2N7002
OptiMOS™ Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• Avalanche rated
• fast switching
• Pb-free lead-plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Vl
PG-SOT23
Type Package Tape and Reel Information Marking HalogenFree Packing
2N7002 PG-SOT-23 H6327: 3000 pcs/reel 72s Yes Non Dr
y
VDS 60 V
RDS(on),max VGS=10 V 3Ω
VGS=4.5 V 4
ID0.3 A
Product Summary
2
1
3
Rev. 2.4 page 1 2012-09-04
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C 0.30 A
TA=70 °C 0.24
Pulsed drain current ID,pulse TA=25 °C 1.2
Avalanche energy, single pulse EAS ID=0.3 A, RGS=25 Ω1.3 mJ
Reverse diode dv/dtdv/dtID=0.3 A, VDS=48 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
ESD class JESD22-A114 (HBM) class 0 (<250V)
Power dissipation Ptot
(2) TA=25 °C 0.5 W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
(1) J-STD20 and JESD22
V
alue
Rev. 2.4 page 1 2012-09-04
2N7002
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint(2) RthJA - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS= 0 V, ID=250 µA 60 - - V
Gate threshold voltage VGS(th) VDS=VGS , ID=250 µA 1.5 2.1 2.5
Drain-source leakage current ID (off) VDS=60 V,
VGS=0 V, Tj=25 °C - - 0.1 µA
VDS=60 V,
5
Values
Rev. 2.4 page 2 2012-09-04
VGS=0 V, Tj=150 °C --
5
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 10 nA
Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=0.25 A - 2.0 4 Ω
VGS=10 V, ID=0.5 A - 1.6 3
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=0.24 A 0.2 0.36 - S
(2) Perfomed on a 40x40mm2 FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70 μm thick and 20mm
long.
Rev. 2.4 page 2 2012-09-04
2N7002
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
Input capacitance Ciss -1320pF
Output capacitance Coss - 4.1 6
Reverse transfer capacitance Crss - 2.0 3
Turn-on delay time td(on) - 3.0 4.5 ns
Rise time tr- 3.3 5
Turn-off delay time td(off) - 5.5 9
Fall time tf- 3.1 5
Gate Charge Characteristics
Gate to source charge Qgs - 0.05 0.1 nC
Gate to drain charge Qgd - 0.2 0.4
Gate charge total Qg- 0.4 0.6
Gate plateau voltage Vplateau - 4.0 - V
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=30 V, VGS=10 V,
ID=0.5 A, RG=6 Ω
VDD=48 V, ID=0.5 A,
VGS=0 to 10 V
Rev. 2.4 page 3 2012-09-04
Reverse Diode
Diode continous forward current IS- - 0.3 A
Diode pulse current IS,pulse - - 1.2
Diode forward voltage VSD VGS=0 V, IF=0.5 A,
Tj=25 °C - 0.96 1.2 V
Reverse recovery time trr - 8.5 13 ns
Reverse recovery charge Qrr - 2.4 4 nC
VR=30 V, IF=0.5 A,
diF/dt=100 A/µs
TA=25 °C
Rev. 2.4 page 3 2012-09-04
2N7002
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
0
0.1
0.2
0.3
0.4
0.5
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0 40 80 120 160
ID[A]
TA[°C]
Rev. 2.4 page 4 2012-09-04
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-3
10-2
10-1
100
101
1 10 100
ID[A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100101102103
100
101
102
103
ZthJA [K/W]
tp[s]
0
0.1
0.2
0.3
0.4
0.5
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0 40 80 120 160
ID[A]
TA[°C]
Rev. 2.4 page 4 2012-09-04
2N7002
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
2.9 V 3.2 V 3.5 V 4 V
4.5 V
5 V
7 V
10 V
0
1
2
3
4
5
6
0 0.1 0.2 0.3 0.4 0.5
RDS(on) [Ω]
ID[A]
2.9 V
3.2 V
3.5 V
4 V
4.5 V
5 V
7 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
ID[A]
VDS [V]
Rev. 2.4 page 5 2012-09-04
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
2.9 V 3.2 V 3.5 V 4 V
4.5 V
5 V
7 V
10 V
0
1
2
3
4
5
6
0 0.1 0.2 0.3 0.4 0.5
RDS(on) [Ω]
ID[A]
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
ID[A]
VGS [V]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.0 0.1 0.2 0.3 0.4 0.5
gfs [S]
ID[A]
2.9 V
3.2 V
3.5 V
4 V
4.5 V
5 V
7 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
ID[A]
VDS [V]
Rev. 2.4 page 5 2012-09-04
2N7002
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.3 A; VGS=10 V VGS(th)=f(Tj); VDS=VGS; ID=250 µA
parameter: ID
typ
98 %
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-60 -20 20 60 100 140
RDS(on) [Ω]
Tj[°C]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-60 -20 20 60 100 140
VGS(th) [V]
Tj[°C]
Rev. 2.4 page 6 2012-09-04
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-60 -20 20 60 100 140
RDS(on) [Ω]
Tj[°C]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-60 -20 20 60 100 140
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
100
101
102
0 102030
C[pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-3
10-2
10-1
100
101
0 0.4 0.8 1.2 1.6
IF[A]
VSD [V]
Rev. 2.4 page 6 2012-09-04
2N7002
13 Avalanche characteristics 14 Typ. gate charge
IAS =f(tAV ); RGS =25ΩVGS=f(Qgate); ID=0.5 A pulsed
parameter: Tj(start) parameter: VDD
12 V
30 V
48 V
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
100101102103
10-3
10-2
10-1
100
IAV [A]
tAV [µs]
Rev. 2.4 page 7 2012-09-04
15 Drain-source breakdown voltage
VBR(DSS)=f(Tj); ID=250 µA
50
55
60
65
70
-40 0 40 80 120 160
VBR(DSS) [V]
Tj[°C]
12 V
30 V
48 V
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
100101102103
10-3
10-2
10-1
100
IAV [A]
tAV [µs]
Rev. 2.4 page 7 2012-09-04
2N7002
Packa
g
e Outline:
Footprint: Packing:
Rev. 2.4 page 8 2012-09-04
Dimensions in mm
Rev. 2.4 page 8 2012-09-04
2N7002
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
Rev. 2.4 page 9 2012-09-04
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.4 page 9 2012-09-04
