BC850C - Diotec Semiconductor

BC846 ... BC850

NPN Surface Mount General Purpose Si-Epi-Planar Transistors

Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN

Version 2012-01-02

Dimensions - Maße [mm]

1 = B 2 = E 3 = C

Power dissipation – Verlustleistung 250 mW

Plastic case

Kunststoffgehäuse

SOT-23

(TO-236)

Weight approx. – Gewicht ca. 0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)

BC846 BC847 BC850 BC848

BC849

Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 65 V 45 V 45 V 30 V

Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 80 V 50 V 50 V 30 V

Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 6 V 5 V

Power dissipation – Verlustleistung Ptot 250 mW 1)

Collector current – Kollektorstrom (dc) IC100 mA

Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)

Min. Typ. Max.

DC current gain – Kollektor-Basis-Stromverhältnis

VCE = 5 V, IC = 10 µA Group A

Group B

Group C

hFE

–

150

270

–

VCE = 5 V, IC = 2 mA Group A

Group B

Group C

hFE

110

200

420

180

290

520

220

450

800

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

–

90 mV

200 mV

250 mV

600 mV

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

–

700 mV

900 mV

–

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2.5 max

1.3

±0.1

1.1

0.4

2.9

±0.1

1 2

Type

Code

1.9

BC846 ... BC850

Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)

Min. Typ. Max.

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

VCE = 5 V, IC = 2 mA

VCE = 5 V, IC = 10 mA

VBE

580 mV

–

660 mV

–

700 mV

720 mV

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 30 V, (E open)

VCE = 30 V, Tj = 125°C, (E open)

ICBO

–

15 nA

5 µA

Emitter-Base cutoff current

VEB = 5 V, (C open) IEBO – – 100 nA

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz fT– 300 MHz –

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO – 3.5 pF 6 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – 9 pF –

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren BC856 ... BC860

Marking of available current gain groups

Stempelung der lieferbaren

Stromverstärkungsgruppen

BC846A = 1A

BC846B = 1B

BC847A = 1E

BC847B = 1F

BC847C = 1G

BC850B = 1F

BC850C = 1G

BC848A = 1E

BC848B = 1F

BC848C = 1G

BC849B = 1F

BC849C = 1G

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss