AT-32032
Low Current, High Performance
NPN Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32032 is a high performance NPN bipolar
transistor that has been optimized for maximum ft at
low voltage operation, making it ideal for use in battery
powered applications in cellular/PCS and other wireless
markets. The AT-32032 uses the miniature 3 lead SOT-323
(SC-70) plastic package.
Optimized performance at 2.7 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz systems. Typical
amplier design at 900 MHz yields 1 dB noise gures with
15 dB associated gain at 2.7 V and 5 mA bias condition,
with noise performance being relatively insensitive to
input match. High gain capability at 1 V and 1 mA makes
this device a good t for 900 MHz pager applications.
Moreover, voltage breakdown is high enough for use
at 5 V.
The AT-32032 belongs to Avago’s AT-3XXXX series bipolar
transistors. It exhibits excellent device uniformity, per-
formance and reliability as a result of ion-implantation,
self-alignment techniques, and gold metalization in the
fabrication process.
Features
• High Performance Bipolar Transistor Optimized for Low
Current, Low Voltage Applications at 900 MHz, 1.8 GHz,
and 2.4 GHz
• Performance at 2.7 V, 5 mA:
900 MHz: 1 dB NF, 15 dB GA
1800 MHz: 1.3 dB NF, 11 dB GA
2400 MHz: 1.4 dB NF, 7.5 dB G
• Characterized for End-Of-Life Battery Use (2.7 V)
• Miniature 3-lead SOT-323 (SC-70) Plastic Package
• Lead-free
Applications
• LNA, Oscillator, Driver Amplier, Buer Amplier, and
Down Converter for Cellular and PCS Handsets and
Cordless Telephones
• LNA, Oscillator, Mixer, and Gain Amplier for Pagers
• Power Amplier and Oscillator for RF-ID Tag
• LNA and Gain Amplier for GPS
• LNA for CATV Set-Top Box
3-Lead SC-70 (SOT-323)
Surface Mount Plastic Package
Pin Conguration
BASE EMITTER
COLLECTOR
32
2
Electrical Specications, TA = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF Noise Figure
VCE = 2.7 V, IC = 5 mA
f = 0.9 GHz
f = 1.8 GHz
dB 1.0
1.25
1.3
GA Associated Gain
VCE = 2.7 V, IC = 5 mA
f = 0.9 GHz
f = 1.8 GHz
dB 13.5 15.0
10.5
hFE Forward Current Transfer Ratio
VCE = 2.7 V, IC = 5 mA
– 70 300
ICBO Collector Cuto Current
VCB = 3 V
μA0.2
IEBO Emitter Cuto Current
VEB = 1 V
μA1.5
AT-32032 Characterization Information, TA = 25°C
Symbol Parameters and Test Conditions Units Typ.
P1dB Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz dBm 13
G1dB Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz dB 15.5
IP3 Output Third Order Intercept Point (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz dBm 23
|S21|E2 Gain in 50 Ω System
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz dB 11.5
AT-32032 Absolute Maximum Ratings
Symbol Parameter Units
Absolute
Maximum[1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 11
VCEO Collector-Emitter Voltage V 5.5
IC Collector Current mA 40
PT Power Dissipation[2, 3] mW 200
Tj Junction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance [2]:
qjc = 350°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. TMOUNTING SURFACE = 25°C.
3. Derate at 2.86 mW/°C for TMOUNTING SURFACE
> 80°C.
3
AT-32032 Typical Performance
0
2.5
1.5
2.0
0.5
1.0
0 2.01.0 3.0 4.0
NOISE FIGURE (dB)
FREQUENCY (GHz)
Figure 1. AT-32032 Typical Noise Figure vs.
Frequency at 1†V, 1 mA.
2 mA
5 mA
10 mA
0
2.5
1.5
2.0
0.5
1.0
0 2.01.0 3.0 4.0
NOISE FIGURE (dB)
FREQUENCY (GHz)
Figure 2. AT-32032 Typical Noise Figure vs.
Frequency and Current at 2.7†V.
2 mA
5 mA
10 mA
0
2.5
1.5
2.0
0.5
1.0
0 2.01.0 3.0 4.0
NOISE FIGURE (dB)
FREQUENCY (GHz)
Figure 3. AT-32032 Typical Noise Figure vs.
Frequency and Current at 5†V.
0
12.0
6.0
9.0
3.0
0 2.01.0 3.0 4.0
GAIN (dB)
FREQUENCY (GHz)
Figure 4. AT-32032 Associated Gain vs.
Frequency at 1†V, 1 mA.
2 mA
5 mA
10 mA
0
20.0
10.0
15.0
5.0
0 2.01.0 3.0 4.0
GAIN (dB)
FREQUENCY (GHz)
Figure 5. AT-32032 Associated Gain vs.
Frequency and Current at 2.7†V.
2 mA
5 mA
10 mA
0
20.0
10.0
15.0
5.0
0 2.01.0 3.0 4.0
GAIN (dB)
FREQUENCY (GHz)
Figure 6. AT-32032 Associated Gain vs.
Frequency and Current at 5†V.
1 V
2.7 V
5 V
-10
20
5
10
-5
0 105 15 20 25
Po -1 dB (dBm)
COLLECTOR CURRENT (mA)
Figure 7. AT-32032 P1 dB vs. Collector Current
and Voltage (valid up to 2.4†GHz).
15
0
1 V
2.7 V
5 V
0
20
8
12
4
0 42 6 8 10
G 1 dB (dBm)
COLLECTOR CURRENT (mA)
Figure 8a. G1 dB vs. Collector Current and
Voltage (at 900†MHz).
16
1 V
2.7 V
5 V
0
16
4
8
0 42 6 8 10
G 1 dB (dBm)
COLLECTOR CURRENT (mA)
Figure 8b. G1 dB vs. Collector Current and
Voltage (at 1.8 GHz).
12
4
AT-32032 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 1 V, IC = 1 mA
Freq.
GHz
S11 S21 S12 S22
Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.5 0.852 -51 9.61 3.024 137 -20.65 0.093 59 0.895 -21
0.75 0.760 -74 8.68 2.717 119 -18.39 0.120 48 0.821 -29
1.0 0.655 -94 7.68 2.420 104 -17.35 0.136 40 0.756 -35
1.5 0.523 -130 5.75 1.939 79 -16.68 0.147 32 0.665 -44
2.0 0.451 -161 4.11 1.606 60 -16.52 0.149 31 0.615 -52
3.0 0.403 147 1.76 1.224 30 -14.42 0.190 43 0.565 -71
4.0 0.419 104 0.20 1.023 7 -10.21 0.309 42 0.527 -96
5.0 0.459 69 -0.92 0.899 -11 -6.58 0.469 26 0.478 -127
6.0 0.497 45 -1.56 0.836 -26 -4.22 0.615 5 0.411 -168
7.0 0.529 27 -1.84 0.809 -41 -2.85 0.720 -18 0.379 141
8.0 0.561 13 -2.07 0.788 -56 -2.33 0.765 -40 0.425 96
9.0 0.590 -2 -2.34 0.764 -72 -2.28 0.769 -60 0.495 63
10.0 0.626 -17 -2.74 0.729 -87 -2.57 0.744 -79 0.555 38
AT-32032 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, VCE = 1 V, IC = 1 mA
Freq.
GHz
Fmin
dB
Γopt Rn
ohms
Gassoc
dBMag Ang
0.9 1.1 0.48 63 14.5 11.5
1.8 1.3 0.51 129 6.8 8.3
2.0 1.4 0.52 143 5.2 7.4
2.5 1.6 0.54 177 2.9 6.4
3.0 1.8 0.57 -153 4.9 5.7
3.5 2.0 0.61 -125 12.7 5.0
4.0 2.2 0.65 -102 26.0 4.2
gmax
dB(S[2,1])
k
-5
20
10
15
0
5
0 21 3 4 5 6
GAIN (dB)
0
1.25
0.75
1
0.25
0.5
k
FREQUENCY (GHz)
Figure 9. Gain vs. Frequency at 1 V, 1 mA.
Note: dB(|S21|) = 20 * log(|S21|)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21| /|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12| |S21|
5
AT-32032 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq.
GHz
S11 S21 S12 S22
Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.5 0.744 -57 14.37 5.232 130 -23.72 0.065 60 0.839 -22
0.75 0.609 -78 12.86 4.394 112 -21.73 0.082 52 0.755 -28
1.0 0.489 -96 11.40 3.714 98 -20.58 0.094 49 0.694 -31
1.5 0.351 -129 8.86 2.774 77 -19.05 0.112 48 0.625 -37
2.0 0.280 -158 6.93 2.221 61 -17.56 0.133 49 0.592 -43
3.0 0.236 149 4.28 1.636 34 -14.08 0.198 50 0.561 -59
4.0 0.258 105 2.58 1.346 11 -10.62 0.295 44 0.541 -78
5.0 0.317 72 1.36 1.170 -8 -7.54 0.420 30 0.510 -103
6.0 0.387 51 0.43 1.051 -26 -5.11 0.555 13 0.447 -135
7.0 0.455 34 -0.24 0.973 -42 -3.28 0.686 -8 0.373 -178
8.0 0.516 19 -0.80 0.913 -58 -2.24 0.772 -30 0.367 129
9.0 0.563 3 -1.39 0.852 -74 -1.86 0.807 -52 0.431 86
10.0 0.610 -14 -2.00 0.794 -89 -2.00 0.795 -73 0.504 55
AT-32032 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq.
GHz
Fmin
dB
Γopt Rn
ohms
Gassoc
dBMag Ang
0.9 0.9 0.38 57 10.6 14.0
1.8 1.2 0.41 124 6.2 10.5
2.0 1.2 0.42 136 5.3 9.4
2.5 1.4 0.44 176 3.4 8.4
3.0 1.6 0.47 -152 4.9 7.5
3.5 1.8 0.52 -123 10.5 6.9
4.0 2.1 0.57 -100 20.6 6.2
gmax
dB(S[2,1])
k
0
20
12
16
4
8
0 21 3 4 5 6
GAIN (dB)
0
1.25
0.75
1
0.25
0.5
k
FREQUENCY (GHz)
Figure 10. Gain vs. Frequency at 2.7 V, 2 mA.
Note: dB(|S21|) = 20 * log(|S21|)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21| /|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12| |S21|
6
AT-32032 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 5 mA
Freq.
GHz
S11 S21 S12 S22
Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.5 0.484 -70 18.65 8.559 113 -25.51 0.053 62 0.680 -26
0.75 0.344 -88 16.04 6.339 98 -23.25 0.069 61 0.602 -28
1.0 0.257 -103 13.98 5.000 87 -21.46 0.085 61 0.561 -29
1.5 0.165 -130 10.90 3.509 70 -18.59 0.118 60 0.522 -33
2.0 0.124 -160 8.76 2.740 57 -16.29 0.153 57 0.502 -39
3.0 0.112 143 5.93 1.979 33 -12.69 0.232 48 0.477 -55
4.0 0.144 100 4.19 1.620 13 -9.89 0.320 37 0.454 -73
5.0 0.209 72 3.01 1.414 -7 -7.55 0.419 24 0.418 -95
6.0 0.296 57 2.14 1.279 -25 -5.58 0.526 8 0.353 -124
7.0 0.394 43 1.43 1.179 -43 -3.94 0.636 -10 0.275 -166
8.0 0.489 28 0.70 1.084 -61 -2.79 0.725 -30 0.270 137
9.0 0.564 10 -0.12 0.986 -78 -2.18 0.778 -50 0.355 91
10.0 0.627 -9 -1.05 0.886 -94 -2.10 0.786 -71 0.455 58
AT-32032 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 5 mA
Freq.
GHz
Fmin
dB
Γopt Rn
ohms
Gassoc
dBMag Ang
0.9 0.9 0.23 71 7.5 15.6
1.8 1.2 0.295 138 5.1 11.5
2.0 1.2 0.31 152 4.6 10.4
2.5 1.3 0.35 -173 4.1 9.1
3.0 1.5 0.41 -142 5.8 8.2
3.5 1.7 0.47 -114 11.0 7.4
4.0 1.9 0.54 -93 20.0 6.7
gmax
dB(S[2,1])
k
0
25
15
20
5
10
0 21 3 4 5 6
GAIN (dB)
0
1.25
0.75
1
0.25
0.5
k
FREQUENCY (GHz)
Figure 11. Gain vs. Frequency at 2.7 V, 5 mA.
Note: dB(|S21|) = 20 * log(|S21|)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21| /|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12| |S21|
7
AT-32032 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 10 mA
Freq.
GHz
S11 S21 S12 S22
Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.5 0.292 -76.768 20.197 10.230 102.252 -26.558 0.047 68.475 0.577 -23.850
0.75 0.194 -89.611 17.121 7.179 90.014 -23.688 0.065 68.467 0.528 -24.315
1.0 0.139 -100.612 14.850 5.527 81.084 -21.463 0.085 67.769 0.504 -25.449
1.5 0.081 -126.165 11.624 3.813 66.997 -18.160 0.124 64.256 0.481 -30.013
2.0 0.057 -160.808 9.409 2.954 54.862 -15.735 0.163 59.458 0.467 -36.600
3.0 0.064 131.034 6.523 2.119 33.080 -12.174 0.246 48.003 0.443 -52.023
4.0 0.103 91.686 4.750 1.728 13.099 -9.551 0.333 35.089 0.418 -70.196
5.0 0.169 69.993 3.580 1.510 -5.823 -7.424 0.425 21.009 0.378 -92.177
6.0 0.258 58.339 2.719 1.368 -24.160 -5.668 0.521 5.600 0.309 -119.643
7.0 0.362 46.145 2.042 1.265 -42.430 -4.173 0.619 -11.469 0.224 -160.597
8.0 0.466 31.083 1.334 1.166 -60.668 -3.083 0.701 -30.211 0.217 138.234
9.0 0.553 13.235 0.533 1.063 -78.273 -2.402 0.758 -50.020 0.307 91.480
10.0 0.628 -5.840 -0.404 0.955 -95.268 -2.236 0.773 -69.960 0.419 58.813
AT-32032 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 10 mA
Freq.
GHz
Fmin
dB
Γopt Rn
ohms
Gassoc
dBMag Ang
0.9 1.1 0.15 87 7.6 16.2
1.8 1.3 0.23 159 5.6 11.9
2.0 1.4 0.26 173 5.3 11.0
2.5 1.5 0.32 -156 5.7 9.5
3.0 1.7 0.38 -128 8.6 8.4
3.5 1.9 0.45 -105 14.8 7.6
4.0 2.0 0.52 -84 25.0 6.8
gmax
dB(S[2,1])
k
0
25
15
20
5
10
0 21 3 4 5 6
GAIN (dB)
0
1.25
0.75
1
0.25
0.5
k
FREQUENCY (GHz)
Figure 12. Gain vs. Frequency at 2.7 V, 10 mA.
Note: dB(|S21|) = 20 * log(|S21|)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21| /|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12| |S21|
8
AT-32032 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 2 mA
Freq.
GHz
S11 S21 S12 S22
Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.940 -13 17.5 7.500 167 -36.0 0.016 83 0.981 -5
0.5 0.732 -56 14.9 5.588 129 -23.8 0.064 60 0.842 -22
0.9 0.518 -87 12.4 4.165 104 -21.1 0.088 51 0.714 -29
1.0 0.484 -93 11.6 3.814 99 -20.6 0.093 50 0.699 -30
1.5 0.342 -124 9.0 2.824 78 -19.0 0.112 49 0.632 -36
1.8 0.291 -142 7.8 2.466 67 -18.1 0.125 49 0.606 -40
2.0 0.265 -153 7.1 2.267 61 -17.5 0.134 50 0.596 -43
3.0 0.212 151 4.5 1.670 34 -14.0 0.199 50 0.566 -58
4.0 0.238 103 2.7 1.367 11 -10.7 0.293 43 0.549 -77
5.0 0.306 70 1.5 1.186 -8 -7.6 0.416 30 0.515 -102
6.0 0.383 50 0.6 1.067 -26 -5.2 0.550 13 0.453 -134
7.0 0.456 34 -0.1 0.990 -43 -3.3 0.682 -8 0.375 -177
8.0 0.523 19 -0.7 0.918 -59 -2.3 0.771 -31 0.373 130
9.0 0.573 2 -1.3 0.857 -75 -1.9 0.805 -53 0.437 86
10.0 0.620 --14 -2.0 0.792 -90 -2.0 0.791 -73 0.515 54
AT-32032 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 2 mA
Freq.
GHz
Fmin
dB
Γopt Rn
ohms
Gassoc
dBMag Ang
0.9 1.0 0.48 50 14.7 14.8
1.8 1.2 0.445 118 7.4 10.1
2.0 1.3 0.44 134 5.8 9.5
2.5 1.5 0.43 172 3.7 8.5
3.0 1.7 0.47 -154 5.0 7.7
3.5 1.9 0.53 -123 11.3 7.0
4.0 2.1 0.58 -98 23.7 6.4
gmax
dB(S[2,1])
k
0
25
15
20
5
10
0 21 3 4 5 6
GAIN (dB)
0
1.25
0.75
1
0.25
0.5
k
FREQUENCY (GHz)
Figure 13. Gain vs. Frequency at 5 V, 2 mA.
Note: dB(|S21|) = 20 * log(|S21|)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21| /|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12| |S21|
9
AT-32032 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 5 mA
Freq.
GHz
S11 S21 S12 S22
Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.860 -19 23.8 15.523 160 -36.4 0.015 80 0.949 -9
0.5 0.496 -67 18.8 8.705 114 -25.4 0.054 63 0.690 -25
0.9 0.298 -90 14.9 5.569 92 -22.0 0.079 61 0.580 -28
1.0 0.269 -96 14.1 5.067 88 -21.4 0.085 61 0.570 -29
1.5 0.168 -119 11.0 3.558 71 -18.5 0.119 59 0.530 -33
1.8 0.133 -135 9.7 3.046 63 -17.1 0.140 58 0.514 -36
2.0 0.116 -146 8.9 2.782 58 -16.2 0.154 57 0.508 -39
3.0 0.086 150 6.1 2.011 34 -12.7 0.232 48 0.483 -54
4.0 0.121 98 4.3 1.640 13 -9.9 0.319 37 0.461 -72
5.0 0.194 70 3.1 1.434 -6 -7.6 0.417 23 0.422 -95
6.0 0.287 57 2.3 1.300 -25 -5.7 0.521 8 0.354 -124
7.0 0.390 43 1.6 1.198 -44 -4.0 0.631 -10 0.274 -166
8.0 0.491 28 0.8 1.101 -62 -2.8 0.722 -30 0.273 137
9.0 0.570 10 0 0.997 -79 -2.2 0.774 -51 0.361 91
10.0 0.640 -9 -1.0 0.891 -95 -2.1 0.781 -72 0.464 57
AT-32032 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 5 mA
Freq.
GHz
Fmin
dB
Γopt Rn
ohms
Gassoc
dBMag Ang
0.9 1.0 0.38 52 11.7 16.1
1.8 1.2 0.335 124 6.3 11.2
2.0 1.3 0.33 140 5.3 10.5
2.5 1.4 0.35 179 4.3 9.2
3.0 1.6 0.40 -146 5.9 8.2
3.5 1.8 0.47 -118 11.5 7.5
4.0 2.0 0.54 -92 22.0 6.8
gmax
dB(S[2,1])
k
0
25
15
20
5
10
0 21 3 4 5 6
GAIN (dB)
0
1.25
0.75
1
0.25
0.5
k
FREQUENCY (GHz)
Figure 14. Gain vs. Frequency at 5 V, 5 mA.
Note: dB(|S21|) = 20 * log(|S21|)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21| /|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12| |S21|
10
AT-32032 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 10 mA
Freq.
GHz
S11 S21 S12 S22
Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.751 -26 27.7 24.169 152 -37.1 0.014 78 0.898 -13
0.5 0.322 -70 20.3 10.383 103 -26.4 0.048 68 0.584 -24
0.9 0.181 -84 15.9 6.208 85 -22.1 0.078 68 0.514 -25
1.0 0.160 -88 15.0 5.623 82 -21.3 0.086 67 0.508 -26
1.5 0.094 -102 11.8 3.885 68 -18.1 0.125 64 0.483 -30
1.8 0.068 -114 10.4 3.304 60 -16.5 0.149 61 0.473 -34
2.0 0.055 -123 9.6 3.012 56 -15.6 0.165 59 0.468 -37
3.0 0.032 146 6.7 2.161 34 -12.1 0.248 47 0.444 -52
4.0 0.075 86 4.9 1.759 14 -9.5 0.334 34 0.419 -70
5.0 0.148 67 3.7 1.538 -5 -7.5 0.424 20 0.375 -92
6.0 0.243 58 2.9 1.397 -24 -5.7 0.517 5 0.301 -120
7.0 0.354 47 2.2 1.292 -42 -4.3 0.613 -12 0.214 -162
8.0 0.464 32 1.5 1.190 -61 -3.2 0.695 -31 0.214 136
9.0 0.555 14 0.7 1.083 -79 -2.5 0.751 -51 0.311 89
10.0 0.636 -5 -0.3 0.967 -96 -2.3 0.765 -71 0.426 57
AT-32032 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 10 mA
Freq.
GHz
Fmin
dB
Γopt Rn
ohms
Gassoc
dBMag Ang
0.9 1.1 0.29 69 10.0 17.0
1.8 1.3 0.25 143 6.1 11.8
2.0 1.4 0.26 159 5.6 11.0
2.5 1.5 0.31 -165 5.5 9.6
3.0 1.7 0.37 -133 8.1 8.5
3.5 1.9 0.45 -106 14.6 7.7
4.0 2.1 0.52 -84 25.7 6.9
gmax
dB(S[2,1])
k
0
25
15
20
5
10
0 21 3 4 5 6
GAIN (dB)
0
1.25
0.75
1
0.25
0.5
k
FREQUENCY (GHz)
Figure 15. Gain vs. Frequency at 5 V, 10 mA.
Note: dB(|S21|) = 20 * log(|S21|)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = S21 (k± √k2–1)
S12
MSG = |S21| /|S12|
k = 1 – |S11|2 – |S22|2 + |D|2 ; D = S11S22 – S12S21
2*|S12| |S21|
11
INPUT
Zo
Zo
C1
C4
C2
L2
R1 VCC = 3 V
R2 R4 C5
R5
L3
L4 C3R6
Q1
L1
R3
OUTPUT
Figure 16. Schematic Diagram.
Figure 17. Component Parts List.
C1,C3 10 pF chip capacitor
C2 Open circuited stub .275 inch long
C4,C5 1000 pF chip capacitor
L1 8 nH chip inductor (Coilcraft 1008CS-080)
L2 Optional (see R1)
L3 56 nH chip inductor (Coilcraft 1008CS-560)
L4 15 nH chip inductor (Coilcraft 1008CS-150)
Q1 Silicon Agilent AT-32032 Bipolar Transistor
R1 10 K Ω chip resistor (may want to substitute
a 180 nH chip inductor and 50 W resistor for
lower noise gure, better low freq stability,
the readjust R2)
R2 26.1 K Ω chip resistor (adjust for rated Ic)
R3 3.32 K Ω chip resistor
R4 3.32 K Ω chip resistor
R5 51.1 Ω chip resistor
R6 13 Ω chip resistor (see text)
Zo 50 Ω microstripline
AT-32032 Application Information
The AT-32032 is described in a low noise amplier for use
in the 800 to 900 MHz frequency range. The amplier is
designed for use with .032 inch thickness FR-4 printed
circuit board material.
900 MHz LNA Design
The amplier is designed for a Vce of 2.7 volts and Ic of 5
mA. and a nominal power supply voltage of 3 volts. The
amplier schematic is shown in Figure 16.
A component list is shown in Figure 17. The artwork
including component placement is shown in Figure 18.
Figure 18. 1X Artwork showing Component Placement.
The input matching network uses a shunt C series L input
impedance matching circuit for low noise. The shunt
C is accomplished with an open circuited stub while a
chip inductor is used for the series element. The output
impedance matching network consists of a series chip
inductor. Bias insertion is accomplished by the use of small
inductors suitably bypassed. A resistor is placed in series
with the output bias decoupling inductor to de-Q the
network and improve in-band and low frequency stability.
Surface mount Coilcraft inductors were chosen for their
small size. Resistor R6 enhances broad band stability
especially in the 9 to 10 GHz frequency range.
Biasing
The bias network is designed for a nominal power supply
voltage of 3 volts. Resistors R1 and R2 are used to adjust
collector current. Resistor R4 can be attached to the
junction of R5 and C5 to improve bias point stability.
IN OUT
Vcc
AT-3XX32
AT-4XX32 02/98 AJW
.031 FR-4
10
17
15
16
11
12
13
14
500 700600 800 900 1000
GAIN (dB)
FREQUENCY (MHz)
1
1.5
1.1
1.2
1.3
1.4
500 700600 800 900 1000
NOISE FIGURE
(dB)
FREQUENCY (MHz)
-20
0
Input
Output
-15
-10
-5
500 700600 800 900 1000
RETURN LOSS (dB)
FREQUENCY (MHz)
Figure 19. Gain vs Frequency. Figure 20. Noise Figure vs Frequency. Figure 21. Input/Output Return Loss.
Output intercept point, IP3, was measured at 900 MHz
to be +14.3 dBm. This could be improved in two ways.
The output resistors R5 and R6 could be varied in value.
Increasing the value of R5 and decreasing the value
of R6 will improve IP3 although circuit stability may be
sacriced. The second method would be to optimize the
output match for power as opposed to matching for
lowest VSWR.
Using the AT-32032 at Other Frequencies
The demo board and design techniques presented here
can be used to build low noise ampliers for other fre-
quencies in the VHF through 1.9 GHz frequency range.
Performance
The measured gain of the completed amplier is shown in
Figure 19. The gain varies
from 15.5 to 16.5 dB over the 800 to 900 MHz frequency
range. Noise gure versus frequency is shown in Figure
20. Best performance occurs at 950 MHz providing a 1.1
dB noise gure.
Measured input and output return loss is shown in Figure
21. The input return loss is 7 dB at 900 MHz and can be
improved to 9 dB with a 0.1 dB increase in noise gure by
increasing the amount of capacitance at C2. Additional
capacitance at C2 increases the input return loss even
further with increased noise gure. Output return loss is a
nominal 12 to 15 dB.
Package Dimensions
SOT-323 Plastic Package
Ordering Information
Part Numbers No. of Devices Comments
AT-32032-BLK 100 Bulk
AT-32032-BLKG 100 Bulk
AT-32032-TR1 3000 7" Reel
AT-32032-TR1G 3000 7" Reel
AT-32032-TR2 10000 13" Reel
AT-32032-TR2G 10000 13" Reel
Note: Order part number with a “G” sux if lead-free option is desired.
e
B
e1
E1
C
EXXX
L
D
A
A1
Notes:
XXX-package marking
Drawings are not to scale
DIMENSIONS (mm)
MIN.
0.80
0.00
0.15
0.08
1.80
1.10
1.80
0.26
MAX.
1.00
0.10
0.40
0.25
2.25
1.40
2.40
0.46
SYMBOL
A
A1
B
C
D
E1
e
e1
E
L
1.30 typical
0.65 typical
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Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-2644EN
AV02-1963EN - June 9, 2009
Tape Dimensions and Product Orientation
For Outline SOT-323 (SC-70 3 Lead)