©2005 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
BC517 Rev. A
BC517 NP N Darlington Transistor
January 2005
BC517
NPN Darlington Transistor
• This device is designed for applications requiring extremely high current gain at currents to 1.0A .
• Sourced from process 05.
Absolute Maximum Ratings *
T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
= 25°C unless otherwise noted
Thermal Characteristics
T
a
= 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base V oltage 40 V
V
EBO
Emitter-Base Voltage 10 V
I
C
Collector Current - Continuous 1.2 A
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Conditions Min. Max Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
= 2.0mA, I
B
= 0 30 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10µA, I
E
= 0 40 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 100nA, I
C
= 0 10 V
I
CBO
Collector Cut-off Current V
CB
= 30V, I
E
= 0 100 nA
On Characteristics *
h
FE
DC Current Gain V
CE
= 2.0V, I
C
= 20mA 30,000
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 100mA, I
B
= 0.1mA 1 V
V
BE(on)
Base-Emitter On Voltage I
C
= 10mA, V
CE
= 5.0V 1.4 V
Symbol Parameter Value Units
P
D
Total Device Dissipation
Derate above 25°C625
5.0 mW
mW/°C
R
θJC
Thermal Resistance, Junction to Cas e 83.3 °C/W
R
θJA
Thermal Resistance, Junction to A mbient 200 °C/W
1. Collector 2. Base 3. Emitter
TO-92
1
2www.fairchildsemi.com
BC517 Rev. A
BC517 NP N Darlington Transistor
Mechanical Dimens ions
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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