MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HB-66H IC ................................................................... 800A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 570.25 4 - M8 NUTS E CM C 3 - M4 NUTS E C E E G E 140 124 0.25 C 40 C C C 20 570.25 E G CIRCUIT DIAGRAM 10.35 10.65 6 - 7MOUNTING HOLES 48.8 15 61.5 40 28 38 5 LABEL 29.5 5.2 18 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 http://store.iiic.cc/ MITSUBISHI HVIGBT MODULES CM800HB-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM I E (Note 2) I EM(Note 2) P C (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage -- Mounting torque -- Mass Conditions Ratings Unit -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value 3300 20 800 1600 800 1600 10400 -40 ~ +150 -40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 V V A A A A W C C V N*m N*m N*m kg VGE = 0V VCE = 0V DC, TC = 100C Pulse (Note 1) Pulse TC = 25C, IGBT part (Note 1) ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance ICES Note 1. 2. 3. 4. VCE = VCES, VGE = 0V Min -- Limits Typ -- Max 10 IC = 80mA, VCE = 10V 4.5 6.0 7.5 V VGE = VGES, VCE = 0V Tj = 25C IC = 800A, VGE = 15V Tj = 125C -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3.80 4.00 120 12.0 3.6 5.7 -- -- -- -- 2.80 -- 270 -- -- 0.008 0.5 4.94 -- -- -- -- -- 1.60 2.00 2.50 1.00 3.64 1.40 -- 0.012 0.024 -- A Item Conditions (Note 4) VCE = 10V VGE = 0V VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A, die / dt = -1600A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Note 1) Unit mA V nF nF nF C s s s s V s C K/W K/W K/W Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed T jmax rating. IE , VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 http://store.iiic.cc/ MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 1600 COLLECTOR CURRENT IC (A) VGE=13V VGE=12V VGE=14V 1200 VGE=11V VGE=10V VGE=15V VGE=20V 800 VGE=9V 400 VGE=8V COLLECTOR CURRENT IC (A) 1600 Tj=25C VCE=10V 1200 800 400 Tj = 25C Tj = 125C VGE=7V 2 4 6 8 0 10 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 8 VGE=15V 6 4 2 Tj = 25C Tj = 125C 0 400 800 1200 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 0 EMITTER-COLLECTOR VOLTAGE VEC (V) 0 8 IC = 1600A 6 IC = 800A 4 2 IC = 320A 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 6 4 2 Tj = 25C Tj = 125C 0 Tj = 25C COLLECTOR CURRENT IC (A) 8 0 10 0 1600 400 800 1200 CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0 1600 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 VGE = 0V, Tj = 25C Cies, Coes : f = 100kHz : f = 1MHz Cres Cies Coes Cres 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) Mar. 2003 http://store.iiic.cc/ MITSUBISHI HVIGBT MODULES CM800HB-66H SWITCHING ENERGY (J/P) td(off) 100 7 5 td(on) tr 3 2 10-1 7 5 REVERSE RECOVERY TIME trr (s) 3 2 tf VCC = 1650V, VGE = 15V RG = 2.5, Tj = 125C Inductive load 5 7 102 5 7 103 2 3 2 3 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1650V, Tj = 125C 3 3 Inductive load 2 2 VGE = 15V, RG = 2.5 103 7 5 3 2 100 7 5 5 3 2 trr 5 7 102 2 3 5 7 103 2 3 5 102 7 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 VCC = 1650V, VGE = 15V, RG = 2.5, Tj = 125C, 2.5 Inductive load HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 10 VCC = 1650V, IC = 800A, VGE = 15V, Tj = 125C, 8 Inductive load 2.0 Eon 1.5 Eoff 1.0 Erec 0.5 0 0 400 800 1200 6 2 0 1600 Eoff 0 10 20 CURRENT (A) GATE RESISTANCE () GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) VCC = 1650V IC = 800A 16 12 8 4 0 Eon 4 101 7 5 3 2 20 GATE-EMITTER VOLTAGE VGE (V) Irr 101 7 5 SWITCHING ENERGY (J/P) SWITCHING TIMES (s) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 0 2000 4000 6000 8000 10000 REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 30 Single Pulse TC = 25C Rth(j - c)Q = 0.012K/W Rth(j - c)R = 0.024K/W 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 GATE CHARGE QG (nC) TIME (s) Mar. 2003 http://store.iiic.cc/