Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 60V
▼ Lower Gate Charge RDS(ON) 40mΩ
▼ Fast Switching Characteristic ID6.9A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient350 ℃/W
Data and specifications subject to change without notice
200812232
Thermal Data
Parameter
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.02
Storage Temperature Range
Continuous Drain Current35.5
Pulsed Drain Current130
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
RoHS-compliant Product
1
AP9475GM
Rating
60
+25
6.9
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
SSSG
DDDD
SO-8
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 60 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.073 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=6A - - 40 mΩ
VGS=4.5V, ID=4A - - 50 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=6A - 10 - S
IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=48V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+25V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=6A - 19 30 nC
Qgs Gate-Source Charge VDS=48V - 5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 10 - nC
td(on) Turn-on Delay Time2VDS=30V - 11 - ns
trRise Time ID=1A - 6 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 35 - ns
tfFall Time RD=30Ω-10-ns
Ciss Input Capacitance VGS=0V - 1670 2670 pF
Coss Output Capacitance VDS=25V - 160 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 116 - pF
RgGate Resistance f=1.0MHz - 1.58 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=2A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=6A, VGS=0V, - 34 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 50 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9475GM
AP9475GM
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
20
40
60
80
100
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC10V
6.0V
5.0V
4.5V
VG=3.0V
0
10
20
30
40
50
60
70
80
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
10V
6.0V
5.0V
4.5V
VG=3.0V
TA=150oC
32
34
36
38
40
42
44
46
357911
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=4A
TA=25
℃
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=6A
VG=10V
0.5
0.7
0.9
1.1
1.3
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP9475GM
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
100
1000
10000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
0 1020304050
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =30V
VDS =38V
VDS =48V
ID=6A
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
1ms
10ms
100ms
1s
DC
TA=25oC
Single Pulse
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
A1 0.10 0.18 0.25
B 0.33 0.41 0.51
c 0.19 0.22 0.25
D 4.80 4.90 5.00
E 5.80 6.15 6.50
E1 3.80 3.90 4.00
e
G
L 0.38 －0.90
α0.00 4.00 8.00
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
1.27 TYP
0.254 TYP
Package Outline : SO-8
ADVANCED POWER ELECTRONICS CORP.
e
B
134
5678
2
D
E1
A1
A
G
Part Number
9475G
M
YWWSSS
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
E
5
meet Rohs requirement
