AP9475GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower Gate Charge D D D Fast Switching Characteristic BVDSS 60V RDS(ON) 40m ID 6.9A G SO-8 S S S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 Rating Units 60 V +25 V 3 6.9 A 3 Continuous Drain Current ID@TA=70 Continuous Drain Current 5.5 A IDM Pulsed Drain Current1 30 A PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 50 /W 1 200812232 AP9475GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 60 - - V - 0.073 - V/ VGS=10V, ID=6A - - 40 m VGS=4.5V, ID=4A - - 50 m BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=0V, ID=1mA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=6A - 10 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=48V, VGS=0V - - 25 uA Gate-Source Leakage VGS=+25V, VDS=0V - - +100 nA ID=6A - 19 30 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 10 - nC VDS=30V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 6 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 35 - ns tf Fall Time RD=30 - 10 - ns Ciss Input Capacitance VGS=0V - 1670 2670 pF Coss Output Capacitance VDS=25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 116 - pF Rg Gate Resistance f=1.0MHz - 1.58 - Min. Typ. IS=2A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=6A, VGS=0V, - 34 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 50 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9475GM 80 100 o o 10V 6.0V T A =25 C T A = 150 C 70 10V 6.0V ID , Drain Current (A) ID , Drain Current (A) 80 5.0V 4.5V 60 40 60 5.0V 4.5V 50 40 30 20 V G =3.0V 20 10 V G =3.0V 0 0 0 1 2 3 4 5 0 6 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 46 ID=6A V G =10V ID=4A T A =25 1.4 Normalized RDS(ON) 44 42 RDS(ON) (m) 1 V DS , Drain-to-Source Voltage (V) 40 38 1.2 1.0 36 0.8 34 0.6 32 3 5 7 9 -50 11 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 6 5 Normalized VGS(th) (V) 1.3 IS(A) 4 3 T j =150 o C T j =25 o C 2 1.1 0.9 0.7 1 0 0.5 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9475GM f=1.0MHz 10000 14 V DS = 30 V V DS = 38 V V DS = 48 V 10 C (pF) VGS , Gate to Source Voltage (V) ID=6A 12 8 C iss 1000 6 4 2 C oss C rss 0 100 0 10 20 30 40 50 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthja) Duty factor=0.5 10 ID (A) 1ms 1 10ms 100ms 1s 0.1 T A =25 o C Single Pulse DC 0.2 0.1 0.1 0.05 0.02 PDM 0.01 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 125/W 0.001 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters 8 7 6 5 E1 1 2 3 4 e B E SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 c 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 e 1.27 TYP G 0.254 TYP L 0.38 0.90 0.00 4.00 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 9475GM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5