1.5–18 GHz Surface Mount
Pseudomorphic HEMT
Technical Data
ATF-36163
Features
• Low Minimum Noise Figure:
1 dB Typical at 12 GHz
0.6 dB Typical at 4 GHz
• Associated Gain:
9.4 dB Typical at 12 GHz
15.8 dB Typical at 4 GHz
• Maximum Available Gain:
11 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Cost Surface Mount
Small Plastic Package
• Tape-and-Reel Packaging
Option Available
Applications
• 12 GHz DBS Downconverters
• 4 GHz TVRO Downconverters
• S or L Band Low Noise
Amplifiers
Surface Mount Package
SOT-363 (SC-70) Additionally, the ATF-36163 has
low noise-resistance, which
reduces the sensitivity of noise
performance to variations in
input impedance match. This
feature makes the design of broad
band low noise amplifiers much
easier. The performance of the
ATF-36163 makes this device the
ideal choice for use in the 2nd or
3rd stage of low noise cascades.
The repeatable performance and
consistency make it appropriate
for use in Ku-band Direct
Broadcast Satellite (DBS) TV
systems, C-band TV Receive Only
(TVRO) LNAs, Multichannel
Multipoint Distribution Systems
(MMDS), X-band Radar detector
and other low noise amplifiers
operating in the 1.5 –18 GHz
frequency range.
This GaAs PHEMT device has a
nominal 0.2 micron gate length
with a total gate periphery
(width) of 200 microns. Proven
gold-based metallization system
and nitride passivation assure
rugged, reliable devices.
Description
The Agilent ATF-36163 is a low-
noise Pseudomorphic High
Electron Mobility Transistor
(PHEMT), in the SOT-363 (SC-70)
package. When optimally matched
for minimum noise figure, it will
provide a noise figure of 1 dB at
12 GHz and 0.6 dB at 4 GHz.
Pin Connections and
Package Marking
DRAIN
SOURCE
36
SOURCE
SOURCE
GATE SOURCE
Note: Package marking provides
orientation and identification.
2
ATF-36163 Absolute Maximum Ratings[1]
Absolute
Symbol Parameter Units Maximum
VDS Drain - Source Voltage V +3
VGS Gate - Source Voltage V -3
VGD Gate Drain Voltage V -3.5
IDDrain Current mA Idss
PTTotal Power Dissipation mW 180
Pin max RF Input Power dBm +10
TCH Channel Temperature °C 150
TSTG Storage Temperature °C - 65 to 150
Thermal Resistance:
θch-c = 160°C/W
Note:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
ATF-36163 Typical Parameters
TC = 25°C, ZO = 50 Ω, Vds = 2 V, Ids = 15 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions Units Typ.
Fmin Minimum Noise Figure (Γsource = Γopt) f = 4 GHz dB 0.6
f = 12 GHz dB 1.0
GaAssociated Gain f = 4 GHz dB 15.8
f = 12 GHz dB 9.4
Gmax Maximum Available Gain[1] f = 4 GHz dB 17.2
f = 12 GHz dB 10.9
P1dB Output Power at 1 dB Gain Compression f = 4 GHz dBm 5
under the power matched condition f = 12 GHz dBm 5
VGS Gate to Source Voltage for IDS = 15 mA VDS = 2.0 V V -0.2
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1, which is shown on the S-parameters tables.
ATF-36163 Electrical Specifications
TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF Noise Figure[1] f =12.0 GHz dB 1.2 1.4[1]
G Gain at NF[1] f = 12.0 GHz dB 9 10
gmTransconductance VDS = 1.5 V, VGS = 0 V mS 50 60
Idss Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 15 25 40
Vp 10% Pinchoff Voltage VDS = 1.5 V, IDS = 10% of Idss V -1.0 -0.35 -0.15
BVGDO Gate Drain Breakdown Voltage IG = 30 µA V -3.5
Note:
1. Measured in a test circuit tuned for a typical device.
3
ATF-36163 Typical Noise Parameters
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
Freq. Fmin GaΓopt Rn/ZO
GHz dB dB Mag. Ang. -
2 0.48 18.77 0.78 28 0.38
3 0.53 16.75 0.75 41 0.32
4 0.57 15.17 0.68 55 0.26
5 0.61 14.14 0.60 71 0.20
6 0.66 13.23 0.55 88 0.15
7 0.71 12.06 0.48 105 0.12
8 0.77 11.22 0.38 119 0.10
9 0.83 10.50 0.32 138 0.07
10 0.89 10.02 0.23 170 0.07
11 0.97 9.44 0.18 -141 0.09
12 1.05 8.92 0.20 -92 0.13
13 1.14 8.45 0.26 -46 0.21
14 1.24 8.12 0.36 -16 0.32
15 1.37 8.08 0.48 4 0.44
16 1.51 8.11 0.59 19 0.60
17 1.68 7.97 0.64 34 0.79
18 1.89 7.59 0.70 51 1.15
ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
Freq. S11 S21 S12 S22 KG
max[1]
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. — dB
0.5 0.99 -11 12.85 4.39 168 -37.72 0.01 79 0.51 -9 0.11 25.24
1 0.98 -22 12.70 4.31 158 -31.70 0.03 71 0.50 -18 0.17 22.26
2 0.96 -42 12.48 4.21 138 -26.02 0.05 55 0.48 -36 0.24 19.28
3 0.93 -61 12.37 4.15 118 -22.73 0.07 40 0.45 -53 0.33 17.56
4 0.87 -83 12.30 4.12 97 -20.45 0.10 23 0.40 -71 0.43 16.38
5 0.81 -106 12.16 4.06 76 -18.71 0.12 6 0.34 -92 0.51 15.43
6 0.75 -131 11.94 3.95 55 -17.52 0.13 -12 0.27 -116 0.58 14.73
7 0.67 -158 11.47 3.75 33 -16.77 0.15 -30 0.18 -144 0.69 14.12
8 0.61 176 11.01 3.55 12 -16.36 0.15 -45 0.10 174 0.79 13.69
9 0.57 143 10.47 3.34 -10 -15.97 0.16 -61 0.12 93 0.85 13.22
10 0.57 108 9.66 3.04 -32 -15.92 0.16 -77 0.22 53 0.91 12.80
11 0.59 76 8.53 2.67 -54 -16.48 0.15 -93 0.33 28 0.99 12.50
12 0.63 50 7.39 2.34 -74 -17.14 0.14 -106 0.41 9 1.07 10.65
13 0.67 26 6.10 2.02 -93 -18.27 0.12 -119 0.49 -8 1.18 9.64
14 0.72 6 4.81 1.74 -111 -19.74 0.10 -129 0.56 -22 1.30 8.99
15 0.78 -11 3.49 1.50 -128 -21.41 0.09 -138 0.63 -33 1.38 8.81
16 0.82 -24 2.20 1.29 -146 -23.10 0.07 -144 0.67 -43 1.44 8.70
17 0.87 -38 0.59 1.07 -164 -25.04 0.06 -151 0.73 -53 1.46 8.79
18 0.90 -52 -1.63 0.83 178 -29.12 0.04 -159 0.78 -65 1.80 8.58
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1.
Figure 1. ATF-36163 Minimum Noise Figure and
Associated Gain vs. Frequency for
VDS = 1.5 V, ID = 10 mA.
Figure 2. Maximum Available Gain, Maximum
Stable Gain & Insertion Power Gain vs.
Frequency for VDS = 1.5 V, ID = 10 mA.
018
2.4
02 6 10 12
2.0
1.2
0.4
14
F
min
(dB)
FREQUENCY (GHz)
0.8
1.6
48 16
24
0
20
12
4
8
16
G
a
(dB)
018
24
02 6 10 12
20
12
4
14
GAIN (dB)
FREQUENCY (GHz)
8
16
48 16
MAG
MSG
|S21|
2
4
ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 15 mA
Freq. S11 S21 S12 S22 KG
max[1]
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. — dB
0.5 0.99 -12 13.56 4.76 168 -38.42 0.01 79 0.45 -9 0.12 25.82
1 0.98 -22 13.40 4.68 157 -32.40 0.02 71 0.45 -18 0.18 22.86
2 0.96 -43 13.16 4.55 137 -26.56 0.05 56 0.43 -36 0.26 19.87
3 0.92 -63 13.00 4.47 116 -23.22 0.07 40 0.40 -52 0.35 18.13
4 0.86 -85 12.87 4.40 96 -21.01 0.09 24 0.35 -70 0.46 16.94
5 0.80 -108 12.68 4.30 75 -19.25 0.11 7 0.28 -92 0.55 15.98
6 0.74 -133 12.38 4.16 53 -18.13 0.12 -11 0.21 -116 0.62 15.25
7 0.66 -160 11.85 3.91 31 -17.39 0.14 -28 0.13 -146 0.74 14.62
8 0.59 173 11.33 3.68 11 -16.95 0.14 -42 0.06 156 0.84 14.14
9 0.56 141 10.74 3.44 -11 -16.54 0.15 -58 0.12 73 0.90 13.63
10 0.56 106 9.89 3.12 -33 -16.42 0.15 -73 0.23 44 0.95 13.16
11 0.59 74 8.74 2.74 -54 -16.83 0.14 -88 0.34 23 1.03 11.78
12 0.63 49 7.59 2.40 -74 -17.39 0.14 -102 0.42 6 1.10 10.62
13 0.68 25 6.29 2.06 -93 -18.42 0.12 -115 0.50 -10 1.19 9.72
14 0.73 5 5.01 1.78 -110 -19.74 0.10 -124 0.57 -23 1.29 9.15
15 0.79 -12 3.70 1.53 -127 -21.31 0.09 -133 0.64 -34 1.35 8.99
16 0.83 -25 2.43 1.32 -144 -22.85 0.07 -139 0.68 -44 1.39 8.93
17 0.87 -38 0.84 1.10 -163 -24.73 0.06 -148 0.73 -54 1.39 9.06
18 0.91 -53 -1.33 0.86 180 -28.87 0.04 -155 0.78 -66 1.67 8.92
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1.
Figure 3. ATF-36163 Minimum Noise Figure and
Associated Gain vs. Frequency for
VDS = 1.5 V, ID = 15 mA.
Figure 4. Maximum Available Gain, Maximum
Stable Gain & Insertion Power Gain vs.
Frequency for VDS = 1.5 V, I D = 15 mA.
018
2.4
02 6 10 12
2.0
1.2
0.4
14
F
min
(dB)
FREQUENCY (GHz)
0.8
1.6
48 16
24
0
20
12
4
8
16
G
a
(dB)
018
24
02 6 10 12
20
12
4
14
GAIN (dB)
FREQUENCY (GHz)
8
16
48 16
MAG
MSG
|S21|
2
ATF-36163 Typical Noise Parameters
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 15 mA
Freq. Fmin GaΓopt Rn/ZO
GHz dB dB Mag. Ang. -
2 0.49 18.87 0.84 28 0.38
3 0.54 17.20 0.74 42 0.31
4 0.58 15.75 0.66 57 0.25
5 0.63 14.49 0.59 72 0.19
6 0.68 13.61 0.54 90 0.15
7 0.73 12.36 0.46 106 0.11
8 0.79 11.54 0.37 121 0.09
9 0.85 10.82 0.30 140 0.08
10 0.91 10.32 0.21 174 0.08
11 0.99 9.73 0.17 -133 0.10
12 1.07 9.22 0.20 -83 0.14
13 1.17 8.68 0.26 -40 0.22
14 1.27 8.41 0.38 -12 0.34
15 1.40 8.36 0.49 7 0.46
16 1.54 8.37 0.60 21 0.64
17 1.72 8.10 0.62 35 0.85
18 1.93 8.00 0.71 52 1.18
5
ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 2.0 V, ID = 10 mA
Freq. S11 S21 S12 S22 K Gmax[1]
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. – dB
0.5 0.99 -11 13.06 4.50 168 -37.72 0.01 79 0.55 -9 0.11 25.46
1 0.99 -22 12.90 4.42 158 -32.04 0.03 71 0.55 -18 0.16 22.46
2 0.96 -42 12.69 4.31 138 -26.38 0.05 56 0.53 -35 0.24 19.50
3 0.93 -62 12.57 4.25 118 -22.97 0.07 40 0.50 -52 0.32 17.77
4 0.87 -83 12.51 4.22 97 -20.72 0.09 23 0.44 -70 0.42 16.61
5 0.81 -106 12.38 4.16 76 -18.94 0.11 6 0.38 -90 0.51 15.67
6 0.75 -131 12.15 4.05 55 -17.79 0.13 -12 0.31 -112 0.58 14.98
7 0.67 -157 11.70 3.84 33 -17.08 0.14 -30 0.21 -137 0.69 14.38
8 0.60 176 11.25 3.65 13 -16.65 0.15 -44 0.13 -168 0.79 13.96
9 0.57 144 10.73 3.44 -10 -16.25 0.15 -60 0.10 115 0.85 13.50
10 0.56 109 9.95 3.14 -32 -16.25 0.15 -76 0.18 61 0.91 13.10
11 0.58 77 8.86 2.77 -53 -16.77 0.15 -91 0.29 32 1.00 12.52
12 0.62 50 7.75 2.44 -73 -17.39 0.14 -104 0.37 12 1.08 10.82
13 0.67 26 6.49 2.11 -93 -18.56 0.12 -117 0.46 -5 1.19 9.85
14 0.72 6 5.24 1.83 -110 -19.91 0.10 -126 0.53 -19 1.31 9.24
15 0.78 -10 3.96 1.58 -128 -21.51 0.08 -134 0.60 -30 1.38 9.07
16 0.82 -24 2.68 1.36 -146 -23.10 0.07 -139 0.65 -40 1.42 9.03
17 0.87 -37 1.08 1.13 -165 -24.88 0.06 -147 0.71 -50 1.38 9.28
18 0.91 -52 -1.16 0.88 177 -28.64 0.04 -153 0.78 -63 1.63 9.06
Figure 5. ATF-36163 Minimum Noise Figure and
Associated Gain vs. Frequency for
VDS = 2.0 V, ID = 10 mA.
Figure 6. Maximum Available Gain, Maximum
Stable Gain & Insertion Power Gain vs.
Frequency for VDS = 2.0 V, ID = 10 mA.
ATF-36163 Typical Noise Parameters
Common Source, ZO = 50 Ω, VDS = 2.0 V, ID = 10 mA
Freq. Fmin GaΓopt Rn/ZO
GHz dB dB Mag. Ang. -
2 0.46 18.60 0.84 28 0.38
3 0.50 16.75 0.76 41 0.31
4 0.54 15.55 0.67 56 0.25
5 0.59 14.20 0.61 70 0.20
6 0.63 13.37 0.55 88 0.15
7 0.68 12.12 0.49 103 0.12
8 0.74 11.35 0.39 118 0.10
9 0.80 10.59 0.33 135 0.07
10 0.86 10.11 0.23 165 0.07
11 0.94 9.57 0.17 -145 0.09
12 1.02 9.08 0.18 -93 0.12
13 1.11 8.59 0.24 -47 0.19
14 1.22 8.30 0.34 -16 0.30
15 1.35 8.29 0.47 5 0.42
16 1.51 8.32 0.58 19 0.57
17 1.69 8.07 0.60 34 0.76
18 1.92 7.68 0.66 50 1.10
018
2.4
02 6 10 12
2.0
1.2
0.4
14
F
min
(dB)
FREQUENCY (GHz)
0.8
1.6
48 16
24
0
20
12
4
8
16
G
a
(dB)
018
24
02 6 10 12
20
12
4
14
GAIN (dB)
FREQUENCY (GHz)
8
16
48 16
MAG
MSG
|S21|
2
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1.
6
ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 2 V, I D = 15 mA
Freq. S11 S21 S12 S22 K Gmax[1]
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. – dB
0.5 0.99 -12 13.85 4.93 168 -38.42 0.01 79 0.51 -9 0.12 26.10
1 0.98 -22 13.70 4.84 157 -32.40 0.02 71 0.50 -18 0.17 23.11
2 0.96 -43 13.45 4.70 137 -26.74 0.05 56 0.48 -35 0.26 20.13
3 0.92 -63 13.29 4.62 117 -23.48 0.07 40 0.45 -52 0.35 18.40
4 0.86 -85 13.16 4.55 96 -21.31 0.09 24 0.40 -69 0.46 17.22
5 0.79 -108 12.96 4.45 75 -19.58 0.11 7 0.33 -90 0.55 16.26
6 0.73 -133 12.67 4.30 53 -18.42 0.12 -10 0.26 -112 0.62 15.54
7 0.65 -160 12.13 4.04 32 -17.72 0.13 -28 0.17 -136 0.75 14.93
8 0.59 173 11.63 3.81 11 -17.27 0.14 -42 0.09 -171 0.84 14.46
9 0.55 141 11.06 3.57 -11 -16.83 0.14 -57 0.09 93 0.90 13.95
10 0.56 107 10.23 3.25 -32 -16.77 0.15 -72 0.19 51 0.96 13.50
11 0.58 75 9.11 2.86 -53 -17.14 0.14 -87 0.30 27 1.04 11.93
12 0.63 49 8.00 2.51 -73 -17.72 0.13 -99 0.38 9 1.11 10.85
13 0.68 26 6.75 2.17 -92 -18.71 0.12 -112 0.47 -7 1.20 10.00
14 0.73 6 5.49 1.88 -110 -20.00 0.10 -121 0.54 -20 1.30 9.45
15 0.78 -11 4.22 1.63 -127 -21.41 0.09 -129 0.61 -31 1.35 9.30
16 0.83 -24 2.99 1.41 -145 -22.73 0.07 -135 0.66 -41 1.36 9.31
17 0.88 -38 1.42 1.18 -164 -24.44 0.06 -143 0.72 -51 1.31 9.56
18 0.91 -52 -0.79 0.91 178 -27.96 0.04 -149 0.78 -63 1.50 9.44
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1.
Figure 7. ATF-36163 Minimum Noise Figure and
Associated Gain vs. Frequency for
VDS = 2 V, ID = 15 mA.
Figure 8. Maximum Available Gain, Maximum
Stable Gain & Insertion Power Gain vs.
Frequency for VDS = 2 V, ID = 15 mA.
ATF-36163 Typical Noise Parameters
Common Source, ZO = 50 Ω, VDS = 2.0 V, I D = 15 mA
Freq. Fmin GaΓopt Rn/ZO
GHz dB dB Mag. Ang. -
2 0.48 18.97 0.83 28 0.37
3 0.52 17.27 0.74 41 0.31
4 0.56 15.75 0.67 56 0.25
5 0.61 14.54 0.60 71 0.19
6 0.65 13.68 0.55 89 0.15
7 0.70 12.47 0.46 104 0.11
8 0.76 11.66 0.37 118 0.09
9 0.82 10.94 0.31 136 0.08
10 0.88 10.44 0.21 168 0.07
11 0.95 9.88 0.15 -137 0.09
12 1.03 9.38 0.18 -85 0.13
13 1.12 8.90 0.25 -41 0.21
14 1.23 8.63 0.36 -13 0.32
15 1.35 8.59 0.48 7 0.44
16 1.49 8.63 0.58 20 0.60
17 1.65 8.68 0.65 34 0.79
18 1.86 8.32 0.70 51 1.10
018
2.4
02 6 10 12
2.0
1.2
0.4
14
F
min
(dB)
FREQUENCY (GHz)
0.8
1.6
48 16
24
0
20
12
4
8
16
G
a
(dB)
018
24
02 6 10 12
20
12
4
14
GAIN (dB)
FREQUENCY (GHz)
8
16
48 16
MAG
MSG
|S21|
2
7
ATF-36163 Typical “Off” Scattering Parameters, Common Source, ZO = 50 Ω,VDS =0 V,
VGS =0 V
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 0.998 -10 -46.02 0.01 80 -46.02 0.01 86 0.703 170
1 0.993 -20 -39.17 0.01 81 -39.17 0.01 83 0.701 160
2 0.99 -37 -32.77 0.02 75 -32.77 0.02 76 0.70 139
3 0.98 -55 -28.64 0.04 67 -28.64 0.04 68 0.71 119
4 0.96 -74 -25.35 0.05 56 -25.19 0.06 57 0.73 99
5 0.94 -95 -22.62 0.07 42 -22.50 0.08 42 0.74 81
6 0.92 -118 -20.45 0.10 27 -20.45 0.10 27 0.75 63
7 0.89 -142 -18.79 0.12 11 -18.71 0.12 11 0.77 46
8 0.86 -168 -17.02 0.14 -6 -17.02 0.14 -5 0.78 30
9 0.84 162 -15.70 0.16 -24 -15.70 0.16 -24 0.81 16
10 0.83 128 -14.85 0.18 -44 -14.85 0.18 -44 0.83 3
11 0.83 94 -14.66 0.19 -64 -14.66 0.19 -64 0.84 -10
12 0.85 64 -14.85 0.18 -83 -14.85 0.18 -83 0.85 -22
13 0.86 36 -15.76 0.16 -101 -15.76 0.16 -101 0.87 -34
14 0.87 12 -17.14 0.14 -116 -17.08 0.14 -115 0.89 -44
15 0.90 -8 -18.71 0.12 -129 -18.71 0.12 -129 0.89 -53
16 0.93 -24 -20.45 0.10 -140 -20.45 0.10 -140 0.90 -62
17 0.93 -39 -23.35 0.07 -154 -23.10 0.07 -152 0.90 -71
18 0.93 -53 -27.96 0.04 -161 -28.18 0.04 -161 0.90 -81
ATF-36163 Typical “Off” Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 2.0 V,
VGS = -1.5 V
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 0.97 -8 -34.89 0.02 82 -34.89 0.02 81 0.999 -7
1 0.98 -16 -28.87 0.04 74 -28.87 0.04 73 0.998 -14
2 0.99 -30 -22.85 0.07 59 -22.97 0.07 59 0.995 -29
3 0.98 -43 -19.33 0.11 44 -19.33 0.11 44 0.98 -43
4 0.97 -57 -16.71 0.15 29 -16.71 0.15 30 0.97 -57
5 0.96 -72 -14.42 0.19 14 -14.47 0.19 14 0.95 -74
6 0.94 -87 -12.62 0.23 -2 -12.65 0.23 -2 0.94 -91
7 0.92 -103 -10.90 0.29 -20 -10.96 0.28 -20 0.92 -107
8 0.89 -119 -9.60 0.33 -37 -9.63 0.33 -37 0.89 -125
9 0.85 -136 -8.09 0.39 -56 -8.09 0.39 -56 0.83 -148
10 0.79 -158 -6.73 0.46 -79 -6.73 0.46 -79 0.79 -174
11 0.74 177 -5.85 0.51 -106 -5.87 0.51 -106 0.75 156
12 0.72 149 -5.71 0.52 -136 -5.71 0.52 -136 0.73 123
13 0.71 114 -6.54 0.47 -170 -6.52 0.47 -170 0.74 86
14 0.75 74 -8.95 0.36 155 -8.92 0.36 156 0.79 50
15 0.82 35 -12.80 0.23 123 -12.69 0.23 123 0.85 18
16 0.89 5 -18.49 0.12 94 -18.20 0.12 95 0.90 -8
17 0.91 -21 -24.88 0.06 79 -24.44 0.06 84 0.91 -30
18 0.92 -42 -27.54 0.04 70 -27.96 0.04 69 0.90 -50
8
Figure 9. Smith Chart with Noise Figure and Available
Gain Circles at 12 GHz, VDS = 1.5 V, ID = 10 mA.
11.5 dB
1.9 dB
1.4 dB
1.3 dB
1.2 dB
1.1 dB
10.5 dB
9.5 dB
Phase Reference Planes
The positions of the reference
planes used to measure S-
Parameters and to specify Γopt for
the Noise Parameters are shown
in Figure 10. As seen in the
illustration, the reference planes
are located at the extremities of
the package leads.
REFERENCE
PLANES
TEST CIRCUIT
Figure 10. Reference Planes.
SOT-363 PCB Layout
A PCB pad layout for the minia-
ture SOT-363 (SC-70) package
used by the ATF-36163 is shown
in Figure 11 (dimensions are in
inches). This layout provides
ample allowance for package
placement by automated
assembly equipment. The layout
is shown with a nominal SOT-363
package footprint superimposed
on the PCB pads.
0.026
0.075
0.016
0.035
Figure 11. PCB Pad Layout
(Dimensions in Inches).
9
Part Number Ordering Information
No. of
Part Number Devices Container
ATF-36163-TR1 3000 7" Reel
ATF-36163-BLK 100 antistatic bag
Package Dimensions
Outline 63 (SOT-363/SC-70)
2.20 (0.087)
2.00 (0.079) 1.35 (0.053)
1.15 (0.045)
1.30 (0.051)
REF.
0.650 BSC (0.025)
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.25 (0.010)
0.15 (0.006)
1.00 (0.039)
0.80 (0.031) 0.20 (0.008)
0.10 (0.004)
0.30 (0.012)
0.10 (0.004)
0.30 REF.
10°
0.425 (0.017)
TYP.
DIMENSIONS ARE IN MILLIMETERS (INCHES)
10
Tape Dimensions and Product Orientation
For Outline 63
Device Orientation
USER
FEED
DIRECTION COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
36 36 36 36
P
P
0
P
2
FW
C
D
1
D
E
A
0
8° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
5° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS W
t
1
8.00 ± 0.30
0.255 ± 0.013 0.315 ± 0.012
0.010 ± 0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS C
T
t
5.4 ± 0.10
0.062 ± 0.001 0.205 ± 0.004
0.0025 ± 0.00004
COVER TAPE
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
5965-4747E (11/99)
