DESCRIPTION The MGFC38V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES @ Class A operation @ Internally matched to 502 system High output power Page = SW (TYP) @7.7~8.5 GHz @ High power gain Gip = 7 dB (TYP) @7.7~8.5GHz @ High power added efficiency Nada = 27% (TYP) @ 7.7~8.5GHz, Pras @ Hermetically sealed metal-ceramic package @ Low distortion [Item: -51] IM, = ~45 dBc (TYP} @ P, = 28 (dBm) S.C.L. APPLICATION ttem-01: 7.7~8.5GHz band power amplifier {tem-51: Digital radio communication QUALITY GRADE e iG ABSOLUTE MAXIMUM RATINGS (ta=2sc) MITSUBISHI SEMICONDUCTOR <GaAs FET> Symbol Parameter Ratings unit Vapo Gate to drain voltage 15 Vv Vaso Gate to source voltage ~5 v ip Drain current 7.5 A ler Reverse gate current ~20 mA ler Forward gate current 42 ~ mA Pr Total power diss:pation *1 42.8 Ww Toh | Channel temperature 175 C Tstg Storage temperature ~65~ +175 Cc at To = 26C ELECTRICAL CHARACTERISTICS (ta =zs'c) MGFC39V7785A | 7.7~8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET } i OUTLINE DRAWING 21,.0+0.3(0.827+0.012) Unit milimeters finches) 0.640.15 | (0.0246 + 0.006) 2Z2MiNv , oro | 12.9402 _ (0.808 + 0.008) 2MIN fae (0.079 MIN} wi co 10.7(0.4 2a; Pa (0.063) 18 0.2 ae! tT + i (6.008) 6+0.2 (0.102 + 0.008) 0.1 (0.004) pe 4540.4 (0.177 + 0.016) Be = 12.9 (0.072) D GATE @ SOURCE (FLANGE} (3 DRAIN G) T 0 RECOMMENDED BIAS CONDITIONS @ Vos=10V Ip=2.4A @ Rg=509 Refer to Bias Procedure Limits : Symbol Pararneter Test conditions Unit Min Typ Max \pss Saturated drain current Vos =3V, Vos =0V ~ _ 7.5 Im Transconductance Vos=3V, Ip=2.24 2 Ves(on) | Gate to source cut-off voltage Vos =3V, Ip = 20mA _ _~ -4.5 Output power at 1dB gain - Piga compression * 38 39 dBm Gup Linear power gain 6 7 _ d8 {pb Drain current Vos =10V, lp =2.4A, f=7.7-~-8.5GHz \ _ 3.0 A 4+ Nadd Power added efficiency _ 27 _ % IM3 3rd order iM distartion *1 42 ~a5 _ dBc Fith{ch-c) | Thermal resistance *2 AV: Method _ _ 3.5 c/w #1: item-51, 2-tone test Py = 28 dBm Single Carrier Level = 8.5GHz Af = 10 MHz * 2: Channel to case ae MESH MITSUBISHI SEMICONDUCTOR <GaAs FET> MIN ARY MGFC39V778SA anne ag ott qauc? ahs gna Pe anet! 7.7-~~8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (ta=25) Pras, Grp vs. f Po, Nadd YS. Pin ~ 45;>> & Vpg= 10V Vog= 10V rr) oS Gip=98|76 _ ~ fogs=2.4A log=2.4A g 2 ~ 4b | = 3 f=8.1GHz a a & 3 fa 2 2 QE wi a. 35 40 > Q 3 e Pol~ 2 a > x SL ie E z oa v 2 <t = 30 V4 \ 30 a . oO a ih 5 be / Yadd 3 ul 3 28 eo S a A J a oO o a. 2 a Ca 4 20}-+4 10 a z | = 6 4 15 a 7.77.87.98.08.18.28,.3 8.48.5 15 20 25 30 35 FREQUENCY (GHz) INPUT POWER Pin (dBm) Py, tM3 vs. Pin Vos= 10V = fog=2.4A 3 f= 8.5GHz w At=10MHz = 10 ao = 3 2 ~20 8 % - = -30 2 S a 5 ~40 we i a 3 ~50 7 20.22 2426.28 30 INPUT POWER Pin (dBm S.C.L.} S PARAMETERS (ta=25C, Vos=10V, Ips =2.4A) i S Parameters (TYP.) f he ; i Sit Siz S22 (GHz) + oy - * ' | Magn | Angle (deg. Magn. Angie deg.) Magn | Angie (deg } Magn. Angle ideg.} 1.7 0.45 i 24 | 2.40 -131 i 0.064 178 0.23 82 7.8 0.39 i iH 2.45 - 145 0.068 167 0.21 76 7.9 0.35 \ ~ 4 2.50 ~ 161 0.072 156 0.20 i 70 * \ | 8.0 0.33 \ - 8 | 2.52 | 176 9.074 146 0.20 56 8.1 0.27 | 40 | 2.51 162 i 0.077 131 0.19 46 8.2 0.24 ~113 2.48 145 9.071 114 0.17 21 8.3 0.26 ' ~ 161 2.42 | 121 i 0.063 31 0.15 12 | t 8.4 | 0.31 146 2.34 103 i 0.068 WW 0.15 ~ 94 ' \ 8.5 | 0.35 | 129 | 2.26 820.068 63 a.18 = 146