AWT6310RM23P9 - ANADIGICS, Inc.

09/2008

AWT6310R

Dual-band CDMA/PCS 3.4 V/28 dBm

Linear Power Amplier Module

Data Sheet - Rev 2.0

M23 Package

12 Pin 3 mm x 5 mm x 1 mm

Surface Mount Module

FEATURES

• Single Mode Operation: POUT  +28 dBm

• High Efciency: 39 %

• 25 % Package Size Reduction

• Common VMODE Control Line

• Simplied VCC Bus PCB routing

• Reduced External Component Count

• Low Prole Surface Mount Package: 1.1 mm

• RoHS Compliant Package, 250 oC MSL-3

APPLICATIONS

• CDMA/EVDO Cell & PCS dual-band Wireless

Handsets and Data Devices

PRODUCT DESCRIPTION

The AWT6310R meets the increasing demands for

higher levels of integration in dual-band CDMA/PCS

1X handsets, while reducing board area requirements

by 25 %. The package pinout was chosen to enable

handset manufacturers to easily route VCC to both

power ampliers and simplify control with a common

VMODE pin. The device is manufactured on an advanced

InGaP HBT MMIC technology offering state-of-the-art

reliability, temperature stability, and ruggedness.

Selectable bias modes that optimize efciency for

different output power levels, and a shutdown mode

with low leakage current, serve to increase handset

talk and standby time. The self contained 3 mm x 5 mm

x 1 mm surface mount package incorporates matching

networks optimized for output power, efciency and

linearity in a 50 Ω system.

Figure 1: Block Diagram

AW T6310R

Bias Control

V

REF_CELL

V

CC1

RF

IN_CELL

RF

OUT_CELL

V

CC2

V

MODE

1

11

9

12

10

3

4

2

GND

V

CC2

A

5

6

8

7

Bias Control

GND

RF

OUT_PCS

V

REF_PCS

RF

IN_PCS

GNDatslug (pad)

GND

2Data Sheet - Rev 2.0

09/2008

AWT6310R

Table 1: Pin Description

Figure 2: Pinout

VREF_PCS RFOUT_PCS

RFIN_PCS

VMODE

GND

1

GND

12

2

3

4

58

11

10

9VCC2

GND

67

VCC1

RFIN_CELL

VREF_CELL

RFOUT_CELL

VCC2A

PIN NAME DESCRIPTION

1VREF_CELL Reference Voltage for Cell Band

2RFIN_CELL RF Input for Cell Band

3 VMODE Mode Control Voltage

4 VCC1 Supply Voltage

5RFIN_PC S RF Input for PCS Band

6VREF_PCS Reference Voltage for PCS Band

7RFOUT_PCS RF Output for PCS Band

8GND Ground

9VCC2 Supply Voltage

10 VCC2ASupply Voltage

11 RFOUT_CELL RF Output for Cell Band

12 GND Ground

Data Sheet - Rev 2.0

09/2008

AWT6310R

3

ELECTRICAL CHARACTERISTICS

Table 2: Absolute Minimum and Maximum Ratings

Stresses in excess of the absolute ratings may cause permanent damage.

Functional operation is not implied under these conditions. Exposure

to absolute ratings for extended periods of time may adversely affect

reliability.

Table 3: Operating Ranges

The device may be operated safely over these conditions; however, parametric performance is guaranteed only

over the conditions dened in the electrical specications.

Notes:

(1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB.

PARAMETER MIN MAX UNIT

Supply Voltage (VCC )

With RF Drive

DC Only

0

+5

+8 V

Mode Control Voltage (VMODE) 0 +3.5 V

Reference Voltage (VREF) 0 +3.5 V

RF Input Power (PIN) - +10 dBm

Storage Temperature (TSTG)-40 +150 °C

PARAMETER MIN TYP MAX UNIT COMMENTS

Operating Frequency (f) 824

1850 -849

1910 MHz Cellular

PCS

Supply Voltage (V

CC

)+3.2 +3.4 +4.2 V

Reference Voltage (V

REF

)+2.75

0

+2.85

-

+3.1

+0.5 VPA "on"

PA "shut down"

Mode Control Voltage (V

MODE

)+2.5

0

+2.85

-

+3.1

+0.5 VLow Bias Mode

High Bias Mode

RF Output Power (P

OUT

)30.5

(1)

27.5

(1)

31.0

28.0

-

-dBm AMPS

CDMA

Case Temperature (T

C

)-30 -+85 °C

4Data Sheet - Rev 2.0

09/2008

AWT6310R

Table 4: Electrical Specications - Cellular CDMA Operation

(Unless Otherwise Specied: TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, 50 Ω system)

Notes:

(1) PAE and ACP limit applies at 836.5 MHz.

PARAMETER MIN TYP MAX UNIT COMMENTS

Gain

24.5

24.0

26.5

25.5

29.0

28.0

dB

P

OUT

= +28 dBm, V

MODE

= 0 V

P

OUT

= +28 dBm, V

MODE

= +2.85 V

P

OUT

= +16 dBm, V

MODE

= +2.85 V

Adjacent Channel Power

at 885 kHz offset

(1)

Primary Channel BW = 1.23 MHZ

Adjacent Channel BW = 30 kH

-

-50

-51

-50

-47

-47 dBc

P

OUT

= +28 dBm, V

MODE

= 0 V

P

OUT

= +28 dBm, V

MODE

= +2.85 V

P

OUT

= +16 dBm, V

MODE

= +2.85 V

Adjacent Channel Power

at 1.98 MHz offset

(1)

Primary Channel BW = 1.23 MHZ

Adjacent Channel BW = 30 kHz

-

-62

-61

-65

-57

-56

-57 dBc

P

OUT

= +28 dBm, V

MODE

= 0 V

P

OUT

= +28 dBm, V

MODE

= +2.85 V

P

OUT

= +16 dBm, V

MODE

= +2.85 V

Power-Added Efficiency

(1)

37

8

39

40

9

-

%

P

OUT

= +28 dBm, V

MODE

= 0 V

P

OUT

= +28 dBm, V

MODE

= +2.85 V

P

OUT

= +16 dBm, V

MODE

= +2.85 V

Quiescent Current (Icq) -50 70 mA V

MODE

= +2.85 V, Low Bias

Reference Current -1.5 3mA through V

REF

Mode Control Current -0.6 1.0 mA through V

MODE

Leakage Current -<1 5AV

CC

= +4.2 V, V

REF

= 0 V,

V

MODE

= 0 V

Noise in Receive Band --133 -131 dBm/Hz 869 MHz to 894 MHz

Harmonics

2fo

3fo, 4fo

-

-46

-50

-30

-30 dBc

Input Impedance - - 2:1 VSWR

Spurious Output Level

(all spurious outputs) - - -65 dBc

P

OUT

< +28 dBm

In-band Load VSWR < 5:1

Out-of-band Load VSWR < 10:1

Applies over all operating

conditions

Load mismatch stress with no

permanent degradation or failure 10:1 - - VSWR Applies over all operating

conditions

Data Sheet - Rev 2.0

09/2008

AWT6310R

5

Table 5: Electrical Specications - PCS Operation

(Unless Otherwise Specied: TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, 50 Ω system)

Notes:

(1) ACPRs and efciency limits at mid-band only.

PARAMETER MIN TYP MAX UNIT COMMENTS

Gain

24.5

24.0

23.0

26.5

26.0

25.5

29.0

28.0

dB

P

OUT

= +28 dBm, V

MODE

= 0 V

P

OUT

= +28 dBm, V

MODE

= +2.85 V

P

OUT

= +16 dBm, V

MODE

= +2.85 V

Adjacent Channel Power

at +1.25 MHz offset

Primary Channel BW - 1.23 MHz

Adjacent Channel BW = 30 kHz

-

-50

-54

-47

-47 dBc

P

OUT

= +28 dBm, V

MODE

= 0 V

P

OUT

= +28 dBm, V

MODE

= +2.85 V

P

OUT

= +16 dBm, V

MODE

= +2.85 V

Adjacent Channel Power

at +2.25 MHz offset

Primary Channel BW - 1.23 MHz

Adjacent Channel BW = 30 kHz

-

-62

-61

-67

-57

-56

-57 dBc

P

OUT

= +28 dBm, V

MODE

= 0 V

P

OUT

= +28 dBm, V

MODE

= +2.85 V

P

OUT

= +16 dBm, V

MODE

= +2.85 V

Power-Added Efficiency

35.5

36

8

38

39

9

-

%

P

OUT

= +28 dBm, V

MODE

= 0 V

P

OUT

= +28 dBm, V

MODE

= +2.85 V

P

OUT

= +16 dBm, V

MODE

= +2.85 V

Quiescent Current (Icq) -50 70 mA V

MODE

= +2.85 V

Reference Current -2.3 4mA through V

REF

pin, PA "on"

Mode Control Current -0.6 1.0 mA through V

MODE

pin, V

MODE

= +2.85 V

Leakage Current -<1 5µA V

CC

= +4.2 V, V

REF

= 0 V,

V

MODE

= 0 V

Noise in Receive Band --133 -131 dBm/Hz 1930 MHz to 1990 MHz

Harmonics

2fo

3fo, 4fo

-

-46

-55

-30

-30 dBc

Input Impedance - - 2:1 VSWR

Spurious Output Level

(all spurious outputs) - - -65 dBc

P

OUT

< +28 dBm

In-band load VSWR < 5:1

Out-of-band load VSWR < 10:1

Applies over all operating ranges

Load mismatch stress with no

permanent degradation or failure 8:1 - - VSWR Applies over full operating range

6Data Sheet - Rev 2.0

09/2008

AWT6310R

APPLICATION INFORMATION

To ensure proper performance, refer to all related

Application Notes on the ANADIGICS web site:

http://www.anadigics.com

Shutdown Mode

The power amplier may be placed in a shutdown

mode by applying a logic low levels (see Operating

Ranges table) to both the VREF and VMODE voltages.

Table 7: Bias Control

Bias Modes

The power amplier may be placed in either a Low Bias

mode or a High Bias mode by applying the appropriate

logic level (see Operating Ranges table) to the VMODE

voltage. The Bias Control table lists the recommended

modes of operation for various applications.

Figure 3: Application Circuit

APPLICATION

P

OUT

LEVELS

BIAS

MODE V

REF

V

MODE

CDMA - low power <28 dBm Low +2.85 V +2.85 V

CDMA - high power >16 dBm High +2.85 V 0 V

Shutdown -Shutdown 0 V 0 V

Bias Control

RFIN_CELL

1

11

9

12

10

3

4

2

GND

5

6

8

7

Bias Control

GND

RFIN_PCS

GNDatslug (pad)

GND

VMODE

VCC1

VREF_CELL

VREF_PCS

VCC2

1000 pF

15 pF

3.9 nH

68 pF

1000 pF

0.01 F

2.2 F

0.01 F

TRL

Note 1

Note:

1. 3.9 nH Inductor should be rated for >1 Amp.

Data Sheet - Rev 2.0

09/2008

AWT6310R

7

PACKAGE OUTLINE

Figure 4: Package Outline - 12 Pin 3 mm x 5 mm x 1 mm Surface Mount Module

Figure 5: Branding Specication

6310R

LLLLNN

BBBBCC

YYWW

1. ANADIGICS LOGO SIZE: NONE

2. PART NUMBER: FOUR DIGIT NUMERICAL

3. WAFER LOT NUMBER: LLLL = LOT NUMBER

NN = WAFER I.D.

4. PIN 1 INDICATOR: LASER DOT

5. B.O.M. #: BBBB

6. COUNTRY CODE CC = TH-for-THAILAND, TW-for-TAIWAN

CC = PH-for-PHILIPPINES, CH-for-CHIN

A

7. YEAR & WORK WEEK YY = YEAR, WW = WORK WEAK

8. TYPE: ARIAL

SIZE: 1.5-POINT

COLOR: LASER

WARNING

ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product

in any such application without written consent is prohibited.

IMPORTANT NOTICE

ANADIGICS, Inc.

141 Mount Bethel Road

Warren, New Jersey 07059, U.S.A.

Tel: +1 (908) 668-5000

Fax: +1 (908) 668-5132

URL: http://www.anadigics.com

E-mail: Mktg@anadigics.com

ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.

The product specications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to

change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed

to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers

to verify that the information they are using is current before placing orders.

Data Sheet - Rev 2.0

09/2008

8

AWT6310R

ORDERING INFORMATION

ORDER

NUMBER

TEMPERATURE

RANGE

PACKAGE

DESCRIPTION COMPONENT PACKAGING

AWT6310RM23Q7 -30 °C to +85 °C

RoHS Compliant 12 Pin

3 mm x 5 mm x 1 mm

Surface Mount Module

Tape and Reel, 2500 pieces per Reel

AWT6310RM23P9 -30 °C to +85 °C

RoHS Compliant 12 Pin

3 mm x 5 mm x 1 mm

Surface Mount Module

Partial Tape and Reel