6MBP150RA060 - Fuji Electric

IGBT-IPM R series 600V / 150A 6 in one-package

6MBP150RA060

Features

· Temperature protection provided by directly detecting the junction

temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in

built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Symbol Rating Unit

Min. Max.

DC bus voltage

DC bus voltage (surge)

DC bus voltage (short operating)

Collector-Emitter voltage

INV Collector current DC

1ms

Duty=58.8%

Collector power dissipation One transistor

Junction temperature

Input voltage of power supply for Pre-Driver

Input signal voltage

Input signal current

Alarm signal voltage

Alarm signal current

Storage temperature

Operating case temperature

Isolating voltage (Case-Terminal)

Screw torque Mounting (M5)

Terminal (M5)

VDC

VDC(surge)

VSC

VCES

IC

ICP

-IC

PC

Tj

VCC *1

Vin *2

Iin

VALM *3

IALM *4

Tstg

Top

Viso *5

Item

0

200

0

-

0

-

0

-

-40

-20

-

450

500

400

600

150

300

150

595

150

20

Vz

1

Vcc

15

125

100

AC2.5

3.5 *6

V

A

W

°C

V

mA

V

mA

°C

kV

N·m

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.

*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.

*3 Apply VALM between terminal No. 16 and 10.

*4 Apply IALM to terminal No. 16.

*5 50Hz/60Hz sine wave 1 minute.

*6 Recommendable Value : 2.5 to 3.0 N·m

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

INV Collector current at off signal input

Collector-Emitter saturation voltage

Forward voltage of FWD

ICES

VCE(sat)

VF

VCE=600V input terminal open

Ic=150A

-Ic=150A

– – 1.0 mA

– – 2.8 V

– – 3.0 V

Fig.1 Measurement of case temperature

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6MBP150RA060 IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit)

Power supply current of N-line side three Pre-driver

Input signal threshold voltage (on/off)

Input zener voltage

Over heating protection temperature level

Hysteresis

IGBT chips over heating protection temperature level

Hysteresis

Collector current protection level INV

Over current protection delay time

Under voltage protection level

Hysteresis

Alarm signal hold time

SC protection delay time

Limiting resistor for alarm

fsw=0 to 15kHz Tc=-20 to 100°C *7

ON

OFF

Rin=20k ohm

VDC=0V, Ic=0A, Case temperature, Fig.1

surface of IGBT chips

Tj=125°C

Tj=25°C Fig.2

Tj=25°C Fig.3

Iccp

ICCN

Vin(th)

VZ

TCOH

TCH

TjOH

TjH

IOC

tDOC

VUV

VH

tALM

tSC

RALM

3

10

1.00

1.25

-

110

-

150

-

225

-

11.0

0.2

1.5

-

1425

-

1.35

1.60

8.0

-

20

-

20

-

10

-

2

-

1500

18

65

1.70

1.95

-

125

-

12.5

-

12

1575

mA

V

°C

A

µs

V

ms

µs

ohm

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

ton IC=150A, VDC=300V

toff

trr IF=150A, VDC=300V

0.3 - -

- - 3.6

- - 0.4

µs

Thermal characteristics( Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

Rth(j-c)

Rth(c-f)

- 0.21

- 0.47

0.05 -

°C/W

INV IGBT

FWD

Item Symbol Min. Typ. Max. Unit

DC bus voltage

Operating power supply voltage range of Pre-driver

Switching frequency of IPM

Screw torque Mounting (M5)

Terminal (M5)

VDC 200 - 400 V

VCC 13.5 15 16.5 V

fSW 1 - 20 kHz

- 2.5 - 3.0 N·m

Recommendable value

*7 Switching frequency of IPM

Definition of tsc

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6MBP150RA060 IGBT-IPM

Block diagram

Outline drawings, mm

Mass : 440g

Pre-drivers include following functions

a) Amplifier for driver

b) Short circuit protection

c) Undervoltage lockout circuit

d) Over current protection

e) IGBT chip over heating protection

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6MBP150RA060 IGBT-IPM

Characteristics (Representative)

Control circuit

Power supply current vs. Switching frequency

Switching frequency fsw (kHz) Power supply voltage Vcc (V)

Power supply current Icc (mA)

Input signal threshold voltage

Vin (ON), Vin (OFF), (V)

Input signal threshold voltage

vs. Power supply voltage

Junction temperature Tj (°C)

14

12

10

8

6

4

2

0

Undervoltage VUVT (V)

Undervoltage vs. Junction temperature

Junction temperature Tj (°C)

Undervoltage hysterisis VH (V)

Undervoltage hysterisis vs. Junction temperature

Power supply voltage Vcc (V)

Alarm hold time tALM (msec.)

Alarm hold time vs. Power supply voltage

Power supply voltage Vcc (V)

Overheating protection TCOH,TjOH (°C)

OH hysterisis TCH,TjH (°C)

Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC

Tj=100°C

20 40 60 80 100 120 140 20 40 60 80 100 120 140

12 13 14 15 16 17 18

0 5 10 15 20 25

2.5

2.0

1.5

1.0

0.5

0

12 13 14 15 16 17 18

········· ·········

N-side

P-side

40

35

30

25

20

15

10

5

0

Tj=25°C

Tj=125°C

1.0

0.8

0.6

0.4

0.2

0

3.0

2.5

2.0

1.5

1.0

0.5

0

200

150

100

50

0

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6MBP150RA060 IGBT-IPM

Inverter

Collector current vs. Collector-Emitter voltage

Collector-Emitter voltage VCE (V)

Collector current Ic (A)

Collector current vs. Collector-Emitter voltage

Collector-Emitter voltage VCE (V)

Collector current Ic (A)

Switching time vs. Collector current

Collector current IC (A)

Switching time ton, toff (nsec.)

Switching time vs. Collector current

Collector current IC (A)

Switching time ton, toff (nsec.)

Forward current vs. Forward voltage

Foeward voltage VF (V)

Forward current IF (A)

Foeward current IF (A)

Reverse recovery current Irr (A)

Reverse recovery time trr (nsec.)

Reverse recovery characteristics trr, Irr, vs. IF

0 1 2 3 4

Tj=25°C

0 1 2 3 4 0 1 2 3 4

300

250

200

150

100

50

0

Tj=125°C

0 50 100 150 200 250 0 50 100 150 200 250

300

250

200

150

100

50

0 0 50 100 150 200 250

300

250

200

150

100

50

0

Edc=300V, Vcc=15V, Tj=25°C

1000

100

Edc=300V, Vcc=15V, Tj=125°C

1000

100

10

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6MBP150RA060 IGBT-IPM

Transient thermal resistance

Pulse width Pw (sec.)

0.001 0.01 0.1 1

1

0.1

0.01

Thermal resistance Rth(j-c) (°C/W)

Inverter

Reverse biased safe operating area

Collector-Emitter voltage VCE (V)

1500

1350

1200

1050

900

750

600

450

300

150

0

Collector current Ic (A)

Power derating for IGBT (per device)

Case temperature Tc (°C)

0 20 40 60 80 100 120 140 160

700

600

500

400

300

200

100

0

Collector power dissipation Pc (W)

Power derating for FWD (per device)

Case temperature Tc (°C)

300

250

200

150

100

50

0

Collector power dissipation Pc (W)

Switching loss vs. Collector current

Collector current Ic (A)

Switching loss Eon,Eoff,Err (mJ/cycle)

Switching loss vs. Collector current

Collector current Ic (A)

Switching loss Eon,Eoff,Err (mJ/cycle)

0 20 40 60 80 100 120 140 160

Edc=300V, Vcc=15V, Tj=125°C

0 100 200 300 400 500 600 700

0 50 100 150 200 250

<

=

Vcc=15V, Tj 125°C

Edc=300V, Vcc=15V, Tj=25°C

30

25

20

15

10

5

0 0 50 100 150 200 250

30

25

20

15

10

5

0

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6MBP150RA060 IGBT-IPM

Overcurrent protection vs. Junction temperature

Junction temperature Tj (°C)

Overcurrent protection level Ioc (A)

0 20 40 60 80 100 120 140

Vcc=15V

420

360

300

240

180

120

60

0

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