Si8239x Data Sheet 4.0 A ISODrivers with 2.5 V VDDI and Safety Features KEY FEATURES The Si8239x combines two isolated drivers with either an independent input control or a single input into a single package for high power applications. All drivers operate with a 2.5 V input VDD and a maximum drive supply voltage of 24 V. The Si8239x isolators are ideal for driving power MOSFETs and IGBTs used in a wide variety of switched power and motor control applications. These drivers utilize Silicon Laboratories' proprietary silicon isolation technology, supporting up to 5 kVRMS withstand voltage. This technology enables high CMTI (100 kV/s), lower prop delays and skew, reduced variation with temperature and age and tighter part-to-part matching. It also offers some unique features such as an output UVLO fault detection and feedback, and automatic shutdown for both drivers, an EN (active high) pin, a safe delayed start-up time of 1 ms, fail-safe drivers with default low in case of VDDI power-down, and dead time programmability. The Si8239x family offers longer service life and dramatically higher reliability compared to opto-coupled gate drivers. Automotive Grade is available for certain part numbers. These products are built using automotive-specific flows at all steps in the manufacturing process to ensure the robustness and low defectivity required for automotive applications. Industrial Applications * Power Delivery Systems * Motor Control Systems * Isolated DC-DC Power Supplies * Lighting Control Systems * Solar and Industrial Inverters Safety Approvals (Pending) * UL 1577 recognized * Up to 5000 Vrms for 1 minute * CSA component notice 5A approval * IEC 60950-1 * VDE certification conformity * VDE 0884-10 * EN 60950-1 (reinforced insulation) * CQC certification approval * GB4943.1 silabs.com | Building a more connected world. Automotive Applications * On-board chargers * Battery management systems * Charging stations * Traction inverters * Hybrid Electric Vehicles * Battery Electric Vehicles * Two isolated drivers in one package * Up to 5 kVRMS isolation * Up to 1500 VDC peak driver-to-driver differential voltage * Enhanced output UVLO safety * Status feedback to controller * Both outputs drive low on UVLO * EN pin for enhanced safety * Extended VDDI: 2.5 V - 5.5 V * PWM and dual driver versions * 4.0 A peak output * High electromagnetic immunity * Extended start-up time (1ms) for safe initialization sequence * 30 ns propagation delay * Transient immunity: 100 kV/s * Programmable dead time * 10-200 ns * 40-600 ns * Deglitch option for filtering noise * Wide operating range * -40 to +125 C * RoHS-compliant packages * SOIC-16 wide body * SOIC-16 narrow body * AEC-Q100 qualified * Automotive-grade OPNs available * AIAG compliant PPAP documentation support * IMDS and CAMDS listing support Rev. 1.01 Table of Contents 1. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2. System Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 Typical Performance Characteristics . . . . . . . . . . . . . . . . . . 7 2.2 Family Overview and Logic Operation During Startup 2.2.1 Device Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 . 9 2.3 Power Supply Connections . . . . . . . . . . . . . . . . . . . . . . . . . . .11 2.4 Power Dissipation Considerations . . . . . . . . . . . . . . . . . . . . . . .12 2.5 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . .13 2.6 Undervoltage Lockout Operation 2.6.1 Device Startup . . . . 2.6.2 Undervoltage Lockout . . 2.6.3 Control Inputs . . . . . 2.6.4 Enable Input . . . . . 2.6.5 Delayed Startup Time . . 2.6.6 RDY Pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 .14 .15 .16 .16 .16 .16 2.7 Programmable Dead Time and Overlap Protection . . . . . . . . . . . . . . . . .17 2.8 De-glitch Feature . . . . . . . . . . . . . . . . . .17 3. Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 . . . . . . . . . . . . . . . 3.1 High-Side/Low-Side Driver . . . . . . . . . . . . . . . . . . . . . . . . .18 3.2 Dual Driver . . . . . . . . . . . . . . . . . . . . . . . . . .19 . . . . . 4. Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 20 5. Top-Level Block Diagrams 6. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . 29 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 7. Package Outline: 16-Pin Wide Body SOIC. . . . . . . . . . . . . . . . . . . . 33 8. Land Pattern: 16-Pin Wide Body SOIC . . . . . . . . . . . . . . . . . . . . . 35 9. Package Outline: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . 36 10. Land Pattern: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . 37 11. Top Markings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 11.1 Si8239x Top Marking (16-Pin Wide Body SOIC) . . . . . . . . . . . . . . . . . .38 11.2 Top Marking Explanation (16-Pin Wide Body SOIC). . . . . . . . . . . . . . . . .38 11.3 Si8239x Top Marking (16-Pin Narrow Body SOIC) . . . . . . . . . . . . . . . . .39 11.4 Top Marking Explanation (16-Pin Narrow Body SOIC) . . . . . . . . . . . . . . . .39 12. Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 silabs.com | Building a more connected world. Rev. 1.01 | 2 Si8239x Data Sheet Ordering Guide 1. Ordering Guide Table 1.1. Si8239x Ordering Guide Ordering Part Number Configuration Output UVLO Enhanced UVLO UVLO Status Pin Delayed Startup Time Dead-Time Setting Deglitch Package Type Isolation Rating Si82390AD-IS Dual, VIA, VIB 6V Yes Yes Yes N/A No SOIC-16 WB 5 kVrms Si82390BD-IS Dual, VIA, VIB 8V Yes Yes Yes N/A No SOIC-16 WB 5 kVrms Si82390CD-IS Dual, VIA, VIB 12 V Yes Yes Yes N/A No SOIC-16 WB 5 kVrms Si82395AD-IS Dual, VIA, VIB 6V No Yes Yes N/A No SOIC-16 WB 5 kVrms Si82395BD-IS Dual, VIA, VIB 8V No Yes Yes N/A No SOIC-16 WB 5 kVrms Si82395CD-IS Dual, VIA, VIB 12 V No Yes Yes N/A No SOIC-16 WB 5 kVrms Si82397AD-IS Dual, VIA, VIB 6V No No Yes N/A No SOIC-16 WB 5 kVrms Si82397BD-IS Dual, VIA, VIB 8V No No Yes N/A No SOIC-16 WB 5 kVrms Si82397CD-IS Dual, VIA, VIB 12 V No No Yes N/A No SOIC-16 WB 5 kVrms Si82391AD-IS Dual, VIA, VIB 6V Yes Yes No N/A No SOIC-16 WB 5 kVrms Si82391BD-IS Dual, VIA, VIB 8V Yes Yes No N/A No SOIC-16 WB 5 kVrms Si82391CD-IS Dual, VIA, VIB 12 V Yes Yes No N/A No SOIC-16 WB 5 kVrms Si82393CD-IS HS/LS, VIA/VIB 12 V Yes Yes No N/A Yes SOIC-16 WB 5 kVrms Si82396AD-IS Dual, VIA, VIB 6V No Yes No N/A No SOIC-16 WB 5 kVrms Si82396BD-IS Dual, VIA, VIB 8V No Yes No N/A No SOIC-16 WB 5 kVrms Si82396CD-IS Dual, VIA, VIB 12 V No Yes No N/A No SOIC-16 WB 5 kVrms Si82394AD-IS HS/LS, PWM 6V No Yes Yes 10-200 ns No SOIC-16 WB 5 kVrms Si82394BD-IS HS/LS, PWM 8V No Yes Yes 10-200 ns No SOIC-16 WB 5 kVrms Si82394CD-IS HS/LS, PWM 12 V No Yes Yes 10-200 ns No SOIC-16 WB 5 kVrms Si82398AD-IS HS/LS, PWM 6V No Yes No 10-200 ns No SOIC-16 WB 5 kVrms Si82398BD-IS HS/LS, PWM 8V No Yes No 10-200 ns No SOIC-16 WB 5 kVrms Si82398CD-IS HS/LS, PWM 12 V No Yes No 10-200 ns No SOIC-16 WB 5 kVrms Si82390AB-IS1 Dual, VIA, VIB 6V Yes Yes Yes N/A No SOIC-16 NB 2.5 kVrms Si82390BB-IS1 Dual, VIA, VIB 8V Yes Yes Yes N/A No SOIC-16 NB 2.5 kVrms Si82390CB-IS1 Dual, VIA, VIB 12 V Yes Yes Yes N/A No SOIC-16 NB 2.5 kVrms Si82392BB-IS1 HS/LS, VIA/VIB 8V No Yes No N/A No SOIC-16 NB 2.5 kVrms Si82395AB-IS1 Dual, VIA, VIB 6V No Yes Yes N/A No SOIC-16 NB 2.5 kVrms Si82395BB-IS1 Dual, VIA, VIB 8V No Yes Yes N/A No SOIC-16 NB 2.5 kVrms silabs.com | Building a more connected world. Rev. 1.01 | 3 Si8239x Data Sheet Ordering Guide Ordering Part Number Configuration Output UVLO Enhanced UVLO UVLO Status Pin Delayed Startup Time Dead-Time Setting Deglitch Package Type Isolation Rating Si82395CB-IS1 Dual, VIA, VIB 12 V No Yes Yes N/A No SOIC-16 NB 2.5 kVrms Si82394AB4-IS1 HS/LS, PWM 6V No Yes Yes 40-600 ns Yes SOIC-16 NB 2.5 kVrms Si82394BB4-IS1 HS/LS, PWM 8V No Yes Yes 40-600 ns Yes SOIC-16 NB 2.5 kVrms Si82394CB4-IS1 HS/LS, PWM 12 V No Yes Yes 40-600 ns Yes SOIC-16 NB 2.5 kVrms Si82394AD4-IS HS/LS, PWM 6V No Yes Yes 40-600 ns Yes SOIC-16 WB 5 kVrms Si82394BD4-IS HS/LS, PWM 8V No Yes Yes 40-600 ns Yes SOIC-16 WB 5 kVrms Si82394CD4-IS HS/LS, PWM 12 V No Yes Yes 40-600 ns Yes SOIC-16 WB 5 kVrms Si82391AB-IS1 Dual, VIA, VIB 6V Yes Yes No N/A No SOIC-16 NB 2.5 kVrms Si82391BB-IS1 Dual, VIA, VIB 8V Yes Yes No N/A No SOIC-16 NB 2.5 kVrms Si82391CB-IS1 Dual, VIA, VIB 12 V Yes Yes No N/A No SOIC-16 NB 2.5 kVrms Si82396AB-IS1 Dual, VIA, VIB 6V No Yes No N/A No SOIC-16 NB 2.5 kVrms Si82396BB-IS1 Dual, VIA, VIB 8V No Yes No N/A No SOIC-16 NB 2.5 kVrms Si82396CB-IS1 Dual, VIA, VIB 12 V No Yes No N/A No SOIC-16 NB 2.5 kVrms Si82398AB4-IS1 HS/LS, PWM 6V No Yes No 40-600 ns Yes SOIC-16 NB 2.5 kVrms Si82398BB4-IS1 HS/LS, PWM 8V No Yes No 40-600 ns Yes SOIC-16 NB 2.5 kVrms Si82398CB4-IS1 HS/LS, PWM 12 V No Yes No 40-600 ns Yes SOIC-16 NB 2.5 kVrms Si82398AD4-IS HS/LS, PWM 6V No Yes No 40-600 ns Yes SOIC-16 WB 5 kVrms Si82398BD4-IS HS/LS, PWM 8V No Yes No 40-600 ns Yes SOIC-16 WB 5 kVrms Si82398CD4-IS HS/LS, PWM 12 V No Yes No 40-600 ns Yes SOIC-16 WB 5 kVrms Note: 1. All products are rated at 4 A output drive current max, VDDI = 2.5 V - 5.5 V, EN (active high). 2. All packages are RoHS-compliant with peak reflow temperatures of 260 C according to the JEDEC industry standard classifications and peak solder temperatures. 3. "Si" and "SI" are used interchangeably. 4. An "R" at the end of the part number denotes tape and reel packaging option. silabs.com | Building a more connected world. Rev. 1.01 | 4 Si8239x Data Sheet Ordering Guide Automotive Grade OPNs Automotive-grade devices are built using automotive-specific flows at all steps in the manufacturing process to ensure robustness and low defectivity. These devices are supported with AIAG-compliant Production Part Approval Process (PPAP) documentation and feature International Material Data System (IMDS) and China Automotive Material Data System (CAMDS) listings. Qualifications are compliant with AEC-Q100, and a zero-defect methodology is maintained throughout definition, design, evaluation, qualification, and mass production steps. Table 1.2. Ordering Guide for Automotive Grade OPNs5, 6, 7 Ordering Part Number Configuration Output UVLO Enhanced UVLO UVLO Status Pin Delayed Startup Time Dead-Time Setting Deglitch Package Type Isolation Rating Si82394AD-AS HS/LS, PWM 6V No Yes Yes 10-200 ns No SOIC-16 WB 5 kVrms Si82394AD4-AS HS/LS, PWM 6V No Yes Yes 40-600 ns Yes SOIC-16 WB 5 kVrms Si82396CB-AS1 Dual, VIA, VIB 12 V No Yes No N/A No SOIC-16 NB 2.5 kVrms Note: 1. All products are rated at 4 A output drive current max, VDDI = 2.5 V - 5.5 V, EN (active high). 2. All packages are RoHS-compliant with peak reflow temperatures of 260 C according to the JEDEC industry standard classifications and peak solder temperatures. 3. "Si" and "SI" are used interchangeably. 4. An "R" at the end of the part number denotes tape and reel packaging option. 5. Automotive-Grade devices (with an "-A" suffix) are identical in construction materials, topside marking, and electrical parameters to their Industrial-Grade (with a "-I" suffix) version counterparts. Automotive-Grade products are produced utilizing full automotive process flows and additional statistical process controls throughout the manufacturing flow. The Automotive-Grade part number is included on shipping labels. 6. Referring to Section 11 "Top Markings", the Manufacturing Code represented by either "RTTTTT" or "TTTTTT" contains as its first character a letter in the range N through Z to indicate Automotive-Grade. 7. Additional Ordering Part Numbers may be available in Automotive-Grade. Please contact your local Silicon Labs sales representative for further information. silabs.com | Building a more connected world. Rev. 1.01 | 5 Si8239x Data Sheet System Overview 2. System Overview The operation of an Si8239x channel is analogous to that of an optocoupler and gate driver, except an RF carrier is modulated instead of light. This simple architecture provides a robust isolated data path and requires no special considerations or initialization at start-up. A simplified block diagram for a single Si8239x channel is shown in the following figure. Figure 2.1. Simplified Channel Diagram A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier. Referring to the Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The Receiver contains a demodulator that decodes the input state according to its RF energy content and applies the result to output B via the output driver. This RF on/off keying scheme is superior to pulse code schemes as it provides best-in-class noise immunity, low power consumption, and better immunity to magnetic fields. See the following figure for more details. Figure 2.2. Modulation Scheme silabs.com | Building a more connected world. Rev. 1.01 | 6 Si8239x Data Sheet System Overview 2.1 Typical Performance Characteristics The typical performance characteristics depicted in the following figures are for information purposes only. Refer to the Electrical Characteristics table for actual specification limits. Figure 2.3. Rise/Fall Time vs. Supply Voltage Figure 2.4. Propagation Delay vs. Supply Voltage Figure 2.5. Rise/Fall Time vs. Load Figure 2.6. Propagation Delay vs. Load Figure 2.7. Propagation Delay vs. Temperature Figure 2.8. Supply Current vs. Supply Voltage Figure 2.9. Supply Current vs. Supply Voltage silabs.com | Building a more connected world. Figure 2.10. Supply Current vs. Temperature Rev. 1.01 | 7 Si8239x Data Sheet System Overview Figure 2.11. Output Sink Current vs. Supply Voltage Figure 2.13. Output Sink Current vs. Temperature Figure 2.12. Output Source Current vs. Supply Voltage Figure 2.14. Output Source Current vs. Temperature 2.2 Family Overview and Logic Operation During Startup The Si8239x family of isolated drivers consists of high-side/low-side and dual driver configurations. silabs.com | Building a more connected world. Rev. 1.01 | 8 Si8239x Data Sheet System Overview 2.2.1 Device Behavior The following are truth tables for the Si8239x families. Table 2.1. Si82390/1/3 Drivers Enhanced UVLO and Status VIA VIB EN1 VDDI VDDA VDDB VOA VOB RDY Notes H L H P2 P P H L H L H H P P P L H H H H H P P P H / L4 H / L4 H L L H P P P L L H X X L/NC P P P L L H X X X UP2 P P L L UD3 Fail-safe output when VDDI unpowered X X H P P UP L UD L X X H P UP P UD L L VOA, VOB are actively driven low if either VDDA or VDDB is UP Device disabled Note: 1. The EN pin needs to be pulled down with a 100 k resistor externally to GND. 2. The chip can be powered through the VIA,VIB input ESD diodes even if VDDI is unpowered. It is recommended that inputs be left unpowered when VDDI is unpowered. The EN pin has a special ESD circuit that prevents the IC from powering up through the EN pin. 3. UD = undetermined if same side power is UP. 4. VOA = VOB = L for Si82393 only Table 2.2. Si82392/5/6 Drivers with UVLO Status VIA VIB EN1 VDDI VDDA VDDB VOA VOB RDY H L H P P P H L H L H H P P P L H H H H H P P P H / L4 H / L4 H L L H P P P L L H X X L/NC P P P L L H X X X UP2 P P L L UD3 H X H P P UP H UD L L X H P P UP L UD L X H H P UP P UD H L X L H P UP P UD L L silabs.com | Building a more connected world. Notes Device disabled Fail-safe output when VDDI unpowered VOA depends on VDDA state VOB depends on VDDB state Rev. 1.01 | 9 Si8239x Data Sheet System Overview VIA VIB VDDI EN1 VDDA VDDB VOA VOB RDY Notes Note: 1. The EN pin needs to be pulled down with a 100 k resistor externally to GND. 2. The chip can be powered through the VIA,VIB input ESD diodes even if VDDI is unpowered. It is recommended that inputs be left unpowered when VDDI is unpowered. The EN pin has a special ESD circuit that prevents the IC from powering up through the EN pin. 3. UD = undetermined if same side power is UP. 4. VOA = VOB = L for Si82392 only Table 2.3. Si82397 Dual Drivers with No UVLO Status VIA VIB EN1 VDDI VDDA VDDB VOA VOB Notes H L H P P P H L L H H P P P L H H H H P P P H H L L H P P P L L X X L/NC P P P L L Device disabled X X X UP2 P P L L Fail-safe output when VDDI is unpowered H X H P P UP H UD3 L X H P P UP L UD X H H P UP P UD H X L H P UP P UD L VOA depends on VDDA state VOB depends on VDDB state Note: 1. The EN pin needs to be pulled down with a 100 k resistor externally to GND. 2. The chip can be powered through the VIA,VIB input ESD diodes even if VDDI is unpowered. It is recommended that inputs be left unpowered when VDDI is unpowered. The EN pin has a special ESD circuit that prevents the IC from powering up through the EN pin. 3. UD = undetermined if same side power is UP. Table 2.4. Si82394/8 PWM Input HS/LS Drivers with UVLO Status PWM EN1 VDDI VDDA VDDB VOA VOB RDY Notes H H P P P H L H See Dead-time note and Figure 2.18 Dead Time Waveforms for HighSide/Low-Side Drivers on page 17 for timing L H P P P L H H X L/NC P P P L L H X X UP2 P P L L UD3 H H P P UP H UD L L H P P UP L UD L silabs.com | Building a more connected world. Device disabled Fail-safe output when VDDI unpowered VOA depends on VDDA state Rev. 1.01 | 10 Si8239x Data Sheet System Overview PWM EN1 VDDI VDDA VDDB VOA VOB RDY H H P UP P UD L L L H P UP P UD H L Notes VOB depends on VDDB state Note: 1. The EN pin needs to be pulled down with a 100 k resistor externally to GND. 2. The chip can be powered through the PWM input ESD diodes even if VDDI is unpowered. It is recommended that inputs be left unpowered when VDDI is unpowered. The EN pin has a special ESD circuit that prevents the IC from powering up through the EN pin. 3. UD = undetermined if same side power is UP. 2.3 Power Supply Connections Isolation requirements mandate separating VDDI from the driver supplies. The decoupling caps for these supplies must be placed as close to the VDD and GND pins of the Si8239x as possible. The optimum values for these capacitors are 1 F and 0.1 F for VDDI and 10 F and 0.1 F for each driver supply. Low effective series resistance (ESR) capacitors, such as Tantalum, are recommended. silabs.com | Building a more connected world. Rev. 1.01 | 11 Si8239x Data Sheet System Overview 2.4 Power Dissipation Considerations Proper system design must assure that the Si8239x operates within safe thermal limits across the entire load range. The Si8239x total power dissipation is the sum of the power dissipated by bias supply current, internal parasitic switching losses, and power dissipated by the series gate resistor and load. Equation 1 shows Si8239x power dissipation. ( ) ( ) Rp Rn 2 2 2 + f * C L * V DD2 + 2 * f * Cint * V DD2 * * P D = V DDI * I DDI + 2 * V DD2 * I DD2 + f * C L * V DD2 R p + Rg Rn + Rg Equation 1. Note: Where: * PD is the total Si8239x device power dissipation (W) * IDDI is the input side maximum bias current (from table 4.1, 3.8 mA) * IDD2 is the driver side maximum bias current (from table 4.1, 6.5 mA) * Cint is the internal parasitic capacitance (370 pf) * VDDI is the input side VDD supply voltage (2.5 V to 5. 5V) * VDD2 is the driver side supply voltage (10 V to 24 V) * f is the switching frequency (Hz) * CL is the load capacitance (F) * RG is the external gate resistor () * RP is the RDS(ON) of the driver pull-up device (2.7 ) * Rn is the RDS(ON) of the driver pull-down device (1 ) Example calculation (using IDDx values from Table 4.1 for Si82397) VDDI = 5 V VDD2 = 12 V f = 350 kHz RG = 22 CL = 2 nF ( ) P D = 5 * .0021 + 2 * 12 * .0025 + 350000 * 2 * 10-9 * 144 * ( 2.72.7+ 22 ) + 350000 * (2 * 10-9) * 144 * ( 1 +122 ) + 2 * 350000 * (370 * 10-12) * 144 PD = 0.123 W is the total dissipated power by the Si8239x package. From this, the driver junction temperature can be calculated using Equation 2. T j = T A + P D * ja Equation 2. Note: Where: * Tj is the junction temperature (C) * TA is the ambient temperature (C) * PD is the power dissipated in the package (W) * ja is the thermal resistance of the package (100 C/W from table 4.7) For this example, assume that TA is 25 C. T j = 25 + 0.123 * 100 silabs.com | Building a more connected world. Rev. 1.01 | 12 Si8239x Data Sheet System Overview Tj is 37.3 C. Equation 2 can be rearranged to determine the maximum package power dissipation for a given ambient temperature. P Dmax = ( T jmax - T A ja ) Note: Where: * PDmax is the maximum allowed power dissipation (W) * Tjmax is the maximum allowed junction temperature (150 C from table 4.8) * TA is the ambient temperature (25 C in this example) * ja is the thermal resistance of the package (100 C/W from table 4.7) PDmax = 1.25 W Substituting values used in this example back into Equation 1, establishes a relationship between the maximum capacitive load and switching frequency. The following figure shows the relationship between the capacitive load and the switching frequency for four different driver supply voltages. In the figure, the points along the load line represent the package dissipation-limited value of CL as a function of switching frequency. Figure 2.15. Max Load vs. Switching Frequency 2.5 Layout Considerations It is most important to minimize ringing in the drive path and noise on the Si8239x VDD lines. Care must be taken to minimize parasitic inductance in these paths by locating the Si8239x as close to the device it is driving as possible. In addition, the VDD supply and ground trace paths must be kept short. For this reason, the use of power and ground planes is highly recommended. A split ground plane system having separate ground and VDD planes for power devices and small signal components provides the best overall noise performance. 2.6 Undervoltage Lockout Operation Device behavior during start-up, normal operation and shutdown is shown in Figure 2.16 Si82391/2/3/6/8 Device Behavior during Normal Operation and Shutdown on page 15, where UVLO+ and UVLO- are the positive-going and negative-going thresholds respectively. Note that outputs VOA and VOB default low when input side power supply (VDDI) is not present. silabs.com | Building a more connected world. Rev. 1.01 | 13 Si8239x Data Sheet System Overview 2.6.1 Device Startup Outputs VOA and VOB are held low during power-up until VDD is above the UVLO threshold for time period tSTART. Following this, the outputs follow the states of inputs VIA and VIB. silabs.com | Building a more connected world. Rev. 1.01 | 14 Si8239x Data Sheet System Overview 2.6.2 Undervoltage Lockout Undervoltage Lockout (UVLO) is provided to prevent erroneous operation during device startup and shutdown or when VDD is below its specified operating circuits range. The input (control) side, Driver A and Driver B, each have their own undervoltage lockout monitors. The Si8239x input side enters UVLO when VDDI < VDDIUV-, and exits UVLO when VDDI > VDDIUV+. The driver outputs, VOA and VOB, remain low when the input side of the Si8239x is in UVLO and their respective VDD supply (VDDA, VDDB) is within tolerance. Each driver output can enter or exit UVLO independently for the Si82394/5/6/7/8 products. For example, VOA unconditionally enters UVLO when VDDA falls below VDDAUV- and exits UVLO when VDDA rises above VDDAUV+. For the Si82390/1/3 products, when either VDDA or VDDB falls under VDDxUV-, this information is fed back through the isolation barrier to the input side logic which forces VOB or VOA to be driven low respectively under these conditions. If the application is driving a transformer for an isolated power converter, for example, this behavior is useful to prevent flux imbalances in the transformer. Please note that this feature implies that it can only be implemented when the VDDA and VDDB power supplies are independent from each other. If a bootstrap circuit is used for Si82390/1/3, it will prevent the IC from powering up. Do not use the Si82390/1/3 in conjunction with a bootstrap circuit for driver power. Figure 2.16. Si82391/2/3/6/8 Device Behavior during Normal Operation and Shutdown silabs.com | Building a more connected world. Rev. 1.01 | 15 Si8239x Data Sheet System Overview Figure 2.17. Si82390/4/5/7 Device Behavior during Normal Operation and Shutdown 2.6.3 Control Inputs VIA, VIB, and PWM inputs are high-true, TTL level-compatible logic inputs. A logic high signal on VIA or VIB causes the corresponding output to go high. For PWM input versions (Si82394/8), VOA is high and VOB is low when the PWM input is high, and VOA is low and VOB is high when the PWM input is low. 2.6.4 Enable Input When brought low, the EN input unconditionally drives VOA and VOB low regardless of the states of VIA and VIB. Device operation terminates within tSD after EN = VIL and resumes within tRESTART after EN = VIH. The EN input has no effect if VDDI is below its UVLO level (i.e., VOA, VOB remain low). The EN pin should be connected to GNDI through a 100 k pull-down resistor. 2.6.5 Delayed Startup Time Product options Si82390/4/5/7 have a safe startup time (tSTARTUP_SAFE) of 1ms typical from input power valid to output showing valid data. This feature allows users to proceed through a safe initialization sequence with a monotonic output behavior. 2.6.6 RDY Pin This is a digital output pin available on all options except the Si82397. The RDY pin is "H" if all the UVLO circuits monitoring VDDI, VDDA, and VDDB are above UVLO threshold. It indicates that device is ready for operation. An "L" status indicates that one of the power supplies (VDDI, VDDA, or VDDB) is in an unpowered state. silabs.com | Building a more connected world. Rev. 1.01 | 16 Si8239x Data Sheet System Overview 2.7 Programmable Dead Time and Overlap Protection All high-side/low-side drivers (Si82394/8) include programmable dead time, which adds a user-programmable delay between transitions of VOA and VOB. When enabled, dead time is present on all transitions. The amount of dead time delay (DT) is programmed by a single resistor (RDT) connected from the DT input to ground per the equation below. Note that the dead time pin should be connected to GND1 through a resistor between the values of 6 k and 100 k and a filter capacitor of 100 pF in parallel as shown in Figure 3.1 Si82394/8 Application Diagram on page 18. It is highly recommended it not be tied to VDDI. See Figure 2.18 Dead Time Waveforms for High-Side/Low-Side Drivers on page 17 below. Figure 2.18. Dead Time Waveforms for High-Side/Low-Side Drivers 2.8 De-glitch Feature A de-glitch feature is provided on some options, as defined in the Ordering Guide. The de-glitch basically provides an internal time delay during which any noise is ignored and will not pass through the IC. It is about 30 ns; so, for these product options, the prop delay will be extended by 30 ns. silabs.com | Building a more connected world. Rev. 1.01 | 17 Si8239x Data Sheet Applications 3. Applications The following examples illustrate typical circuit configurations using the Si8239x. 3.1 High-Side/Low-Side Driver The following figure shows the Si82394/8 controlled by a single PWM signal. Figure 3.1. Si82394/8 Application Diagram In the above figure, D1 and CB form a conventional bootstrap circuit that allows VOA to operate as a high-side driver for Q1, which has a maximum drain voltage of 1500 V. VOB is connected as a conventional low-side driver. Note that the input side of the Si8239x requires VDDI in the range of 2.5 to 5.5 V, while the VDDA and VDDB output side supplies must be between 6.5 and 24 V with respect to their respective grounds. The boot-strap start up time will depend on the CB cap chosen. Also note that the bypass capacitors on the Si8239x should be located as close to the chip as possible. silabs.com | Building a more connected world. Rev. 1.01 | 18 Si8239x Data Sheet Applications 3.2 Dual Driver The following figure shows the Si82390/1/5/6/7 configured as a dual driver. Note that the drain voltages of Q1 and Q2 can be referenced to a common ground or to different grounds with as much as 1500 Vdc between them. VDDB D1 C3 1 F VDDI VDDI C2 0.1 F C1 1 F VDDA CB GNDI OUT 1 VIA OUT 2 VIB 1500 V max Q1 VOA GNDA Si82392/5/6/7 CONTROLLER VDDB VDDB C4 0.1 F EN I/O RPD I/O C5 10 F GNDB RDY (Not present on Si82397) Q2 VOB Figure 3.2. Si82392/5/6/7 Application Diagram VDDI VDDI C1 1 F Q1 C2 0.1 F VOA GNDI OUT 1 VIA OUT 2 VIB VDDA VDDA C3 0.1 F C4 10 F Si82390/1/3 CONTROLLER VDDB VDDB RPD I/O C5 0.1 F EN I/O C6 10 F GNDB RDY VOB Q2 Figure 3.3. Si82390/1/3 with Enhanced UVLO Feature Application Diagram Because each output driver resides on its own die, the relative voltage polarities of VOA and VOB can reverse without damaging the driver. A dual driver can operate as a dual low-side or dual high-side driver and is unaffected by static or dynamic voltage polarity changes. The Si82390/1/3 come equipped with an enhanced UVLO feature as described in 2.6.2 Undervoltage Lockout. This feature is intended for systems which provide VDDA and VDDB as independent isolated power supplies. Si82390/1/3 are not recommended for use with bootstrap configuration for driver supply since the driver output will not be asserted unless both VDDA and VDDB are above the UVLO threshold. silabs.com | Building a more connected world. Rev. 1.01 | 19 Si8239x Data Sheet Electrical Characteristics 4. Electrical Characteristics Table 4.1. Electrical Characteristics1,2 Parameter Symbol Test Condition Min Typ Max Unit 2.5 3.3 5.5 V DC Specifications Input-side Power Supply Voltage Driver Supply Voltage Input Supply Quiescent Current EN = 0 Output Supply Quiescent Current, per channel EN = 0 Input Supply Active Current Output Supply Active Current, per channel Input Pin Leakage Current, VIA, VIB, PWM Input Pin Leakage Current, EN VDDI VDDA, VDDB Voltage between VDDA and GNDA, and VDDB and GNDB 6.5 -- 24 V IDDI(Q) Si82390/1/2/3/4/5/6/8 -- 2.8 3.8 mA Si82397 -- 1.5 2.1 mA Si82390/1/2/3/4/5/6/8 -- 4.2 6.5 mA Si82397 -- 1.5 2.5 mA Si82390/1/2/3/5/6 VIA, VIB freq = 1 MHz -- 5.0 7.2 mA Si82394/8: PWM freq = 1 MHz -- 5.2 7.3 Si82397: VIA, VIB freq = 1 MHz -- 3.7 5.6 Si82390/1/2/3/4/5/6/8: Input freq = 1 MHz, no load -- 7.1 16.0 Si82397: Input freq = 1 MHz, no load -- 4.4 12.4 IVIA, IVIB, IPWM -10 -- +10 A IENABLE -10 -- +10 A IDDA(Q), IDDB(Q) IDDI IDDA/B mA Logic High Input Threshold VIH TTL Levels 2.0 -- -- V Logic Low Input Threshold VIL TTL Levels -- -- 0.8 V 400 450 -- mV Input Hysteresis VIHYST Logic High Output Voltage VOAH, VOBH IOA, IOB = -1 mA VDDA, VDDB - 0.04 -- -- V Logic Low Output Voltage VOAL, VOBL IOA, IOB = 1 mA -- -- 0.04 V Output Short-Circuit Pulsed Source Current IOA(SCL), IOB(SCL) See Figure 4.1 IOL Sink Current Test on page 23 -- 4.0 -- A Output Short-Circuit Pulsed Source Current IOA(SCH), IOB(SCH) See Figure 4.2 IOH Source Current Test on page 23 -- 2.0 -- A Output Sink Resistance RON(SINK) -- 1.0 -- RON(SOURCE) -- 2.7 -- Output Source Resistance VDDI Undervoltage Threshold VDDIUV+ VDDI rising 2.15 2.3 2.5 V VDDI Undervoltage Threshold VDDIUV- VDDI falling 2.1 2.2 2.4 V silabs.com | Building a more connected world. Rev. 1.01 | 20 Si8239x Data Sheet Electrical Characteristics Parameter Symbol VDDI Lockout Hysteresis VDDIHYS VDDA, VDDB Undervoltage Threshold VDDAUV+, VDDBUV+ Test Condition Min Typ Max Unit 80 100 -- mV VDDA, VDDB rising V 6V 5.0 6.0 7.0 8V 7.2 8.6 10.0 12 V 9.2 11.1 12.8 VDDA, VDDB Undervoltage Threshold VDDAUV-, VDDBUV- VDDA, VDDB falling V 6V 4.7 5.8 6.7 8V 6.6 8.0 9.3 12 V 8.7 10.1 11.6 UVLO = 6 V 200 280 -- UVLO = 8 V 450 600 -- UVLO = 12 V 600 1000 -- VDDAUV- to VOB low -- 120 -- ns -- 10 -- ns -- 92 -- ns -- 30 -- ns VDDA, VDDB Lockout Hysteresis VDDAHYS, VDDBHYS mV AC Specifications UVLO Fault Shutdown Time Enhanced Mode VDDBUV- to VOA low Si82390/1/3 only UVLO Fault Shutdown Time VDDAUV- to VOA low VDDBUV- to VOB low UVLO fault to RDY t_FLT Minimum Pulse Width Propagation Delay tpHL, tpLH Si82390/1/2/3/5/6/7 (with no de-glitch) 20 30 40 ns VDDA/B = 12 V tpHL Si82394/8 (with no de-glitch) 20 30 40 ns CL = 0 pF tpLH Si82394/8 (with no de-glitch; measured with 6 k RDT resistor; includes minimum dead time) 35 45 55 ns tpHL Si82394xx4/8xx4 (have deglitch) 60 77 95 ns tpLH Si82394xx4/8xx4 (have deglitch and measured with 6 k RDT resistor; includes minimum dead time and deglitch delay) 99 116 135 ns PWD VDDA/B = 12 V -- 2.7 5.60 ns RDT = 6 k 27 38 57 ns RDT = 15 k 70 90 130 RDT = 100 k 450 590 750 Pulse Width Distortion |tPLH - tPHL| CL = 0 pF Programmed Dead Time for product options with 40-600 ns dead time setting range silabs.com | Building a more connected world. DT Rev. 1.01 | 21 Si8239x Data Sheet Electrical Characteristics Parameter Symbol Test Condition Min Typ Max Unit Output Rise and Fall Time tR,tF CL = 200 pF -- -- 12 ns Shutdown Time from Enable False tSD All options with no de-glitch -- -- 60 ns All options with de-glitch -- -- 113 All options with no de-glitch -- -- 60 All options with de-glitch -- -- 95 Time from VDDI_ = VDDI_UV+ to VOA, VOB = VIA, VIB -- Restart Time from Enable True tRESTART Device Start-up Time Input Si82390/4/5/7 Si82391/2/3/6/8 Device Start-up Time -- tSTART_SAFE 1 ms tSTART 40 s tSTART_OUT Time from VDDA/B = VDDA/ B_UV+ to VOA, VOB = VIA, VIB -- 60 -- s CMTI VIA, VIB, PWM = VDDI or 0 V 35 100 -- kV/s Output Common Mode Transient Immunity ns VCM = 1500 V Note: 1. 2.5 V < VDDI < 5.5 V; 6.5 V < VDDA, VDDB < 24 V; TA = -40 to +125 C. 2. Typical specs at 25 C, VDDA = VDDB = 12 V for 5 V and 8 V UVLO devices, otherwise 15 V. silabs.com | Building a more connected world. Rev. 1.01 | 22 Si8239x Data Sheet Electrical Characteristics The following figures depict sink current, source current, and common-mode transient immunity test circuits, respectively. Figure 4.1. IOL Sink Current Test Figure 4.2. IOH Source Current Test silabs.com | Building a more connected world. Rev. 1.01 | 23 Si8239x Data Sheet Electrical Characteristics Figure 4.3. CMTI Test Circuit Table 4.2. Regulatory Information1,2,3 CSA The Si8239x is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873. 60950-1: Up to 600 VRMS reinforced insulation working voltage; up to 1000 VRMS basic insulation working voltage. VDE The Si8239x is certified according to VDE 0884-10. For more details, see File 5006301-4880-0001. VDE 0884-10: Up to 891 Vpeak for basic insulation working voltage. 60950-1: Up to 600 VRMS reinforced insulation working voltage; up to 1000 VRMS basic insulation working voltage. UL The Si8239x is certified under UL1577 component recognition program. For more details, see File E257455. Rated up to 5000 VRMS isolation voltage for basic protection. CQC The Si8239x is certified under GB4943.1-2011. For more details, see certificates CQCxxx (TBD). Rated up to 600 VRMS reinforced insulation working voltage; up to 1000 VRMS basic insulation working voltage. Note: 1. Regulatory Certifications apply to 2.5 kVRMS rated devices which are production tested to 3.0 kVRMS for 1 sec. 2. Regulatory Certifications apply to 5.0 kVRMS rated devices which are production tested to 6.0 kVRMS for 1 sec. 3. For more information, see Ordering Guide. silabs.com | Building a more connected world. Rev. 1.01 | 24 Si8239x Data Sheet Electrical Characteristics Table 4.3. Insulation and Safety-Related Specifications Parameter Symbol Test Condition Value Unit WBSOIC-16 NBSOIC-16 Nominal Air Gap (Clearance)1 L(1O1) 8.0 4.01 mm Nominal External Tracking (Creepage) L(1O2) 8.0 4.01 mm 0.014 0.014 mm 600 600 V Minimum Internal Gap (Internal Clearance) Tracking Resistance (Proof Tracking Index) PTI Erosion Depth ED 0.019 0.019 mm Resistance (InputOutput)2 RIO 1012 1012 Capacitance (InputOutput)2 CIO 1.4 1.4 pF Input Capacitance3 CI 4.0 4.0 pF IEC60112 f = 1 MHz Note: 1. The values in this table correspond to the nominal creepage and clearance values as detailed in 7. Package Outline: 16-Pin Wide Body SOIC and 9. Package Outline: 16-Pin Narrow Body SOIC. VDE certifies the clearance and creepage limits as 4.7 mm minimum for the NB SOIC-16 and 8.5 mm minimum for the WB SOIC-16 package. UL does not impose a clearance and creepage minimum for component level certifications. CSA certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC16 and 7.6 mm minimum for the WB SOIC-16 package. 2. To determine resistance and capacitance, the Si8239x is converted into a 2-terminal device. Pins 1-8 are shorted together to form the first terminal,and pins 9-16 are shorted together to form the second terminal. The parameters are then measured between these two terminals. 3. Measured from input pin to ground. Table 4.4. IEC 60664-1 (VDE 0884) Ratings Parameter Basic Isolation Group Installation Classification silabs.com | Building a more connected world. Test Condition Specification WB SOIC-16 NB SOIC-16 Material Group I I Rated Mains Voltages < 150 VRMS I-IV I-IV Rated Mains Voltages < 300 VRMS I-IV I-III Rated Mains Voltages < 400 VRMS I-III I-II Rated Mains Voltages < 600 VRMS I-III I-II Rev. 1.01 | 25 Si8239x Data Sheet Electrical Characteristics Table 4.5. IEC 60747-5-5 Insulation Characteristics Parameter Symbol Test Condition Characteristic Unit WB SOIC-16 NB SOIC-16 891 560 V peak Maximum Working Insulation Voltage VIORM Input to Output Test Voltage VPR Method b1 (VIORM x 1.875 = VPR, 100% Production Test, tm = 1 sec, Partial Discharge < 5 pC) 1671 1050 V peak Transient Overvoltage VIOTM t = 60 sec 6000 4000 V peak 2 2 >109 >109 Pollution Degree (DIN VDE 0110, See Table 4.1 Electrical Characteristics1,2 on page 20) Insulation Resistance at TS, VIO = 500 V RS Note: 1. Maintenance of the safety data is ensured by protective circuits. The Si8239x provides a climate classification of 40/125/21. Table 4.6. IEC Safety Limiting Values1 Parameter Symbol Safety Temperature TS Safety Input Current IS Test Condition JA = 100 C/W (WB SOIC-16), 105 C/W (NB SOIC-16) WB SOIC-16 NB SOIC-16 Unit 150 150 C 50 50 mA 1.2 1.2 W VDDI = 5.5 V, VDDA = VDDB = 24 V, TJ = 150 C, TA = 25 C Device Power Dissipation2 PD Note: 1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figure 4.4 WB SOIC-16, NB SOIC-16 Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per VDE 0884-10 on page 28. 2. The Si8239x is tested with VDDI = 5.5 V, VDDA = VDDB = 24 V, TJ = 150 C, CL = 100 pF, input 2 MHz 50% duty cycle square wave. silabs.com | Building a more connected world. Rev. 1.01 | 26 Si8239x Data Sheet Electrical Characteristics Table 4.7. Thermal Characteristics Parameter Symbol Min Typ Max Unit IC Junction-to-Air Thermal JA --- 100 --- C/W JA --- 105 --- C/W Tj --- --- 150 C Resistance (WB SOIC-16) IC Junction-to-Air Thermal Resistance (NB SOIC-16) Junction Temperature Table 4.8. Absolute Maximum Ratings1 Parameter Symbol Min Max Unit Ambient Temperature under Bias TA -40 +125 C Storage Temperature TSTG -65 +150 C Junction Temperature TJ -- +150 C Input-side Supply Voltage VDDI -0.6 6.0 V Driver-side Supply Voltage VDDA, VDDB -0.6 30 V Voltage on any Pin with respect to Ground VIO -0.5 VDD + 0.5 V Peak Output Current (tPW = 10 s, duty cycle = 0.2%) IOPK -- 4.0 A -- 260 C HBM -- 4 kV CDM -- 2 kV Maximum Isolation (Input to Output) (1 s) WB SOIC-16 -- 6500 VRMS Maximum Isolation (Output to Output) (1 s) WB SOIC-16 -- 2500 VRMS Maximum Isolation (Input to Output) (1 s) NB SOIC-16 -- 4500 VRMS Maximum Isolation (Output to Output) (1 s) NB SOIC-16 -- 2500 VRMS Lead Solder Temperature (10 s) ESD per AEC-Q100 Note: 1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. silabs.com | Building a more connected world. Rev. 1.01 | 27 Si8239x Data Sheet Electrical Characteristics Figure 4.4. WB SOIC-16, NB SOIC-16 Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per VDE 0884-10 silabs.com | Building a more connected world. Rev. 1.01 | 28 Si8239x Data Sheet Top-Level Block Diagrams 5. Top-Level Block Diagrams ISOLATION VDDA VIA VOA UVLO GNDA VDDI VDDI UVLO EN ISOLATION VDDB VOB UVLO GNDB VIB RDY GNDI Si82390/1/3 Figure 5.1. Si82390/1/3 Dual Isolated Drivers with Enhanced UVLO Safety silabs.com | Building a more connected world. Rev. 1.01 | 29 Si8239x Data Sheet Top-Level Block Diagrams ISOLATION VDDA VIA VOA UVLO GNDA VDDI VDDI UVLO ISOLATION VDDB EN VOB UVLO GNDB VIB RDY GNDI Si82392/5/6 Figure 5.2. Si82392/5/6 Dual Isolated Drivers with RDY Pin Figure 5.3. Si82394/98 Single-Input High-Side/Low-Side Isolated Drivers silabs.com | Building a more connected world. Rev. 1.01 | 30 Si8239x Data Sheet Top-Level Block Diagrams Figure 5.4. Si82397 Dual Isolated Drivers silabs.com | Building a more connected world. Rev. 1.01 | 31 Si8239x Data Sheet Pin Descriptions 6. Pin Descriptions VIA 1 16 VDDA VIB 2 15 VOA VDDI 3 14 GNDI 4 13 EN 5 NC 6 RDY VDDI PWM 1 16 VDDA VIA 1 16 VDDA VIB 2 15 VOA 14 GNDA 13 NC NC 2 15 VOA GNDA VDDI 3 14 GNDA VDDI 3 NC GNDI 4 13 NC GNDI 4 12 NC EN 5 12 NC EN 5 12 NC 11 VDDB DT 6 11 VDDB NC 6 11 VDDB 7 10 VOB RDY 7 10 VOB NC 7 10 VOB 8 9 VDDI 8 9 VDDI 8 9 Si82390/91/3 Si82392/5/96 GNDB Si82394/8 GNDB Si82397 GNDB Figure 6.1. Si8239x SOIC-16 Table 6.1. Pin Descriptions Pin Name Description GNDI Input-side ground terminal. PWM PWM input VIA Non-inverting logic input terminal for Driver A. VIB Non-inverting logic input terminal for Driver B. VDDI Input-side power supply terminal; connect to a source of 2.5 to 5.5 V. EN Device ENABLE. When low or NC, this input unconditionally drives outputs VOA, VOB LOW. When high, device is enabled to perform in normal operating mode. It is strongly recommended that this input be connected to external logic level to avoid erroneous operation due to capacitive noise coupling. DT Dead time programming input. The value of the resistor connected from DT to ground sets the dead time between output transitions of VOA and VOB. NC No connection. GNDB VOB Ground terminal for Driver B. Driver B output (low-side driver). VDDB Driver B power supply voltage terminal; connect to a source of 6.5 to 24 V. GNDA Ground terminal for Driver A. VOA VDDA RDY Driver A output (high-side driver). Driver A power supply voltage terminal; connect to a source of 6.5 to 24 V. Power ready on secondary side for Driver A and Driver B (both UVLO thresholds for VDDA and VDDB need to be crossed). High state indicates UVLO thresholds crossed, low state indicates UVLO low condition. No reset is necessary. silabs.com | Building a more connected world. Rev. 1.01 | 32 Si8239x Data Sheet Package Outline: 16-Pin Wide Body SOIC 7. Package Outline: 16-Pin Wide Body SOIC The following figure illustrates the package details for the Si8239x in a 16-Pin Wide Body SOIC. The table lists the values for the dimensions shown in the illustration. Figure 7.1. 16-Pin Wide Body SOIC Table 7.1. Package Diagram Dimensions Symbol Millimeters Min Max A -- 2.65 A1 0.10 0.30 A2 2.05 -- b 0.31 0.51 c 0.20 0.33 D 10.30 BSC E 10.30 BSC E1 7.50 BSC e 1.27 BSC L 0.40 1.27 h 0.25 0.75 silabs.com | Building a more connected world. Rev. 1.01 | 33 Si8239x Data Sheet Package Outline: 16-Pin Wide Body SOIC Symbol Millimeters Min Max 0 8 aaa -- 0.10 bbb -- 0.33 ccc -- 0.10 ddd -- 0.25 eee -- 0.10 fff -- 0.20 Note: 1. All dimensions shown are in millimeters (mm) unless otherwise noted. 2. Dimensioning and Tolerancing per ANSI Y14.5M-1994. 3. This drawing conforms to JEDEC Outline MS-013, Variation AA. 4. Recommended reflow profile per JEDEC J-STD-020 specification for small body, lead-free components. silabs.com | Building a more connected world. Rev. 1.01 | 34 Si8239x Data Sheet Land Pattern: 16-Pin Wide Body SOIC 8. Land Pattern: 16-Pin Wide Body SOIC The following figure illustrates the recommended land pattern details for the Si8239x in a 16-Pin Wide-Body SOIC. The table lists the values for the dimensions shown in the illustration. Figure 8.1. 16-Pin Wide Body SOIC PCB Land Pattern Table 8.1. 16-Pin Wide Body SOIC Land Pattern Dimensions Dimension Feature (mm) C1 Pad Column Spacing 9.40 E Pad Row Pitch 1.27 X1 Pad Width 0.60 Y1 Pad Length 1.90 Note: 1. This Land Pattern Design is based on IPC-7351 pattern SOIC127P1032X265-16AN for Density Level B (Median Land Protrusion). 2. All feature sizes shown are at Maximum Material Condition (MMC) and a card fabrication tolerance of 0.05 mm is assumed. silabs.com | Building a more connected world. Rev. 1.01 | 35 Si8239x Data Sheet Package Outline: 16-Pin Narrow Body SOIC 9. Package Outline: 16-Pin Narrow Body SOIC The following figure illustrates the package details for the Si8239x in a 16-Pin Narrow-Body SOIC. The table lists the values for the dimensions shown in the illustration. Figure 9.1. 16-Pin Narrow Body SOIC Table 9.1. Package Diagram Dimensions Dimension Min Max Dimension Min Max A -- 1.75 L 0.40 1.27 A1 0.10 0.25 L2 A2 1.25 -- h 0.25 0.50 b 0.31 0.51 0 8 c 0.17 0.25 aaa 0.10 0.25 BSC D 9.90 BSC bbb 0.20 E 6.00 BSC ccc 0.10 E1 3.90 BSC ddd 0.25 e 1.27 BSC Note: 1. All dimensions shown are in millimeters (mm) unless otherwise noted. 2. Dimensioning and Tolerancing per ANSI Y14.5M-1994. 3. This drawing conforms to the JEDEC Solid State Outline MS-012, Variation AC. 4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components. silabs.com | Building a more connected world. Rev. 1.01 | 36 Si8239x Data Sheet Land Pattern: 16-Pin Narrow Body SOIC 10. Land Pattern: 16-Pin Narrow Body SOIC The following figure illustrates the recommended land pattern details for the Si8239x in a 16-Pin Narrow-Body SOIC. The table lists the values for the dimensions shown in the illustration. Figure 10.1. 16-Pin Narrow Body SOIC PCB Land Pattern Table 10.1. 16-Pin Narrow Body SOIC Land Pattern Dimensions Dimension Feature (mm) C1 Pad Column Spacing 5.40 E Pad Row Pitch 1.27 X1 Pad Width 0.60 Y1 Pad Length 1.55 Note: 1. This Land Pattern Design is based on IPC-7351 pattern SOIC127P600X165-16N for Density Level B (Median Land Protrusion). 2. All feature sizes shown are at Maximum Material Condition (MMC) and a card fabrication tolerance of 0.05 mm is assumed. silabs.com | Building a more connected world. Rev. 1.01 | 37 Si8239x Data Sheet Top Markings 11. Top Markings 11.1 Si8239x Top Marking (16-Pin Wide Body SOIC) 11.2 Top Marking Explanation (16-Pin Wide Body SOIC) Line 1 Marking: Base Part Number Si8239 = ISOdriver product series Ordering Options Y = Output configuration: 0, 1, 3, 4, 5, 6, 7, 8 See Ordering Guide for more information. 0, 1, 5, 6, 7 = Dual drivers 3 = Dual input (VIA, VIB) High Side/Low Side drivers 4, 8 = PWM input High side/Low side drivers U = UVLO level: A, B, C A = 6 V; B = 8 V; C = 12 V V = Isolation rating: B, D B = 2.5 kV; D = 5.0 kV D = Dead time setting range: none, 4 none = 10-200 ns; 4 = 40-600 ns Line 2 Marking: YY = Year WW = Workweek Line 3 Marking: Assigned by the Assembly House. Corresponds to the year and workweek of the mold date. TTTTTT = Mfg Code Manufacturing Code from Assembly Purchase Order form. Circle = 1.5 mm Diameter "e4" Pb-Free Symbol (Center Justified) Country of Origin TW = Taiwan ISO Code Abbreviation silabs.com | Building a more connected world. Rev. 1.01 | 38 Si8239x Data Sheet Top Markings 11.3 Si8239x Top Marking (16-Pin Narrow Body SOIC) 11.4 Top Marking Explanation (16-Pin Narrow Body SOIC) Line 1 Marking: Base Part Number Si8239 = ISOdriver product series Ordering Options Y = Output configuration: 0, 1, 2, 4, 5, 6, 7, 8 See Ordering Guide for more information. 0, 1, 5, 6, 7 = Dual drivers 2 = Dual input (VIA, VIB) High side/Low side drivers 4, 8 = PWM input High side/Low side drivers U = UVLO level: A, B, C A = 6 V; B = 8 V; C = 12 V V = Isolation rating: B, D B = 2.5 kV; D = 5.0 kV D = Dead time setting range: none, 4 none = 10-200; 4 = 40-600 Line 2 Marking: YY = Year WW = Workweek TTTTTT = Mfg Code silabs.com | Building a more connected world. Assigned by the Assembly House. Corresponds to the year and workweek of the mold date. Manufacturing Code from Assembly Purchase Order form. Rev. 1.01 | 39 Si8239x Data Sheet Revision History 12. Revision History Revision 1.01 July 2018 * Added Automotive-grade information including features, applications, and Ordering Guide table. silabs.com | Building a more connected world. Rev. 1.01 | 40 Smart. Connected. Energy-Friendly. Products Quality www.silabs.com/products www.silabs.com/quality Support and Community community.silabs.com Disclaimer Silicon Labs intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Silicon Labs products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. 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