epoxy meets UL94,V0
●Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com
Table 7. TO-220FPAB dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.50 0.045 0.059
F2 1.15 1.50 0.045 0.059
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
H
A
B
Dia
L7
L6
L5
F1
F2
F
D
E
L4
G1
G
L2
L3
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Figure 16. TO-220FPAB FD6 PCB layout (typical dimensions in millimeters)
Table 8. TO-220FPAB F6 dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.9 0.173 0.192
B 2.5 2.9 0.098 0.114
D 2.45 2.75 0.096 0.108
E 0.4 0.7 0.016 0.028
F 0.6 1 0.024 0.039
G 4.8 5.3 0.195 0.205
G1 2.2 2.95 0.094 0.106
H 10 10.7 0.394 0.421
L2 12.7 12.8 0.500 0.504
L3 4.8 Typ. 0.189 Typ.
L4 3.4 4.8 0.150 0.165
L5 2.9 Typ. 0.114 Typ.
L6 15.8 16.4 0.622 0.646
L7 9 9.9 0.354 0.390
M1 3.75 Typ. 0.148 Typ.
M2 7 8 0.276 0.315
R 1 Typ. 0.039 Typ.
Dia. 2.9 3.5 0.114 0.138
L7
H
A
B
Dia
DL4
L5
L3
E
R
M2
M1
L2
G1
F
G
L6
7.9
2.54
2.2
7.5
1.0
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Ordering information DMV1500HD
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3 Ordering information
4 Revision history
Table 9. Ordering information
Order code Marking Package Weight Base qty Delivery mode
DMV1500HDFD DMV1500HD TO-220FPAB 2.4 g 50 Tube
DMV1500HDFD6 DMV1500HD TO-220FPAB F6 2.4 g 45 Tube
Table 10. Document revision history
Date Revision Changes
16-Mar-2005 1 Initial release.
02-Dec-2008 2 Reformatted to current standards. Updated ECOPACK statement.
Updated dimension illustration for TO-220FPAB FD6 in Ta bl e 8 .
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