CM20MD3-12H - Mitsubishi Electric Semiconductor

Feb.1999

CM20MD3-12H

NCIRCUIT DIAGRAM

E

R

S

A

KP1

GU

EU

U

GV

EV

V

GW

EW

W

TERMINAL

MAIN CIRCUIT

t = 0.5

1

2

(30°)

TERMINAL

CONTROL CIRCUIT

t = 0.5

0.8

MARKING(PRODUCT’S NAME AND LOT NUMBER)

LABEL

GW

NOT CONNECTED

E

GV

GU

EW

GW

EV

GV

GU

EU

NOT CONNECTED

P1K

RSA UVWN

5

32

8 8 12.5 12.5 8 8

80

±0.3

90

±0.5

9

±0.1

64

±0.5

53

±0.5

26.5

±0.3

26.5

±0.3

9

±0.1

16.5

54

2.54

7.62

2.54

7.62

2.54

7.62

2.54

12.28

887.5

8

2-φ4.8

±0.2

2-φ4.8

±0.1

MOUNTING HOLES

5.3

+1.0

–0.5

5

+1.0

–0.5

Note. Not use the guiding holes to mount on the cooling fin.

APPLICATION

AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics, UPS

MITSUBISHI IGBT MODULES

CM20MD3-12H

MEDIUM POWER SWITCHING USE

FLAT-BASE TYPE, INSULATED TYPE

¡IC..................................................................... 20A

¡VCES ............................................................600V

¡Insulated Type

¡CIB Module

3φ Inverter+1φ Converter

¡UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Feb.1999

MITSUBISHI IGBT MODULES

CM20MD3-12H

MEDIUM POWER SWITCHING USE

FLAT-BASE TYPE, INSULATED TYPE

MAXIMUM RATINGS (Tj = 25°C)

INVERTER PART

CONVERTER PART

COMMON RATING

Collector-emitter voltage

Gate-emitter voltage

Collector Current

Emitter Current

Maximum collector dissipation

600

±20

20

40

20

40

57

G – E Short

C – E Short

TC = 25°C

PULSE (Note. 2)

TC = 25°C

PULSE (Note. 2)

Tf = 25°C

Symbol Parameter Condition UnitRating V

V

A

W

VCES

VGES

IC

ICM

IE

(Note. 1)

IEM

(Note. 1)

PC

(Note. 3)

Repetitive peak reverse voltage

Recommended AC input voltage

DC output current

Surge (non-repetitive) forward current

I2t for fusing

800

220

15

375

585

1φ rectifying circuit Tf = 108°C

1 cycle at 60Hz, peak value Non-repetitive

Value for one cycle of surge current

Symbol Parameter Condition UnitRating V

V

A

A2s

VRRM

Ea

IO

IFSM

I2t

Tj

Tstg

Viso—

—

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

–40 ~ +150

–40 ~ +125

2500

1.47 ~1.96

60

AC 1 min.

Mounting M4 screw

Typical value

Symbol Parameter Condition UnitRating °C

°C

V

N . m

g

Feb.1999

MITSUBISHI IGBT MODULES

CM20MD3-12H

MEDIUM POWER SWITCHING USE

FLAT-BASE TYPE, INSULATED TYPE

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

INVERTER PART

CONVERTER PART

Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.

2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

5. Thermal resistance is specified under following conditions.

• The conductive greese applied, between module and fin.

• Al plate is used as fin.

Collector cutoff current

Gate-emitter

threshold voltage

Gate-emitter cutoff current

Collector-emitter

saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Tur n-on delay time

Tur n-on rise time

Tur n-off delay time

Tur n-off fall time

Emitter-collector voltage

Reverse recovery time

Reverse recovery charge

Thermal resistance

V

1

0.5

2.8

—

2.0

1.5

0.4

—

120

300

200

300

2.8

110

—

2.2

3.1

VCE = VCES, VGE = 0V

VGE = VGES, VCE = 0V

Tj = 25°C

Tj = 150°C

VCC = 300V, IC = 20A, VGE = 15V

VCC = 300V, IC = 20A

VGE1 = VGE2 = 15V

RG = 31Ω

Resistive load

IE = 20A, VGE = 0V

die / dt = – 40A / µs

IGBT part, Per 1/6 module

FWDi part, Per 1/6 module

mA

µA

nF

nC

ns

V

ns

µC

°C/W

—

2.1

2.15

—

60

—

0.05

—

ICES

IGES

Cies

Coes

Cres

QG

td (on)

tr

td (off)

tf

V

EC (Note. 1)

trr

(Note. 1)

Qrr

(Note. 1)

R

th(j-f)

Q

(Note. 5)

R

th(j-f)

R

(Note. 5)

Symbol Parameter Test conditions

VGE(th)

VCE(sat)

Limits

Min. Typ. Max. Unit

64.5 7.5IC = 2mA, VCE = 10V

IC = 20A, VGE = 15V (Note. 4)

VCE = 10V

VGE = 0V

Repetitive reverse current

Forward voltage drop

Thermal resistance

VR = VRRM, Tj = 150°C

IF = 25A

Per 1/4 module

mA

V

°C/W

—

IRRM

VFM

Rth(j-f) (Note. 5)

Symbol Parameter Condition Limits

Min. Typ. Max. Unit

8

1.5

3.3

Feb.1999

40

32

24

16

8

0201020 4 6 8 12141618

VCE = 10V

Tj = 25°C

Tj = 125°C

5

4

3

2

1

0400 8162432

Tj = 25°C

Tj = 125°C

VGE = 15V

100

102

7

5

3

2

0 0.8 1.6

101

7

5

3

2

2.4 3.2 4.0

Tj = 25°C

40

32

24

16

8

010510 234 6789

VGE=20

(V)

Tj=25°C

9

15 12

11

10

8 7

10

8

6

4

2

0201020 4 6 8 12141618

9

7

5

3

1

Tj = 25°C

IC = 40A

IC = 20A

IC = 8A

10–1

2310–1 5710023 5710123 57102

101

7

5

3

2

100

7

5

3

2

7

5

3

2

10–2

Cies

VGE = 0V

Coes

Cres

OUTPUT CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER VOLTAGE VCE (V)

TRANSFER CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT IC (A)

GATE-EMITTER VOLTAGE VGE (V)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER

SATURATION VOLTAGE VCE(sat) (V)

COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V)

FREE-WHEEL DIODE

FORWARD CHARACTERISITICS

(TYPICAL)

EMITTER CURRENT IE (A)

EMITTER-COLLECTOR VOLTAGE VEC

(

V

)

CAPACITANCE VS. VCE

(TYPICAL)

CAPACITANCE Cies, Coes, Cres (nF)

COLLECTOR-EMITTER VOLTAGE VCE

(

V

)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER

SATURATION VOLTAGE VCE(sat) (V)

MITSUBISHI IGBT MODULES

CM20MD3-12H

MEDIUM POWER SWITCHING USE

FLAT-BASE TYPE, INSULATED TYPE

PERFORMANCE CURVES

Feb.1999

10

1

10

–3

10

–5

10

–4

10

0

7

5

3

2

10

–2

7

5

3

2

10

–1

7

5

3

2

7

5

3

2

10

–3

23 57 23 57 23 57 23 57

10

1

10

–2

10

–1

10

0

10

–3

10

–3

7

5

3

2

10

–2

7

5

3

2

10

–1

3

2

23 57 23 57

Single Pulse

T

f

= 25°C

R

th(j – f)

= 2.2°C/W

10

1

10

–3

10

–5

10

–4

10

0

7

5

3

2

10

–2

7

5

3

2

10

–1

7

5

3

2

7

5

3

2

10

–3

23 57 23 57 23 57 23 57

10

1

10

–2

10

–1

10

0

10

–3

10

–3

7

5

3

2

10

–2

7

5

3

2

10

–1

3

2

23 57 23 57

Single Pulse

T

f

= 25°C

R

th(j – f)

= 3.1°C/W

10

1

10

3

7

5

3

2

10

0

23 57

10

1

10

2

7

5

3

2

23 57

10

2

t

d(off)

V

CC

= 300V

V

GE

= ±15V

R

G

= 31Ω

T

j

= 125°C

t

d(on)

t

f

t

r

10

1

10

3

7

5

3

2

10

0

23 57

10

1

10

2

7

5

3

2

23 57

10

2

10

–1

10

1

7

5

3

2

10

0

7

5

3

2

–di/dt = 40A / µs

T

j

= 25°C

t

rr

I

rr

20

16

12

8

4

01000 20 40 60 80

18

14

10

6

2

V

CC

= 200V

V

CC

= 300V

I

C

= 20A

NORMALIZED TRANSIENT

THERMAL IMPEDANCE Z

th (j – f)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

SWITCHING TIMES (ns)

COLLECTOR CURRENT I

C

(A)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(TYPICAL)

REVERSE RECOVERY TIME t

rr

(ns)

EMITTER CURRENT I

E

(A)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT part)

NORMALIZED TRANSIENT

THERMAL IMPEDANCE Z

th (j – f)

TIME (s) TIME (s)

V

GE

– GATE CHARGE

(TYPICAL)

GATE-EMITTER VOLTAGE V

GE

(V)

GATE CHARGE Q

G

(nC)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(FWDi part)

REVERSE RECOVERY CURRENT l

rr

(A)

MITSUBISHI IGBT MODULES

CM20MD3-12H

MEDIUM POWER SWITCHING USE

FLAT-BASE TYPE, INSULATED TYPE