© 2013 IXYS CORPORATION, All Rights Reserved
Power MOSFETs
DS94535L(01/13)
Features
zInternational Standard Packages
zLow RDS (on) HDMOSTM Process
zRugged Polysilicon Gate Cell Structure
z Avalanche Rated
zLow Package Inductance
- Easy to Drive and to Protect
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
IXTH11P50
IXTT11P50
P-Channel Enhancement Mode
Avalanche Rated
VDSS = - 500V
ID25 = - 11A
RDS(on) ≤≤
≤≤
≤ 750mΩΩ
ΩΩ
Ω
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 500 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C - 11 A
IDM TC= 25°C, Pulse Width Limited by TJM - 44 A
IATC= 25°C - 11 A
EAS TC= 25°C1J
PDTC= 25°C 300 W
TJ- 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
Tsold Plastic Body for 10 seconds 260 °C
MdMounting Torque (TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
G
SD (Tab)
D
TO-268 (IXTT)
S
G
D (Tab)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA - 500 V
BVDSS Temperature Coefficient 0.09 %/K
VGS(th) VDS = VGS, ID = - 250μA - 3.0 - 5.0 V
VGS(th) Temperature Coefficient - 0.25 %/K
IGSS VGS = ± 20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V - 200 μA
TJ = 125°C -1 mA
RDS(on) VGS = 10V, ID = - 5.5A, Note 1 750 mΩ
RDS(on) Temperature Coefficient 0.92 %/K
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH11P50
IXTT11P50
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
e
∅ P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 6 11 S
Ciss 4600 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 500 pF
Crss 187 pF
td(on) 26 ns
tr 32 ns
td(off) 80 ns
tf 34 ns
Qg(on) 145 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 nC
Qgd 55 nC
RthJC 0.42 °C/W
RthCS TO-247 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 11 A
ISM Repetitive, Pulse Width Limited by TJM - 44 A
VSD IF = IS, VGS = 0V, Note 1 - 3.0 V
trr 500 ns
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7Ω (External)
IF = -11A, -di/dt = -100A/μs
VR = -100V, VGS = 0V
© 2013 IXYS CORPORATION, All Rights Reserved
IXTH11P50
IXTT11P50
Fi g. 1. Outpu t C harac ter i stics @ TJ = 25ºC
-12
-10
-8
-6
-4
-2
0-7-6-5-4-3-2-10
V
DS
- Volts
I
D
- Amperes
V
GS
= - 10V
- 7V
- 5
V
- 6
V
Fi g . 2. Exte n d ed Ou tput Char ac ter i sti cs @ TJ = 25ºC
-40
-36
-32
-28
-24
-20
-16
-12
-8
-4
0-30-25-20-15-10-50
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 8V
- 5
V
- 6
V
- 7
V
Fi g . 3. Ou tput C haract er i sti cs @ TJ = 125ºC
-12
-10
-8
-6
-4
-2
0-14-12-10-8-6-4-20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 7V
- 4V
- 5V
- 6V
Fig. 4. RDS(on) Normalized to ID = - 5. 5A Valu e vs.
Junction T emperature
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Deg re es Centi grade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= -11A
I
D
= - 5.5A
Fig. 5. RDS(on) Normalized to ID = - 5. 5A Valu e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-40-35-30-25-20-15-10-50
I
D
- Ampere s
R
DS(on)
- Normali zed
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fi g. 6. Maximu m Dr ai n Cu rren t vs.
Case Temper a tu r e
-12
-10
-8
-6
-4
-2
0-50-250255075100125150
T
C
- Deg re es Centi grade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH11P50
IXTT11P50
Fig. 7. Input Admittance
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0-6.2-5.8-5.4-5.0-4.6-4.2-3.8-3.4-3.0
V
GS
- V olts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
4
8
12
16
20
24
-22-20-18-16-14-12-10-8-6-4-20
I
D
- A mperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 9. F or war d Vol tag e Dr o p of I n tri n si c Di o d e
-35
-30
-25
-20
-15
-10
-5
0-2.5-2.0-1.5-1.0-0.50.0
V
SD
- V olts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
00 20406080100120140
Q
G
- NanoCoul ombs
V
GS
- Volts
V
DS
= - 250V
I
D
= - 5.5A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacit ance - PicoFarads
f
= 1 MH
z
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Second s
Z
(th)JC
- ºC / W
© 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_11P50(7X-L64)7-19-12
IXTH11P50
IXTT11P50
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
0.1
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
----
-100ms
Fig. 14. Forward-Bias Safe Operating Area
@ T
C
= 75ºC
0.1
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
----
-
100ms
