K4H280438F-UCA00 - Samsung Semiconductor Division

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

128Mb F-die DDR SDRAM Specification

Revision 1.0

May 2004

66 TSOP-II with Pb-Free

(RoHS compliant)

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

128Mb F-die Revision History

Revision 1.0 (April, 2004)

- Revision 1.0 spec. release.

Revision 1.1 (May, 2004)

- Corrected typo.

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Four banks operation

• Differential clock inputs(CK and CK)

• DLL aligns DQ and DQS transition with CK transition

• MRS cycle with address key programs

-. Read latency 2, 2.5 (clock)

-. Burst length (2, 4, 8)

-. Burst type (sequential & interleave)

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)

• Data I/O transactions on both edges of data strobe

• Edge aligned data output, center aligned data input

• DM for write masking only (x4, x8)

• Auto & Self refresh

• 15.6us refresh interval(4K/64ms refresh)

• Maximum burst refresh cycle : 8

• 66pin TSOP II Pb-Free package

• RoHS compliant

Ordering Information

Part No. Org. Max Freq. Interface Package

K4H280438F-UC/LA2

32M x 4

A2(DDR266@CL=2)

SSTL2 66pin TSOP IIK4H280438F-UC/LB0 B0(DDR266@CL=2.5)

K4H280438F-UC/LA0 A0(DDR200@CL=2)

K4H280838F-UC/LB3

16M x 8

B3(DDR333@CL=2.5)

SSTL2 66pin TSOP IIK4H280838F-UC/LA2 A2(DDR266@CL=2)

K4H280838F-UC/LB0 B0(DDR266@CL=2.5)

Key Features

*CL : CAS Latency

Operating Frequencies

B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5) A0(DDR200@CL=2.0)

Speed @CL2 133MHz 133MHz 100MHz 100MHz

Speed @CL2.5 166MHz 133MHz 133MHz -

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

128Mb Package Pinout

Row & Column address configuration

66Pin TSOP

(400mil x 875mil)

DDQ

NC 4

SSQ

NC 7

DDQ

NC 10

SSQ

RAS

CAS

15V

DDQ

NC 13

AP/A

SSQ

DDQ

SSQ

DDQ

CKE

REF

SSQ

(0.65mm Pin Pitch)

DQS

SSQ

DDQ

SSQ

DDQ

CKE

REF

SSQ

DQS

DDQ

SSQ

DDQ

SSQ

RAS

CAS

DDQ

AP/A

Bank Address

BA0~BA1

Auto Precharge

A10

Organization Row Address Column Address

32Mx4 A0~A11 A0-A9, A11

16Mx8 A0~A11 A0-A9

Pin Description

16Mx8

32Mx4

DM is internally loaded to match DQ and DQS identically.

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

Units : Millimeters

0.30±0.08

0.65TYP(0.71)

22.22±0.10

0.125

(0.80)

10.16±0.10

0×~8×

#1 #33

#66 #34

(1.50)

0.65±0.08

1.00±0.10

1.20MAX

(0.50) (0.50)(10.16)

11.76±0.20

(10×)(10×)

+0.075

-0.035

(0.80)

0.10 MAX

0.075 MAX

[]

0.05 MIN

(10×)

(R0.15)

0.210±0.05

0.665±0.05

(R0.15)

(4×)

(R0.25)

0.45~0.75

0.25TYP

NOTE

1. ( ) IS REFERENCE

2. [ ] IS ASS’Y OUT QUALITY

66pin TSOPII / Package dimension

Package Physical Dimension

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

Bank Select

Timing Register

Address Register

Refresh Counter

Row Buffer

Row Decoder Col. Buffer

Data Input Register

Serial to parallel

4Mx8/ 2Mx16

Sense AMP

2-bit prefetch

Output BufferI/O Control

Column Decoder

Latency & Burst Length

Programming Register

DLL

Strobe

Gen.

CK, CK

ADD

LCKE

CK, CK CKE CS RAS CAS WE L(U)DM

(L)DM

CK, CK

LCAS

LRAS LCBR LWE

LWCBR

LRAS

LCBR

CK, CK

8/16

8/16 4/8

4/8 (L)WE

(L)DM

x4/x8

DQi

Data Strobe

Block Diagram (8Mbit x 4 / 4Mbit x 8 I/O x 4 Banks)

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

SYMBOL TYPE DESCRIPTION

CK, CK Input

Clock : CK and CK are differential clock inputs. All address and control input signals are sam-

pled on the positive edge of CK and negative edge of CK. Output (read) data is referenced to

both edges of CK. Internal clock signals are derived from CK/CK.

CKE Input

Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and

device input buffers and output drivers. Deactivating the clock provides PRECHARGE

POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER-DOWN

(row ACTIVE in any bank). CKE is synchronous for all functions except for disabling outputs,

which is achieved asynchronously. Input buffers, excluding CK, CK and CKE are disabled dur-

ing power-down and self refresh modes, providing low standby power. CKE will recognize an

LVCMOS LOW level prior to VREF being stable on power-up.

CS Input

Chip Select : CS enables(registered LOW) and disables(registered HIGH) the command

decoder. All commands are masked when CS is registered HIGH. CS provides for external

bank selection on systems with multiple banks. CS is considered part of the command code.

RAS, CAS, WE Input Command Inputs : RAS, CAS and WE (along with CS) define the command being entered.

LDM,(UDM) Input

Input Data Mask : DM is an input mask signal for write data. Input data is masked when DM is

sampled HIGH along with that input data during a WRITE access. DM is sampled on both

edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS

loading. For the x16, LDM corresponds to the data on DQ0~D7 ; UDM corresponds to the data

on DQ8~DQ15. DM may be driven high, low, or floating during READs.

BA0, BA1 Input Bank Addres Inputs : BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRE-

CHARGE command is being applied.

A [0 : 11] Input

Address Inputs : Provide the row address for ACTIVE commands, and the column address and

AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the mem-

ory array in the respective bank. A10 is sampled during a PRECHARGE command to deter-

mine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If

only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also

provide the op-code during a MODE REGISTER SET command. BA0 and BA1 define which

mode register is loaded during the MODE REGISTER SET command (MRS or EMRS).

A12 & A13 are used on device densities of 256Mb and greater, and A13 is used only on 1Gb

decices.

DQ I/O Data Input/Output : Data bus

LDQS,(U)DQS I/O

Data Strobe : Output with read data, input with write data. Edge-aligned with read data, cen-

tered in write data. Used to capture write data. For the x16, LDQS corresponds to the data on

DQ0~D7 ; UDQS corresponds to the data on DQ8~DQ15

NC - No Connect : No internal electrical connection is present.

VDDQ Supply DQ Power Supply : +2.5V ± 0.2V.

VSSQ Supply DQ Ground.

VDD Supply Power Supply : +2.5V ± 0.2V (device specific).

VSS Supply Ground.

VREF Input SSTL_2 reference voltage.

Input/Output Function Description

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

Command Truth Table (V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)

COMMAND CKEn-1 CKEn CS RAS CAS WE BA0,1 A10/AP A0 ~ A9, A11 Note

Refresh

Auto Refresh HHLL L H X 3

Self

Refresh

Entry L 3

Exit L H LH H H X3

HX X X 3

Bank Active & Row Addr. H X L L H H V Row Address

Read &

Column Address

Auto Precharge Disable HXLHLHV LColumn

Address

Auto Precharge Enable H 4

Write &

Column Address

Auto Precharge Disable HXLHLLV LColumn

Address

Auto Precharge Enable H 4, 6

Burst Stop H X L H H L X 7

Precharge Bank Selection HXLLHL

VL X

All Banks X H 5

Active Power Down Entry H L HX X X

XLV V V

Exit L H X X X X

Precharge Power Down Mode

Entry H L HX X X

LH H H

Exit L H HX X X

LV V V

DM(UDM/LDM for x16 only) H X X 8

No operation (NOP) : Not defined H X HX X X X9

LH H H 9

1. OP Code : Operand Code. A0 ~ A11 & BA0 ~ BA1 : Program keys. (@EMRS/MRS)

2. EMRS/MRS can be issued only at all banks precharge state.

A new command can be issued 2 clock cycles after EMRS or MRS.

3. Auto refresh functions are same as the CBR refresh of DRAM.

The automatical precharge without row precharge command is meant by "Auto".

Auto/self refresh can be issued only at all banks precharge state.

4. BA0 ~ BA1 : Bank select addresses.

If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.

If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.

If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.

If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.

5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected.

6. During burst write with auto precharge, new read/write command can not be issued.

Another bank read/write command can be issued after the end of burst.

New row active of the associated bank can be issued at tRP after the end of burst.

7. Burst stop command is valid at every burst length.

8. DM(x4/8) sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).

UDM/LDM(x16 only) sampled at the rising and falling edges of the UDQS/LDQS and Data-in are masked at the both edges

(Write UDM/LDM latency is 0).

9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.

Note :

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

8M x 4Bit x 4 Banks / 4M x 8Bit x 4 Banks Double Data Rate SDRAM

The K4H280438F / K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304

words by 4/ 8bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow

extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequen-

cies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory

system applications.

General Description

Absolute Maximum Ratings

Parameter Symbol Value Unit

Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V

Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V

Storage temperature TSTG -55 ~ +150 °C

Power dissipation PD1.5 W

Short circuit current IOS 50 mA

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommend operation condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC Operating Conditions Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C)

Parameter Symbol Min Max Unit Note

Supply voltage(for device with a nominal VDD of 2.5V) VDD 2.3 2.7

I/O Supply voltage VDDQ 2.3 2.7 V

I/O Reference voltage VREF 0.49*VDDQ 0.51*VDDQ V 1

I/O Termination voltage(system) VTT VREF-0.04 VREF+0.04 V2

Input logic high voltage VIH(DC) VREF+0.15 VDDQ+0.3 V

Input logic low voltage VIL(DC) -0.3 VREF-0.15 V

Input Voltage Level, CK and CK inputs VIN(DC) -0.3 VDDQ+0.3 V

Input Differential Voltage, CK and CK inputs VID(DC) 0.36 VDDQ+0.6 V 3

V-I Matching: Pullup to Pulldown Current Ratio VI(Ratio) 0.71 1.4 - 4

Input leakage current II-2 2 uA

Output leakage current IOZ -5 5 uA

Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V IOH -16.8 mA

Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V IOL 16.8 mA

Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V IOH -9 mA

Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V IOL 9mA

1.VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same.

Peak-to peak noise on VREF may not exceed +/-2% of the dc value.

2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to

VREF, and must track variations in the DC level of VREF

3. VID is the magnitude of the difference between the input level on CK and the input level on CK.

4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire

temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the

maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the

maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.

Note :

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

DDR SDRAM Spec Items & Test Conditions

Conditions Symbol

Operating current - One bank Active-Precharge;

tRC=tRCmin; tCK=7.5ns for DDR266, 6ns for DDR333;

DQ,DM and DQS inputs changing once per clock cycle;

address and control inputs changing once every two clock cycles.

IDD0

Operating current - One bank operation ; One bank open, BL=4, Reads

- Refer to the following page for detailed test condition IDD1

Percharge power-down standby current; All banks idle; power - down mode;

CKE = <VIL(max); tCK=7.5ns for DDR266, 6ns for DDR333; Vin = Vref for DQ,DQS and DM. IDD2P

Precharge Floating standby current; CS# > =VIH(min);All banks idle; CKE > = VIH(min); tCK=7.5ns for DDR266,

6ns for DDR333; Address and other control inputs changing once per clock cycle;

Vin = Vref for DQ,DQS and DM

IDD2F

Precharge Quiet standby current; CS# > = VIH(min); All banks idle;

CKE > = VIH(min); tCK=7.5ns for DDR266, 6ns for DDR333; Address and other control inputs stable at >=

VIH(min) or =<VIL(max); Vin = Vref for DQ ,DQS and DM

IDD2Q

Active power - down standby current ; one bank active; power-down mode;

CKE=< VIL (max); tCK=7.5ns for DDR266, 6ns for DDR333; Vin = Vref for DQ,DQS and DM IDD3P

Active standby current; CS# >= VIH(min); CKE>=VIH(min);

one bank active; active - precharge; tRC=tRASmax; tCK=7.5ns for DDR266, 6ns for DDR333;

DQ, DQS and DM inputs changing twice per clock cycle; address and other control inputs changing once per clock

cycle

IDD3N

Operating current - burst read; Burst length = 2; reads; continguous burst; One bank active; address and control

inputs changing once per clock cycle; CL=2 at 7.5ns for DDR266(A2), CL=2.5 at 7.5ns for DDR266(B0), 6ns for

DDR333; 50% of data changing on every transfer; lout = 0 m A

IDD4R

Operating current - burst write; Burst length = 2; writes; continuous burst;

One bank active address and control inputs changing once per clock cycle; CL=2 at tCK=7.5ns for DDR266(A2),

CL=2.5 at tCK=7.5ns for DDR266(B0), 6ns for DDR333; DQ, DM and DQS inputs changing twice per clock cycle,

50% of input data changing at every burst

IDD4W

Auto refresh current; tRC = tRFC(min) - 10*tCK for DDR266 at tCK=7.5ns; 12*tCK for DDR333 at tCK=6ns; dis-

tributed refresh IDD5

Self refresh current; CKE =< 0.2V; External clock on; tCK = 7.5ns for DDR266, 6ns for DDR333. IDD6

Orerating current - Four bank operation ; Four bank interleaving with BL=4

-Refer to the following page for detailed test condition IDD7A

Input/Output Capacitance (VDD=2.5, VDDQ=2.5V, TA= 25°C, f=1MHz)

Parameter Symbol Min Max Delta Unit Note

Input capacitance

(A0 ~ A11, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)CIN1 2 3 0.5 pF 4

Input capacitance( CK, CK ) CIN2 2 3 0.25 pF 4

Data & DQS input/output capacitance COUT 4 5

0.5

pF 1,2,3,4

Input capacitance(DM for x4/8, UDM/LDM for x16) CIN3 4 5 pF 1,2,3,4

1.These values are guaranteed by design and are tested on a sample basis only.

2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins.

This is required to match signal propagation times of DQ, DQS, and DM in the system.

3. Unused pins are tied to ground.

4. This parameteer is sampled. VDDQ = +2.5V +0.2V, VDD = +3.3V +0.3V or +2.5V+0.2V, f=100MHz, tA=25°C, Vout(dc) =

VDDQ/2, Vout(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading

(to facilitate trace matching at the board level).

Note :

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

DDR SDRAM IDD spec table (VDD=2.7V, T = 10’C)

Symbol

32Mx4 (K4H280438F)

Unit Notes

A2(DDR266@CL=2.0) B0(DDR266@CL=2.5) A0(DDR200@CL=2.0)

IDD0 80 80 75 mA

IDD1 105 105 95 mA

IDD2P 3 3 3 mA

IDD2F 18 18 18 mA

IDD2Q 15 15 15 mA

IDD3P 25 25 25 mA

IDD3N 35 35 35 mA

IDD4R 105 105 105 mA

IDD4W 120 120 120 mA

IDD5 150 150 150 mA

IDD6

Normal 2 2 2 mA

Low power 1 1 1 mA Optional

IDD7A 280 280 240 mA

Symbol

16Mx8 (K4H280838F)

Unit Notes

B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)

IDD0 85 85 75 mA

IDD1 110 110 100 mA

IDD2P 3 3 3 mA

IDD2F 22 20 20 mA

IDD2Q 20 15 15 mA

IDD3P 25 25 25 mA

IDD3N 40 35 35 mA

IDD4R 140 120 120 mA

IDD4W 145 125 125 mA

IDD5 165 155 155 mA

IDD6

Normal 2 2 2 mA

Low power 1 1 1 mA Optional

IDD7A 300 300 250 mA

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

IDD7A : Operating current: Four bank operation

1. Typical Case : Vdd = 2.5V, T=25’ C

2. Worst Case : Vdd = 2.7V, T= 10’ C

3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not

changing. lout = 0mA

4. Timing patterns

- B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge

Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing

*100% of data changing at every burst

- A2(133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge

Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing

*100% of data changing at every burst

- AA(133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge

Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing

*100% of data changing at every burst

- B3(166Mhz,CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRRD=2*tCK, tRCD=3*tCK, Read with autoprecharge

Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing

*100% of data changing at every burst

Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP

< Detailed test conditions for DDR SDRAM IDD1 & IDD7A >

IDD1 : Operating current: One bank operation

1. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once

per clock cycle. lout = 0mA

2. Timing patterns

- B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK

Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing

*50% of data changing at every burst

- A2 (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK

Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing

*50% of data changing at every burst

- AA (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 2*tCK, tRC = 8*tCK, tRAS = 6*tCK

Read : A0 N R0 N N N P0 N A0 N - repeat the same timing with random address changing

*50% of data changing at every burst

- B3(166Mhz, CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRCD=3*tCK, tRC = 10*tCK, tRAS=7*tCK

Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing

*50% of data changing at every burst

Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

AC Operating Conditions

Parameter/Condition Symbol Min Max-10 Unit Note

Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 V

Input Low (Logic 0) Voltage, DQ, DQS and DM signals. VIL(AC) VREF - 0.31 V

Input Differential Voltage, CK and /CK inputs VID(AC) 0.7 VDDQ+0.6 V 1

Input Crossing Point Voltage, CK and /CK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2

AC Overshoot/Undershoot specification for Address and Control Pins

Parameter Specification

DDR333 DDR266

Maximum peak amplitude allowed for overshoot TBD 1.5 V

Maximum peak amplitude allowed for undershoot TBD 1.5 V

The area between the overshoot signal and VDD must be less than or equal to TBD 4.5 V-ns

The area between the undershoot signal and GND must be less than or equal to TBD 4.5 V-ns

-1

-2

-3

-4

-5

0.5

0.6875

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.3125

6.5

7.0

VDD Overshoot

Maximum Amplitude = 1.5V

Area = 4.5V-ns

Maximum Amplitude = 1.5V

undershoot

GND

Volts (V)

Tims(ns)

AC overshoot/Undershoot Definition

Notes :

1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.

2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

Overshoot/Undershoot specification for Data, Strobe, and Mask Pins

Parameter Specification

DDR333 DDR266

Maximum peak amplitude allowed for overshoot TBD 1.2 V

Maximum peak amplitude allowed for undershoot TBD 1.2 V

The area between the overshoot signal and VDD must be less than or equal to TBD 2.4 V-ns

The area between the undershoot signal and GND must be less than or equal to TBD 2.4 V-ns

-1

-2

-3

-4

-5

0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0

VDDQ

Overshoot

Maximum Amplitude = 1.2V

Area = 2.5V-ns

Maximum Amplitude = 1.2V

undershoot

GND

Volts (V)

Tims(ns)

DQ/DM/DQS AC overshoot/Undershoot Definition

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

AC Timming Parameters & Specifications

Parameter Symbol

(DDR333@CL=2.5

(DDR266@CL=2.0

(DDR266@CL=2.5

(DDR200@CL=2.0 Unit Note

Min Max Min Max Min Max Min Max

Row cycle time tRC 60 65 65 70 ns

Refresh row cycle time tRFC 72 75 75 80 ns

Row active time tRAS 42 70K 45 120K 45 120K 48 120K ns

RAS to CAS delay tRCD 18 20 20 20 ns

Row precharge time tRP 18 20 20 20 ns

Row active to Row active delay tRRD 12 15 15 15 ns

Write recovery time tWR 15 15 15 15 ns

Last data in to Read commandtWTR1111tCK

Col. address to Col. address delaytCCD1111tCK

Clock cycle time CL=2.0 tCK 7.5 12 7.5 12 10 12 10 12 ns

CL=2.5 6 12 7.5 12 7.5 12 ns

Clock high level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK

Clock low level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK

DQS-out access time from CK/CK tDQSCK -0.6 +0.6 -0.75 +0.75 -0.75 +0.75 -0.8 +0.8 ns

Output data access time from CK/CK tAC -0.7 +0.7 -0.75 +0.75 -0.75 +0.75 -0.8 +0.8 ns

Data strobe edge to ouput data edge tDQSQ - 0.45 - 0.5 - 0.5 - 0.6 ns 12

Read Preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCK

Read Postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK

CK to valid DQS-in tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 0.75 1.25 tCK

DQS-in setup time tWPRES0000ns3

DQS-in hold time tWPRE 0.25 0.25 0.25 0.25 tCK

DQS falling edge to CK rising-setup time tDSS 0.2 0.2 0.2 0.2 tCK

DQS falling edge from CK rising-hold time tDSH 0.2 0.2 0.2 0.2 tCK

DQS-in high level width tDQSH 0.35 0.35 0.35 0.35 tCK

DQS-in low level width tDQSL 0.35 0.35 0.35 0.35 tCK

DQS-in cycle time tDSC 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCK

Address and Control Input setup time(fast) tIS 0.75 0.9 0.9 1.1 ns i,5.7

Address and Control Input hold time(fast) tIH 0.75 0.9 0.9 1.1 ns i,5.7

Address and Control Input setup time(slow) tIS 0.81.01.01.1ns

Address and Control Input hold time(slow) tIH 0.81.01.01.1ns

Data-out high impedence time from CK/CK tHZ +0.7 +0.75 +0.75 -0.8 +0.8 ns 1

Data-out low impedence time from CK/CK tLZ -0.7 +0.7 -0.75 +0.75 -0.75 +0.75 -0.8 +0.8 ns 1

Mode register set cycle time tMRD 12 15 15 16 ns

DQ & DM setup time to DQS tDS 0.45 0.5 0.5 0.6 ns j, k

DQ & DM hold time to DQS tDH 0.45 0.5 0.5 0.6 ns j, k

Control & Address input pulse width tIPW 2.2 2.2 2.2 2.5 ns 8

DQ & DM input pulse width tDIPW 1.75 1.75 1.75 2 ns 8

Power down exit time tPDEX 6 7.5 7.5 10 ns

Exit self refresh to non-Read command tXSNR 75 75 75 80 ns

Exit self refresh to read command tXSRD 200 200 200 200 tCK

Refresh interval time tREFI 7.8 7.8 7.8 15.6 us 4

Output Slew Rate Matching Ratio(rise to fall) tSLMR 0.67 1.5 0.67 1.5 0.67 1.5 0.67 1.5

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

Parameter Symbol

(DDR333@CL=2.5))

(DDR266@CL=2.0)

(DDR266@CL=2.5))

(DDR200@CL=2.0)) Unit Note

Min Max Min Max Min Max Min Max

Output DQS valid window tQH tHP

-tQHS -tHP

-tQHS -ns11

Clock half period tHP tCLmin

or tCHmin -tCLmin

or tCHmin -ns10, 11

Data hold skew factor tQHS 0.55 0.75 0.75 0.8 ns 11

DQS write postamble time tWPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK 2

Active to Read with Auto precharge

command tRAP 18 20 20 20

Autoprecharge write recovery +

Precharge time tDAL

(tWR/tCK)

(tRP/tCK)

(tWR/tCK)

(tRP/tCK)

(tWR/tCK)

(tRP/tCK)

(tWR/tCK)

(tRP/tCK)

tCK 13

AC Operating Test Conditions

(VDD=2.5V, VDDQ=2.5V, TA= 0 to 70°C)

Parameter Value Unit Note

Input reference voltage for Clock 0.5 * VDDQ V

Input signal maximum peak swing 1.5 V

Input signal minimum slew rate (for imput only) 0.5 V/ns

Input slew rate (I/O pins) 0.5 V/ns

Input Levels(VIH/VIL)VREF+0.31/VREF-0.31 V

Input timing measurement reference level VREF V

Output timing measurement reference level Vtt V

Output load condition See Load Circuit

AC operating test conditions

Output Load Circuit (SSTL_2)

Output Z0=50Ω

CLOAD=30pF

VREF

=0.5*VDDQ

RT=50Ω

Vtt=0.5*VDDQ

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

System Characteristics for DDR SDRAM

The following specification parameters are required in systems using DDR333, DDR266 devices to ensure proper system

performance. these characteristics are for system simulation purposes and are guaranteed by design.

Table 1 : Input Slew Rate for DQ, DQS, and DM

Table 2 : Input Setup & Hold Time Derating for Slew Rate

Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate

Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate

Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)

Table 6 : Output Slew Rate Characteristice (X16 Devices only)

Table 7 : Output Slew Rate Matching Ratio Characteristics

AC CHARACTERISTICS DDR333 DDR266

PARAMETER SYMBOL MIN MAX MIN MAX Units Notes

DQ/DM/DQS input slew rate measured between

VIH(DC), VIL(DC) and VIL(DC), VIH(DC) DCSLEW TBD TBD TBD TBD V/ns a, m

Input Slew Rate tIS tIH Units Notes

0.5 V/ns 0 0 ps i

0.4 V/ns +50 0 ps i

0.3 V/ns +100 0 ps i

Input Slew Rate tDS tDH Units Notes

0.5 V/ns 0 0 ps k

0.4 V/ns +75 +75 ps k

0.3 V/ns +150 +150 ps k

Delta Slew Rate tDS tDH Units Notes

+/- 0.0 V/ns 0 0 ps j

+/- 0.25 V/ns +50 +50 ps j

+/- 0.5 V/ns +100 +100 ps j

Slew Rate Characteristic Typical Range

(V/ns)

Minimum

(V/ns)

Maximum

(V/ns) Notes

Pullup Slew Rate 1.2 ~ 2.5 1.0 4.5 a,c,d,f,g,h

Pulldown slew 1.2 ~ 2.5 1.0 4.5 b,c,d,f,g,h

Slew Rate Characteristic Typical Range

(V/ns)

Minimum

(V/ns)

Maximum

(V/ns) Notes

Pullup Slew Rate 1.2 ~ 2.5 0.7 5.0 a,c,d,f,g,h

Pulldown slew 1.2 ~ 2.5 0.7 5.0 b,c,d,f,g,h

AC CHARACTERISTICS DDR266

PARAMETER MIN MAX Notes

Output Slew Rate Matching Ratio (Pullup to Pulldown) TBD TBD e,m

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

Component Notes

1. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. these parameters are not referenced to a

specific voltage level but specify when the device output in no longer driving (HZ), or begins driving (LZ).

2. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but sys

tem performance (bus turnaround) will degrade accordingly.

3. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A

valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previ

ously in progress on the bus, DQS will be tran sitioning from High- Z to logic LOW. If a previous write was in progress, DQS could

be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.

4. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.

5. For command/address input slew rate ≥ 1.0 V/ns

6. For command/address input slew rate ≥ 0.5 V/ns and < 1.0 V/ns

7. For CK & CK slew rate ≥ 1.0 V/ns

8. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by

device design or tester correlation.

9. Slew Rate is measured between VOH(ac) and VOL(ac).

10. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this

value can be greater than the minimum specification limits for tCL and tCH).....For example, tCL and tCH are = 50% of the

period, less the half period jitter (tJIT(HP)) of the clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk)) into

the clock traces.

11. tQH = tHP - tQHS, where:

tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The

pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one tansition followed by the worst

case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and p-

channel to n-channel variation of the output drivers.

12. tDQSQ

Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given cycle.

13. tDAL = (tWR/tCK) + (tRP/tCK)

For each of the terms above, if not already an integer, round to the next highest integer. Example: For DDR266B at CL=2.5 and

tCK=7.5ns tDAL = (15 ns / 7.5 ns) + (20 ns/ 7.5ns) = (2) + (3)

tDAL = 5 clocks

System Notes :

a. Pullup slew rate is characteristized under the test conditions as shown in Figure 1.

Output

Test point

VSSQ

50Ω

Figure 1 : Pullup slew rate test load

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

b. Pulldown slew rate is measured under the test conditions shown in Figure 2.

Output

Test point

VDDQ

50Ω

Figure 2 : Pulldown slew rate test load

c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV)

Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV)

Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output

switching.

Example : For typical slew rate, DQ0 is switching

For minmum slew rate, all DQ bits are switching from either high to low, or low to high.

The remaining DQ bits remain the same as for previous state.

d. Evaluation conditions

Typical : 25 °C (T Ambient), VDDQ = 2.5V, typical process

Minimum : 70 °C (T Ambient), VDDQ = 2.3V, slow - slow process

Maximum : 0 °C (T Ambient), VDDQ = 2.7V, fast - fast process

e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and

voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation.

f. Verified under typical conditions for qualification purposes.

g. TSOPII package divices only.

h. Only intended for operation up to 266 Mbps per pin.

i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5V/ns

as shown in Table 2. The Input slew rate is based on the lesser of the slew rates detemined by either VIH(AC) to VIL(AC) or

VIH(DC) to VIL(DC), similarly for rising transitions.

j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables 3 & 4.

Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the

slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.

The delta rise/fall rate is calculated as:

{1/(Slew Rate1)} - {1/(Slew Rate2)}

For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is - 0.5ns/V . Using the table given, this

would result in the need for an increase in tDS and tDH of 100 ps.

k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser

on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter

mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.

m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi

tions through the DC region must be monotony.

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

Figure 3. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)

Maximum

Typical High

Minumum

Vout(V)

Iout(mA)

-220

-200

-180

-160

-140

-120

-100

-80

-60

-40

-20

0.0 1.0 2.0

Minimum

Typical Low

Typical High

Maximum

100

120

140

160

0.0 0.5 1.0 1.5 2.0 2.5

Iout(mA)

Typical Low

Vout(V)

IBIS :I/V Characteristics for Input and Output Buffers

Pullup Characteristics for Full Strength Output Driver

Pulldown Characteristics for Full Strength Output Driver

DDR SDRAM Output Driver V-I Characteristics

DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1.

Figures 3 and 4 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable for input

into simulation tools. The driver characteristcs evaluation conditions are:

Output Driver Characteristic Curves Notes:

1. The full variation in driver current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines

the of the V-I curve of Figure 3 and 4.

2. It is recommended that the "typical" IBIS V-I curve lie within the inner bounding lines of the V-I curves of Figure 3 and 4.

3. The full variation in the ratio of the "typical" IBIS pullup to "typical" IBIS pulldown current should be unity +/- 10%, for device drain to

source voltages from 0.1 to1.0. This specification is a design objective only. It is not guaranteed.

Typical 25×C Vdd/Vddq = 2.5V, typical process

Minimum 70×C Vdd/Vddq = 2.3V, slow-slow process

Maximum 0×C Vdd/Vddq = 2.7V, fast-fast process

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

Table 8. Full Strength Driver Characteristics

Pulldown Current (mA) pullup Current (mA)

Voltage

(V)

Typical

Low

Typical

High Minimum Maximum

Typical

Low

Typical

High Minimum Maximum

0.1 6.0 6.8 4.6 9.6 -6.1 -7.6 -4.6 -10.0

0.2 12.2 13.5 9.2 18.2 -12.2 -14.5 -9.2 -20.0

0.3 18.1 20.1 13.8 26.0 -18.1 -21.2 -13.8 -29.8

0.4 24.1 26.6 18.4 33.9 -24.0 -27.7 -18.4 -38.8

0.5 29.8 33.0 23.0 41.8 -29.8 -34.1 -23.0 -46.8

0.6 34.6 39.1 27.7 49.4 -34.3 -40.5 -27.7 -54.4

0.7 39.4 44.2 32.2 56.8 -38.1 -46.9 -32.2 -61.8

0.8 43.7 49.8 36.8 63.2 -41.1 -53.1 -36.0 -69.5

0.9 47.5 55.2 39.6 69.9 -41.8 -59.4 -38.2 -77.3

1.0 51.3 60.3 42.6 76.3 -46.0 -65.5 -38.7 -85.2

1.1 54.1 65.2 44.8 82.5 -47.8 -71.6 -39.0 -93.0

1.2 56.2 69.9 46.2 88.3 -49.2 -77.6 -39.2 -100.6

1.3 57.9 74.2 47.1 93.8 -50.0 -83.6 -39.4 -108.1

1.4 59.3 78.4 47.4 99.1 -50.5 -89.7 -39.6 -115.5

1.5 60.1 82.3 47.7 103.8 -50.7 -95.5 -39.9 -123.0

1.6 60.5 85.9 48.0 108.4 -51.0 -101.3 -40.1 -130.4

1.7 61.0 89.1 48.4 112.1 -51.1 -107.1 -40.2 -136.7

1.8 61.5 92.2 48.9 115.9 -51.3 -112.4 -40.3 -144.2

1.9 62.0 95.3 49.1 119.6 -51.5 -118.7 -40.4 -150.5

2.0 62.5 97.2 49.4 123.3 -51.6 -124.0 -40.5 -156.9

2.1 62.9 99.1 49.6 126.5 -51.8 -129.3 -40.6 -163.2

2.2 63.3 100.9 49.8 129.5 -52.0 -134.6 -40.7 -169.6

2.3 63.8 101.9 49.9 132.4 -52.2 -139.9 -40.8 -176.0

2.4 64.1 102.8 50.0 135.0 -52.3 -145.2 -40.9 -181.3

2.5 64.6 103.8 50.2 137.3 -52.5 -150.5 -41.0 -187.6

2.6 64.8 104.6 50.4 139.2 -52.7 -155.3 -41.1 -192.9

2.7 65.0 105.4 50.5 140.8 -52.8 -160.1 -41.2 -198.2

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)

Maximum

Typical High

Minumum

Vout(V)

Iout(mA)

-90

-80

-70

-60

-50

-40

-30

-20

-10

0.0 1.0 2.0

Iout(mA)

Minimum

Typical Low

Typical High

Maximum

0.0 1.0 2.0

Iout(mA)

Typical Low

Vout(V)

Pullup Characteristics for Weak Output Driver

Pulldown Characteristics for Weak Output Driver

DDR SDRAMDDR SDRAM 128Mb F-die (x4, x8)

Rev. 1.1 May. 2004

Pulldown Current (mA) pullup Current (mA)

Voltage

(V)

Typical

Low

Typical

High Minimum Maximum

Typical

Low

Typical

High Minimum Maximum

0.1 3.4 3.8 2.6 5.0 -3.5 -4.3 -2.6 -5.0

0.2 6.9 7.6 5.2 9.9 -6.9 -8.2 -5.2 -9.9

0.3 10.3 11.4 7.8 14.6 -10.3 -12.0 -7.8 -14.6

0.4 13.6 15.1 10.4 19.2 -13.6 -15.7 -10.4 -19.2

0.5 16.9 18.7 13.0 23.6 -16.9 -19.3 -13.0 -23.6

0.6 19.6 22.1 15.7 28.0 -19.4 -22.9 -15.7 -28.0

0.7 22.3 25.0 18.2 32.2 -21.5 -26.5 -18.2 -32.2

0.8 24.7 28.2 20.8 35.8 -23.3 -30.1 -20.4 -35.8

0.9 26.9 31.3 22.4 39.5 -24.8 -33.6 -21.6 -39.5

1.0 29.0 34.1 24.1 43.2 -26.0 -37.1 -21.9 -43.2

1.1 30.6 36.9 25.4 46.7 -27.1 -40.3 -22.1 -46.7

1.2 31.8 39.5 26.2 50.0 -27.8 -43.1 -22.2 -50.0

1.3 32.8 42.0 26.6 53.1 -28.3 -45.8 -22.3 -53.1

1.4 33.5 44.4 26.8 56.1 -28.6 -48.4 -22.4 -56.1

1.5 34.0 46.6 27.0 58.7 -28.7 -50.7 -22.6 -58.7

1.6 34.3 48.6 27.2 61.4 -28.9 -52.9 -22.7 -61.4

1.7 34.5 50.5 27.4 63.5 -28.9 -55.0 -22.7 -63.5

1.8 34.8 52.2 27.7 65.6 -29.0 -56.8 -22.8 -65.6

1.9 35.1 53.9 27.8 67.7 -29.2 -58.7 -22.9 -67.7

2.0 35.4 55.0 28.0 69.8 -29.2 -60.0 -22.9 -69.8

2.1 35.6 56.1 28.1 71.6 -29.3 -61.2 -23.0 -71.6

2.2 35.8 57.1 28.2 73.3 -29.5 -62.4 -23.0 -73.3

2.3 36.1 57.7 28.3 74.9 -29.5 -63.1 -23.1 -74.9

2.4 36.3 58.2 28.3 76.4 -29.6 -63.8 -23.2 -76.4

2.5 36.5 58.7 28.4 77.7 -29.7 -64.4 -23.2 -77.7

2.6 36.7 59.2 28.5 78.8 -29.8 -65.1 -23.3 -78.8

2.7 36.8 59.6 28.6 79.7 -29.9 -65.8 -23.3 -79.7

Table 9. Weak Driver Characteristics