MITSUBISHI INTELLIGENT POWER MODULES PM150CVA120 FLAT-BASE TYPE INSULATED PACKAGE TERMINAL CODE 1. WFO 11. UP 2. VWPC 12. VUP1 3. WP 13. NC 14. FO 4. VWP1 5. VFO 15. VNC 16. VN1 6. VVPC 17. UN 7. VP 18. VN 8. VVP1 19. WN 9. UFO 10. VUPC A D Q N P P M R 1234 U 5678 9 10 1112 B K E U V 13 14 15 16 17 18 19 L - TYP. U V M W T (4 TYP.) N CC (4 PLACES) AA - TYP. J TYP. S NUTS (5 TYP.) SEE DETAIL A W Z - TYP. H BB SQ PIN - TYP. (19 PLACES) C G Y DETAIL A F VWP1 WFO WP VWPC VVP1 VFO VP VVPC VUP1 UFO UP VUPC GND FO IN VCC GND FO IN VCC GND FO IN VCC GND GND GND GND GND VN UN GND FO IN VCC VN1 WN VNC FO NC GND FO IN VCC Features: u Complete Output Power Circuit RfO GND FO IN VCC TEMP GND OUT Si TH Si OUT Si OUT Si OUT Si OUT Si u Gate Drive Circuit OUT u Protection Logic - Short Circuit - Over Temperature - Under Voltage RfO = 1.5k OHM N W V U P Outline Drawing and Circuit Diagram Dimensions A B C Inches Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. Inches Millimeters 5.31 Millimeters 135.0 P 0.29 7.25 4.33 110.0 Q 1.98 50.25 R 1.03 26.25 1.14 +0.04/-0.02 29.0 +1.0/-0.5 Dimensions D 4.740.010 120.50.25 S M5 Metric M5 E 3.760.010 95.50.25 T 0.22 Dia. Dia. 5.5 F 0.16 4.0 U 0.560.010 14.10.25 G 1.14 29.0 V 1.720.012 43.570.3 H 0.41 10.4 W 0.570.012 14.60.3 J 1.10 28.0 Y 1.04 K 3.82 97.0 Z 0.100.010 2.540.25 L 0.55 14.0 AA 1.370.010 3.490.25 M 0.59 15.0 BB N 0.88 22.25 CC 0.02 SQ 0.12 +0.04/-0.02 Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM150CVA120 is a 1200V, 150 Ampere Intelligent Power Module. Type 26.5 PM Current Rating Amperes VCES Volts (x 10) 150 120 0.64 SQ 3.0 +1.0/-0.5 Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM150CVA120 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25C unless otherwise specified Ratings Symbol PM150CVA120 Units Tj -20 to 150 C Storage Temperature Tstg -40 to 125 C Case Operating Temperature TC -20 to 100 C Mounting Torque, M5 Mounting Screws -- 2.5 ~ 3.5 N*m Mounting Torque, M5 Main Terminal Screws -- 2.5 ~ 3.5 N*m Power Device Junction Temperature Module Weight (Typical) -- 1000 Grams Supply Voltage (Applied between P - N) VCC(surge) 1000 Volts Supply Voltage Protected by SC (VD = 13.5 ~16.5V, Inverter Part, Tj = 125C Start) VCC(prot.) 800 Volts Viso 2500 Vrms Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) VD 20 Volts Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN * VN * WN-VNC) VCIN 20 Volts Fault Output Supply Voltage (Applied between UFO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC ) VFO 20 Volts Fault Output Current (Sink Current at UFO, VFO, WFO and FO Terminal) IFO 20 mA VCES 1200 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Control Sector IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, (TC = 25C) Peak Collector Current, (TC = 25C) Collector Dissipation (TC = 25C) IC 150 Amperes ICP 300 Amperes PC 780 Watts Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM150CVA120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units SC -20C Tj 125C, VD = 15V 200 -- -- Amperes Control Sector Short Circuit Trip Level toff(SC) VD = 15V -- 10 -- s Over Temperature Protection OT Trip Level 100 110 120 C (VD = 15V, Lower Arm) OTr Reset Level 85 95 105 C Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts (-20C Tj 125C) UVr Reset Level -- 12.5 -- Volts ID VD = 15V, VCIN = 15V, VN1-VNC -- 72 100 mA VD = 15V, VCIN = 15V, VXP1-VXPC -- 24 34 mA Input ON Threshold Voltage Vth(on) Applied between UP-VUPC, VP-VVPC, 1.2 1.5 1.8 Volts Input OFF Threshold Voltage Vth(off) WP-VWPC, UN * VN * WN-VNC 1.7 2.0 2.3 Volts Fault Output Current IFO(H) VD = 15V, VFO = 15V -- -- 0.01 mA IFO(L) VD = 15V, VFO = 15V -- 10 15 mA tFO VD = 15V 1.0 1.8 -- ms Short Circuit Current Delay Time Circuit Current Minimum Fault Output Pulse Width Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM150CVA120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units VCE = VCES, VD = 15V, Tj = 25C -- -- 1.0 mA IGBT Inverter Sector Collector-Emitter Cutoff Current ICES VCE = VCES, VD = 15V, Tj = 125C -- -- 10.0 mA FWDi Forward Voltage VEC -IC = 150A, VD = 15V, VCIN = 15V -- 2.50 3.50 Volts VCE(sat) VD = 15V, VCIN = 0V, IC = 150A, -- 2.65 3.30 Volts -- 2.60 3.25 Volts Collector-Emitter Saturation Voltage Pulsed, Tj = 25C VD = 15V, VCIN = 0V, IC = 150A, Pulsed, Tj = 125C Inductive Load Switching Times 0.4 0.9 2.3 s trr VD = 15V, VCIN = 0 15V -- 0.2 0.3 s tC(on) VCC = 600V, IC = 150A, -- 0.4 1.0 s toff Tj = 125C -- 2.4 3.4 s -- 0.7 1.2 s ton tC(off) Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT -- -- 0.16 C/Watt Contact Thermal Resistance Rth(j-c)F Each Inverter FWDi -- -- 0.26 C/Watt Rth(c-f) Case to Fin Per Module, -- -- 0.018 C/Watt Value Units Thermal Grease Applied Recommended Conditions for Use Characteristic Supply Voltage Symbol Condition VCC Applied across P-N Terminals 800 Volts VCE(surge) Applied across P-N Terminals 1000 Volts Applied between VUP1-VUPC, 15 1.5 Volts VD VVP1-VVPC, VWP1-VWPC, VN1-VNC Input ON Voltage VCIN(on) Applied between 0.8 Volts Input OFF Voltage VCIN(off) UP-VUPC, VP-VVPC, WP-VWPC, 4.0 Volts tdead For IPM's each Input Signal 3.0 s UN * VN * WN-VNC Arm Shoot-Through Blocking Time Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM150CVA120 FLAT-BASE TYPE INSULATED PACKAGE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) 1.0 1.0 VD = 15V VCIN = 0V Tj = 25C Tj = 125C 0 IC = 150A VCIN = 0V Tj = 25C Tj = 125C 0 100 200 300 15 VD = 17V 100 13 50 0 0 13 15 17 0 10 20 30 CONTROL SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS CHARACTERISTICS (TYPICAL) 100 ton VCC = 600V VD = 15V Inductive Load Tj = 25C Tj = 125C 10-1 101 102 SWITCHING ENERGY, PSW(on), PSW(off), (mJ/PULSE) SWITCHING TIMES, tc(on), tc(off), (s) 101 toff VCC = 600V VD = 15V Inductive Load Tj = 25C Tj = 125C 100 tc(off) tc(on) 10-1 101 103 102 103 102 VCC = 600V VD = 15V Inductive Load Tj = 25C Tj = 125C 101 PSW(off) PSW(on) PSW(off) 100 10-1 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) DIODE FORWARD CHARACTERISTICS CIRCUIT CURRENT VS. CARRIER FREQUENCY Irr trr 10-1 102 VCC = 600V VD = 15V Inductive Load Tj = 25C Tj = 125C 102 COLLECTOR CURRENT, IC, (AMPERES) 101 103 VD = 15V VCIN = 15V Tj = 25C Tj = 125C VD = 15V Tj = 25C CIRCUIT CURRENT, ID, (mA) Irr trr 150 103 EMITTER CURRENT, IE, (AMPERES) 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 100 10-2 101 Tj = 25oC VCIN = 0V COLLECTOR CURRENT, IC, (AMPERES) 101 SWITCHING TIMES, ton, toff, (s) 150 2.0 2.0 0 REVERSE RECOVERY TIME, trr, (s) OUTPUT CHARACTERISTICS (TYPICAL) 3.0 3.0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(SAT), (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE(SAT), (VOLTS) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 102 101 N-SIDE 100 50 P-SIDE 0 0 1.0 2.0 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 0 10 20 30 CARRIER FREQUENCY, fC, (kHz) Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM150CVA120 OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) Tj = 25C 1.0 0.8 0 13 15 17 1.2 1.2 1.0 1.0 0.8 0.8 VD = 15V 0 -60 CONTROL SUPPLY VOLTAGE, VD, (VOLTS) VD = 15V UVt UVr 13 11 100 JUNCTION TEMPERATURE, Tj, (C) 100 180 180 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.16C/W 10-2 10-1 TIME, (s) 100 100 180 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 10-3 10-3 20 JUNCTION TEMPERATURE, Tj, (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) SUPPLY CIRCUIT UNDER VOLTAGE PROTECTION TRIP RESET LEVEL, UVt, UVr, (VOLTS) 15 20 20 VD = 15V 0 -60 JUNCTION TEMPERATURE, Tj, (C) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) 0 -60 FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) 10 1 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 0 OVER CURRENT TRIP LEVEL TEMPERATURE DEPENDENCY (TYPICAL) FAULT OUTPUT PULSE WIDTH TRIP LEVEL, tFO (Tj = 25C) = 1.0 1.2 SHORT CIRCUIT CURRENT TRIP LEVEL, (Tj = 25C) = 1.0 SHORT CIRCUIT CURRENT TRIP LEVEL, (VD = 15V) = 1.0 FLAT-BASE TYPE INSULATED PACKAGE 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 0.25C/W 10-3 10-3 10-2 10-1 100 10 1 TIME, (s) Sep.1998