APTGT75X120TE3 3 Phase bridge Trench IGBT(R) Power Module VCES = 1200V IC = 75A @ Tc = 80C Application * AC Motor control Features Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring * * * * * 17 16 15 Benefits 20 14 21 13 1 2 3 4 5 6 7 8 9 10 Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Operating Area Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile 11 12 Absolute maximum ratings Symbol VCES * * * * * * * TC = 25C Max ratings 1200 100 75 175 20 350 Tj = 125C 150A@1100V TC = 25C TC = 80C TC = 25C Unit V A July, 2003 18 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com http://store.iiic.cc/ 1-3 APTGT75X120TE3 - Rev 0 19 APTGT75X120TE3 VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current All ratings @ Tj = 25C unless otherwise specified Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eoff Turn off Energy Min Typ Max 1200 1.4 1.7 2.0 5.0 Min Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A RG = 4.7 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A RG = 4.7 Fall Time Tf Test Conditions VGE = 0V, IC = 5mA VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 75A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Typ 5340 280 240 260 30 420 5 2.1 Symbol Characteristic VF Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions IF = 75A VGE = 0V IF = 75A VR = 600V di/dt =825A/s IF = 75A VR = 600V di/dt =825A/s V nA Max Unit pF ns 70 285 45 ns 520 90 Tj = 25C Tj = 125C Min Typ 1.6 1.6 Tj = 25C 3 Tj = 125C 6 Tj = 25C 7.6 Tj = 125C 13.7 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25C B 25/50 T25 = 298.16 K RT = Min R25 exp B25 / 50 1 1 - T25 T V 6.5 500 9.5 Reverse diode ratings and characteristics Unit V mA Typ 5 3375 mJ Max 2.1 Unit V mJ C Max Unit k K July, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current T: Thermistor temperature RT: Thermistor value at T APT website - http://www.advancedpower.com http://store.iiic.cc/ 2-3 APTGT75X120TE3 - Rev 0 Electrical Characteristics APTGT75X120TE3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight IGBT Diode Typ Max 0.35 0.58 2500 M5 -40 -40 -40 3 Unit C/W V 150 125 125 4.5 300 C N.m g Package outline PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com http://store.iiic.cc/ 3-3 APTGT75X120TE3 - Rev 0 July, 2003 PIN 21