Vishay Siliconix
Si4442DY
Document Number: 71358
S09-0228-Rev. E, 09-Feb-09
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1
N-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFETs: 2.5 V Rated
• 100 % Rg Tested
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A)
30
0.0045 at VGS = 10 V 22
0.005 at VGS = 4.5 V 19
0.0075 at VGS = 2.5 V 17
SO
-8
5
6
7
8
T op V iew
2
3
4
1
Ordering Information: Si4442DY-T1-E3 (Lead (Pb)-free)
Si4442DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G D
S D
S D
S D
D
G
S
N-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ± 12
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID
22 15
A
TA = 70 °C 17 11
Pulsed Drain Current (10 µs Pulse Width) IDM 60
Continuous Source Current (Diode Conduction)aIS2.9 1.3
Maximum Power DissipationaTA = 25 °C PD
3.5 1.6 W
TA = 70 °C 2.2 1
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientat ≤ 10 s RthJA
29 35
°C/W
Steady State 67 80
Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16
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Document Number: 71358
S09-0228-Rev. E, 09-Feb-09
Vishay Siliconix
Si4442DY
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 30 V, VGS = 0 V 1µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C 5
On-State Drain CurrentaID(on) V
DS ≥ 5 V, VGS = 10 V 30 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 10 V, ID = 22 A 0.0035 0.0045
Ω
VGS = 4.5 V, ID = 19 A 0.0041 0.005
VGS = 2.5 V, ID = 17 A 0.0062 0.0075
Forward Transconductanceagfs VDS = 15 V, ID = 22 A 100 S
Diode Forward VoltageaVSD IS = 2.9 A, VGS = 0 V 0.75 1.1 V
Dynamicb
Total Gate Charge Qg
VDS = 15 V, VGS = 4.5 V, ID = 22 A
36 50
nCGate-Source Charge Qgs 8
Gate-Drain Charge Qgd 10.5
Gate Resistance Rg0.5 1.5 2.6 Ω
Tur n - O n D e l ay Time td(on)
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
17 30
ns
Rise Time tr11 20
Turn-Off Delay Time td(off) 125 180
Fall Time tf47 70
Source-Drain Reverse Recovery Time trr IF = 2.9 A, dI/dt = 100 A/µs 50 80
Output Characteristics
0
10
20
30
40
50
60
012345
VGS = 5 V thru 2.5 V
2 V
VDS
- Drain-to-Source Voltage (V)
- Drain Current (A)ID
1.5 V
Transfer Characteristics
0
10
20
30
40
50
60
0.0 0.5 1.0 1.5 2.0 2.5
25 °C
TC = 125 °C
- 55 °C
VGS
- Gate-to-Source Voltage (V)
- Drain Current (A)ID
Document Number: 71358
S09-0228-Rev. E, 09-Feb-09
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3
Vishay Siliconix
Si4442DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.000
0.002
0.004
0.006
0.008
0.010
0 102030405060
VGS = 4.5 V
VGS = 2.5 V
R - On -Restistance (Ω)
I - Drain Current (A)
D
DS(on)
0
2
4
6
8
10
0 20406080100
VDS = 15 V
ID = 22 A
- Gate-to-Source Voltage (V)
Qg
- Total Gate Charge (nC)
V
GS
1.0 1.2
1
10
60
0.00 0.2 0.4 0.6 0.8
TJ = 25 °C
TJ = 150 °C
VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
1000
2000
3000
4000
5000
6000
0 6 12 18 24 30
Crss
Coss
Ciss
VDS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
VGS = 4.5 V
ID = 22 A
TJ- Junction Temperature (°C)
RDS(on) - On-Resistance
(Normalized)
0.000
0.004
0.008
0.012
0.016
0.020
0246810
ID = 22 A
- On-Resistance (Ω)RDS(on)
VGS
- Gate-to-Source Voltage (V)
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Document Number: 71358
S09-0228-Rev. E, 09-Feb-09
Vishay Siliconix
Si4442DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71358.
Threshold Voltage
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
Variance (V)VGS(th)
TJ - Temperature (°C)
Single Pulse Power
0
30
60
10
20
Power (W)
Time (s)
40
50
1 100 6001010-1
10-2
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-310-21 10 60010-1
10-4100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 67 °C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Normalized Thermal Transient Impedance, Junction-to-Foot
10-310-211010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
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Revision: 08-Feb-17 1Document Number: 91000
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