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These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS10KMJ-06 HIGH-SPEED SWITCHING USE FS10KMJ-06 OUTLINE DRAWING Dimensions in mm 3 0.3 6.5 0.3 2.8 0.2 f 3.2 0.2 3.6 0.3 14 0.5 15 0.3 10 0.3 1.1 0.2 1.1 0.2 E 0.75 0.15 w 2.6 0.2 1 2 3 4V DRIVE VDSS ................................................................................. 60V rDS (ON) (MAX) ............................................................. 70m ID ........................................................................................ 10A Integrated Fast Recovery Diode (TYP.) ............ 55ns Viso ............................................................................... 2000V 0.75 0.15 2.54 0.25 4.5 0.2 2.54 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA Avalanche drain current (Pulsed) IS ISM Source current Source current (Pulsed) PD T ch Maximum power dissipation Channel temperature T stg Viso Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value -- VGS = 0V VDS = 0V L = 100H Ratings Unit 60 20 V V 10 40 A A 10 A 10 40 A A 20 -55 ~ +150 W C -55 ~ +150 2000 C V 2.0 g Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KMJ-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions Unit Min. Typ. Max. 60 -- -- -- -- 0.1 V A -- 1.0 -- 1.5 0.1 2.0 mA V -- 53 70 m -- -- 66 0.265 91 0.35 m V -- -- 13 800 -- -- S pF -- -- 190 80 -- -- pF pF -- -- 14 17 -- -- ns ns -- 65 -- ns -- -- 40 1.0 -- 1.5 ns V -- -- -- 55 6.25 -- C/W ns ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, V GS = 4V ID = 5A, V GS = 10V ID = 5A, V DS = 5V VDS = 10V, VGS = 0V, f = 1MHz VDD = 30V, I D = 5A, V GS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = -100A/s PERFORMANCE CURVES DRAIN CURRENT ID (A) 32 24 16 8 0 0 20 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 50 100 200 100ms 1ms 100 7 5 3 2 10ms TC = 25C Single Pulse DC 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) Tc = 25C Pulse Test 16 150 tw = 10ms 101 7 5 3 2 10-1 7 5 10 6V VGS = 10V 4V 8V 4V 6V 8V VGS = 10V 12 PD = 20W 8 3V 4 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 40 8 6 3V 4 2 Tc = 25C Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KMJ-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.2 0.8 ID = 15A 10A 0.4 5A 0 2 4 6 Tc = 25C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 8 7 5 3 2 103 7 5 3 2 102 7 5 3 2 10V 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 16 104 40 TRANSFER CHARACTERISTICS (TYPICAL) 24 2 60 DRAIN CURRENT ID (A) 32 0 VGS = 4V 80 0 10 Tc = 25C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 40 DRAIN CURRENT ID (A) 8 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) 1.6 0 CAPACITANCE Ciss, Coss, Crss (pF) 100 Tc = 25C Pulse Test 102 7 5 4 3 2 VDS = 5V Pulse Test 75C TC = 25C 125C 101 7 5 4 3 2 0 2 4 6 8 100 0 10 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C f = 1MHZ VGS = 0V Ciss Coss Crss 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 102 7 5 4 3 td(off) tf 2 td(on) 101 7 5 4 3 tr Tch = 25C VDD = 30V VGS = 10V RGEN = RGS = 50 2 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KMJ-06 HIGH-SPEED SWITCHING USE 10 SOURCE CURRENT IS (A) VDS = 10V 6 20V 40V 4 2 0 4 8 12 16 24 TC = 125C 8 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 2 100 7 5 4 3 2 -50 0 50 100 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 75C 25C 16 0 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10-1 VGS = 0V Pulse Test 32 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) 40 Tch = 25C ID = 10A 8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 D = 1.0 5 0.5 3 2 0.2 100 7 5 3 2 PDM 0.1 0.05 0.02 0.01 Single Pulse tw T D= tw T 10-1 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999